JP2008527447A - エッチング後のフォトレジスト及び底部反射防止膜の除去に有用な組成物 - Google Patents
エッチング後のフォトレジスト及び底部反射防止膜の除去に有用な組成物 Download PDFInfo
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- JP2008527447A JP2008527447A JP2007550476A JP2007550476A JP2008527447A JP 2008527447 A JP2008527447 A JP 2008527447A JP 2007550476 A JP2007550476 A JP 2007550476A JP 2007550476 A JP2007550476 A JP 2007550476A JP 2008527447 A JP2008527447 A JP 2008527447A
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- Prior art keywords
- weight
- triazine
- composition
- deionized water
- formulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 40
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- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 32
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- -1 chloro- Chemical compound 0.000 claims description 15
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- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 claims description 10
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- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 6
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 5
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 5
- 229960004050 aminobenzoic acid Drugs 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 claims description 4
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 claims description 4
- DFUGJTBMQKRCPI-UHFFFAOYSA-N 2,4,6-trimethoxy-1,3,5-triazine Chemical compound COC1=NC(OC)=NC(OC)=N1 DFUGJTBMQKRCPI-UHFFFAOYSA-N 0.000 claims description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 4
- AFPHTEQTJZKQAQ-UHFFFAOYSA-N 3-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC([N+]([O-])=O)=C1 AFPHTEQTJZKQAQ-UHFFFAOYSA-N 0.000 claims description 4
- OTLNPYWUJOZPPA-UHFFFAOYSA-N 4-nitrobenzoic acid Chemical compound OC(=O)C1=CC=C([N+]([O-])=O)C=C1 OTLNPYWUJOZPPA-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 4
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims description 4
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 4
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- KCZIUKYAJJEIQG-UHFFFAOYSA-N 1,3,5-triazin-2-amine Chemical compound NC1=NC=NC=N1 KCZIUKYAJJEIQG-UHFFFAOYSA-N 0.000 claims description 3
- JIHQDMXYYFUGFV-UHFFFAOYSA-N 1,3,5-triazine Chemical compound C1=NC=NC=N1 JIHQDMXYYFUGFV-UHFFFAOYSA-N 0.000 claims description 3
- CJNZAXGUTKBIHP-UHFFFAOYSA-N 2-iodobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1I CJNZAXGUTKBIHP-UHFFFAOYSA-N 0.000 claims description 3
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- AJHPGXZOIAYYDW-UHFFFAOYSA-N 3-(2-cyanophenyl)-2-[(2-methylpropan-2-yl)oxycarbonylamino]propanoic acid Chemical compound CC(C)(C)OC(=O)NC(C(O)=O)CC1=CC=CC=C1C#N AJHPGXZOIAYYDW-UHFFFAOYSA-N 0.000 claims description 3
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- KCHLDNLIJVSRPK-UHFFFAOYSA-N 3-methylsulfanylaniline Chemical compound CSC1=CC=CC(N)=C1 KCHLDNLIJVSRPK-UHFFFAOYSA-N 0.000 claims description 3
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- HEMSJLNVJJUYEU-UHFFFAOYSA-N 6-ethoxy-2-n-methyl-1,3,5-triazine-2,4-diamine Chemical compound CCOC1=NC(N)=NC(NC)=N1 HEMSJLNVJJUYEU-UHFFFAOYSA-N 0.000 claims description 3
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 claims description 3
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/031,118 US20060154186A1 (en) | 2005-01-07 | 2005-01-07 | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
| PCT/US2006/000366 WO2006074316A1 (en) | 2005-01-07 | 2006-01-09 | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008527447A true JP2008527447A (ja) | 2008-07-24 |
| JP2008527447A5 JP2008527447A5 (https=) | 2009-03-05 |
Family
ID=36647826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007550476A Pending JP2008527447A (ja) | 2005-01-07 | 2006-01-09 | エッチング後のフォトレジスト及び底部反射防止膜の除去に有用な組成物 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20060154186A1 (https=) |
| EP (2) | EP1844367A4 (https=) |
| JP (1) | JP2008527447A (https=) |
| KR (1) | KR101365784B1 (https=) |
| CN (2) | CN101137939B (https=) |
| IL (1) | IL184483A0 (https=) |
| SG (1) | SG164385A1 (https=) |
| TW (1) | TWI426361B (https=) |
| WO (1) | WO2006074316A1 (https=) |
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| JP2019518986A (ja) * | 2016-05-23 | 2019-07-04 | フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド | 半導体基板からフォトレジストを除去するための剥離組成物 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011070057A (ja) * | 2009-09-28 | 2011-04-07 | Tosoh Corp | レジスト剥離剤及びそれを用いた剥離方法 |
| KR20170101271A (ko) * | 2014-12-30 | 2017-09-05 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 반도체 기판으로부터 포토레지스트를 제거하기 위한 스트리핑 조성물 |
| JP2018503127A (ja) * | 2014-12-30 | 2018-02-01 | フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド | 半導体基板からフォトレジストを除去するための剥離組成物 |
| KR102503357B1 (ko) * | 2014-12-30 | 2023-02-23 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 반도체 기판으로부터 포토레지스트를 제거하기 위한 스트리핑 조성물 |
| JP2019518986A (ja) * | 2016-05-23 | 2019-07-04 | フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド | 半導体基板からフォトレジストを除去するための剥離組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101137939A (zh) | 2008-03-05 |
| CN101137939B (zh) | 2014-09-03 |
| US20090215659A1 (en) | 2009-08-27 |
| TWI426361B (zh) | 2014-02-11 |
| EP2482134A2 (en) | 2012-08-01 |
| US7994108B2 (en) | 2011-08-09 |
| IL184483A0 (en) | 2007-10-31 |
| EP1844367A4 (en) | 2011-08-31 |
| SG164385A1 (en) | 2010-09-29 |
| WO2006074316A1 (en) | 2006-07-13 |
| CN104199261A (zh) | 2014-12-10 |
| KR101365784B1 (ko) | 2014-02-20 |
| KR20070099012A (ko) | 2007-10-08 |
| EP2482134A3 (en) | 2012-11-07 |
| TW200629012A (en) | 2006-08-16 |
| US20060154186A1 (en) | 2006-07-13 |
| EP1844367A1 (en) | 2007-10-17 |
| CN104199261B (zh) | 2019-07-09 |
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