TWI346387B - Insulated gate bipolar transistor - Google Patents

Insulated gate bipolar transistor

Info

Publication number
TWI346387B
TWI346387B TW096120053A TW96120053A TWI346387B TW I346387 B TWI346387 B TW I346387B TW 096120053 A TW096120053 A TW 096120053A TW 96120053 A TW96120053 A TW 96120053A TW I346387 B TWI346387 B TW I346387B
Authority
TW
Taiwan
Prior art keywords
bipolar transistor
insulated gate
gate bipolar
insulated
transistor
Prior art date
Application number
TW096120053A
Other languages
English (en)
Other versions
TW200812080A (en
Inventor
Yoshinobu Kono
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Publication of TW200812080A publication Critical patent/TW200812080A/zh
Application granted granted Critical
Publication of TWI346387B publication Critical patent/TWI346387B/zh

Links

TW096120053A 2006-08-18 2007-06-05 Insulated gate bipolar transistor TWI346387B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006223443A JP2008047772A (ja) 2006-08-18 2006-08-18 絶縁ゲート型バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
TW200812080A TW200812080A (en) 2008-03-01
TWI346387B true TWI346387B (en) 2011-08-01

Family

ID=39095339

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096120053A TWI346387B (en) 2006-08-18 2007-06-05 Insulated gate bipolar transistor

Country Status (3)

Country Link
JP (1) JP2008047772A (zh)
CN (1) CN100536162C (zh)
TW (1) TWI346387B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012244049A (ja) * 2011-05-23 2012-12-10 Sanken Electric Co Ltd 半導体装置
WO2013031212A1 (ja) 2011-08-29 2013-03-07 次世代パワーデバイス技術研究組合 双方向素子、双方向素子回路および電力変換装置
KR101275458B1 (ko) * 2011-12-26 2013-06-17 삼성전기주식회사 반도체 소자 및 그 제조 방법
CN103681813B (zh) * 2012-09-02 2018-07-24 朱江 一种背沟槽结构绝缘栅双极晶体管及其制备方法
CN103872110B (zh) * 2012-12-07 2018-03-30 中国科学院微电子研究所 逆导型igbt的背面结构及其制备方法
CN104253152A (zh) * 2013-06-28 2014-12-31 无锡华润上华半导体有限公司 一种igbt及其制造方法
CN104299990A (zh) * 2013-07-19 2015-01-21 无锡华润上华半导体有限公司 绝缘栅双极晶体管及其制造方法
JP5821925B2 (ja) * 2013-10-21 2015-11-24 トヨタ自動車株式会社 バイポーラトランジスタ
JP6904416B2 (ja) * 2017-06-09 2021-07-14 富士電機株式会社 半導体装置および半導体装置の製造方法
CN110676314B (zh) * 2019-10-23 2021-05-04 广东美的白色家电技术创新中心有限公司 一种绝缘栅双极型晶体管、功率模块及生活电器
CN117558751A (zh) * 2022-08-04 2024-02-13 无锡华润上华科技有限公司 场截止型绝缘栅双极晶体管及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03155677A (ja) * 1989-08-19 1991-07-03 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP3907174B2 (ja) * 2002-02-26 2007-04-18 新電元工業株式会社 半導体装置
JP4577480B2 (ja) * 2003-06-06 2010-11-10 サンケン電気株式会社 絶縁ゲート型半導体装置
JP2005057028A (ja) * 2003-08-04 2005-03-03 Sanken Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ

Also Published As

Publication number Publication date
TW200812080A (en) 2008-03-01
JP2008047772A (ja) 2008-02-28
CN101127365A (zh) 2008-02-20
CN100536162C (zh) 2009-09-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees