WO2006107356A2 - Method of adding fabrication monitors to integrated circuit chips - Google Patents

Method of adding fabrication monitors to integrated circuit chips Download PDF

Info

Publication number
WO2006107356A2
WO2006107356A2 PCT/US2005/047083 US2005047083W WO2006107356A2 WO 2006107356 A2 WO2006107356 A2 WO 2006107356A2 US 2005047083 W US2005047083 W US 2005047083W WO 2006107356 A2 WO2006107356 A2 WO 2006107356A2
Authority
WO
WIPO (PCT)
Prior art keywords
shapes
integrated circuit
fill
monitor
monitor structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/047083
Other languages
English (en)
French (fr)
Other versions
WO2006107356A3 (en
Inventor
James W. Adkisson
Greg Bazan
John M. Cohn
Matthew S. Grady
Thomas G. Sopchak
David P. Vallett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to EP05855609.3A priority Critical patent/EP1869595B1/en
Priority to JP2008504019A priority patent/JP5052501B2/ja
Priority to CN2005800492611A priority patent/CN101147148B/zh
Publication of WO2006107356A2 publication Critical patent/WO2006107356A2/en
Anticipated expiration legal-status Critical
Publication of WO2006107356A3 publication Critical patent/WO2006107356A3/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • FIG. 11 is a flowchart of a second embodiment of the present invention.
  • CMP chemical- mechanical-polish
  • damascene or subtractive fill shapes are introduced into the spaces between conductors according to complex fill shape rules, some of which are discussed infra.
  • the present invention will be described using damascene structures (wires, vias, fill shapes and monitor structures as described infra) but it should be understood that the present invention is applicable to subtractive structures (wires, vias, fill shapes and monitor structures) as well. Further, the present invention is applicable to structures wherein the wires are formed by methods other than damascene and subtractive processes but that require a CMP step of a dielectric layer in contact with the wires as part of the structures fabrication process.
  • FIG. 2A is a top view and FIG. 2B is a cross-sectional view through line 2B- 2B of FIG. 2A of a portion of an integrated circuit chip having damascene fill shapes illustrating a first implementation example of the present invention.
  • an electrically probeable opens monitor 160 replaces a subset of damascene fill shapes 150 of FIG. IA and IB.
  • opens monitor 160 comprises damascene fill shaped regions 150A integrally connected in series by damascene wires 165.
  • Filled shaped damascene regions 150A are not damascene fill shapes but have an identical or similar geometry to that of damascene fill shapes.
  • Damascene wires 205 have the width W2.
  • FIG. 6A is a top view and FIG. 6B is a cross-sectional view through line 6B- 6B of FIG. 6A of a portion of an integrated circuit chip having damascene fill shapes illustrating a fifth implementation example of the present invention.
  • an electrically probeable opens and shorts monitor 210 replaces a subset of damascene fill shapes 150 of FIGs. IA and IB.
  • Opens and shorts monitor 210 includes a first damascene serpentine wire 215 and a second damascene serpentine wire 215 spaced a distance S7 apart.
  • a computer program with an appropriate application interface may be created by one of skill in the art and stored on the system or a data and/or program storage device to simplify the practicing of this invention.
  • information for or the computer program created to run the present invention is loaded on the appropriate removable data and/or program storage device 430, fed through data port 460 or typed in using keyboard 445.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
PCT/US2005/047083 2005-04-04 2005-12-22 Method of adding fabrication monitors to integrated circuit chips Ceased WO2006107356A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP05855609.3A EP1869595B1 (en) 2005-04-04 2005-12-22 Method of adding fabrication monitors to integrated circuit chips
JP2008504019A JP5052501B2 (ja) 2005-04-04 2005-12-22 製造モニタを集積回路チップに付加する方法
CN2005800492611A CN101147148B (zh) 2005-04-04 2005-12-22 将制作监视器添加到集成电路芯片的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/907,494 US7240322B2 (en) 2005-04-04 2005-04-04 Method of adding fabrication monitors to integrated circuit chips
US10/907,494 2005-04-04

Publications (2)

Publication Number Publication Date
WO2006107356A2 true WO2006107356A2 (en) 2006-10-12
WO2006107356A3 WO2006107356A3 (en) 2007-11-22

Family

ID=37072118

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/047083 Ceased WO2006107356A2 (en) 2005-04-04 2005-12-22 Method of adding fabrication monitors to integrated circuit chips

Country Status (6)

Country Link
US (3) US7240322B2 (enExample)
EP (1) EP1869595B1 (enExample)
JP (1) JP5052501B2 (enExample)
CN (1) CN101147148B (enExample)
TW (1) TWI362598B (enExample)
WO (1) WO2006107356A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009064857A (ja) * 2007-09-05 2009-03-26 Renesas Technology Corp 半導体集積回路およびそのパターンレイアウト方法
JP2014090187A (ja) * 2013-12-09 2014-05-15 Renesas Electronics Corp 半導体集積回路およびそのパターンレイアウト方法

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7240322B2 (en) * 2005-04-04 2007-07-03 International Business Machines Corporation Method of adding fabrication monitors to integrated circuit chips
US7926006B2 (en) * 2007-02-23 2011-04-12 International Business Machines Corporation Variable fill and cheese for mitigation of BEOL topography
US7999566B2 (en) * 2007-12-31 2011-08-16 Hitachi Global Storage Technologies, Netherlands B.V. Wafer level testing
US8716135B1 (en) 2008-01-30 2014-05-06 Cadence Design Systems, Inc. Method of eliminating a lithography operation
US20110004598A1 (en) * 2008-03-26 2011-01-06 Nec Corporation Service response performance analyzing device, method, program, and recording medium containing the program
US20110101534A1 (en) * 2009-11-04 2011-05-05 International Business Machines Corporation Automated short length wire shape strapping and methods of fabricting the same
US8470674B2 (en) * 2011-01-03 2013-06-25 International Business Machines Corporation Structure, method and system for complementary strain fill for integrated circuit chips
TWI447887B (zh) * 2011-06-01 2014-08-01 矽品精密工業股份有限公司 電路元件孔鏈結構及其佈局方法
US9524916B2 (en) * 2012-10-31 2016-12-20 International Business Machines Corporation Structures and methods for determining TDDB reliability at reduced spacings using the structures
US9059052B2 (en) 2013-05-16 2015-06-16 International Business Machines Corporation Alternating open-ended via chains for testing via formation and dielectric integrity
US9672316B2 (en) 2013-07-17 2017-06-06 Arm Limited Integrated circuit manufacture using direct write lithography
US9519210B2 (en) * 2014-11-21 2016-12-13 International Business Machines Corporation Voltage contrast characterization structures and methods for within chip process variation characterization
US9799575B2 (en) * 2015-12-16 2017-10-24 Pdf Solutions, Inc. Integrated circuit containing DOEs of NCEM-enabled fill cells
US10199283B1 (en) 2015-02-03 2019-02-05 Pdf Solutions, Inc. Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage
US10593604B1 (en) 2015-12-16 2020-03-17 Pdf Solutions, Inc. Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
US10978438B1 (en) 2015-12-16 2021-04-13 Pdf Solutions, Inc. IC with test structures and E-beam pads embedded within a contiguous standard cell area
US9905553B1 (en) 2016-04-04 2018-02-27 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells
US9929063B1 (en) 2016-04-04 2018-03-27 Pdf Solutions, Inc. Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates
US9627370B1 (en) 2016-04-04 2017-04-18 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and TS-short-configured, NCEM-enabled fill cells
US9748153B1 (en) 2017-03-29 2017-08-29 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure
US9773774B1 (en) 2017-03-30 2017-09-26 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells
US9768083B1 (en) 2017-06-27 2017-09-19 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells
US9786649B1 (en) 2017-06-27 2017-10-10 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells
US10096530B1 (en) 2017-06-28 2018-10-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells
US9865583B1 (en) 2017-06-28 2018-01-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602775B2 (ja) * 1981-08-28 1985-01-23 富士通株式会社 モニタ機能付大規模集積回路及びその製造方法
US4801869A (en) * 1987-04-27 1989-01-31 International Business Machines Corporation Semiconductor defect monitor for diagnosing processing-induced defects
US5159752A (en) * 1989-03-22 1992-11-03 Texas Instruments Incorporated Scanning electron microscope based parametric testing method and apparatus
JPH0645439A (ja) * 1992-07-23 1994-02-18 Nec Corp 半導体装置
US5736863A (en) * 1996-06-19 1998-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures
US5723874A (en) * 1996-06-24 1998-03-03 International Business Machines Corporation Dishing and erosion monitor structure for damascene metal processing
US5781445A (en) * 1996-08-22 1998-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma damage monitor
US5959459A (en) * 1996-12-10 1999-09-28 International Business Machines Corporation Defect monitor and method for automated contactless inline wafer inspection
US6147361A (en) * 1997-02-07 2000-11-14 Taiwan Semiconductor Manufacturing Company Polysilicon electromigration sensor which can detect and monitor electromigration in composite metal lines on integrated circuit structures with improved sensitivity
US5900644A (en) * 1997-07-14 1999-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Test site and a method of monitoring via etch depths for semiconductor devices
US5952674A (en) * 1998-03-18 1999-09-14 International Business Machines Corporation Topography monitor
US6121156A (en) * 1998-04-28 2000-09-19 Cypress Semiconductor Corporation Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit
US6030732A (en) * 1999-01-07 2000-02-29 Taiwan Semiconductor Manufacturing Company In-situ etch process control monitor
JP2000294730A (ja) * 1999-04-09 2000-10-20 Mitsubishi Electric Corp システムlsiチップ及びその製造方法
JP2001077114A (ja) * 1999-09-03 2001-03-23 Seiko Epson Corp ダミーパターンの設計方法、ダミーパターンの設計装置、ダミーパターンを有する半導体装置及びその製造方法
US6834117B1 (en) * 1999-11-30 2004-12-21 Texas Instruments Incorporated X-ray defect detection in integrated circuit metallization
JP4307664B2 (ja) * 1999-12-03 2009-08-05 株式会社ルネサステクノロジ 半導体装置
US6433561B1 (en) * 1999-12-14 2002-08-13 Kla-Tencor Corporation Methods and apparatus for optimizing semiconductor inspection tools
US6771806B1 (en) * 1999-12-14 2004-08-03 Kla-Tencor Multi-pixel methods and apparatus for analysis of defect information from test structures on semiconductor devices
US6509197B1 (en) * 1999-12-14 2003-01-21 Kla-Tencor Corporation Inspectable buried test structures and methods for inspecting the same
US6362634B1 (en) * 2000-01-14 2002-03-26 Advanced Micro Devices, Inc. Integrated defect monitor structures for conductive features on a semiconductor topography and method of use
US6576923B2 (en) * 2000-04-18 2003-06-10 Kla-Tencor Corporation Inspectable buried test structures and methods for inspecting the same
US6787271B2 (en) * 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6808944B1 (en) * 2000-07-24 2004-10-26 Cypress Semiconductor Corporation Structure and method for monitoring a semiconductor process, and method of making such a structure
KR100363093B1 (ko) * 2000-07-28 2002-12-05 삼성전자 주식회사 반도체 소자의 층간 절연막 평탄화 방법
JP2002110809A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp ダミーパターンの設計方法およびそれを用いた半導体装置の製造方法
US6504225B1 (en) * 2001-04-18 2003-01-07 Advanced Micro Devices, Inc. Teos seaming scribe line monitor
JP3556647B2 (ja) * 2001-08-21 2004-08-18 沖電気工業株式会社 半導体素子の製造方法
JP2005533363A (ja) * 2001-09-28 2005-11-04 ピー・デイ・エフ ソリユーシヨンズ インコーポレイテツド 銅ダマシン技術におけるディッシングおよびエロージョン効果を評価するためのテスト構造
US6624031B2 (en) * 2001-11-20 2003-09-23 International Business Machines Corporation Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure
WO2003075190A1 (en) * 2002-02-28 2003-09-12 Pdf Solutions, Inc. Back end of line clone test vehicle
KR100476890B1 (ko) * 2002-04-11 2005-03-17 삼성전자주식회사 검사패턴 및 이를 이용한 화학적기계적 연마공정 제어방법
KR100428791B1 (ko) * 2002-04-17 2004-04-28 삼성전자주식회사 저유전율 절연막을 이용한 듀얼 다마신 배선 형성방법
US6823496B2 (en) * 2002-04-23 2004-11-23 International Business Machines Corporation Physical design characterization system
US6623995B1 (en) * 2002-10-30 2003-09-23 Taiwan Semiconductor Manufacturing Company Optimized monitor method for a metal patterning process
US6774395B1 (en) * 2003-01-15 2004-08-10 Advanced Micro Devices, Inc. Apparatus and methods for characterizing floating body effects in SOI devices
US7507598B2 (en) * 2003-06-06 2009-03-24 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor fabrication method and structure
US7089522B2 (en) * 2003-06-11 2006-08-08 Chartered Semiconductor Manufacturing, Ltd. Device, design and method for a slot in a conductive area
US7135344B2 (en) * 2003-07-11 2006-11-14 Applied Materials, Israel, Ltd. Design-based monitoring
US6936920B2 (en) * 2003-08-29 2005-08-30 Lsi Logic Corporation Voltage contrast monitor for integrated circuit defects
US6998866B1 (en) * 2004-07-27 2006-02-14 International Business Machines Corporation Circuit and method for monitoring defects
US7194706B2 (en) * 2004-07-27 2007-03-20 International Business Machines Corporation Designing scan chains with specific parameter sensitivities to identify process defects
US7093213B2 (en) * 2004-08-13 2006-08-15 International Business Machines Corporation Method for designing an integrated circuit defect monitor
US7240322B2 (en) * 2005-04-04 2007-07-03 International Business Machines Corporation Method of adding fabrication monitors to integrated circuit chips

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009064857A (ja) * 2007-09-05 2009-03-26 Renesas Technology Corp 半導体集積回路およびそのパターンレイアウト方法
JP2014090187A (ja) * 2013-12-09 2014-05-15 Renesas Electronics Corp 半導体集積回路およびそのパターンレイアウト方法

Also Published As

Publication number Publication date
US20080017857A1 (en) 2008-01-24
TW200705229A (en) 2007-02-01
EP1869595A2 (en) 2007-12-26
US7240322B2 (en) 2007-07-03
CN101147148A (zh) 2008-03-19
JP2008535239A (ja) 2008-08-28
US20060225023A1 (en) 2006-10-05
US7323278B2 (en) 2008-01-29
CN101147148B (zh) 2010-07-07
US7620931B2 (en) 2009-11-17
JP5052501B2 (ja) 2012-10-17
WO2006107356A3 (en) 2007-11-22
TWI362598B (en) 2012-04-21
EP1869595B1 (en) 2013-08-07
EP1869595A4 (en) 2009-12-16
US20070160920A1 (en) 2007-07-12

Similar Documents

Publication Publication Date Title
EP1869595B1 (en) Method of adding fabrication monitors to integrated circuit chips
US6982476B2 (en) Integrated circuit feature layout for improved chemical mechanical polishing
US20050141764A1 (en) Pattern analysis method and pattern analysis apparatus
CN100390924C (zh) 半导体器件及其制造方法和装置
US8129095B2 (en) Methods, photomasks and methods of fabricating photomasks for improving damascene wire uniformity without reducing performance
JP2003503847A (ja) 半導体デバイス及びマスク設計方法
JP2998832B2 (ja) 半導体装置のパターン形成方法
US20180226339A1 (en) Three plate mim capacitor via integrity verification
US20050280159A1 (en) Computer implemented method for designing a semiconductor device, an automated design system and a semiconductor device
US11508659B2 (en) Interconnect structure in semiconductor device and method of forming the same
US20240378365A1 (en) Routing structure of semiconductor device and forming method thereof
US6204073B1 (en) Shallow trench isolation with conductive hard mask for in-line moat/trench width electrical measurements
JP2002289817A (ja) 半導体集積回路装置及びその製造方法
US8598704B2 (en) Semiconductor device
US20090121357A1 (en) Design structure for bridge of a seminconductor internal node
JP3779307B2 (ja) 抵抗不良評価装置、抵抗不良評価方法及び抵抗不良評価装置の製造方法
JP2003050263A (ja) 半導体装置およびteg配置方法
US9443775B2 (en) Lithography process monitoring of local interconnect continuity
US9391056B2 (en) Mask optimization for multi-layer contacts
US20070096309A1 (en) Semiconductor device, method of forming wiring pattern, and method of generating mask wiring data
Levinson et al. Kye et al.(43) Pub. Date: Jul. 24, 2014
Walker Yield simulation for integrated circuits (fault analysis, redundancy analysis, fabrication defects)
KR20050002311A (ko) 반도체 소자의 금속배선 형성방법

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200580049261.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application
ENP Entry into the national phase

Ref document number: 2008504019

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2005855609

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: RU