JP2008527447A5 - - Google Patents
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- JP2008527447A5 JP2008527447A5 JP2007550476A JP2007550476A JP2008527447A5 JP 2008527447 A5 JP2008527447 A5 JP 2008527447A5 JP 2007550476 A JP2007550476 A JP 2007550476A JP 2007550476 A JP2007550476 A JP 2007550476A JP 2008527447 A5 JP2008527447 A5 JP 2008527447A5
- Authority
- JP
- Japan
- Prior art keywords
- weight
- triazine
- group
- diamino
- substituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000203 mixture Substances 0.000 claims 26
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims 12
- 239000000463 material Substances 0.000 claims 11
- 239000008367 deionised water Substances 0.000 claims 10
- 229910021641 deionized water Inorganic materials 0.000 claims 10
- 238000009472 formulation Methods 0.000 claims 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 10
- -1 benzoic acid 2,4-diamino-6-methyl-1,3,5-triazine Chemical compound 0.000 claims 9
- 230000003196 chaotropic effect Effects 0.000 claims 9
- 238000000034 method Methods 0.000 claims 8
- 239000004202 carbamide Substances 0.000 claims 7
- 229920002120 photoresistant polymer Polymers 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims 7
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims 6
- NJYZCEFQAIUHSD-UHFFFAOYSA-N acetoguanamine Chemical compound CC1=NC(N)=NC(N)=N1 NJYZCEFQAIUHSD-UHFFFAOYSA-N 0.000 claims 6
- KUCWUAFNGCMZDB-UHFFFAOYSA-N 2-amino-3-nitrophenol Chemical class NC1=C(O)C=CC=C1[N+]([O-])=O KUCWUAFNGCMZDB-UHFFFAOYSA-N 0.000 claims 5
- 150000001447 alkali salts Chemical class 0.000 claims 5
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims 5
- 239000001257 hydrogen Substances 0.000 claims 5
- 229910052739 hydrogen Inorganic materials 0.000 claims 5
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims 5
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 4
- 150000000182 1,3,5-triazines Chemical class 0.000 claims 4
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical class C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims 4
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical group NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 claims 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims 4
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 claims 4
- 150000001448 anilines Chemical class 0.000 claims 4
- 125000000129 anionic group Chemical group 0.000 claims 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims 4
- 238000004377 microelectronic Methods 0.000 claims 4
- JIHQDMXYYFUGFV-UHFFFAOYSA-N 1,3,5-triazine Chemical compound C1=NC=NC=N1 JIHQDMXYYFUGFV-UHFFFAOYSA-N 0.000 claims 3
- OXFSTTJBVAAALW-UHFFFAOYSA-N 1,3-dihydroimidazole-2-thione Chemical class SC1=NC=CN1 OXFSTTJBVAAALW-UHFFFAOYSA-N 0.000 claims 3
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical class [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims 3
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical class NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 claims 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 3
- 239000012736 aqueous medium Substances 0.000 claims 3
- 239000013626 chemical specie Substances 0.000 claims 3
- 150000002431 hydrogen Chemical class 0.000 claims 3
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 claims 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims 2
- AFPHTEQTJZKQAQ-UHFFFAOYSA-N 3-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC([N+]([O-])=O)=C1 AFPHTEQTJZKQAQ-UHFFFAOYSA-N 0.000 claims 2
- OTLNPYWUJOZPPA-UHFFFAOYSA-N 4-nitrobenzoic acid Chemical compound OC(=O)C1=CC=C([N+]([O-])=O)C=C1 OTLNPYWUJOZPPA-UHFFFAOYSA-N 0.000 claims 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims 2
- 229960004050 aminobenzoic acid Drugs 0.000 claims 2
- 150000001558 benzoic acid derivatives Chemical class 0.000 claims 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims 2
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 claims 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical group NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims 2
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 claims 1
- KCZIUKYAJJEIQG-UHFFFAOYSA-N 1,3,5-triazin-2-amine Chemical compound NC1=NC=NC=N1 KCZIUKYAJJEIQG-UHFFFAOYSA-N 0.000 claims 1
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 claims 1
- 125000003363 1,3,5-triazinyl group Chemical group N1=C(N=CN=C1)* 0.000 claims 1
- DFUGJTBMQKRCPI-UHFFFAOYSA-N 2,4,6-trimethoxy-1,3,5-triazine Chemical compound COC1=NC(OC)=NC(OC)=N1 DFUGJTBMQKRCPI-UHFFFAOYSA-N 0.000 claims 1
- CJNZAXGUTKBIHP-UHFFFAOYSA-N 2-iodobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1I CJNZAXGUTKBIHP-UHFFFAOYSA-N 0.000 claims 1
- BHJWUUSAMQADIT-UHFFFAOYSA-N 2-methylbenzenecarbothioic s-acid Chemical compound CC1=CC=CC=C1C(O)=S BHJWUUSAMQADIT-UHFFFAOYSA-N 0.000 claims 1
- WBRPQQSADOCKCH-UHFFFAOYSA-N 2-methylsulfanylaniline Chemical compound CSC1=CC=CC=C1N WBRPQQSADOCKCH-UHFFFAOYSA-N 0.000 claims 1
- SLAMLWHELXOEJZ-UHFFFAOYSA-N 2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1[N+]([O-])=O SLAMLWHELXOEJZ-UHFFFAOYSA-N 0.000 claims 1
- AJHPGXZOIAYYDW-UHFFFAOYSA-N 3-(2-cyanophenyl)-2-[(2-methylpropan-2-yl)oxycarbonylamino]propanoic acid Chemical compound CC(C)(C)OC(=O)NC(C(O)=O)CC1=CC=CC=C1C#N AJHPGXZOIAYYDW-UHFFFAOYSA-N 0.000 claims 1
- XHQZJYCNDZAGLW-UHFFFAOYSA-N 3-methoxybenzoic acid Chemical compound COC1=CC=CC(C(O)=O)=C1 XHQZJYCNDZAGLW-UHFFFAOYSA-N 0.000 claims 1
- KUUBHOLGHXMYGR-UHFFFAOYSA-N 3-methylbenzenecarbothioic s-acid Chemical compound CC1=CC=CC(C(O)=S)=C1 KUUBHOLGHXMYGR-UHFFFAOYSA-N 0.000 claims 1
- KCHLDNLIJVSRPK-UHFFFAOYSA-N 3-methylsulfanylaniline Chemical compound CSC1=CC=CC(N)=C1 KCHLDNLIJVSRPK-UHFFFAOYSA-N 0.000 claims 1
- YKFROQCFVXOUPW-UHFFFAOYSA-N 4-(methylthio) aniline Chemical compound CSC1=CC=C(N)C=C1 YKFROQCFVXOUPW-UHFFFAOYSA-N 0.000 claims 1
- BBYDXOIZLAWGSL-UHFFFAOYSA-N 4-fluorobenzoic acid Chemical compound OC(=O)C1=CC=C(F)C=C1 BBYDXOIZLAWGSL-UHFFFAOYSA-N 0.000 claims 1
- ZEYHEAKUIGZSGI-UHFFFAOYSA-N 4-methoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C=C1 ZEYHEAKUIGZSGI-UHFFFAOYSA-N 0.000 claims 1
- PJHWTWHVCOZCPU-UHFFFAOYSA-N 4-methylbenzenecarbothioic s-acid Chemical compound CC1=CC=C(C(O)=S)C=C1 PJHWTWHVCOZCPU-UHFFFAOYSA-N 0.000 claims 1
- HEMSJLNVJJUYEU-UHFFFAOYSA-N 6-ethoxy-2-n-methyl-1,3,5-triazine-2,4-diamine Chemical compound CCOC1=NC(N)=NC(NC)=N1 HEMSJLNVJJUYEU-UHFFFAOYSA-N 0.000 claims 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 claims 1
- ROHAEUVBFQHNSG-UHFFFAOYSA-N I.[O-][N+]([O-])=O Chemical class I.[O-][N+]([O-])=O ROHAEUVBFQHNSG-UHFFFAOYSA-N 0.000 claims 1
- 229920000877 Melamine resin Polymers 0.000 claims 1
- 229910002651 NO3 Inorganic materials 0.000 claims 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims 1
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 claims 1
- 239000006117 anti-reflective coating Substances 0.000 claims 1
- 150000001649 bromium compounds Chemical class 0.000 claims 1
- 239000003153 chemical reaction reagent Substances 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 150000004694 iodide salts Chemical class 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- NCBZRJODKRCREW-UHFFFAOYSA-N m-anisidine Chemical compound COC1=CC=CC(N)=C1 NCBZRJODKRCREW-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 150000002823 nitrates Chemical class 0.000 claims 1
- VMPITZXILSNTON-UHFFFAOYSA-N o-anisidine Chemical compound COC1=CC=CC=C1N VMPITZXILSNTON-UHFFFAOYSA-N 0.000 claims 1
- BHAAPTBBJKJZER-UHFFFAOYSA-N p-anisidine Chemical compound COC1=CC=C(N)C=C1 BHAAPTBBJKJZER-UHFFFAOYSA-N 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical class C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/031,118 US20060154186A1 (en) | 2005-01-07 | 2005-01-07 | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
| PCT/US2006/000366 WO2006074316A1 (en) | 2005-01-07 | 2006-01-09 | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008527447A JP2008527447A (ja) | 2008-07-24 |
| JP2008527447A5 true JP2008527447A5 (https=) | 2009-03-05 |
Family
ID=36647826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007550476A Pending JP2008527447A (ja) | 2005-01-07 | 2006-01-09 | エッチング後のフォトレジスト及び底部反射防止膜の除去に有用な組成物 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20060154186A1 (https=) |
| EP (2) | EP1844367A4 (https=) |
| JP (1) | JP2008527447A (https=) |
| KR (1) | KR101365784B1 (https=) |
| CN (2) | CN101137939B (https=) |
| IL (1) | IL184483A0 (https=) |
| SG (1) | SG164385A1 (https=) |
| TW (1) | TWI426361B (https=) |
| WO (1) | WO2006074316A1 (https=) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060154186A1 (en) * | 2005-01-07 | 2006-07-13 | Advanced Technology Materials, Inc. | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
| JP2008546036A (ja) | 2005-06-07 | 2008-12-18 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 金属および誘電体相溶性の犠牲反射防止コーティング浄化および除去組成物 |
| CN101233601A (zh) * | 2005-06-13 | 2008-07-30 | 高级技术材料公司 | 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法 |
| WO2007044446A1 (en) | 2005-10-05 | 2007-04-19 | Advanced Technology Materials, Inc. | Oxidizing aqueous cleaner for the removal of post-etch residues |
| US8058219B2 (en) | 2005-10-13 | 2011-11-15 | Advanced Technology Materials, Inc. | Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant |
| EP1946358A4 (en) * | 2005-11-09 | 2009-03-04 | Advanced Tech Materials | COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS ON WHICH DIELECTRIC MATERIAL WITH LOW DIELECTRIC CONSTANT |
| TWI611047B (zh) * | 2006-12-21 | 2018-01-11 | 恩特葛瑞斯股份有限公司 | 用以移除蝕刻後殘餘物之液體清洗劑 |
| TWI516573B (zh) * | 2007-02-06 | 2016-01-11 | 安堤格里斯公司 | 選擇性移除ＴｉＳｉＮ之組成物及方法 |
| US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
| JP4427562B2 (ja) * | 2007-06-11 | 2010-03-10 | 株式会社東芝 | パターン形成方法 |
| US20100261632A1 (en) * | 2007-08-02 | 2010-10-14 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of residue from a microelectronic device |
| US8822396B2 (en) * | 2007-08-22 | 2014-09-02 | Daikin Industries, Ltd. | Solution for removing residue after semiconductor dry process and method of removing the residue using the same |
| KR20110018775A (ko) * | 2009-08-18 | 2011-02-24 | 삼성전자주식회사 | 컬러 필터 박리용 조성물 및 이를 이용한 컬러 필터 재생 방법 |
| JP5321389B2 (ja) * | 2009-09-28 | 2013-10-23 | 東ソー株式会社 | レジスト剥離剤及びそれを用いた剥離方法 |
| US8252673B2 (en) | 2009-12-21 | 2012-08-28 | International Business Machines Corporation | Spin-on formulation and method for stripping an ion implanted photoresist |
| US9063431B2 (en) | 2010-07-16 | 2015-06-23 | Advanced Technology Materials, Inc. | Aqueous cleaner for the removal of post-etch residues |
| JP6101421B2 (ja) | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | 銅または銅合金用エッチング液 |
| EP2606158A4 (en) | 2010-08-20 | 2017-04-26 | Entegris Inc. | Sustainable process for reclaiming precious metals and base metals from e-waste |
| WO2012048079A2 (en) | 2010-10-06 | 2012-04-12 | Advanced Technology Materials, Inc. | Composition and process for selectively etching metal nitrides |
| JP5933950B2 (ja) | 2011-09-30 | 2016-06-15 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 銅または銅合金用エッチング液 |
| SG11201403556WA (en) | 2011-12-28 | 2014-07-30 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
| KR102105381B1 (ko) | 2012-02-15 | 2020-04-29 | 엔테그리스, 아이엔씨. | 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법 |
| WO2013173738A1 (en) | 2012-05-18 | 2013-11-21 | Advanced Technology Materials, Inc. | Composition and process for stripping photoresist from a surface including titanium nitride |
| KR102118964B1 (ko) | 2012-12-05 | 2020-06-08 | 엔테그리스, 아이엔씨. | Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법 |
| JP6363116B2 (ja) | 2013-03-04 | 2018-07-25 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
| KR102338550B1 (ko) | 2013-06-06 | 2021-12-14 | 엔테그리스, 아이엔씨. | 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법 |
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| TWI654340B (zh) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法 |
| KR102352475B1 (ko) | 2013-12-20 | 2022-01-18 | 엔테그리스, 아이엔씨. | 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도 |
| US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
| TWI659098B (zh) | 2014-01-29 | 2019-05-11 | Entegris, Inc. | 化學機械研磨後配方及其使用方法 |
| US11127587B2 (en) | 2014-02-05 | 2021-09-21 | Entegris, Inc. | Non-amine post-CMP compositions and method of use |
| TWI546850B (zh) * | 2014-11-14 | 2016-08-21 | 群創光電股份有限公司 | 顯示面板之製備方法 |
| TWI690780B (zh) | 2014-12-30 | 2020-04-11 | 美商富士軟片電子材料美國股份有限公司 | 用於自半導體基板去除光阻之剝離組成物 |
| US10072237B2 (en) | 2015-08-05 | 2018-09-11 | Versum Materials Us, Llc | Photoresist cleaning composition used in photolithography and a method for treating substrate therewith |
| IL292944B2 (en) * | 2016-05-23 | 2023-06-01 | Fujifilm Electronic Mat Usa Inc | Cleaning products for removing the light-resistant materials from the substrate layers made of semiconductor |
| JP6951229B2 (ja) | 2017-01-05 | 2021-10-20 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄装置および基板洗浄方法 |
| WO2018128093A1 (ja) | 2017-01-05 | 2018-07-12 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄装置および基板洗浄方法 |
| KR20220005037A (ko) * | 2019-04-24 | 2022-01-12 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 반도체 기판으로부터 포토레지스트를 제거하기 위한 박리 조성물 |
| US20250002823A1 (en) * | 2021-12-15 | 2025-01-02 | Versum Materials Us, Llc | Compositions For Removing Photoresist And Etch Residue From A Substrate With Copper Corrosion Inhibitor And Uses Thereof |
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-
2005
- 2005-01-07 US US11/031,118 patent/US20060154186A1/en not_active Abandoned
-
2006
- 2006-01-09 SG SG201005348-6A patent/SG164385A1/en unknown
- 2006-01-09 TW TW095100721A patent/TWI426361B/zh not_active IP Right Cessation
- 2006-01-09 EP EP06717549A patent/EP1844367A4/en not_active Withdrawn
- 2006-01-09 CN CN200680007314.8A patent/CN101137939B/zh not_active Expired - Lifetime
- 2006-01-09 KR KR1020077017990A patent/KR101365784B1/ko not_active Expired - Lifetime
- 2006-01-09 WO PCT/US2006/000366 patent/WO2006074316A1/en not_active Ceased
- 2006-01-09 EP EP12157762A patent/EP2482134A3/en not_active Withdrawn
- 2006-01-09 US US11/813,497 patent/US7994108B2/en not_active Expired - Lifetime
- 2006-01-09 JP JP2007550476A patent/JP2008527447A/ja active Pending
- 2006-01-09 CN CN201410384014.8A patent/CN104199261B/zh not_active Expired - Lifetime
-
2007
- 2007-07-08 IL IL184483A patent/IL184483A0/en unknown
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