JP2022093260A - 半導体ユニットのテスト方法 - Google Patents
半導体ユニットのテスト方法 Download PDFInfo
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- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
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Abstract
Description
10 半導体ユニット
11 第1金属ボンディングパッド
13 第2金属ボンディングパッド
20 プローブカード
21 プローブ
40 第1フォトレジスト層
50 金属シード層
60 第2フォトレジスト層
70 銅柱層
RDL1、RDL2、RDL3、RDL4、RDL5、RDL6 回路再配線層
SUB 基板
S10、S20、S30、S101、S102、S103、S104、S105、S301、S302、S303 ステップ
via ビア
via1 第1ビア
via2 第2ビア
Claims (10)
- 半導体ユニットのテスト方法であって、
(1)テスト対象のチップ上に少なくとも1つの回路再配線層を作製し、
(2)前記回路再配線層を利用して、前記チップ上の半導体ユニットアレイをテストし、且つ、
(3)前記チップ上の前記回路再配線層を除去し、
前記半導体ユニットの長さは2μm~150μmであり、幅は2μm~150μmであることを特徴とするテスト方法。 - 前記半導体ユニットは、ミニLED、マイクロLED、ドライバIC又はRFID ICであることを特徴とする請求項1に記載のテスト方法。
- ステップ(2)では、
プローブカードで前記チップ上の半導体ユニットアレイをテストし、前記プローブカード上のテストプローブは、前記半導体ユニットに直接接触することなく、前記回路再配線層に接触してテストを行うことを特徴とする請求項1に記載のテスト方法。 - 前記半導体ユニットは複数の金属ボンディングパッドを有しており、且つ、前記プローブカード上のプローブの間隔は前記半導体ユニット上の金属ボンディングパッドの間隔よりも大きいことを特徴とする請求項3に記載のテスト方法。
- ステップ(1)では、
前記チップ上に第1フォトレジスト層を塗布し、
前記第1フォトレジスト層上に第1ビア開口を作製し、
前記チップの表面に金属シード層をめっきし、
前記金属シード層上に第2フォトレジスト層を塗布し、
第1ビアの上方に第2ビア開口を作製し、
露出した前記金属シード層上に銅柱層を電気めっきし、
前記第2フォトレジスト層を除去し、且つ
露出した前記金属シード層を除去することを特徴とする請求項1又は4に記載のテスト方法。 - 前記第1フォトレジスト層の厚みは1μm~30μmの間であり、
前記第1ビアの幅は0.5μm~40μmの間であり、深さは0.5μm~10μmの間であり、
前記金属シード層の厚みは0.02μm~3μmの間であり、
第2ビアの幅は0.5μm~200μmの間であり、深さは0.5μm~30μmの間であり、
前記銅柱層の厚みは0.5μm~25μmの間であることを特徴とする請求項5に記載のテスト方法。 - ステップ(3)では、
前記銅柱層を除去し、
前記金属シード層を除去し、且つ
前記第1フォトレジスト層を除去することを特徴とする請求項5に記載のテスト方法。 - 前記第1フォトレジスト層の材料は、ポリイミド、ジアゾナフトキノン、ポリオレフィン又は化学増幅フォトレジスト材料であり、且つ、金属シード層の材料は、銅、チタン、金又は銀のうちの1つであることを特徴とする請求項5に記載のテスト方法。
- 請求項3のテスト方法でテストを完了した半導体ユニットであって、
前記テストを完了した半導体ユニットにはプローブマークが存在しないことを特徴とする半導体ユニット。 - 請求項6のテスト方法でテストを完了した半導体ユニットであって、
前記テストを完了した半導体ユニットの表面は、前記金属シード層に関連する金属反応を測定可能であり、
且つ、前記テストを完了した半導体ユニットの表面は、前記第1フォトレジスト層に関連する材料反応を測定可能であることを特徴とする半導体ユニット。
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US11749572B2 (en) | 2020-05-19 | 2023-09-05 | Macronix International Co., Ltd. | Testing bonding pads for chiplet systems |
CN114624557A (zh) * | 2020-12-11 | 2022-06-14 | 高端电子有限公司 | 半导体组件的测试方法 |
US20230243885A1 (en) * | 2022-02-02 | 2023-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor testing device and method of operating the same |
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JPH1174167A (ja) * | 1997-08-29 | 1999-03-16 | Sharp Corp | 半導体素子の製造方法 |
JP2000196021A (ja) * | 1998-12-28 | 2000-07-14 | Fujitsu Ltd | ウエハ―レベルパッケ―ジ及びウエハ―レベルパッケ―ジを用いた半導体装置の製造方法 |
JP2003258047A (ja) * | 2002-03-06 | 2003-09-12 | Hitachi Ltd | 半導体素子の検査方法およびそのシステム |
JP2005303163A (ja) * | 2004-04-15 | 2005-10-27 | Nec Electronics Corp | バーンイン用ウェハ |
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US20060060845A1 (en) * | 2004-09-20 | 2006-03-23 | Narahari Ramanuja | Bond pad redistribution layer for thru semiconductor vias and probe touchdown |
US20070111340A1 (en) * | 2005-11-15 | 2007-05-17 | Credence Systems Corporation | Method for in-line testing of semiconductor wafers |
TWI410636B (zh) * | 2010-10-13 | 2013-10-01 | Adl Engineering Inc | 探針卡 |
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KR20140142032A (ko) * | 2013-06-03 | 2014-12-11 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
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- 2021-08-04 US US17/393,896 patent/US11756841B2/en active Active
- 2021-09-10 TW TW110133866A patent/TWI807415B/zh active
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US20220189834A1 (en) | 2022-06-16 |
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