SG164385A1 - Composition useful for removal of post-etch photoresist and bottom anti- reflection coatings - Google Patents

Composition useful for removal of post-etch photoresist and bottom anti- reflection coatings

Info

Publication number
SG164385A1
SG164385A1 SG201005348-6A SG2010053486A SG164385A1 SG 164385 A1 SG164385 A1 SG 164385A1 SG 2010053486 A SG2010053486 A SG 2010053486A SG 164385 A1 SG164385 A1 SG 164385A1
Authority
SG
Singapore
Prior art keywords
bottom anti
removal
post
composition useful
reflection coatings
Prior art date
Application number
SG201005348-6A
Other languages
English (en)
Inventor
David W Minsek
Weihua Wang
David D Bernhard
Thomas H Baum
Melissa K Rath
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of SG164385A1 publication Critical patent/SG164385A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG201005348-6A 2005-01-07 2006-01-09 Composition useful for removal of post-etch photoresist and bottom anti- reflection coatings SG164385A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/031,118 US20060154186A1 (en) 2005-01-07 2005-01-07 Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings

Publications (1)

Publication Number Publication Date
SG164385A1 true SG164385A1 (en) 2010-09-29

Family

ID=36647826

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201005348-6A SG164385A1 (en) 2005-01-07 2006-01-09 Composition useful for removal of post-etch photoresist and bottom anti- reflection coatings

Country Status (9)

Country Link
US (2) US20060154186A1 (https=)
EP (2) EP1844367A4 (https=)
JP (1) JP2008527447A (https=)
KR (1) KR101365784B1 (https=)
CN (2) CN101137939B (https=)
IL (1) IL184483A0 (https=)
SG (1) SG164385A1 (https=)
TW (1) TWI426361B (https=)
WO (1) WO2006074316A1 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
JP2008546036A (ja) 2005-06-07 2008-12-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属および誘電体相溶性の犠牲反射防止コーティング浄化および除去組成物
CN101233601A (zh) * 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
WO2007044446A1 (en) 2005-10-05 2007-04-19 Advanced Technology Materials, Inc. Oxidizing aqueous cleaner for the removal of post-etch residues
US8058219B2 (en) 2005-10-13 2011-11-15 Advanced Technology Materials, Inc. Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant
EP1946358A4 (en) * 2005-11-09 2009-03-04 Advanced Tech Materials COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS ON WHICH DIELECTRIC MATERIAL WITH LOW DIELECTRIC CONSTANT
TWI611047B (zh) * 2006-12-21 2018-01-11 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
TWI516573B (zh) * 2007-02-06 2016-01-11 安堤格里斯公司 選擇性移除ＴｉＳｉＮ之組成物及方法
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
JP4427562B2 (ja) * 2007-06-11 2010-03-10 株式会社東芝 パターン形成方法
US20100261632A1 (en) * 2007-08-02 2010-10-14 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
US8822396B2 (en) * 2007-08-22 2014-09-02 Daikin Industries, Ltd. Solution for removing residue after semiconductor dry process and method of removing the residue using the same
KR20110018775A (ko) * 2009-08-18 2011-02-24 삼성전자주식회사 컬러 필터 박리용 조성물 및 이를 이용한 컬러 필터 재생 방법
JP5321389B2 (ja) * 2009-09-28 2013-10-23 東ソー株式会社 レジスト剥離剤及びそれを用いた剥離方法
US8252673B2 (en) 2009-12-21 2012-08-28 International Business Machines Corporation Spin-on formulation and method for stripping an ion implanted photoresist
US9063431B2 (en) 2010-07-16 2015-06-23 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
EP2606158A4 (en) 2010-08-20 2017-04-26 Entegris Inc. Sustainable process for reclaiming precious metals and base metals from e-waste
WO2012048079A2 (en) 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
SG11201403556WA (en) 2011-12-28 2014-07-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
KR102105381B1 (ko) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법
WO2013173738A1 (en) 2012-05-18 2013-11-21 Advanced Technology Materials, Inc. Composition and process for stripping photoresist from a surface including titanium nitride
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
JP6363116B2 (ja) 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102338526B1 (ko) 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
KR102340516B1 (ko) 2013-08-30 2021-12-21 엔테그리스, 아이엔씨. 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
KR102352475B1 (ko) 2013-12-20 2022-01-18 엔테그리스, 아이엔씨. 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 Entegris, Inc. 化學機械研磨後配方及其使用方法
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
TWI546850B (zh) * 2014-11-14 2016-08-21 群創光電股份有限公司 顯示面板之製備方法
TWI690780B (zh) 2014-12-30 2020-04-11 美商富士軟片電子材料美國股份有限公司 用於自半導體基板去除光阻之剝離組成物
US10072237B2 (en) 2015-08-05 2018-09-11 Versum Materials Us, Llc Photoresist cleaning composition used in photolithography and a method for treating substrate therewith
IL292944B2 (en) * 2016-05-23 2023-06-01 Fujifilm Electronic Mat Usa Inc Cleaning products for removing the light-resistant materials from the substrate layers made of semiconductor
JP6951229B2 (ja) 2017-01-05 2021-10-20 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
WO2018128093A1 (ja) 2017-01-05 2018-07-12 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
KR20220005037A (ko) * 2019-04-24 2022-01-12 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 반도체 기판으로부터 포토레지스트를 제거하기 위한 박리 조성물
US20250002823A1 (en) * 2021-12-15 2025-01-02 Versum Materials Us, Llc Compositions For Removing Photoresist And Etch Residue From A Substrate With Copper Corrosion Inhibitor And Uses Thereof

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4744834A (en) * 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
DE3821231A1 (de) * 1987-06-25 1989-01-05 Siemens Ag Entschichterloesung fuer gehaertete positivlacke
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5468423A (en) * 1992-02-07 1995-11-21 The Clorox Company Reduced residue hard surface cleaner
US5390356A (en) * 1992-05-05 1995-02-14 The United States Of America As Represented By The Secretary Of The Navy Rapid reprogramming terminal
JP3315749B2 (ja) * 1993-02-24 2002-08-19 日立化成工業株式会社 水溶性レジストの剥離方法及び剥離液
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5419779A (en) * 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
JPH07247498A (ja) 1994-03-09 1995-09-26 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤及び配線パターンの形成方法
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
JP2950407B2 (ja) * 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
JP3953600B2 (ja) * 1997-10-28 2007-08-08 シャープ株式会社 レジスト膜剥離剤及びそれを用いた薄膜回路素子の製造方法
US7579308B2 (en) * 1998-07-06 2009-08-25 Ekc/Dupont Electronics Technologies Compositions and processes for photoresist stripping and residue removal in wafer level packaging
JP2001183850A (ja) * 1999-12-27 2001-07-06 Sumitomo Chem Co Ltd 剥離剤組成物
US6120978A (en) * 2000-01-06 2000-09-19 Air Products And Chemicals, Inc. Use of N,N-dialkyl ureas in photoresist developers
JP3339575B2 (ja) * 2000-01-25 2002-10-28 日本電気株式会社 剥離剤組成物および剥離方法
US6531436B1 (en) * 2000-02-25 2003-03-11 Shipley Company, L.L.C. Polymer removal
JP4821082B2 (ja) * 2000-03-21 2011-11-24 和光純薬工業株式会社 半導体基板洗浄剤及び洗浄方法
EP1138726B1 (en) * 2000-03-27 2005-01-12 Shipley Company LLC Polymer remover
JP2002072505A (ja) * 2000-08-29 2002-03-12 Nagase Kasei Kogyo Kk フォトレジスト剥離剤組成物およびその使用方法
US6375822B1 (en) * 2000-10-03 2002-04-23 Lev Taytsas Method for enhancing the solderability of a surface
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP2003005383A (ja) * 2000-11-30 2003-01-08 Tosoh Corp レジスト剥離剤
TW554258B (en) * 2000-11-30 2003-09-21 Tosoh Corp Resist stripper
US6927266B2 (en) * 2001-02-22 2005-08-09 Nissan Chemical Industries, Ltd. Bottom anti-reflective coat forming composition for lithography
TWI275903B (en) * 2001-03-13 2007-03-11 Nagase Chemtex Corp A composition for stripping photo resist
JP2003213463A (ja) * 2002-01-17 2003-07-30 Sumitomo Chem Co Ltd 金属腐食防止剤および洗浄液
JP3854523B2 (ja) * 2002-03-29 2006-12-06 メルテックス株式会社 レジスト剥離剤
CN100437922C (zh) * 2002-11-08 2008-11-26 和光纯药工业株式会社 洗涤液及使用该洗涤液的洗涤方法
US8236485B2 (en) * 2002-12-20 2012-08-07 Advanced Technology Materials, Inc. Photoresist removal
SG129274A1 (en) * 2003-02-19 2007-02-26 Mitsubishi Gas Chemical Co Cleaaning solution and cleaning process using the solution
SG150508A1 (en) * 2004-02-11 2009-03-30 Mallinckrodt Baker Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20060094613A1 (en) * 2004-10-29 2006-05-04 Lee Wai M Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US8058219B2 (en) * 2005-10-13 2011-11-15 Advanced Technology Materials, Inc. Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant

Also Published As

Publication number Publication date
CN101137939A (zh) 2008-03-05
CN101137939B (zh) 2014-09-03
US20090215659A1 (en) 2009-08-27
TWI426361B (zh) 2014-02-11
EP2482134A2 (en) 2012-08-01
US7994108B2 (en) 2011-08-09
IL184483A0 (en) 2007-10-31
EP1844367A4 (en) 2011-08-31
WO2006074316A1 (en) 2006-07-13
CN104199261A (zh) 2014-12-10
JP2008527447A (ja) 2008-07-24
KR101365784B1 (ko) 2014-02-20
KR20070099012A (ko) 2007-10-08
EP2482134A3 (en) 2012-11-07
TW200629012A (en) 2006-08-16
US20060154186A1 (en) 2006-07-13
EP1844367A1 (en) 2007-10-17
CN104199261B (zh) 2019-07-09

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