WO2006107356A2 - Method of adding fabrication monitors to integrated circuit chips - Google Patents
Method of adding fabrication monitors to integrated circuit chips Download PDFInfo
- Publication number
- WO2006107356A2 WO2006107356A2 PCT/US2005/047083 US2005047083W WO2006107356A2 WO 2006107356 A2 WO2006107356 A2 WO 2006107356A2 US 2005047083 W US2005047083 W US 2005047083W WO 2006107356 A2 WO2006107356 A2 WO 2006107356A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- shapes
- integrated circuit
- fill
- monitor
- monitor structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- FIG. 11 is a flowchart of a second embodiment of the present invention.
- CMP chemical- mechanical-polish
- damascene or subtractive fill shapes are introduced into the spaces between conductors according to complex fill shape rules, some of which are discussed infra.
- the present invention will be described using damascene structures (wires, vias, fill shapes and monitor structures as described infra) but it should be understood that the present invention is applicable to subtractive structures (wires, vias, fill shapes and monitor structures) as well. Further, the present invention is applicable to structures wherein the wires are formed by methods other than damascene and subtractive processes but that require a CMP step of a dielectric layer in contact with the wires as part of the structures fabrication process.
- FIG. 2A is a top view and FIG. 2B is a cross-sectional view through line 2B- 2B of FIG. 2A of a portion of an integrated circuit chip having damascene fill shapes illustrating a first implementation example of the present invention.
- an electrically probeable opens monitor 160 replaces a subset of damascene fill shapes 150 of FIG. IA and IB.
- opens monitor 160 comprises damascene fill shaped regions 150A integrally connected in series by damascene wires 165.
- Filled shaped damascene regions 150A are not damascene fill shapes but have an identical or similar geometry to that of damascene fill shapes.
- Damascene wires 205 have the width W2.
- FIG. 6A is a top view and FIG. 6B is a cross-sectional view through line 6B- 6B of FIG. 6A of a portion of an integrated circuit chip having damascene fill shapes illustrating a fifth implementation example of the present invention.
- an electrically probeable opens and shorts monitor 210 replaces a subset of damascene fill shapes 150 of FIGs. IA and IB.
- Opens and shorts monitor 210 includes a first damascene serpentine wire 215 and a second damascene serpentine wire 215 spaced a distance S7 apart.
- a computer program with an appropriate application interface may be created by one of skill in the art and stored on the system or a data and/or program storage device to simplify the practicing of this invention.
- information for or the computer program created to run the present invention is loaded on the appropriate removable data and/or program storage device 430, fed through data port 460 or typed in using keyboard 445.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05855609.3A EP1869595B1 (en) | 2005-04-04 | 2005-12-22 | Method of adding fabrication monitors to integrated circuit chips |
| JP2008504019A JP5052501B2 (ja) | 2005-04-04 | 2005-12-22 | 製造モニタを集積回路チップに付加する方法 |
| CN2005800492611A CN101147148B (zh) | 2005-04-04 | 2005-12-22 | 将制作监视器添加到集成电路芯片的方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/907,494 US7240322B2 (en) | 2005-04-04 | 2005-04-04 | Method of adding fabrication monitors to integrated circuit chips |
| US10/907,494 | 2005-04-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2006107356A2 true WO2006107356A2 (en) | 2006-10-12 |
| WO2006107356A3 WO2006107356A3 (en) | 2007-11-22 |
Family
ID=37072118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2005/047083 Ceased WO2006107356A2 (en) | 2005-04-04 | 2005-12-22 | Method of adding fabrication monitors to integrated circuit chips |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7240322B2 (enExample) |
| EP (1) | EP1869595B1 (enExample) |
| JP (1) | JP5052501B2 (enExample) |
| CN (1) | CN101147148B (enExample) |
| TW (1) | TWI362598B (enExample) |
| WO (1) | WO2006107356A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009064857A (ja) * | 2007-09-05 | 2009-03-26 | Renesas Technology Corp | 半導体集積回路およびそのパターンレイアウト方法 |
| JP2014090187A (ja) * | 2013-12-09 | 2014-05-15 | Renesas Electronics Corp | 半導体集積回路およびそのパターンレイアウト方法 |
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| US7240322B2 (en) * | 2005-04-04 | 2007-07-03 | International Business Machines Corporation | Method of adding fabrication monitors to integrated circuit chips |
| US7926006B2 (en) * | 2007-02-23 | 2011-04-12 | International Business Machines Corporation | Variable fill and cheese for mitigation of BEOL topography |
| US7999566B2 (en) * | 2007-12-31 | 2011-08-16 | Hitachi Global Storage Technologies, Netherlands B.V. | Wafer level testing |
| US8716135B1 (en) | 2008-01-30 | 2014-05-06 | Cadence Design Systems, Inc. | Method of eliminating a lithography operation |
| US20110004598A1 (en) * | 2008-03-26 | 2011-01-06 | Nec Corporation | Service response performance analyzing device, method, program, and recording medium containing the program |
| US20110101534A1 (en) * | 2009-11-04 | 2011-05-05 | International Business Machines Corporation | Automated short length wire shape strapping and methods of fabricting the same |
| US8470674B2 (en) * | 2011-01-03 | 2013-06-25 | International Business Machines Corporation | Structure, method and system for complementary strain fill for integrated circuit chips |
| TWI447887B (zh) * | 2011-06-01 | 2014-08-01 | 矽品精密工業股份有限公司 | 電路元件孔鏈結構及其佈局方法 |
| US9524916B2 (en) * | 2012-10-31 | 2016-12-20 | International Business Machines Corporation | Structures and methods for determining TDDB reliability at reduced spacings using the structures |
| US9059052B2 (en) | 2013-05-16 | 2015-06-16 | International Business Machines Corporation | Alternating open-ended via chains for testing via formation and dielectric integrity |
| US9672316B2 (en) | 2013-07-17 | 2017-06-06 | Arm Limited | Integrated circuit manufacture using direct write lithography |
| US9519210B2 (en) * | 2014-11-21 | 2016-12-13 | International Business Machines Corporation | Voltage contrast characterization structures and methods for within chip process variation characterization |
| US9799575B2 (en) * | 2015-12-16 | 2017-10-24 | Pdf Solutions, Inc. | Integrated circuit containing DOEs of NCEM-enabled fill cells |
| US10199283B1 (en) | 2015-02-03 | 2019-02-05 | Pdf Solutions, Inc. | Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage |
| US10593604B1 (en) | 2015-12-16 | 2020-03-17 | Pdf Solutions, Inc. | Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells |
| US10978438B1 (en) | 2015-12-16 | 2021-04-13 | Pdf Solutions, Inc. | IC with test structures and E-beam pads embedded within a contiguous standard cell area |
| US9905553B1 (en) | 2016-04-04 | 2018-02-27 | Pdf Solutions, Inc. | Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells |
| US9929063B1 (en) | 2016-04-04 | 2018-03-27 | Pdf Solutions, Inc. | Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates |
| US9627370B1 (en) | 2016-04-04 | 2017-04-18 | Pdf Solutions, Inc. | Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and TS-short-configured, NCEM-enabled fill cells |
| US9748153B1 (en) | 2017-03-29 | 2017-08-29 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure |
| US9773774B1 (en) | 2017-03-30 | 2017-09-26 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells |
| US9768083B1 (en) | 2017-06-27 | 2017-09-19 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells |
| US9786649B1 (en) | 2017-06-27 | 2017-10-10 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells |
| US10096530B1 (en) | 2017-06-28 | 2018-10-09 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells |
| US9865583B1 (en) | 2017-06-28 | 2018-01-09 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells |
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-
2005
- 2005-04-04 US US10/907,494 patent/US7240322B2/en not_active Expired - Lifetime
- 2005-12-22 WO PCT/US2005/047083 patent/WO2006107356A2/en not_active Ceased
- 2005-12-22 CN CN2005800492611A patent/CN101147148B/zh not_active Expired - Fee Related
- 2005-12-22 EP EP05855609.3A patent/EP1869595B1/en not_active Expired - Lifetime
- 2005-12-22 JP JP2008504019A patent/JP5052501B2/ja not_active Expired - Fee Related
-
2006
- 2006-04-03 TW TW095111771A patent/TWI362598B/zh not_active IP Right Cessation
-
2007
- 2007-03-19 US US11/687,731 patent/US7323278B2/en not_active Expired - Lifetime
- 2007-09-24 US US11/859,890 patent/US7620931B2/en not_active Expired - Fee Related
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009064857A (ja) * | 2007-09-05 | 2009-03-26 | Renesas Technology Corp | 半導体集積回路およびそのパターンレイアウト方法 |
| JP2014090187A (ja) * | 2013-12-09 | 2014-05-15 | Renesas Electronics Corp | 半導体集積回路およびそのパターンレイアウト方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20080017857A1 (en) | 2008-01-24 |
| TW200705229A (en) | 2007-02-01 |
| EP1869595A2 (en) | 2007-12-26 |
| US7240322B2 (en) | 2007-07-03 |
| CN101147148A (zh) | 2008-03-19 |
| JP2008535239A (ja) | 2008-08-28 |
| US20060225023A1 (en) | 2006-10-05 |
| US7323278B2 (en) | 2008-01-29 |
| CN101147148B (zh) | 2010-07-07 |
| US7620931B2 (en) | 2009-11-17 |
| JP5052501B2 (ja) | 2012-10-17 |
| WO2006107356A3 (en) | 2007-11-22 |
| TWI362598B (en) | 2012-04-21 |
| EP1869595B1 (en) | 2013-08-07 |
| EP1869595A4 (en) | 2009-12-16 |
| US20070160920A1 (en) | 2007-07-12 |
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