JP2008047772A - 絶縁ゲート型バイポーラトランジスタ - Google Patents

絶縁ゲート型バイポーラトランジスタ Download PDF

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Publication number
JP2008047772A
JP2008047772A JP2006223443A JP2006223443A JP2008047772A JP 2008047772 A JP2008047772 A JP 2008047772A JP 2006223443 A JP2006223443 A JP 2006223443A JP 2006223443 A JP2006223443 A JP 2006223443A JP 2008047772 A JP2008047772 A JP 2008047772A
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JP
Japan
Prior art keywords
semiconductor region
region
semiconductor
type base
insulated gate
Prior art date
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Pending
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JP2006223443A
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English (en)
Japanese (ja)
Inventor
Yoshinobu Kono
好伸 河野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2006223443A priority Critical patent/JP2008047772A/ja
Priority to TW096120053A priority patent/TWI346387B/zh
Priority to CNB2007101275177A priority patent/CN100536162C/zh
Publication of JP2008047772A publication Critical patent/JP2008047772A/ja
Pending legal-status Critical Current

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JP2006223443A 2006-08-18 2006-08-18 絶縁ゲート型バイポーラトランジスタ Pending JP2008047772A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006223443A JP2008047772A (ja) 2006-08-18 2006-08-18 絶縁ゲート型バイポーラトランジスタ
TW096120053A TWI346387B (en) 2006-08-18 2007-06-05 Insulated gate bipolar transistor
CNB2007101275177A CN100536162C (zh) 2006-08-18 2007-06-28 绝缘栅型双极晶体管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006223443A JP2008047772A (ja) 2006-08-18 2006-08-18 絶縁ゲート型バイポーラトランジスタ

Publications (1)

Publication Number Publication Date
JP2008047772A true JP2008047772A (ja) 2008-02-28

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ID=39095339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006223443A Pending JP2008047772A (ja) 2006-08-18 2006-08-18 絶縁ゲート型バイポーラトランジスタ

Country Status (3)

Country Link
JP (1) JP2008047772A (zh)
CN (1) CN100536162C (zh)
TW (1) TWI346387B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012244049A (ja) * 2011-05-23 2012-12-10 Sanken Electric Co Ltd 半導体装置
JPWO2013031212A1 (ja) * 2011-08-29 2015-03-23 富士電機株式会社 双方向素子、双方向素子回路および電力変換装置
WO2018225571A1 (ja) * 2017-06-09 2018-12-13 富士電機株式会社 半導体装置および半導体装置の製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101275458B1 (ko) * 2011-12-26 2013-06-17 삼성전기주식회사 반도체 소자 및 그 제조 방법
CN103681813B (zh) * 2012-09-02 2018-07-24 朱江 一种背沟槽结构绝缘栅双极晶体管及其制备方法
CN103872110B (zh) * 2012-12-07 2018-03-30 中国科学院微电子研究所 逆导型igbt的背面结构及其制备方法
CN104253152A (zh) * 2013-06-28 2014-12-31 无锡华润上华半导体有限公司 一种igbt及其制造方法
CN104299990A (zh) * 2013-07-19 2015-01-21 无锡华润上华半导体有限公司 绝缘栅双极晶体管及其制造方法
JP5821925B2 (ja) * 2013-10-21 2015-11-24 トヨタ自動車株式会社 バイポーラトランジスタ
CN110676314B (zh) * 2019-10-23 2021-05-04 广东美的白色家电技术创新中心有限公司 一种绝缘栅双极型晶体管、功率模块及生活电器
CN117558751A (zh) * 2022-08-04 2024-02-13 无锡华润上华科技有限公司 场截止型绝缘栅双极晶体管及其制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03155677A (ja) * 1989-08-19 1991-07-03 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP2003249654A (ja) * 2002-02-26 2003-09-05 Shindengen Electric Mfg Co Ltd 半導体装置およびその製造方法
JP2004363477A (ja) * 2003-06-06 2004-12-24 Sanken Electric Co Ltd 絶縁ゲート型半導体装置
JP2005057028A (ja) * 2003-08-04 2005-03-03 Sanken Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03155677A (ja) * 1989-08-19 1991-07-03 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP2003249654A (ja) * 2002-02-26 2003-09-05 Shindengen Electric Mfg Co Ltd 半導体装置およびその製造方法
JP2004363477A (ja) * 2003-06-06 2004-12-24 Sanken Electric Co Ltd 絶縁ゲート型半導体装置
JP2005057028A (ja) * 2003-08-04 2005-03-03 Sanken Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012244049A (ja) * 2011-05-23 2012-12-10 Sanken Electric Co Ltd 半導体装置
JPWO2013031212A1 (ja) * 2011-08-29 2015-03-23 富士電機株式会社 双方向素子、双方向素子回路および電力変換装置
US9478645B2 (en) 2011-08-29 2016-10-25 Fuji Electric Co., Ltd. Bidirectional device, bidirectional device circuit and power conversion apparatus
WO2018225571A1 (ja) * 2017-06-09 2018-12-13 富士電機株式会社 半導体装置および半導体装置の製造方法
CN110100314A (zh) * 2017-06-09 2019-08-06 富士电机株式会社 半导体装置及半导体装置的制造方法
JPWO2018225571A1 (ja) * 2017-06-09 2019-11-07 富士電機株式会社 半導体装置および半導体装置の製造方法
US10672762B2 (en) 2017-06-09 2020-06-02 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
TW200812080A (en) 2008-03-01
TWI346387B (en) 2011-08-01
CN101127365A (zh) 2008-02-20
CN100536162C (zh) 2009-09-02

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