JP2008159947A - 成膜装置および成膜方法 - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
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Abstract
【解決手段】 内部が減圧空間とされる処理容器と、前記減圧空間に成膜ガスを供給するガス供給手段と、カーボンを主成分とする材料により構成され、前記減圧空間に被処理基板を保持する基板保持部と、前記処理容器の外側に設置される、前記基板保持部を誘導加熱するコイルと、前記基板保持部を覆うと共に、前記処理容器から離間させて設置される断熱材と、を有し、前記減圧空間は、前記成膜ガスが供給される成膜ガス供給空間と、前記基板保持部と前記処理容器との間に画成される断熱空間とに分離され、前記断熱空間に冷却媒体が介在されるように構成されていることを特徴とする成膜装置。
【選択図】 図4
Description
請求項1に記載したように、
内部が減圧空間とされる処理容器と、
前記減圧空間に成膜ガスを供給するガス供給手段と、
カーボンを主成分とする材料により構成され、前記減圧空間に被処理基板を保持する基板保持部と、
前記処理容器の外側に設置される、前記基板保持部を誘導加熱するコイルと、
前記基板保持部を覆うと共に、前記処理容器から離間されて設置される断熱材と、を有し、
前記減圧空間は、前記成膜ガスが供給される成膜ガス供給空間と、前記基板保持部と前記処理容器との間に画成される断熱空間とに分離され、
前記断熱空間に冷却媒体が介在されるように構成されていることを特徴とする成膜装置により、また、
請求項2に記載したように、
前記断熱材はカーボンを主成分として構成され、該断熱材が多孔状に形成される部分を含むことで、該断熱材と前記基板保持部との熱伝導率が異なるように構成されていることを特徴とする請求項1記載の成膜装置により、また、
請求項3に記載したように、
前記断熱材の表面には、カーボン系のコーティング膜が形成されていることを特徴とする請求項2記載の成膜装置により、また、
請求項4に記載したように、
前記処理容器は、石英により構成されていることを特徴とする請求項1乃至3のいずれか1項記載の成膜装置により、また、
請求項5に記載したように、
前記基板保持部は、複数の前記被処理基板を保持可能な被加熱載置台と、該被加熱載置台の周囲に形成される被加熱構造体とを有し、該被加熱構造体には、対向する2つの開口部が形成され、一方の開口部から前記成膜ガスが供給され、他方の開口部から当該成膜ガスが排出されることを特徴とする請求項1乃至4のいずれか1項記載の成膜装置により、また、
請求項6に記載したように、
前記被加熱載置台は、複数の前記被処理基板が載置された搬送板を保持すると共に、該搬送板を所定の回転軸を中心として回転するように構成されていることを特徴とする請求項5記載の成膜装置により、また、
請求項7に記載したように、
前記処理容器は、搬送手段を内部に有する搬送室に接続され、当該搬送手段により、前記搬送板が前記被加熱載置台上に搬出入されることを特徴とする請求項6記載の成膜装置により、また、
請求項8に記載したように、
前記断熱材を覆う断熱材保持構造体をさらに有することを特徴とする請求項1乃至7のいずれか1項記載の成膜装置により、また、
請求項9に記載したように、
前記被処理基板上には、前記成膜ガスを用いたエピタキシャル成長が行われることを特徴とする請求項1乃至8のいずれか1項記載の成膜装置により、また、
請求項10に記載したように、
請求項1乃至8のいずれか1項記載の成膜装置を用い、エピタキシャル成長を行うことにより前記被処理基板上に成膜を行う成膜方法であって、
円盤状の搬送板に、複数の前記被処理基板を載置する工程と、
複数の前記被処理基板が前記搬送板に載置された状態で、搬送手段により前記搬送板を被加熱載置台上に搬送する工程と、
前記被加熱載置台を所定速度で回転させる工程と、
前記成膜ガス供給空間に前記成膜ガスを供給する工程と、
前記コイルにより前記基板保持部を加熱する工程と、
前記搬送手段により複数の前記被処理基板が載置された前記搬送板を前記処理容器から搬出する工程と、を有することを特徴とする成膜方法により、また、
請求項11に記載したように、
前記断熱空間に前記処理容器を冷却する冷却媒体を供給する工程をさらに有することを特徴とする請求項10記載の成膜方法により、また、
請求項12に記載したように、
前記エピタキシャル成長を行う工程では、前記被処理基板上にSiとCを主成分とする膜が形成されることを特徴とする請求項10または11記載の成膜方法により、また、
請求項13に記載したように、
前記成膜ガスは、CxHy(x、yは整数)により示されるガスを含むことを特徴とする請求項10乃至12のいずれか1項記載の成膜方法により、また、
請求項14に記載したように、
前記エピタキシャル成長を行う工程では、前記被処理基板が1200℃以上となるように前記基板保持部が誘導加熱されることを特徴とする請求項10乃至13のいずれか1項記載の成膜方法により、解決する。
101A 減圧空間
101B 処理容器
101C ガス供給手段
101a 成膜ガス供給空間
101b 断熱空間
102 基板保持部
103 載置台
104 被加熱構造体
105 断熱材
106 断熱材保持構造体
107 コイル
108 軸部
109 稼働手段
110 搬送板
111 圧力計
112 排気ライン
113 圧力調整手段
114 排気手段
120 制御手段
121 CPU
122 記憶媒体
123 入力部
124 メモリ
125 通信部
126 表示部
130,130A,130B,130C,130D,130E,130F,130G,134 ガスライン
131A,131B,131C,131D,131E,131F,131G,135 MFC
132A,132B,132C,132D,132E,132F,132G,136 バルブ
133A,133B,133C,133D,133F,133F,133G,137 ガス供給源
Claims (14)
- 内部が減圧空間とされる処理容器と、
前記減圧空間に成膜ガスを供給するガス供給手段と、
カーボンを主成分とする材料により構成され、前記減圧空間に被処理基板を保持する基板保持部と、
前記処理容器の外側に設置される、前記基板保持部を誘導加熱するコイルと、
前記基板保持部を覆うと共に、前記処理容器から離間されて設置される断熱材と、を有し、
前記減圧空間は、前記成膜ガスが供給される成膜ガス供給空間と、前記基板保持部と前記処理容器との間に画成される断熱空間とに分離され、
前記断熱空間に冷却媒体が介在されるように構成されていることを特徴とする成膜装置。 - 前記断熱材はカーボンを主成分として構成され、該断熱材が多孔状に形成される部分を含むことで、該断熱材と前記基板保持部との熱伝導率が異なるように構成されていることを特徴とする請求項1記載の成膜装置。
- 前記断熱材の表面には、カーボン系のコーティング膜が形成されていることを特徴とする請求項2記載の成膜装置。
- 前記処理容器は、石英により構成されていることを特徴とする請求項1乃至3のいずれか1項記載の成膜装置。
- 前記基板保持部は、複数の前記被処理基板を保持可能な被加熱載置台と、該被加熱載置台の周囲に形成される被加熱構造体とを有し、該被加熱構造体には、対向する2つの開口部が形成され、一方の開口部から前記成膜ガスが供給され、他方の開口部から当該成膜ガスが排出されることを特徴とする請求項1乃至4のいずれか1項記載の成膜装置。
- 前記被加熱載置台は、複数の前記被処理基板が載置された搬送板を保持すると共に、該搬送板を所定の回転軸を中心として回転するように構成されていることを特徴とする請求項5記載の成膜装置。
- 前記処理容器は、搬送手段を内部に有する搬送室に接続され、当該搬送手段により、前記搬送板が前記被加熱載置台上に搬出入されることを特徴とする請求項6記載の成膜装置。
- 前記断熱材を覆う断熱材保持構造体をさらに有することを特徴とする請求項1乃至7のいずれか1項記載の成膜装置。
- 前記被処理基板上には、前記成膜ガスを用いたエピタキシャル成長が行われることを特徴とする請求項1乃至8のいずれか1項記載の成膜装置。
- 請求項1乃至8のいずれか1項記載の成膜装置を用い、エピタキシャル成長を行うことにより前記被処理基板上に成膜を行う成膜方法であって、
円盤状の搬送板に、複数の前記被処理基板を載置する工程と、
複数の前記被処理基板が前記搬送板に載置された状態で、搬送手段により前記搬送板を被加熱載置台上に搬送する工程と、
前記被加熱載置台を所定速度で回転させる工程と、
前記成膜ガス供給空間に前記成膜ガスを供給する工程と、
前記コイルにより前記基板保持部を加熱する工程と、
前記搬送手段により複数の前記被処理基板が載置された前記搬送板を前記処理容器から搬出する工程と、を有することを特徴とする成膜方法。 - 前記断熱空間に前記処理容器を冷却する冷却媒体を供給する工程をさらに有することを特徴とする請求項10記載の成膜方法。
- 前記エピタキシャル成長を行う工程では、前記被処理基板上にSiとCを主成分とする膜が形成されることを特徴とする請求項10または11記載の成膜方法。
- 前記成膜ガスは、CxHy(x、yは整数)により示されるガスを含むことを特徴とする請求項10乃至12のいずれか1項記載の成膜方法。
- 前記エピタキシャル成長を行う工程では、前記被処理基板が1200℃以上となるように前記基板保持部が誘導加熱されることを特徴とする請求項10乃至13のいずれか1項記載の成膜方法。
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JP2003166059A (ja) * | 2001-11-29 | 2003-06-13 | Kyocera Corp | 成膜装置及び成膜方法 |
JP2004035971A (ja) * | 2002-07-05 | 2004-02-05 | Ulvac Japan Ltd | 薄膜製造装置 |
JP2006513559A (ja) * | 2002-12-10 | 2006-04-20 | イー・テイ・シー・エピタキシヤル・テクノロジー・センター・エス・アール・エル | サセプタ・システム |
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JP2011003885A (ja) * | 2009-05-19 | 2011-01-06 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、基板処理装置及び基板の製造方法 |
KR101916226B1 (ko) * | 2011-12-29 | 2018-11-08 | 엘지이노텍 주식회사 | 증착 장치 및 증착 방법 |
WO2014203613A1 (ja) | 2013-06-17 | 2014-12-24 | 東京エレクトロン株式会社 | 化合物半導体膜成膜用基板の移載装置および移載方法、ならびに化合物半導体膜の成膜システムおよび成膜方法 |
KR20160021247A (ko) | 2013-06-17 | 2016-02-24 | 도쿄엘렉트론가부시키가이샤 | 화합물 반도체막 성막용 기판의 전달 장치 및 전달 방법, 및 화합물 반도체막의 성막 시스템 및 성막 방법 |
WO2015098283A1 (ja) * | 2013-12-24 | 2015-07-02 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造装置およびSiCエピタキシャルウェハの製造方法 |
JP2015122443A (ja) * | 2013-12-24 | 2015-07-02 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造装置およびSiCエピタキシャルウェハの製造方法 |
US10494737B2 (en) | 2013-12-24 | 2019-12-03 | Showa Denko K.K. | Apparatus for producing SiC epitaxial wafer and method for producing SiC epitaxial wafer |
WO2015114896A1 (ja) * | 2014-01-28 | 2015-08-06 | 東京エレクトロン株式会社 | 成膜装置およびそれに用いる基板ホルダー |
US10550491B2 (en) | 2014-11-21 | 2020-02-04 | Tokyo Electron Limited | Film-forming apparatus |
Also Published As
Publication number | Publication date |
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WO2008078503A1 (ja) | 2008-07-03 |
US8696814B2 (en) | 2014-04-15 |
EP2099063B1 (en) | 2018-03-07 |
TWI424475B (zh) | 2014-01-21 |
TW200842948A (en) | 2008-11-01 |
KR101211897B1 (ko) | 2012-12-13 |
US20100092666A1 (en) | 2010-04-15 |
EP2099063A1 (en) | 2009-09-09 |
KR20120023854A (ko) | 2012-03-13 |
CN101568993A (zh) | 2009-10-28 |
CN101568993B (zh) | 2010-12-22 |
JP5051875B2 (ja) | 2012-10-17 |
EP2099063A4 (en) | 2013-07-03 |
KR20090089876A (ko) | 2009-08-24 |
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