KR101459517B1 - 기판 접합 방법 및 반도체 장치 - Google Patents

기판 접합 방법 및 반도체 장치 Download PDF

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Publication number
KR101459517B1
KR101459517B1 KR1020080049550A KR20080049550A KR101459517B1 KR 101459517 B1 KR101459517 B1 KR 101459517B1 KR 1020080049550 A KR1020080049550 A KR 1020080049550A KR 20080049550 A KR20080049550 A KR 20080049550A KR 101459517 B1 KR101459517 B1 KR 101459517B1
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South Korea
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layer
substrate
composition ratio
region
solder
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KR20080112106A (ko
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토시히로 세코
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스탠리 일렉트릭 컴퍼니, 리미티드
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)
KR1020080049550A 2007-06-20 2008-05-28 기판 접합 방법 및 반도체 장치 Expired - Fee Related KR101459517B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007162508A JP5426081B2 (ja) 2007-06-20 2007-06-20 基板接合方法及び半導体装置
JPJP-P-2007-00162508 2007-06-20

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KR20080112106A KR20080112106A (ko) 2008-12-24
KR101459517B1 true KR101459517B1 (ko) 2014-11-07

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US (2) US8158459B2 (enExample)
JP (1) JP5426081B2 (enExample)
KR (1) KR101459517B1 (enExample)
TW (1) TWI440068B (enExample)

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JP5519355B2 (ja) 2010-03-19 2014-06-11 スタンレー電気株式会社 半導体発光素子及びその製造方法
US8569889B1 (en) * 2011-02-09 2013-10-29 Nlight Photonics Corporation Nano thick Pt metallization layer
JP6067982B2 (ja) 2012-03-19 2017-01-25 スタンレー電気株式会社 半導体素子の製造方法
JP6005957B2 (ja) * 2012-03-19 2016-10-12 スタンレー電気株式会社 半導体素子及びその製造方法
WO2014037829A1 (en) 2012-09-05 2014-03-13 Koninklijke Philips N.V. Laser de-bond of carrier wafer from device wafer
US9676047B2 (en) 2013-03-15 2017-06-13 Samsung Electronics Co., Ltd. Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same
US10688578B2 (en) 2014-08-04 2020-06-23 OK International, Inc Variable temperature controlled soldering iron
US10716220B2 (en) 2014-08-04 2020-07-14 Ok International, Inc. Variable temperature controlled soldering iron
US9516762B2 (en) 2014-08-04 2016-12-06 Ok International Inc. Soldering iron with automatic soldering connection validation
US9327361B2 (en) 2014-08-04 2016-05-03 Ok International Inc. Intelligent soldering cartridge for automatic soldering connection validation
DE112016006934B4 (de) * 2016-07-04 2020-01-23 Mitsubishi Electric Corporation Halbleitereinheit und Verfahren zur Herstellung derselben

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JP2003200289A (ja) * 2001-09-27 2003-07-15 Furukawa Electric Co Ltd:The 部材の接合方法、その方法で得られた接合部材
JP2006269751A (ja) * 2005-03-24 2006-10-05 Toshiba Corp 半導体装置の製造方法及び半導体装置
JP2006332435A (ja) 2005-05-27 2006-12-07 Sharp Corp サブマウント、半導体レーザ装置およびその製造方法、ホログラムレーザ装置、並びに光ピックアップ装置
KR20100023772A (ko) * 2008-08-22 2010-03-04 스탄레 덴끼 가부시키가이샤 반도체 발광 장치의 제조 방법 및 반도체 발광 장치

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