CN101147148B - 将制作监视器添加到集成电路芯片的方法 - Google Patents

将制作监视器添加到集成电路芯片的方法 Download PDF

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Publication number
CN101147148B
CN101147148B CN2005800492611A CN200580049261A CN101147148B CN 101147148 B CN101147148 B CN 101147148B CN 2005800492611 A CN2005800492611 A CN 2005800492611A CN 200580049261 A CN200580049261 A CN 200580049261A CN 101147148 B CN101147148 B CN 101147148B
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integrated circuit
shapes
monitor
fill
shape
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Expired - Fee Related
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Chinese (zh)
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CN101147148A (zh
Inventor
J·W·阿基森
G·巴赞
J·M·科恩
M·S·格雷迪
T·G·索普查克
D·P·瓦尔特
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International Business Machines Corp
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International Business Machines Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN2005800492611A 2005-04-04 2005-12-22 将制作监视器添加到集成电路芯片的方法 Expired - Fee Related CN101147148B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/907,494 US7240322B2 (en) 2005-04-04 2005-04-04 Method of adding fabrication monitors to integrated circuit chips
US10/907,494 2005-04-04
PCT/US2005/047083 WO2006107356A2 (en) 2005-04-04 2005-12-22 Method of adding fabrication monitors to integrated circuit chips

Publications (2)

Publication Number Publication Date
CN101147148A CN101147148A (zh) 2008-03-19
CN101147148B true CN101147148B (zh) 2010-07-07

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CN2005800492611A Expired - Fee Related CN101147148B (zh) 2005-04-04 2005-12-22 将制作监视器添加到集成电路芯片的方法

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US (3) US7240322B2 (enExample)
EP (1) EP1869595B1 (enExample)
JP (1) JP5052501B2 (enExample)
CN (1) CN101147148B (enExample)
TW (1) TWI362598B (enExample)
WO (1) WO2006107356A2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7240322B2 (en) * 2005-04-04 2007-07-03 International Business Machines Corporation Method of adding fabrication monitors to integrated circuit chips
US7926006B2 (en) * 2007-02-23 2011-04-12 International Business Machines Corporation Variable fill and cheese for mitigation of BEOL topography
JP5431661B2 (ja) * 2007-09-05 2014-03-05 ルネサスエレクトロニクス株式会社 半導体集積回路およびそのパターンレイアウト方法
US7999566B2 (en) * 2007-12-31 2011-08-16 Hitachi Global Storage Technologies, Netherlands B.V. Wafer level testing
US8716135B1 (en) 2008-01-30 2014-05-06 Cadence Design Systems, Inc. Method of eliminating a lithography operation
US20110004598A1 (en) * 2008-03-26 2011-01-06 Nec Corporation Service response performance analyzing device, method, program, and recording medium containing the program
US20110101534A1 (en) * 2009-11-04 2011-05-05 International Business Machines Corporation Automated short length wire shape strapping and methods of fabricting the same
US8470674B2 (en) * 2011-01-03 2013-06-25 International Business Machines Corporation Structure, method and system for complementary strain fill for integrated circuit chips
TWI447887B (zh) * 2011-06-01 2014-08-01 矽品精密工業股份有限公司 電路元件孔鏈結構及其佈局方法
US9524916B2 (en) * 2012-10-31 2016-12-20 International Business Machines Corporation Structures and methods for determining TDDB reliability at reduced spacings using the structures
US9059052B2 (en) 2013-05-16 2015-06-16 International Business Machines Corporation Alternating open-ended via chains for testing via formation and dielectric integrity
US9672316B2 (en) 2013-07-17 2017-06-06 Arm Limited Integrated circuit manufacture using direct write lithography
JP5647328B2 (ja) * 2013-12-09 2014-12-24 ルネサスエレクトロニクス株式会社 半導体集積回路およびそのパターンレイアウト方法
US9519210B2 (en) * 2014-11-21 2016-12-13 International Business Machines Corporation Voltage contrast characterization structures and methods for within chip process variation characterization
US9799575B2 (en) * 2015-12-16 2017-10-24 Pdf Solutions, Inc. Integrated circuit containing DOEs of NCEM-enabled fill cells
US10199283B1 (en) 2015-02-03 2019-02-05 Pdf Solutions, Inc. Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage
US10593604B1 (en) 2015-12-16 2020-03-17 Pdf Solutions, Inc. Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
US10978438B1 (en) 2015-12-16 2021-04-13 Pdf Solutions, Inc. IC with test structures and E-beam pads embedded within a contiguous standard cell area
US9905553B1 (en) 2016-04-04 2018-02-27 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells
US9929063B1 (en) 2016-04-04 2018-03-27 Pdf Solutions, Inc. Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates
US9627370B1 (en) 2016-04-04 2017-04-18 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and TS-short-configured, NCEM-enabled fill cells
US9748153B1 (en) 2017-03-29 2017-08-29 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure
US9773774B1 (en) 2017-03-30 2017-09-26 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells
US9768083B1 (en) 2017-06-27 2017-09-19 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells
US9786649B1 (en) 2017-06-27 2017-10-10 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells
US10096530B1 (en) 2017-06-28 2018-10-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells
US9865583B1 (en) 2017-06-28 2018-01-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6433561B1 (en) * 1999-12-14 2002-08-13 Kla-Tencor Corporation Methods and apparatus for optimizing semiconductor inspection tools
CN1459844A (zh) * 2002-04-17 2003-12-03 三星电子株式会社 使用低-k介电材料形成双大马士革互连的方法

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602775B2 (ja) * 1981-08-28 1985-01-23 富士通株式会社 モニタ機能付大規模集積回路及びその製造方法
US4801869A (en) * 1987-04-27 1989-01-31 International Business Machines Corporation Semiconductor defect monitor for diagnosing processing-induced defects
US5159752A (en) * 1989-03-22 1992-11-03 Texas Instruments Incorporated Scanning electron microscope based parametric testing method and apparatus
JPH0645439A (ja) * 1992-07-23 1994-02-18 Nec Corp 半導体装置
US5736863A (en) * 1996-06-19 1998-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures
US5723874A (en) * 1996-06-24 1998-03-03 International Business Machines Corporation Dishing and erosion monitor structure for damascene metal processing
US5781445A (en) * 1996-08-22 1998-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma damage monitor
US5959459A (en) * 1996-12-10 1999-09-28 International Business Machines Corporation Defect monitor and method for automated contactless inline wafer inspection
US6147361A (en) * 1997-02-07 2000-11-14 Taiwan Semiconductor Manufacturing Company Polysilicon electromigration sensor which can detect and monitor electromigration in composite metal lines on integrated circuit structures with improved sensitivity
US5900644A (en) * 1997-07-14 1999-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Test site and a method of monitoring via etch depths for semiconductor devices
US5952674A (en) * 1998-03-18 1999-09-14 International Business Machines Corporation Topography monitor
US6121156A (en) * 1998-04-28 2000-09-19 Cypress Semiconductor Corporation Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit
US6030732A (en) * 1999-01-07 2000-02-29 Taiwan Semiconductor Manufacturing Company In-situ etch process control monitor
JP2000294730A (ja) * 1999-04-09 2000-10-20 Mitsubishi Electric Corp システムlsiチップ及びその製造方法
JP2001077114A (ja) * 1999-09-03 2001-03-23 Seiko Epson Corp ダミーパターンの設計方法、ダミーパターンの設計装置、ダミーパターンを有する半導体装置及びその製造方法
US6834117B1 (en) * 1999-11-30 2004-12-21 Texas Instruments Incorporated X-ray defect detection in integrated circuit metallization
JP4307664B2 (ja) * 1999-12-03 2009-08-05 株式会社ルネサステクノロジ 半導体装置
US6771806B1 (en) * 1999-12-14 2004-08-03 Kla-Tencor Multi-pixel methods and apparatus for analysis of defect information from test structures on semiconductor devices
US6509197B1 (en) * 1999-12-14 2003-01-21 Kla-Tencor Corporation Inspectable buried test structures and methods for inspecting the same
US6362634B1 (en) * 2000-01-14 2002-03-26 Advanced Micro Devices, Inc. Integrated defect monitor structures for conductive features on a semiconductor topography and method of use
US6576923B2 (en) * 2000-04-18 2003-06-10 Kla-Tencor Corporation Inspectable buried test structures and methods for inspecting the same
US6787271B2 (en) * 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6808944B1 (en) * 2000-07-24 2004-10-26 Cypress Semiconductor Corporation Structure and method for monitoring a semiconductor process, and method of making such a structure
KR100363093B1 (ko) * 2000-07-28 2002-12-05 삼성전자 주식회사 반도체 소자의 층간 절연막 평탄화 방법
JP2002110809A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp ダミーパターンの設計方法およびそれを用いた半導体装置の製造方法
US6504225B1 (en) * 2001-04-18 2003-01-07 Advanced Micro Devices, Inc. Teos seaming scribe line monitor
JP3556647B2 (ja) * 2001-08-21 2004-08-18 沖電気工業株式会社 半導体素子の製造方法
JP2005533363A (ja) * 2001-09-28 2005-11-04 ピー・デイ・エフ ソリユーシヨンズ インコーポレイテツド 銅ダマシン技術におけるディッシングおよびエロージョン効果を評価するためのテスト構造
US6624031B2 (en) * 2001-11-20 2003-09-23 International Business Machines Corporation Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure
WO2003075190A1 (en) * 2002-02-28 2003-09-12 Pdf Solutions, Inc. Back end of line clone test vehicle
KR100476890B1 (ko) * 2002-04-11 2005-03-17 삼성전자주식회사 검사패턴 및 이를 이용한 화학적기계적 연마공정 제어방법
US6823496B2 (en) * 2002-04-23 2004-11-23 International Business Machines Corporation Physical design characterization system
US6623995B1 (en) * 2002-10-30 2003-09-23 Taiwan Semiconductor Manufacturing Company Optimized monitor method for a metal patterning process
US6774395B1 (en) * 2003-01-15 2004-08-10 Advanced Micro Devices, Inc. Apparatus and methods for characterizing floating body effects in SOI devices
US7507598B2 (en) * 2003-06-06 2009-03-24 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor fabrication method and structure
US7089522B2 (en) * 2003-06-11 2006-08-08 Chartered Semiconductor Manufacturing, Ltd. Device, design and method for a slot in a conductive area
US7135344B2 (en) * 2003-07-11 2006-11-14 Applied Materials, Israel, Ltd. Design-based monitoring
US6936920B2 (en) * 2003-08-29 2005-08-30 Lsi Logic Corporation Voltage contrast monitor for integrated circuit defects
US6998866B1 (en) * 2004-07-27 2006-02-14 International Business Machines Corporation Circuit and method for monitoring defects
US7194706B2 (en) * 2004-07-27 2007-03-20 International Business Machines Corporation Designing scan chains with specific parameter sensitivities to identify process defects
US7093213B2 (en) * 2004-08-13 2006-08-15 International Business Machines Corporation Method for designing an integrated circuit defect monitor
US7240322B2 (en) * 2005-04-04 2007-07-03 International Business Machines Corporation Method of adding fabrication monitors to integrated circuit chips

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6433561B1 (en) * 1999-12-14 2002-08-13 Kla-Tencor Corporation Methods and apparatus for optimizing semiconductor inspection tools
CN1459844A (zh) * 2002-04-17 2003-12-03 三星电子株式会社 使用低-k介电材料形成双大马士革互连的方法

Also Published As

Publication number Publication date
US20080017857A1 (en) 2008-01-24
TW200705229A (en) 2007-02-01
EP1869595A2 (en) 2007-12-26
US7240322B2 (en) 2007-07-03
CN101147148A (zh) 2008-03-19
JP2008535239A (ja) 2008-08-28
US20060225023A1 (en) 2006-10-05
US7323278B2 (en) 2008-01-29
WO2006107356A2 (en) 2006-10-12
US7620931B2 (en) 2009-11-17
JP5052501B2 (ja) 2012-10-17
WO2006107356A3 (en) 2007-11-22
TWI362598B (en) 2012-04-21
EP1869595B1 (en) 2013-08-07
EP1869595A4 (en) 2009-12-16
US20070160920A1 (en) 2007-07-12

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Termination date: 20161222