TWI633636B - 電子裝置及其製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 64
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 26
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- 239000002131 composite material Substances 0.000 claims description 34
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- 239000004065 semiconductor Substances 0.000 abstract description 24
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
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- 238000000034 method Methods 0.000 description 5
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- 229910052719 titanium Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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Abstract
本發明在製造藉均熱片以連接半導體晶片與可進行半導體晶片之散熱之散熱片的電子裝置時,係使用第1碳奈米管而於半導體晶片背面形成第1均熱片,使用第2碳奈米管而於散熱片上形成第2均熱片,並貼合第1均熱片與第2均熱片;其中該半導體晶片於基板表面形成有元件層。依據上述構造,可實現以較簡化之構造達成熱阻極低而效率良好之散熱之可靠度較高的電子裝置。
Description
本發明有關於一種電子裝置及其製造方法。
近年,電子裝置,諸如半導體裝置之散熱技術已存在於半導體元件與散熱片之間配置上下面已附有高導熱性黏著材料之TIM1、TIM2之均熱片之技術等。且,亦已開發於半導體元件與散熱片之間形成碳奈米管(CNT)之散熱技術(參照諸如專利文獻1~3)。
專利文獻1:日本專利特開2010-192656號公報
專利文獻2:日本專利特開2010-192661號公報
專利文獻3:日本專利特開2010-267706號公報
然而,使用上述CNT之散熱技術均於半導體元件與散熱片之接合部位發生熱阻之增大,而存在無法充分散
熱之問題。
本發明乃有鑑於上述問題而設計,目的在提供一種可藉較簡化之構造而實現熱阻極低而效率良好之散熱之可靠度較高之電子裝置及其製造方法。
本發明之電子裝置包含有:電子零件,於基板表面形成有元件層;散熱片,可進行前述電子零件之散熱;及,均熱片,係設於前述電子零件背面與前述散熱片之間;前述均熱片包含:第1均熱片,係形成於前述電子零件背面,並設有第1碳奈米管;及,第2均熱片,係形成於前述散熱片,並設有第2碳奈米管。
本發明之電子裝置之製造方法乃藉均熱片連接電子零件與可進行前述電子零件之散熱的散熱片,其中電子零件於基板表面形成有元件層;該製造方法之特徵在於包含以下步驟:使用第1碳奈米管而於前述電子零件背面形成第1均熱片之步驟;使用第2碳奈米管而於前述散熱片上形成第2均熱片之步驟;及,貼合前述第1均熱片與前述第2均熱片之步驟。
依據本發明,可實現以較簡化之構造而達成熱阻極低且效率良好之散熱之可靠度較高之電子裝置。
1‧‧‧矽基板
1a‧‧‧切割線
2‧‧‧第1均熱片
3‧‧‧基台
4‧‧‧第2均熱片
5‧‧‧散熱翼片
6‧‧‧焊球
10‧‧‧半導體晶片
11‧‧‧元件層
12‧‧‧基材
13‧‧‧觸媒材料
14‧‧‧CNT
15‧‧‧金屬材料
20‧‧‧散熱片
21‧‧‧基材
22‧‧‧觸媒材料
23‧‧‧CNT
24‧‧‧金屬材料
30‧‧‧支持基板
40‧‧‧安裝基板
圖1A為依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖1B為接續圖1A,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖1C為接續圖1B,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖2A為接續圖1C,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖2B為接續圖2A,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖2C為接續圖2B,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖3A為接續圖2C,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖3B為接續圖3A,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖4A為接續圖3B,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖4B為接續圖4A,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖4C為接續圖4B,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖4D為接續圖4C,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖5A為接續圖4D,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
圖5B為接續圖5A,而依步驟順序顯示本實施形態之電子裝置之製造方法之概略截面圖。
以下,參照圖示詳細說明應用本發明之具體實施形態。
本實施形態中,將一同揭露包含MOS構造之電晶體元件作為功能元件之半導體裝置作為電子裝置及其製造方法。另,除本實施形態之MOS電晶體以外,亦可應用包含各種記憶體元件、電容器元件等作為功能元件之裝置作為半導體裝置。
圖1A~圖5B為依步驟順序顯示本實施形態之半導體裝置之製造方法之概略截面圖。
首先,形成各半導體晶片。
如圖1A所示,準備表面上已形成有元件層11之半導體基板諸如矽基板1。
元件層11乃諸如於絕緣膜內形成MOS構造之電晶體元件作為功能元件及其配線構造等而構成。
接著,如圖1B所示,將矽基板1之表面側(元件層11側)載置固定於支持基板30上。
其次,如圖1C所示,藉背面研磨而研削矽基板1之背面,並將矽基板1削薄至預定厚度。
然後,如圖2A所示,使CNT14成長於矽基板1背面上。
詳而言之,乃先藉濺鍍法等使諸如Ti、TiN、Ta、TaN等鍍層至數nm左右~20nm左右之厚度。藉此,而可於矽基板1背面上形成位障金屬之基材12。
接著,藉真空蒸鍍法等,使觸媒材料鍍層至諸如數nm左右之厚度。觸媒材料則使用由Co、Ni、Fe、Ti、V等中選出之1種或2種以上之混合材料。舉例言之,可選擇Co/Ti或Co/V。藉此,即可於矽基板1背面之基材12上形成觸媒材料13。
其次,藉諸如熱CVD法將成長溫度設在400℃~450℃之低溫範圍內之值,在此乃設為450℃左右,並執行碳奈米管(CNT)之成長處理。藉此,而可使CNT14自存在矽基板1之背面上之觸媒材料13豎立而形成。CNT14可形成諸如數μm左右~數百μm左右之長度。CNT乃導熱率高於基板材料之矽而散熱性良好之材料。
然後,如圖2B所示,形成嵌入CNT14之金屬材料15。
詳而言之,乃於矽基板1之背面上形成諸如Cu作為導熱性較高之金屬材料15,藉電鍍法等而嵌入CNT13。藉此,即可於矽基板1背面上形成CNT14與嵌入CNT14之金屬材料15之複合材料。金屬材料15可使用諸如Ag、Au等取代Cu。且,亦可使用金屬奈米粒子分散液等取代鍍覆。
接著,如圖2C所示,去除複合材料之多餘之金屬材料15。
詳而言之,可藉諸如化學機械研磨(CMP)法而研磨去除
複合材料之金屬材料15至複合材料內之CNT14先端露出為止。藉此,而可形成由複合材料所構成,自平坦表面露出CNT14先端之第1均熱片2。
其次,如圖3A所示,就矽基板1進行切割處理,而就各半導體晶片沿切割線1a加以切割。
然後,如圖3B所示,自支持基板30分離各半導體晶片10。
半導體晶片10乃於矽基板1之表面上形成元件層11而成。半導體晶片10背面上則形成有第1均熱片2。
接著,形成散熱片。
如圖4A所示,準備散熱片之基台3。基台3則由諸如Cu或Al等導熱性較高之金屬材料所構成。
然後,如圖4B所示,使CNT23成長於基台3背面上。
詳而言之,乃先藉濺鍍法等使諸如Ti、TiN、Ta、TaN等鍍層至數nm左右~20nm左右之厚度。藉此,而於基台3背面上形成位障金屬之基材21。
其次,藉真空蒸鍍法等將觸媒材料鍍層至諸如數nm左右之厚度。觸媒材料可使用Co、Ni、Fe、Ti、V等中選出之1種或2種以上之混合材料。舉例言之,可選擇Co/Ti或Co/V。藉此,而可於基台3背面之基材21上形成觸媒材料22。
接著,藉諸如熱CVD法將成長溫度設在400℃~450℃之低溫範圍內之值,在此乃設為450℃左右,並執行碳奈米管(CNT)之成長處理。藉此,而可使CNT23自存在基
台3之背面上之觸媒材料22豎立而形成。CNT23可形成諸如數μm左右~數百μm左右之長度。CNT乃導熱率高於基底材料之Cu等而散熱性良好之材料。
然後,如圖4C所示,形成嵌入CNT23之金屬材料24。
詳而言之,乃於基台3背面上形成諸如Cu作為導熱性較高之金屬材料24,藉電鍍法等而嵌入CNT23。藉此,即可於基台3背面上形成CNT23與嵌入CNT23之金屬材料24之複合材料。金屬材料24可使用諸如Ag、Au等取代Cu。且,亦可使用金屬奈米粒子分散液等取代鍍覆。
接著,如圖4D所示,去除複合材料之多餘之金屬材料24。
詳而言之,乃藉諸如CMP法,而研磨去除複合材料之金屬材料24至複合材料內之CNT23先端露出為止。藉此,而可形成由複合材料所構成,自平坦表面露出CNT23先端之第2均熱片4。
然後,如圖5A所示,於基台3表面上形成散熱翼片5。散熱翼片5宜由與基台3相同之導熱性較高之金屬所形成。依據上述,即可形成於基台3表面上設有散熱翼片5而成之散熱片20。散熱片20背面上則形成有第2均熱片4。
其次,如圖5B所示,使半導體晶片10之第1均熱片2表面與散熱片20之第2均熱片4表面對向,並使兩者直接接觸。第1及第2均熱片2、4之各表面已藉CMP法而業經平坦處理,已形成平坦性良好之狀態,兩者則在真空環境中
在預定壓力下接觸而黏著固定。此時,亦可於接合面上形成銦層,並在加壓之同時進行加熱接合。
半導體晶片10之元件層11於表面之端子上配設有諸如焊球6,並使其等與預定之安裝基板40電性連接。依據上述,即可形成本實施形態之半導體裝置。
本實施形態之半導體裝置中,使第1及第2均熱片2、4之表面對向並黏著固定,而構成均熱片。此時,第1及第2均熱片2、4所構成之均熱片本身、均熱片與半導體晶片10之間、均熱片與散熱片20之間,不存在熱阻較大之居間物。如上所述,依據本實施形態,可製得可以較簡化之構造實現熱阻極低而效率良好之散熱之可靠度較高之半導體裝置。
依據本發明,可實現可以較簡化之構造達成熱阻極低而效率良好之散熱之可靠度較高之電子裝置。
Claims (4)
- 一種電子裝置,其特徵在於包含有:電子零件,於基板表面形成有元件層;散熱片,可進行前述電子零件之散熱;及均熱片,係設於前述電子零件背面與前述散熱片之間;前述均熱片包含:第1均熱片,係直接形成於前述電子零件背面,且係由第1碳奈米管、與嵌入前述第1碳奈米管的第1金屬之第1複合材料所構成;及第2均熱片,係直接形成於前述散熱片,且係由第2碳奈米管、與嵌入前述第2碳奈米管的第2金屬之第2複合材料所構成;其中,前述第1複合材料其露出前述第1碳奈米管的第1經平坦化表面與前述第2複合材料其露出前述第2碳奈米管的第2經平坦化表面,係在呈對向的狀態下直接貼合;並且前述第1複合材料的第1經平坦化表面,是使前述第1碳奈米管所露出的先端與前述第1金屬的表面齊平之方式來被平坦化;前述第2複合材料的第2經平坦化表面,是使前述第2碳奈米管所露出的先端與前述第2金屬的表面齊平之方式來被平坦化。
- 一種電子裝置,其特徵在於包含有:電子零件,於基板表面形成有元件層;散熱片,可進行前述電子零件之散熱;及均熱片,係設於前述電子零件背面與前述散熱片之間;前述均熱片包含:第1均熱片,係直接形成於前述電子零件背面,且係由第1碳奈米管、與嵌入前述第1碳奈米管的第1金屬之第1複合材料所構成;及第2均熱片,係直接形成於前述散熱片,且係由第2碳奈米管、與嵌入前述第2碳奈米管的第2金屬之第2複合材料所構成,其中,前述第1複合材料其露出前述第1碳奈米管的第1經平坦化表面與前述第2複合材料其露出前述第2碳奈米管的第2經平坦化表面,係藉第3金屬而在呈對向的狀態下直接貼合;並且前述第1複合材料的第1經平坦化表面,是使前述第1碳奈米管所露出的先端與前述第1金屬的表面齊平之方式來被平坦化;前述第2複合材料的第2經平坦化表面,是使前述第2碳奈米管所露出的先端與前述第2金屬的表面齊平之方式來被平坦化。
- 一種電子裝置之製造方法,該電子裝置係藉均熱片連接電子零件與散熱片,其中該電子零件於基板表面形成有元件層而該散熱片可進行前述電子零件之散熱;該製造方法之特徵在於包含以下步驟:於前述電子零件背面,使用第1碳奈米管、與嵌入前述第1碳奈米管的第1金屬之第1複合材料來直接形成第1均熱片之步驟;於前述散熱片,使用第2碳奈米管、與嵌入前述第2碳奈米管的第2金屬之第2複合材料來直接形成第2均熱片之步驟;及將前述第1複合材料其露出前述第1碳奈米管的第1經平坦化表面與前述第2複合材料其露出前述第2碳奈米管的第2經平坦化表面,係在呈對向的狀態下直接接觸而貼合之步驟;並且前述第1複合材料的第1經平坦化表面,是使前述第1碳奈米管所露出的先端與前述第1金屬的表面齊平之方式來被平坦化;前述第2複合材料的第2經平坦化表面,是使前述第2碳奈米管所露出的先端與前述第2金屬的表面齊平之方式來被平坦化。
- 一種電子裝置之製造方法,該電子裝置係藉均熱片連接電子零件與散熱片,其中該電子零件於基板表面形成有元件層而該散熱片可進行前述電子零件之散熱;該製造方法之特徵在於包含以下步驟:於前述電子零件背面,使用第1碳奈米管、與嵌入前述第1碳奈米管的第1金屬之第1複合材料來直接形成第1均熱片之步驟;於前述散熱片,使用第2碳奈米管、與嵌入前述第2碳奈米管的第2金屬之第2複合材料來直接形成第2均熱片之步驟;及將前述第1複合材料其露出前述第1碳奈米管的第1經平坦化表面與前述第2複合材料其露出前述第2碳奈米管的第2經平坦化表面,藉第3金屬而在呈對向的狀態下貼合之步驟;並且前述第1複合材料的第1經平坦化表面,是使前述第1碳奈米管所露出的先端與前述第1金屬的表面齊平之方式來被平坦化;前述第2複合材料的第2經平坦化表面,是使前述第2碳奈米管所露出的先端與前述第2金屬的表面齊平之方式來被平坦化。
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