JPS6483599A - Apparatus for vapor growth of crystal - Google Patents
Apparatus for vapor growth of crystalInfo
- Publication number
- JPS6483599A JPS6483599A JP23745187A JP23745187A JPS6483599A JP S6483599 A JPS6483599 A JP S6483599A JP 23745187 A JP23745187 A JP 23745187A JP 23745187 A JP23745187 A JP 23745187A JP S6483599 A JPS6483599 A JP S6483599A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- outer periphery
- downstream side
- skirt part
- barrel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To enable mass production of homogeneous thin film crystals with uniform film thickness and dope concentration in good yield, by additionally providing a skirt part of almost extended outer periphery of a barrel-type susceptor on the downstream side of the susceptor of the titled apparatus. CONSTITUTION:A skirt part 9 having the diameter gradually reduced to the end is provided on the downstream side of a barrel-type susceptor 2, placed in the center of a cylindrical vessel 1, made of quartz and having a cooling jacket 7 on the outer periphery and high-frequency heating coil 8 on the outside thereof and mounted with many crystal substrates 4 is provided on the downstream side of the susceptor 2 and a hemispherical head part 10 almost continuous in the outer periphery of the susceptor, as necessary, is additionally provided on the upstream side of the susceptor to constitute the titled apparatus. A raw material gas is then introduced from a raw material gas feed port 5 attached to the tip of the cylindrical vessel 1 to stabilize the gas flow through the head part 10 and skirt part 9 and discharge the gas from discharge ports 3 and grow highly homogeneous thin film crystals on the many crystal substrates 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23745187A JPS6483599A (en) | 1987-09-24 | 1987-09-24 | Apparatus for vapor growth of crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23745187A JPS6483599A (en) | 1987-09-24 | 1987-09-24 | Apparatus for vapor growth of crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6483599A true JPS6483599A (en) | 1989-03-29 |
Family
ID=17015538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23745187A Pending JPS6483599A (en) | 1987-09-24 | 1987-09-24 | Apparatus for vapor growth of crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6483599A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2655773A1 (en) * | 1989-12-08 | 1991-06-14 | Thomson Composants Microondes | Device for supporting wafers in a vertical epitaxy reactor |
US20100092666A1 (en) * | 2006-12-25 | 2010-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
-
1987
- 1987-09-24 JP JP23745187A patent/JPS6483599A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2655773A1 (en) * | 1989-12-08 | 1991-06-14 | Thomson Composants Microondes | Device for supporting wafers in a vertical epitaxy reactor |
US20100092666A1 (en) * | 2006-12-25 | 2010-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
US8696814B2 (en) * | 2006-12-25 | 2014-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
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