TW201640627A - 電子裝置及其製法 - Google Patents

電子裝置及其製法 Download PDF

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Publication number
TW201640627A
TW201640627A TW104123519A TW104123519A TW201640627A TW 201640627 A TW201640627 A TW 201640627A TW 104123519 A TW104123519 A TW 104123519A TW 104123519 A TW104123519 A TW 104123519A TW 201640627 A TW201640627 A TW 201640627A
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Taiwan
Prior art keywords
electronic device
heat
silver
metal layer
manufacturing
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TW104123519A
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English (en)
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TWI563615B (en
Inventor
洪崇仁
潘吉安
徐啓翔
洪良易
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矽品精密工業股份有限公司
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Priority to TW104123519A priority Critical patent/TWI563615B/zh
Priority to CN201510464349.5A priority patent/CN106129025B/zh
Priority to US14/998,048 priority patent/US9607923B2/en
Publication of TW201640627A publication Critical patent/TW201640627A/zh
Application granted granted Critical
Publication of TWI563615B publication Critical patent/TWI563615B/zh

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Abstract

一種電子裝置，係包括：電子元件、以及利用導熱體設於該電子元件上之散熱件，且該導熱體係包含銀材，其中，該導熱體之寬度小於該電子元件之寬度，使該導熱體之熱導率大幅增加，因而有效提升電子裝置之熱傳導之效率。

Description

電子裝置及其製法
本發明係有關一種電子裝置，尤指一種具有散熱件之電子裝置及其製法。
隨著電子產品在功能及處理速度之需求的提升，作為電子產品之核心組件的半導體晶片需具有更高密度之電子元件(Electronic Components)及電子電路(Electronic Circuits)，故半導體晶片在運作時將隨之產生更大量的熱能，且包覆該半導體晶片之封裝膠體係為一種導熱係數僅0.8Wm-1k-1之不良傳熱材質(即熱量之逸散效率不佳)，因而若不能有效逸散所產生之熱量，則會造成半導體晶片之損害或造成產品信賴性問題。
因此，為了迅速將熱能散逸至大氣中，通常在半導體封裝件中配置散熱片(Heat Sink或Heat Spreader)，且傳統散熱片係藉由散熱膠結合至晶片背面，以藉散熱膠與散熱片逸散出半導體晶片所產生之熱量。
然而，散熱膠已不符合製程需求，故遂發展出導熱介面材(Thermal Interface Material，簡稱TIM)製程。
習知TIM製程係以銲錫材料作為熱傳導材料，其設於半導體晶片背面與散熱片之間，而為了提升TIM層與晶片背面之間的接著強度，需於晶片背面上覆金(即所謂之Coating Gold On Chip Back)，且需使用助焊劑(flux)，以利於該TIM層接著於該金層上。
然而，覆金(coating gold)製程容易造成污染，且進行覆金製程及使用助焊劑均會增加製程步驟及成本，故對晶圓廠或封裝廠而言都不符合經濟效益。
再者，於回銲該銲錫材料時，該助焊劑遇熱會揮發，致使於該TIM層中產生空洞(void)區域，且該空洞區域約佔該TIM層之體積40%，導致熱傳導面積減少而使產品之良率降低。
因此，遂發展出另一種TIM製程，係以氧化鋁(Al2O3)作為熱傳導材料。
如第1及1’圖所示，習知半導體封裝結構1之製法係先將一半導體晶片11以其作用面11a利用覆晶接合方式(即透過導電凸塊110與底膠111)設於一封裝基板10上，再將一銅材散熱件13以其頂片130藉由TIM層12(其包含氧化鋁材120與聚合物顆粒121)結合於該半導體晶片11之非作用面11b上，且該散熱件13之支撐腳131藉由黏著層14架設於該封裝基板10上。
於運作時，該半導體晶片11所產生之熱能係經由該非作用面11b、TIM層12而傳導至該散熱件13以散熱至該半導體封裝結構1之外部。
惟，習知封裝結構1中，該TIM層12係以氧化鋁材120作為熱傳導材料，其熱導率(Thermal conductivity)極小，約為3.9W/mK，對於熱導率係數極大之散熱件13(銅之熱導率係數約400W/mK)而言，明顯無法有效傳遞熱量。
再者，該半導體晶片11與TIM層12之間的熱膨脹係數(coefficient of thermal expansion，簡稱CTE)相近，但該散熱件13與TIM層12之間的熱膨脹係數差異(CTE Mismatch)極大，導致變形量(即翹曲程度)極大，故該散熱件13之頂片130與TIM層12之間容易發生脫層，不僅造成導熱效果下降，且會造成半導體封裝結構1外觀上的不良，因而嚴重影響產品之信賴性。
因此，如何克服上述習知技術之問題，實已成為目前業界亟待克服之難題。
鑑於上述習知技術之種種缺失，本發明提供一種電子裝置，係包括：電子元件；導熱體，係設於該電子元件上，且該導熱體包含銀材，其中，該導熱體之寬度小於該電子元件之寬度；以及散熱件，係設於該導熱體上。
本發明復提供一種電子裝置之製法，係包括：提供一電子元件；以及藉由導熱體結合一散熱件於該電子元件上，且該導熱體包含銀材，其中，該導熱體之寬度小於該電子元件之寬度。
前述之電子裝置及其製法中，該電子元件係為主動元件、被動元件、封裝元件或其三者之組合。
前述之電子裝置及其製法中，該導熱體包含複數聚合物顆粒，且該聚合物顆粒之直徑係小於或等於20微米。
前述之電子裝置及其製法中，該導熱體包含有結合至該電子元件上之第一金屬層、結合至該散熱件上之第二金屬層、及位於該第一與第二金屬層之間的燒結銀層。例如，形成該第一金屬層之材質係為鈦、鈦/銅或鈦/鎳、鈦/銀、鈦/銅/銀或鈦/鎳/銀，且形成該第二金屬層之材質係為銀或鎳/銀，而該第一與第二金屬層係以濺鍍方式形成者。另外，該第一與第二金屬層之銀厚度係大於或等於200奈米。
前述之電子裝置及其製法中，該電子元件具有相對之作用面與非作用面，且該導熱體係設於部分該非作用面上。例如，該導熱體與該非作用面之接觸面積係小於該非作用面之面積的80%。
前述之電子裝置及其製法中，該散熱件具有相對之第一表面與第二表面，且該導熱體係設於部分該第一表面或全部該第一表面上。例如，該導熱體係設於部分該第一表面上，且該導熱體與該第一表面之接觸面積係小於該第一表面對應該非作用面之投影面積的80%。
前述之電子裝置及其製法中，復包括形成絕緣材於該散熱件上，以包覆該導熱體、或該導熱體與該電子元件。
由上可知，本發明之電子裝置及其製法，主要藉由該導熱體包含銀材，使其熱導率大幅增加，因而有效提升熱傳導之效率。
再者，藉由該導熱體之寬度小於該電子元件之寬度， 以避免該導熱體與該電子元件間發生剝離之問題。
1‧‧‧封裝結構
10,20‧‧‧封裝基板
11‧‧‧半導體晶片
11a,21a‧‧‧作用面
11b,21b‧‧‧非作用面
110,210‧‧‧導電凸塊
111,211‧‧‧底膠
12‧‧‧TIM層
120‧‧‧氧化鋁材
121‧‧‧聚合物顆粒
13,23‧‧‧散熱件
130,230‧‧‧頂片
131,231‧‧‧支撐腳
14,24‧‧‧黏著層
2,3,3’‧‧‧電子裝置
21‧‧‧電子元件
21c‧‧‧側面
22‧‧‧導熱體
22a‧‧‧第一金屬層
22b,22b’‧‧‧第二金屬層
22c‧‧‧燒結銀層
220‧‧‧燒結銀
221‧‧‧聚合物顆粒
23a‧‧‧第一表面
23b‧‧‧第二表面
25‧‧‧絕緣材
A,C‧‧‧接觸面積
B‧‧‧面積
D‧‧‧投影面積
W,T‧‧‧寬度
第1圖係為習知半導體電子裝置之剖面示意圖；第1’圖係為第1圖之局部放大之示意圖；第2圖係為本發明之電子裝置之局部剖面示意圖；第2’圖係為本發明之電子裝置之剖面示意圖；以及第3A、3A’及3B圖係為本發明之電子裝置之另一實施例之剖面示意圖。
以下藉由特定的具體實施例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知，本說明書所附圖式所繪示之結構、比例、大小等，均僅用以配合說明書所揭示之內容，以供熟悉此技藝之人士之瞭解與閱讀，並非用以限定本發明可實施之限定條件，故不具技術上之實質意義，任何結構之修飾、比例關係之改變或大小之調整，在不影響本發明所能產生之功效及所能達成之目的下，均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時，本說明書中所引用之如“上”、“下、“第一”、“第二”及“一”等之用語，亦僅為便於敘述之明瞭，而非用以限定本發明可實施之範圍，其相對關係之改變或調整，在無實質變更技術內容下，當亦視為本發明可實施之範疇。
第2及2’圖係為本發明之電子裝置2之製法，其先提 供一電子元件21，再藉由導熱體22將一散熱件23結合至該電子元件21上，且該導熱體22包含銀材，其中，該導熱體22之寬度W小於該電子元件21之寬度T。
於本實施例中，該散熱件23係為散熱片(如銅片)，其具有相對之第一表面23a與第二表面23b，且該電子元件21係為主動元件、被動元件、封裝元件或其三者之組合。具體地，該主動元件係例如半導體晶片，該被動元件係例如電阻、電容及電感，且該封裝元件係包含基板、設於該基板上之晶片及包覆該晶片之封裝層。於此係以該電子元件21為半導體晶片作為示例，其具有相對之作用面21a與非作用面21b。
再者，該散熱件23之構造可如第1圖所示，但並不限於此，即該散熱件23之構造可依需求選擇各種態樣。
又，該導熱體22係為多層導熱層之結構，其由直接接觸該電子元件21之第一金屬層22a、直接接觸該散熱件23之第二金屬層22b、及直接接觸於該第一與第二金屬層22a,22b之間的燒結(sintering)銀層22c所構成。
具體地，該第一與第二金屬層22a,22b之結構可為多層結構或合金結構。例如，形成該第一金屬層22a之材質係為鈦、鈦/銅或鈦/鎳、鈦/銀、鈦/銅/銀或鈦/鎳/銀等多層結構；形成該第二金屬層22b之材質係為鈦、銀、銅、鎳或其合金之任一組合者，較佳地，形成該第二金屬層22b之材質係為銀層或如鎳/銀之多層結構。較佳者，該第一與第二金屬層22a,22b係以濺鍍(sputter)方式形成者，如濺 鍍銀層。
另外，該燒結銀層22c包含燒結銀220與具有複數聚合物(polymer)顆粒221之膠材，且該聚合物顆粒221之直徑係小於或等於20微米(較佳為小於)。
因此，於製作該電子裝置2時，例如，可先將該第一金屬層22a濺鍍於該電子元件21之全部該非作用面21b上，且將該第二金屬層22b濺鍍於該散熱件23之第一表面23a上，之後再利用該燒結銀層22c結合該第一與第二金屬層22a,22b，使該散熱件23結合於該電子元件21上。
實際地，於結合時，該第一與第二金屬層22a,22b之濺鍍銀與該燒結銀220會相融合以形成金屬接合，此時會消耗部分濺鍍銀，故該第一金屬層22a之銀厚度需大於或等於200奈米(較佳為大於，如300奈米)，且該第二金屬層22b之銀厚度需大於或等於200奈米(較佳為大於，如300奈米)，以維持該導熱體22之結構強度。
另一方面，該燒結銀層22c係為一種銀膠態樣，其藉由金屬奈米顆粒結構以降低金屬材的反應溫度，且藉由混和該聚合物顆粒221，以降低材料的楊氏模數(Young’s modulus)。較佳地，該聚合物顆粒221之直徑小於20微米，且於結合前，該燒結銀層22c需預熱處理，使該燒結銀220之顆粒與聚合物顆粒221的分佈均勻，令該導熱體22的應力均勻分佈，以避免產生脫層。
本發明之製法藉由該導熱體22之寬度W小於該電子元件21之寬度T，使該電子元件21之部分非作用面21b 未覆蓋有該導熱體22，以分散該導熱體22與該電子元件21間的熱應力，故能避免該導熱體22與該電子元件21間因熱膨脹係數(Coefficient of thermal expansion，簡稱CTE)之差異而發生剝離(peeling)的問題。
第3A及3B圖係為本發明之電子裝置3,3’之另一實施例。本實施例與上述實施例的差異在於導熱體22之分布。
如第3A圖所示，先將一電子元件21以其作用面21a利用覆晶接合方式(即透過導電凸塊210與底膠211)設於一封裝基板20上，再將該散熱件23以其頂片230藉由該導熱體22結合於該電子元件21之非作用面21b上，且該散熱件23之支撐腳231藉由黏著層24架設於該封裝基板20上。
於本實施例中，該導熱體22之第一金屬層22a係設於部分該非作用面21b，且該導熱體22(即該第一金屬層22a)與該非作用面21b之接觸面積A係小於該非作用面21b之面積B的80%(即A<0.8B)。
再者，該散熱件23具有相對之第一表面23a與第二表面23b，且該導熱體22之第二金屬層22b係設於部分該第一表面23a上，而該導熱體22(即該第二金屬層22b)與該第一表面23a之接觸面積C係小於該第一表面23a對應該非作用面21b之投影面積D的80%(即C<0.8D)。
又，該電子裝置3復包括形成絕緣材25於該散熱件23之頂片230之第一表面23a上，以包覆該導熱體22與該電子元件21之側面21c與部分非作用面21b，藉以強化該 散熱件23與該電子元件21間的結合。或者，如第3A’圖所示，該絕緣材25僅包覆該導熱體22，仍可強化該散熱件23與該電子元件21間的結合。
另外，如第3B圖所示，該導熱體22之第二金屬層22b’亦可設於全部該第一表面23a上(即該頂片230之全部下表面與該支撐腳231之全部下表面)。
本實施例係藉由將該第一金屬層22a沉積於部分該非作用面21b上，同時藉由在該導熱體22及電子元件21之側面21c形成該絕緣材25，以避免該第一金屬層22a自該非作用面21b剝離，且可提高該散熱件23與該絕緣材25的接合強度。
綜上所述，本發明之電子裝置2及其製法，係藉由該導熱體22包含銀材(特別是燒結銀220)，使其熱導率大幅增加(約為40W/mK)，因而有效提升該電子裝置2之熱傳導效率。
再者，由於該第一與第二金屬層22a,22b係以濺鍍方式形成者，使該第一與第二金屬層22a,22b分別強力附著於該電子元件21與該散熱件23上，且該第一與第二金屬層22a,22b之濺鍍銀與該燒結銀220會緊密融合，故能有效避免該導熱體22與該散熱件23之間發生脫層，因而不僅能提升導熱效果，且能提升產品之信賴性。
又，藉由該導熱體22之寬度W小於該電子元件21之寬度T，以避免該導熱體22與該電子元件21間發生剝離。
上述實施例係用以例示性說明本發明之原理及其功 效，而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修改。因此本發明之權利保護範圍，應如後述之申請專利範圍所列。
2‧‧‧電子裝置
21‧‧‧電子元件
22‧‧‧導熱體
22a‧‧‧第一金屬層
22b‧‧‧第二金屬層
22c‧‧‧燒結銀層
220‧‧‧燒結銀
221‧‧‧聚合物顆粒
23‧‧‧散熱件

Claims (30)

  1. 一種電子裝置，係包括：電子元件；導熱體，係設於該電子元件上，且該導熱體包含銀材，其中，該導熱體之寬度小於該電子元件之寬度；以及散熱件，係設於該導熱體上。
  2. 如申請專利範圍第1項所述之電子裝置，其中，該電子元件係為主動元件、被動元件、封裝元件或其三者之組合。
  3. 如申請專利範圍第1項所述之電子裝置，其中，該導熱體包含複數聚合物顆粒，且該聚合物顆粒之直徑係小於或等於20微米。
  4. 如申請專利範圍第1項所述之電子裝置，其中，該導熱體包含有結合至該電子元件上之第一金屬層、結合至該散熱件上之第二金屬層、及位於該第一與第二金屬層之間的燒結銀層。
  5. 如申請專利範圍第4項所述之電子裝置，其中，形成該第一金屬層之材質係為鈦、鈦/銅或鈦/鎳、鈦/銀、鈦/銅/銀或鈦/鎳/銀。
  6. 如申請專利範圍第5項所述之電子裝置，其中，該第一金屬層之銀厚度係大於或等於200奈米。
  7. 如申請專利範圍第4項所述之電子裝置，其中，形成該第二金屬層之材質係為銀或鎳/銀。
  8. 如申請專利範圍第7項所述之電子裝置，其中，該第二金屬層之銀厚度係大於或等於200奈米。
  9. 如申請專利範圍第4項所述之電子裝置，其中，該第一金屬層係為濺鍍層。
  10. 如申請專利範圍第4項所述之電子裝置，其中，該第二金屬層係為濺鍍層。
  11. 如申請專利範圍第1項所述之電子裝置，其中，該電子元件具有相對之作用面與非作用面，且該導熱體係設於部分該非作用面上。
  12. 如申請專利範圍第11項所述之電子裝置，其中，該導熱體與該非作用面之接觸面積係小於該非作用面之面積的80%。
  13. 如申請專利範圍第1項所述之電子裝置，其中，該散熱件具有相對之第一表面與第二表面，且該導熱體係設於部分該第一表面或全部該第一表面上。
  14. 如申請專利範圍第13項所述之電子裝置，其中，該導熱體係設於部分該第一表面上，且該導熱體與該第一表面之接觸面積係小於該第一表面對應該非作用面之投影面積的80%。
  15. 如申請專利範圍第1項所述之電子裝置，復包括絕緣材，係形成於該散熱件上，以包覆該導熱體、或該導熱體與該電子元件。
  16. 一種電子裝置之製法，係包括：提供一電子元件；以及 藉由導熱體結合一散熱件於該電子元件上，且該導熱體包含銀材，其中，該導熱體之寬度小於該電子元件之寬度。
  17. 如申請專利範圍第16項所述之電子裝置之製法，其中，該電子元件係為主動元件、被動元件、封裝元件或其三者之組合。
  18. 如申請專利範圍第16項所述之電子裝置之製法，其中，該導熱體包含複數聚合物顆粒，且該聚合物顆粒之直徑係小於或等於20微米。
  19. 如申請專利範圍第16項所述之電子裝置之製法，其中，該導熱體包含有結合至該電子元件上之第一金屬層、結合至該散熱件上之第二金屬層、及位於該第一與第二金屬層之間的燒結銀層。
  20. 如申請專利範圍第19項所述之電子裝置之製法，其中，形成該第一金屬層之材質係為鈦、鈦/銅或鈦/鎳、鈦/銀、鈦/銅/銀或鈦/鎳/銀。
  21. 如申請專利範圍第20項所述之電子裝置之製法，其中，該第一金屬層之銀厚度係大於或等於200奈米。
  22. 如申請專利範圍第19項所述之電子裝置之製法，其中，形成該第二金屬層之材質係為銀或鎳/銀。
  23. 如申請專利範圍第22項所述之電子裝置之製法，其中，該第二金屬層之銀厚度係大於或等於200奈米。
  24. 如申請專利範圍第19項所述之電子裝置之製法，其中，該第一金屬層係以濺鍍方式形成者。
  25. 如申請專利範圍第19項所述之電子裝置之製法，其中，該第二金屬層係以濺鍍方式形成者。
  26. 如申請專利範圍第16項所述之電子裝置之製法，其中，該電子元件具有相對之作用面與非作用面，且該導熱體係設於部分該非作用面上。
  27. 如申請專利範圍第26項所述之電子裝置之製法，其中，該導熱體與該非作用面之接觸面積係小於該非作用面之面積的80%。
  28. 如申請專利範圍第16項所述之電子裝置之製法，其中，該散熱件具有相對之第一表面與第二表面，且該導熱體係設於部分該第一表面或全部該第一表面上。
  29. 如申請專利範圍第28項所述之電子裝置之製法，其中，該導熱體係設於部分該第一表面上，且該導熱體與該第一表面之接觸面積係小於該第一表面對應該非作用面之投影面積的80%。
  30. 如申請專利範圍第16項所述之電子裝置之製法，復包括形成絕緣材於該散熱件上，以包覆該導熱體、或該導熱體與該電子元件。
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