JP2008532287A - 副チャンバアセンブリを備えるエッチング用チャンバ - Google Patents
副チャンバアセンブリを備えるエッチング用チャンバ Download PDFInfo
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- JP2008532287A JP2008532287A JP2007557101A JP2007557101A JP2008532287A JP 2008532287 A JP2008532287 A JP 2008532287A JP 2007557101 A JP2007557101 A JP 2007557101A JP 2007557101 A JP2007557101 A JP 2007557101A JP 2008532287 A JP2008532287 A JP 2008532287A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (19)
- 半導体ウエハ又はサンプルエッチングシステムであって、
その内部と外部との間で半導体ウエハ又はサンプルを通過させるローディングポートと、
第1容積を規定するとともに真空ポートを有する第1チャンバと、
前記第1チャンバの内部に配設され、前記ローディングポートを通された前記半導体ウエハ又はサンプルを支持するサンプルホルダと、
前記第1チャンバ内に設けられた副チャンバアセンブリとを備え、
前記副チャンバアセンブリが、
前記半導体ウエハ又はサンプルを前記サンプルホルダの上に載置可能な開口位置と、
前記第1チャンバと組み合わされて前記第1容積よりも小さな第2容積を規定する形態で、前記サンプルホルダと前記真空ポートとを含む第2チャンバを形成する閉鎖位置と、
の間で移動可能に構成されたエッチングシステム。 - 前記サンプルホルダに対して前記半導体ウエハ又はサンプルを昇降させる昇降手段を備えた請求項1に記載のエッチングシステム。
- 前記昇降手段が、
前記半導体ウエハ又はサンプルの昇降中に前記半導体ウエハ又はサンプルをエッジに沿って支持する手段、
前記半導体ウエハ又はサンプルを昇降する空気圧式又は油圧式昇降機構、
前記半導体ウエハ又はサンプルを昇降する電気アクチュエータ、
のうち、少なくとも1つを有する請求項2に記載のエッチングシステム。 - 前記副チャンバアセンブリに設けられ前記第2チャンバへエッチングガスを導入する入口であるエッチングポートと、
前記エッチングガスを前記エッチングガスポートに通過させる手段とを備えた請求項1に記載のエッチングシステム。 - 前記半導体ウエハ又はサンプルを前記サンプルホルダに対して保持する手段を備えた請求項1に記載のエッチングシステム。
- 前記半導体ウエハ又はサンプルが前記サンプルホルダの上にある時、前記半導体ウエハ又はサンプルと前記サンプルホルダとの間にガスを導入する手段を備えた請求項1に記載のエッチングシステム。
- 前記副チャンバアセンブリが前記閉鎖位置にある時に、前記副チャンバアセンブリと前記第1チャンバとの間に、ガスの漏れを防止する第1シールを備えた請求項1に記載のエッチングシステム。
- 前記副チャンバアセンブリと前記第1チャンバとの間にアダプタリングを備え、
前記副チャンバアセンブリが前記閉鎖位置にある時に、前記アダプタリングと前記第1チャンバとの間にガスの漏れを防止する第2シールを備えた請求項7に記載のエッチングシステム。 - 半導体ウエハ又はサンプルをエッチングする方法であって、
前記半導体ウエハ又はサンプルを第1チャンバのサンプルホルダの上に配置する工程と、
前記サンプルホルダの上の前記半導体ウエハ又はサンプルを、前記第1チャンバの内部に備えられた第2チャンバの中へ収納する工程と、
前記第2チャンバからガスを排出する工程と、
エッチングガスを前記第1チャンバに導入することなく、前記第2チャンバに導入する工程とを有する方法。 - 前記半導体ウエハ又はサンプルを前記サンプルホルダに固定する工程と、
前記半導体ウエハ又はサンプルと前記サンプルホルダとの間に熱伝導性ガスを導入する工程とを有する請求項9に記載の方法。 - 前記第1チャンバは、第1容積を規定し、
前記第2チャンバは、前記1容積と共延出する比較的小さな第2容積を規定する請求項9に記載の方法。 - 半導体ウエハ又はサンプルエッチングシステムであって、
第1チャンバと、
前記第1チャンバの内部に設けられたサンプルホルダと、
前記第1チャンバの内部に設けられた副チャンバアセンブリとを備え、
前記副チャンバアセンブリが、前記第1チャンバの内部に第2チャンバを規定するとともに、
前記半導体ウエハ又はサンプルを前記サンプルホルダに対して載置又は取外し可能にする第1位置と、
前記第2チャンバを前記半導体ウエハ又はサンプルを前記サンプルホルダに対して載置又は取外し不可能な形態で封止する第2位置と、
の間で移動可能に構成されたエッチングシステム。 - 前記サンプルホルダに対して前記半導体ウエハ又はサンプルを昇降させる昇降手段を備えた請求項12に記載のエッチングシステム。
- 前記昇降手段が、
前記半導体ウエハ又はサンプルの昇降中に前記半導体ウエハ又はサンプルをエッジに沿って支持する手段、
前記半導体ウエハ又はサンプルを昇降する空気圧式又は油圧式昇降機構、
前記半導体ウエハ又はサンプルを昇降する電気アクチュエータ、
のうち、少なくとも1つを有する請求項13に記載のエッチングシステム。 - エッチングガスを前記第1チャンバに導入することなく、前記第2チャンバに導入する手段を備えた請求項12に記載のエッチングシステム。
- 前記副チャンバアセンブリが前記第2位置にある時に、前記半導体ウエハ又は前記サンプルを前記サンプルホルダに対して固定する手段を備えた請求項12に記載のエッチングシステム。
- 前記半導体ウエハ又はサンプルが前記サンプルホルダの上にある時に、前記半導体ウエハ又はサンプルと前記サンプルホルダとの間にガスを導入する手段を備えた請求項12に記載のエッチングシステム。
- 前記副チャンバアセンブリが前記第2位置にある時に、前記副チャンバアセンブリと前記第1チャンバとの間にガスの漏れを防止するシールを少なくとも1つ備えた請求項12に記載のエッチングシステム。
- 前記副チャンバアセンブリと前記第1チャンバとの間にアダプタリングを備え、前記副チャンバアセンブリが前記第2位置にある時に、前記副チャンバアセンブリは前記アダプタリングと接触し、前記アダプタリングが前記第1チャンバと接触する請求項12に記載のエッチングシステム。
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US65509405P | 2005-02-22 | 2005-02-22 | |
US60/655,094 | 2005-02-22 | ||
PCT/US2006/006090 WO2006091588A2 (en) | 2005-02-22 | 2006-02-22 | Etching chamber with subchamber |
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JP2008532287A true JP2008532287A (ja) | 2008-08-14 |
JP5531284B2 JP5531284B2 (ja) | 2014-06-25 |
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US (1) | US9576824B2 (ja) |
EP (1) | EP1855794B1 (ja) |
JP (1) | JP5531284B2 (ja) |
KR (1) | KR101213390B1 (ja) |
CN (1) | CN101128622B (ja) |
WO (1) | WO2006091588A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014508417A (ja) * | 2011-03-01 | 2014-04-03 | アプライド マテリアルズ インコーポレイテッド | 基板搬送及びラジカル閉じ込めのための方法及び装置 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9494642B2 (en) * | 2009-11-30 | 2016-11-15 | Essai, Inc. | Systems and methods for conforming test tooling to integrated circuit device profiles with ejection mechanisms |
WO2012118897A2 (en) | 2011-03-01 | 2012-09-07 | Applied Materials, Inc. | Abatement and strip process chamber in a dual loadlock configuration |
US11171008B2 (en) | 2011-03-01 | 2021-11-09 | Applied Materials, Inc. | Abatement and strip process chamber in a dual load lock configuration |
CN104137248B (zh) | 2012-02-29 | 2017-03-22 | 应用材料公司 | 配置中的除污及剥除处理腔室 |
US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
CN110678973B (zh) | 2017-06-02 | 2023-09-19 | 应用材料公司 | 碳化硼硬掩模的干式剥除 |
US10234630B2 (en) | 2017-07-12 | 2019-03-19 | Applied Materials, Inc. | Method for creating a high refractive index wave guide |
US10269571B2 (en) | 2017-07-12 | 2019-04-23 | Applied Materials, Inc. | Methods for fabricating nanowire for semiconductor applications |
US10179941B1 (en) * | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
JP6947914B2 (ja) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧高温下のアニールチャンバ |
CN111095524B (zh) | 2017-09-12 | 2023-10-03 | 应用材料公司 | 用于使用保护阻挡物层制造半导体结构的设备和方法 |
US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
CN117936420A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
SG11202003438QA (en) | 2017-11-16 | 2020-05-28 | Applied Materials Inc | High pressure steam anneal processing apparatus |
JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧処理システムのためのコンデンサシステム |
KR102649241B1 (ko) | 2018-01-24 | 2024-03-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 어닐링을 사용한 심 힐링 |
KR20230079236A (ko) | 2018-03-09 | 2023-06-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
KR102528076B1 (ko) | 2018-10-30 | 2023-05-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 응용들을 위한 구조를 식각하기 위한 방법들 |
JP2022507390A (ja) | 2018-11-16 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | 強化拡散プロセスを使用する膜の堆積 |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
US11705375B2 (en) * | 2021-08-30 | 2023-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching apparatus and method |
CN113467199B (zh) * | 2021-09-06 | 2021-11-12 | 宁波润华全芯微电子设备有限公司 | 一种便于拆卸的防止反溅液体污染晶圆的装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966120A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 半導体製造装置 |
JPH08255784A (ja) * | 1995-03-17 | 1996-10-01 | Nec Corp | 真空処理装置および真空処理方法 |
JP2001250767A (ja) * | 2000-03-08 | 2001-09-14 | Tokyo Electron Ltd | 基板処理方法及びその装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61291032A (ja) * | 1985-06-17 | 1986-12-20 | Fujitsu Ltd | 真空装置 |
JPH0834205B2 (ja) * | 1986-11-21 | 1996-03-29 | 株式会社東芝 | ドライエツチング装置 |
US4842683A (en) * | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
US5002010A (en) * | 1989-10-18 | 1991-03-26 | Varian Associates, Inc. | Vacuum vessel |
JP3183575B2 (ja) * | 1992-09-03 | 2001-07-09 | 東京エレクトロン株式会社 | 処理装置および処理方法 |
US5730801A (en) * | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US5667592A (en) * | 1996-04-16 | 1997-09-16 | Gasonics International | Process chamber sleeve with ring seals for isolating individual process modules in a common cluster |
JP4317608B2 (ja) * | 1999-01-18 | 2009-08-19 | 東京エレクトロン株式会社 | 成膜装置 |
US7066703B2 (en) * | 1999-09-29 | 2006-06-27 | Tokyo Electron Limited | Chuck transport method and system |
AU4351601A (en) * | 2000-03-09 | 2001-09-17 | Semix Inc | Wafer processing apparatus and method |
JP4203206B2 (ja) * | 2000-03-24 | 2008-12-24 | 株式会社日立国際電気 | 基板処理装置 |
US6630053B2 (en) * | 2000-08-22 | 2003-10-07 | Asm Japan K.K. | Semiconductor processing module and apparatus |
JP4753224B2 (ja) | 2000-08-22 | 2011-08-24 | 日本エー・エス・エム株式会社 | ガスラインシステム |
US6887337B2 (en) * | 2000-09-19 | 2005-05-03 | Xactix, Inc. | Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto |
US6852167B2 (en) * | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US6899765B2 (en) * | 2002-03-29 | 2005-05-31 | Applied Materials Israel, Ltd. | Chamber elements defining a movable internal chamber |
US7682454B2 (en) * | 2003-08-07 | 2010-03-23 | Sundew Technologies, Llc | Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems |
-
2006
- 2006-02-22 JP JP2007557101A patent/JP5531284B2/ja active Active
- 2006-02-22 WO PCT/US2006/006090 patent/WO2006091588A2/en active Application Filing
- 2006-02-22 US US11/816,760 patent/US9576824B2/en active Active
- 2006-02-22 EP EP06735657A patent/EP1855794B1/en active Active
- 2006-02-22 KR KR1020077021719A patent/KR101213390B1/ko active IP Right Grant
- 2006-02-22 CN CN2006800060025A patent/CN101128622B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966120A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 半導体製造装置 |
JPH08255784A (ja) * | 1995-03-17 | 1996-10-01 | Nec Corp | 真空処理装置および真空処理方法 |
JP2001250767A (ja) * | 2000-03-08 | 2001-09-14 | Tokyo Electron Ltd | 基板処理方法及びその装置 |
Cited By (5)
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JP2014508417A (ja) * | 2011-03-01 | 2014-04-03 | アプライド マテリアルズ インコーポレイテッド | 基板搬送及びラジカル閉じ込めのための方法及び装置 |
US10090181B2 (en) | 2011-03-01 | 2018-10-02 | Applied Materials, Inc. | Method and apparatus for substrate transfer and radical confinement |
KR101904146B1 (ko) * | 2011-03-01 | 2018-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 이송 및 라디칼 구속을 위한 방법 및 장치 |
US10468282B2 (en) | 2011-03-01 | 2019-11-05 | Applied Materials, Inc. | Method and apparatus for substrate transfer and radical confinement |
US11574831B2 (en) | 2011-03-01 | 2023-02-07 | Applied Materials, Inc. | Method and apparatus for substrate transfer and radical confinement |
Also Published As
Publication number | Publication date |
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EP1855794A2 (en) | 2007-11-21 |
CN101128622B (zh) | 2010-08-25 |
CN101128622A (zh) | 2008-02-20 |
JP5531284B2 (ja) | 2014-06-25 |
US9576824B2 (en) | 2017-02-21 |
US20090233449A1 (en) | 2009-09-17 |
KR20080007219A (ko) | 2008-01-17 |
WO2006091588A2 (en) | 2006-08-31 |
WO2006091588A3 (en) | 2007-01-11 |
KR101213390B1 (ko) | 2012-12-18 |
EP1855794B1 (en) | 2012-10-31 |
EP1855794A4 (en) | 2010-10-20 |
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