JP2008186920A5 - - Google Patents
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- Publication number
- JP2008186920A5 JP2008186920A5 JP2007017913A JP2007017913A JP2008186920A5 JP 2008186920 A5 JP2008186920 A5 JP 2008186920A5 JP 2007017913 A JP2007017913 A JP 2007017913A JP 2007017913 A JP2007017913 A JP 2007017913A JP 2008186920 A5 JP2008186920 A5 JP 2008186920A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- cathode
- anode
- substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 17
- 239000012535 impurity Substances 0.000 claims 16
- 239000004065 semiconductor Substances 0.000 claims 16
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007017913A JP5196794B2 (ja) | 2007-01-29 | 2007-01-29 | 半導体装置 |
| US11/776,913 US7755167B2 (en) | 2007-01-29 | 2007-07-12 | Semiconductor device including switching element and two diodes |
| DE200710039624 DE102007039624A1 (de) | 2007-01-29 | 2007-08-22 | Halbleitervorrichtung mit Schaltelement und zwei Dioden |
| KR1020070096321A KR100941105B1 (ko) | 2007-01-29 | 2007-09-21 | 스위칭 소자와 2개의 다이오드를 구비한 반도체 장치 |
| CN2007101629044A CN101236964B (zh) | 2007-01-29 | 2007-09-27 | 具有开关元件和两个二极管的半导体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007017913A JP5196794B2 (ja) | 2007-01-29 | 2007-01-29 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008186920A JP2008186920A (ja) | 2008-08-14 |
| JP2008186920A5 true JP2008186920A5 (enExample) | 2009-07-30 |
| JP5196794B2 JP5196794B2 (ja) | 2013-05-15 |
Family
ID=39587449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007017913A Expired - Fee Related JP5196794B2 (ja) | 2007-01-29 | 2007-01-29 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7755167B2 (enExample) |
| JP (1) | JP5196794B2 (enExample) |
| KR (1) | KR100941105B1 (enExample) |
| CN (1) | CN101236964B (enExample) |
| DE (1) | DE102007039624A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5539134B2 (ja) * | 2010-09-16 | 2014-07-02 | 三菱電機株式会社 | 半導体装置 |
| KR101301387B1 (ko) * | 2011-09-16 | 2013-08-28 | 삼성전기주식회사 | 전력 반도체 모듈 |
| CN106067799B (zh) * | 2016-06-13 | 2019-03-05 | 南京芯舟科技有限公司 | 一种半导体器件 |
| JP2019161495A (ja) * | 2018-03-14 | 2019-09-19 | 富士電機株式会社 | 半導体装置および装置 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548958A (en) * | 1978-10-02 | 1980-04-08 | Nec Corp | Semiconductor device |
| JPS6269564A (ja) * | 1985-09-20 | 1987-03-30 | Nec Corp | 半導体装置 |
| JPS62108578A (ja) * | 1985-11-06 | 1987-05-19 | Rohm Co Ltd | 半導体装置 |
| JPS62210858A (ja) | 1986-03-10 | 1987-09-16 | Mitsubishi Electric Corp | 複合ダイオ−ド |
| EP0314465B1 (en) * | 1987-10-27 | 1998-05-06 | Nec Corporation | Semiconductor device with an isolated vertical power MOSFET. |
| JP3032745B2 (ja) * | 1992-09-04 | 2000-04-17 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
| JP3193827B2 (ja) * | 1994-04-28 | 2001-07-30 | 三菱電機株式会社 | 半導体パワーモジュールおよび電力変換装置 |
| JPH09181335A (ja) * | 1995-12-25 | 1997-07-11 | Rohm Co Ltd | 半導体装置 |
| FR2773265B1 (fr) * | 1997-12-30 | 2000-03-10 | Sgs Thomson Microelectronics | Circuit de protection d'interface d'abonnes |
| JP2001111398A (ja) * | 1999-10-13 | 2001-04-20 | Fuji Electric Co Ltd | 半導体双方向スイッチ用スパイク電圧抑制回路 |
| JP2002142443A (ja) * | 2000-11-01 | 2002-05-17 | Fuji Electric Co Ltd | 電力用半導体素子駆動用ｉｃの保護回路 |
| JP4761644B2 (ja) | 2001-04-18 | 2011-08-31 | 三菱電機株式会社 | 半導体装置 |
| US6657256B2 (en) | 2001-05-22 | 2003-12-02 | General Semiconductor, Inc. | Trench DMOS transistor having a zener diode for protection from electro-static discharge |
| JP2003033044A (ja) | 2001-07-09 | 2003-01-31 | Mitsubishi Electric Corp | スナバ回路 |
| US6803732B2 (en) * | 2001-12-20 | 2004-10-12 | Osram Opto Semiconductors Gmbh | LED array and LED module with chains of LEDs connected in parallel |
| JP2005057235A (ja) * | 2003-07-24 | 2005-03-03 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路 |
| DE10334079B4 (de) | 2003-07-25 | 2008-08-21 | Siemens Ag | Transistormodul |
| JP4799829B2 (ja) * | 2003-08-27 | 2011-10-26 | 三菱電機株式会社 | 絶縁ゲート型トランジスタ及びインバータ回路 |
| JP4506276B2 (ja) | 2004-05-17 | 2010-07-21 | 富士電機システムズ株式会社 | 自己消弧形半導体素子の駆動回路 |
| US7297603B2 (en) * | 2005-03-31 | 2007-11-20 | Semiconductor Components Industries, L.L.C. | Bi-directional transistor and method therefor |
| JP5034461B2 (ja) * | 2006-01-10 | 2012-09-26 | 株式会社デンソー | 半導体装置 |
| JP5033335B2 (ja) * | 2006-02-21 | 2012-09-26 | ルネサスエレクトロニクス株式会社 | 半導体装置およびそれを用いたインバータ装置 |
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2007
- 2007-01-29 JP JP2007017913A patent/JP5196794B2/ja not_active Expired - Fee Related
- 2007-07-12 US US11/776,913 patent/US7755167B2/en not_active Expired - Fee Related
- 2007-08-22 DE DE200710039624 patent/DE102007039624A1/de not_active Withdrawn
- 2007-09-21 KR KR1020070096321A patent/KR100941105B1/ko not_active Expired - Fee Related
- 2007-09-27 CN CN2007101629044A patent/CN101236964B/zh not_active Expired - Fee Related