JPS6483599A - Apparatus for vapor growth of crystal - Google Patents

Apparatus for vapor growth of crystal

Info

Publication number
JPS6483599A
JPS6483599A JP23745187A JP23745187A JPS6483599A JP S6483599 A JPS6483599 A JP S6483599A JP 23745187 A JP23745187 A JP 23745187A JP 23745187 A JP23745187 A JP 23745187A JP S6483599 A JPS6483599 A JP S6483599A
Authority
JP
Japan
Prior art keywords
susceptor
outer periphery
downstream side
skirt part
barrel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23745187A
Other languages
Japanese (ja)
Inventor
Kouichi Koukado
Shigeo Murai
Hiroya Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP23745187A priority Critical patent/JPS6483599A/en
Publication of JPS6483599A publication Critical patent/JPS6483599A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To enable mass production of homogeneous thin film crystals with uniform film thickness and dope concentration in good yield, by additionally providing a skirt part of almost extended outer periphery of a barrel-type susceptor on the downstream side of the susceptor of the titled apparatus. CONSTITUTION:A skirt part 9 having the diameter gradually reduced to the end is provided on the downstream side of a barrel-type susceptor 2, placed in the center of a cylindrical vessel 1, made of quartz and having a cooling jacket 7 on the outer periphery and high-frequency heating coil 8 on the outside thereof and mounted with many crystal substrates 4 is provided on the downstream side of the susceptor 2 and a hemispherical head part 10 almost continuous in the outer periphery of the susceptor, as necessary, is additionally provided on the upstream side of the susceptor to constitute the titled apparatus. A raw material gas is then introduced from a raw material gas feed port 5 attached to the tip of the cylindrical vessel 1 to stabilize the gas flow through the head part 10 and skirt part 9 and discharge the gas from discharge ports 3 and grow highly homogeneous thin film crystals on the many crystal substrates 4.
JP23745187A 1987-09-24 1987-09-24 Apparatus for vapor growth of crystal Pending JPS6483599A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23745187A JPS6483599A (en) 1987-09-24 1987-09-24 Apparatus for vapor growth of crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23745187A JPS6483599A (en) 1987-09-24 1987-09-24 Apparatus for vapor growth of crystal

Publications (1)

Publication Number Publication Date
JPS6483599A true JPS6483599A (en) 1989-03-29

Family

ID=17015538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23745187A Pending JPS6483599A (en) 1987-09-24 1987-09-24 Apparatus for vapor growth of crystal

Country Status (1)

Country Link
JP (1) JPS6483599A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655773A1 (en) * 1989-12-08 1991-06-14 Thomson Composants Microondes Device for supporting wafers in a vertical epitaxy reactor
US20100092666A1 (en) * 2006-12-25 2010-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655773A1 (en) * 1989-12-08 1991-06-14 Thomson Composants Microondes Device for supporting wafers in a vertical epitaxy reactor
US20100092666A1 (en) * 2006-12-25 2010-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method
US8696814B2 (en) * 2006-12-25 2014-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method

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