JP2008535239A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008535239A5 JP2008535239A5 JP2008504019A JP2008504019A JP2008535239A5 JP 2008535239 A5 JP2008535239 A5 JP 2008535239A5 JP 2008504019 A JP2008504019 A JP 2008504019A JP 2008504019 A JP2008504019 A JP 2008504019A JP 2008535239 A5 JP2008535239 A5 JP 2008535239A5
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- monitor structure
- filling
- monitor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 16
- 238000004519 manufacturing process Methods 0.000 claims 5
- 230000007547 defect Effects 0.000 claims 4
- 238000012544 monitoring process Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/907,494 US7240322B2 (en) | 2005-04-04 | 2005-04-04 | Method of adding fabrication monitors to integrated circuit chips |
| US10/907,494 | 2005-04-04 | ||
| PCT/US2005/047083 WO2006107356A2 (en) | 2005-04-04 | 2005-12-22 | Method of adding fabrication monitors to integrated circuit chips |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008535239A JP2008535239A (ja) | 2008-08-28 |
| JP2008535239A5 true JP2008535239A5 (enExample) | 2008-10-16 |
| JP5052501B2 JP5052501B2 (ja) | 2012-10-17 |
Family
ID=37072118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008504019A Expired - Fee Related JP5052501B2 (ja) | 2005-04-04 | 2005-12-22 | 製造モニタを集積回路チップに付加する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7240322B2 (enExample) |
| EP (1) | EP1869595B1 (enExample) |
| JP (1) | JP5052501B2 (enExample) |
| CN (1) | CN101147148B (enExample) |
| TW (1) | TWI362598B (enExample) |
| WO (1) | WO2006107356A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7240322B2 (en) * | 2005-04-04 | 2007-07-03 | International Business Machines Corporation | Method of adding fabrication monitors to integrated circuit chips |
| US7926006B2 (en) * | 2007-02-23 | 2011-04-12 | International Business Machines Corporation | Variable fill and cheese for mitigation of BEOL topography |
| JP5431661B2 (ja) * | 2007-09-05 | 2014-03-05 | ルネサスエレクトロニクス株式会社 | 半導体集積回路およびそのパターンレイアウト方法 |
| US7999566B2 (en) * | 2007-12-31 | 2011-08-16 | Hitachi Global Storage Technologies, Netherlands B.V. | Wafer level testing |
| US8716135B1 (en) | 2008-01-30 | 2014-05-06 | Cadence Design Systems, Inc. | Method of eliminating a lithography operation |
| US20110004598A1 (en) * | 2008-03-26 | 2011-01-06 | Nec Corporation | Service response performance analyzing device, method, program, and recording medium containing the program |
| US20110101534A1 (en) * | 2009-11-04 | 2011-05-05 | International Business Machines Corporation | Automated short length wire shape strapping and methods of fabricting the same |
| US8470674B2 (en) * | 2011-01-03 | 2013-06-25 | International Business Machines Corporation | Structure, method and system for complementary strain fill for integrated circuit chips |
| TWI447887B (zh) * | 2011-06-01 | 2014-08-01 | 矽品精密工業股份有限公司 | 電路元件孔鏈結構及其佈局方法 |
| US9524916B2 (en) * | 2012-10-31 | 2016-12-20 | International Business Machines Corporation | Structures and methods for determining TDDB reliability at reduced spacings using the structures |
| US9059052B2 (en) | 2013-05-16 | 2015-06-16 | International Business Machines Corporation | Alternating open-ended via chains for testing via formation and dielectric integrity |
| US9672316B2 (en) | 2013-07-17 | 2017-06-06 | Arm Limited | Integrated circuit manufacture using direct write lithography |
| JP5647328B2 (ja) * | 2013-12-09 | 2014-12-24 | ルネサスエレクトロニクス株式会社 | 半導体集積回路およびそのパターンレイアウト方法 |
| US9519210B2 (en) * | 2014-11-21 | 2016-12-13 | International Business Machines Corporation | Voltage contrast characterization structures and methods for within chip process variation characterization |
| US9799575B2 (en) * | 2015-12-16 | 2017-10-24 | Pdf Solutions, Inc. | Integrated circuit containing DOEs of NCEM-enabled fill cells |
| US10199283B1 (en) | 2015-02-03 | 2019-02-05 | Pdf Solutions, Inc. | Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage |
| US10593604B1 (en) | 2015-12-16 | 2020-03-17 | Pdf Solutions, Inc. | Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells |
| US10978438B1 (en) | 2015-12-16 | 2021-04-13 | Pdf Solutions, Inc. | IC with test structures and E-beam pads embedded within a contiguous standard cell area |
| US9905553B1 (en) | 2016-04-04 | 2018-02-27 | Pdf Solutions, Inc. | Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells |
| US9929063B1 (en) | 2016-04-04 | 2018-03-27 | Pdf Solutions, Inc. | Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates |
| US9627370B1 (en) | 2016-04-04 | 2017-04-18 | Pdf Solutions, Inc. | Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and TS-short-configured, NCEM-enabled fill cells |
| US9748153B1 (en) | 2017-03-29 | 2017-08-29 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure |
| US9773774B1 (en) | 2017-03-30 | 2017-09-26 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells |
| US9768083B1 (en) | 2017-06-27 | 2017-09-19 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells |
| US9786649B1 (en) | 2017-06-27 | 2017-10-10 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells |
| US10096530B1 (en) | 2017-06-28 | 2018-10-09 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells |
| US9865583B1 (en) | 2017-06-28 | 2018-01-09 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS602775B2 (ja) * | 1981-08-28 | 1985-01-23 | 富士通株式会社 | モニタ機能付大規模集積回路及びその製造方法 |
| US4801869A (en) * | 1987-04-27 | 1989-01-31 | International Business Machines Corporation | Semiconductor defect monitor for diagnosing processing-induced defects |
| US5159752A (en) * | 1989-03-22 | 1992-11-03 | Texas Instruments Incorporated | Scanning electron microscope based parametric testing method and apparatus |
| JPH0645439A (ja) * | 1992-07-23 | 1994-02-18 | Nec Corp | 半導体装置 |
| US5736863A (en) * | 1996-06-19 | 1998-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures |
| US5723874A (en) * | 1996-06-24 | 1998-03-03 | International Business Machines Corporation | Dishing and erosion monitor structure for damascene metal processing |
| US5781445A (en) * | 1996-08-22 | 1998-07-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma damage monitor |
| US5959459A (en) * | 1996-12-10 | 1999-09-28 | International Business Machines Corporation | Defect monitor and method for automated contactless inline wafer inspection |
| US6147361A (en) * | 1997-02-07 | 2000-11-14 | Taiwan Semiconductor Manufacturing Company | Polysilicon electromigration sensor which can detect and monitor electromigration in composite metal lines on integrated circuit structures with improved sensitivity |
| US5900644A (en) * | 1997-07-14 | 1999-05-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Test site and a method of monitoring via etch depths for semiconductor devices |
| US5952674A (en) * | 1998-03-18 | 1999-09-14 | International Business Machines Corporation | Topography monitor |
| US6121156A (en) * | 1998-04-28 | 2000-09-19 | Cypress Semiconductor Corporation | Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit |
| US6030732A (en) * | 1999-01-07 | 2000-02-29 | Taiwan Semiconductor Manufacturing Company | In-situ etch process control monitor |
| JP2000294730A (ja) * | 1999-04-09 | 2000-10-20 | Mitsubishi Electric Corp | システムlsiチップ及びその製造方法 |
| JP2001077114A (ja) * | 1999-09-03 | 2001-03-23 | Seiko Epson Corp | ダミーパターンの設計方法、ダミーパターンの設計装置、ダミーパターンを有する半導体装置及びその製造方法 |
| US6834117B1 (en) * | 1999-11-30 | 2004-12-21 | Texas Instruments Incorporated | X-ray defect detection in integrated circuit metallization |
| JP4307664B2 (ja) * | 1999-12-03 | 2009-08-05 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6433561B1 (en) * | 1999-12-14 | 2002-08-13 | Kla-Tencor Corporation | Methods and apparatus for optimizing semiconductor inspection tools |
| US6771806B1 (en) * | 1999-12-14 | 2004-08-03 | Kla-Tencor | Multi-pixel methods and apparatus for analysis of defect information from test structures on semiconductor devices |
| US6509197B1 (en) * | 1999-12-14 | 2003-01-21 | Kla-Tencor Corporation | Inspectable buried test structures and methods for inspecting the same |
| US6362634B1 (en) * | 2000-01-14 | 2002-03-26 | Advanced Micro Devices, Inc. | Integrated defect monitor structures for conductive features on a semiconductor topography and method of use |
| US6576923B2 (en) * | 2000-04-18 | 2003-06-10 | Kla-Tencor Corporation | Inspectable buried test structures and methods for inspecting the same |
| US6787271B2 (en) * | 2000-07-05 | 2004-09-07 | Numerical Technologies, Inc. | Design and layout of phase shifting photolithographic masks |
| US6808944B1 (en) * | 2000-07-24 | 2004-10-26 | Cypress Semiconductor Corporation | Structure and method for monitoring a semiconductor process, and method of making such a structure |
| KR100363093B1 (ko) * | 2000-07-28 | 2002-12-05 | 삼성전자 주식회사 | 반도체 소자의 층간 절연막 평탄화 방법 |
| JP2002110809A (ja) * | 2000-10-02 | 2002-04-12 | Mitsubishi Electric Corp | ダミーパターンの設計方法およびそれを用いた半導体装置の製造方法 |
| US6504225B1 (en) * | 2001-04-18 | 2003-01-07 | Advanced Micro Devices, Inc. | Teos seaming scribe line monitor |
| JP3556647B2 (ja) * | 2001-08-21 | 2004-08-18 | 沖電気工業株式会社 | 半導体素子の製造方法 |
| JP2005533363A (ja) * | 2001-09-28 | 2005-11-04 | ピー・デイ・エフ ソリユーシヨンズ インコーポレイテツド | 銅ダマシン技術におけるディッシングおよびエロージョン効果を評価するためのテスト構造 |
| US6624031B2 (en) * | 2001-11-20 | 2003-09-23 | International Business Machines Corporation | Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure |
| WO2003075190A1 (en) * | 2002-02-28 | 2003-09-12 | Pdf Solutions, Inc. | Back end of line clone test vehicle |
| KR100476890B1 (ko) * | 2002-04-11 | 2005-03-17 | 삼성전자주식회사 | 검사패턴 및 이를 이용한 화학적기계적 연마공정 제어방법 |
| KR100428791B1 (ko) * | 2002-04-17 | 2004-04-28 | 삼성전자주식회사 | 저유전율 절연막을 이용한 듀얼 다마신 배선 형성방법 |
| US6823496B2 (en) * | 2002-04-23 | 2004-11-23 | International Business Machines Corporation | Physical design characterization system |
| US6623995B1 (en) * | 2002-10-30 | 2003-09-23 | Taiwan Semiconductor Manufacturing Company | Optimized monitor method for a metal patterning process |
| US6774395B1 (en) * | 2003-01-15 | 2004-08-10 | Advanced Micro Devices, Inc. | Apparatus and methods for characterizing floating body effects in SOI devices |
| US7507598B2 (en) * | 2003-06-06 | 2009-03-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor fabrication method and structure |
| US7089522B2 (en) * | 2003-06-11 | 2006-08-08 | Chartered Semiconductor Manufacturing, Ltd. | Device, design and method for a slot in a conductive area |
| US7135344B2 (en) * | 2003-07-11 | 2006-11-14 | Applied Materials, Israel, Ltd. | Design-based monitoring |
| US6936920B2 (en) * | 2003-08-29 | 2005-08-30 | Lsi Logic Corporation | Voltage contrast monitor for integrated circuit defects |
| US6998866B1 (en) * | 2004-07-27 | 2006-02-14 | International Business Machines Corporation | Circuit and method for monitoring defects |
| US7194706B2 (en) * | 2004-07-27 | 2007-03-20 | International Business Machines Corporation | Designing scan chains with specific parameter sensitivities to identify process defects |
| US7093213B2 (en) * | 2004-08-13 | 2006-08-15 | International Business Machines Corporation | Method for designing an integrated circuit defect monitor |
| US7240322B2 (en) * | 2005-04-04 | 2007-07-03 | International Business Machines Corporation | Method of adding fabrication monitors to integrated circuit chips |
-
2005
- 2005-04-04 US US10/907,494 patent/US7240322B2/en not_active Expired - Lifetime
- 2005-12-22 WO PCT/US2005/047083 patent/WO2006107356A2/en not_active Ceased
- 2005-12-22 CN CN2005800492611A patent/CN101147148B/zh not_active Expired - Fee Related
- 2005-12-22 EP EP05855609.3A patent/EP1869595B1/en not_active Expired - Lifetime
- 2005-12-22 JP JP2008504019A patent/JP5052501B2/ja not_active Expired - Fee Related
-
2006
- 2006-04-03 TW TW095111771A patent/TWI362598B/zh not_active IP Right Cessation
-
2007
- 2007-03-19 US US11/687,731 patent/US7323278B2/en not_active Expired - Lifetime
- 2007-09-24 US US11/859,890 patent/US7620931B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008535239A5 (enExample) | ||
| US20050141764A1 (en) | Pattern analysis method and pattern analysis apparatus | |
| JP2008527710A5 (enExample) | ||
| KR101671665B1 (ko) | 전도성 라인 패터닝 | |
| CN109075121A (zh) | 用于基于后端线(beol)间隔物的互连的利用光桶的消减性插塞和片图案化 | |
| JP2022093260A (ja) | 半導体ユニットのテスト方法 | |
| US8074188B2 (en) | Method for designing mask including forming a mesh dummy pattern | |
| US20050273739A1 (en) | Pattern analysis method, pattern analysis apparatus, yield calculation method and yield calculation apparatus | |
| JP2001306641A (ja) | 半導体集積回路の自動配置配線方法 | |
| JP2002289817A (ja) | 半導体集積回路装置及びその製造方法 | |
| US7308395B2 (en) | Simulation circuit pattern evaluation method, manufacturing method of semiconductor integrated circuit, test substrate, and test substrate group | |
| JPH09153550A (ja) | パターン発生方法 | |
| JP3447673B2 (ja) | 半導体装置の設計方法及び半導体装置の製造方法 | |
| KR100763709B1 (ko) | 반도체 소자의 패드 형성 방법 | |
| JP3913108B2 (ja) | 半導体集積回路装置の製造方法 | |
| JP2008172001A (ja) | 半導体装置の歩留まり算出方法及びコンピュータプログラム | |
| TWI550697B (zh) | 半導體元件的製作以及檢測方法 | |
| US7745239B1 (en) | Arrangement of fill unit elements in an integrated circuit interconnect layer | |
| KR100877096B1 (ko) | 더미 패턴을 갖는 반도체 소자 및 그 형성방법 | |
| US9087880B2 (en) | Removing metal fills in a wiring layer | |
| JP2003142583A (ja) | 半導体装置及びその設計方法 | |
| KR100840666B1 (ko) | 반도체 소자의 모니터링 패턴 제조방법 | |
| JP2007012773A (ja) | 多層配線を有する半導体装置 | |
| KR100591155B1 (ko) | 반도체 소자의 금속 배선 형성 방법 | |
| US7589011B2 (en) | Semiconductor device and method of forming intermetal dielectric layer |