JP2008047620A - プラズマ処理方法、及び、プラズマ処理装置 - Google Patents

プラズマ処理方法、及び、プラズマ処理装置 Download PDF

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Publication number
JP2008047620A
JP2008047620A JP2006219839A JP2006219839A JP2008047620A JP 2008047620 A JP2008047620 A JP 2008047620A JP 2006219839 A JP2006219839 A JP 2006219839A JP 2006219839 A JP2006219839 A JP 2006219839A JP 2008047620 A JP2008047620 A JP 2008047620A
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JP
Japan
Prior art keywords
plasma processing
processing method
silicon nitride
plasma
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006219839A
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English (en)
Japanese (ja)
Inventor
Tadashi Shimazu
正 嶋津
Masahiko Inoue
雅彦 井上
Toshihiko Nishimori
年彦 西森
Yuichi Kono
雄一 河野
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Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP2006219839A priority Critical patent/JP2008047620A/ja
Priority to US12/373,146 priority patent/US7972946B2/en
Priority to PCT/JP2007/064500 priority patent/WO2008018291A1/ja
Priority to KR1020087031919A priority patent/KR101081783B1/ko
Priority to EP07791225A priority patent/EP2051290A4/en
Priority to TW096127583A priority patent/TW200822220A/zh
Publication of JP2008047620A publication Critical patent/JP2008047620A/ja
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006219839A 2006-08-11 2006-08-11 プラズマ処理方法、及び、プラズマ処理装置 Withdrawn JP2008047620A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006219839A JP2008047620A (ja) 2006-08-11 2006-08-11 プラズマ処理方法、及び、プラズマ処理装置
US12/373,146 US7972946B2 (en) 2006-08-11 2007-07-24 Plasma treatment method and plasma treatment device
PCT/JP2007/064500 WO2008018291A1 (fr) 2006-08-11 2007-07-24 Procédé de traitement par plasma et appareil de traitement par plasma
KR1020087031919A KR101081783B1 (ko) 2006-08-11 2007-07-24 플라즈마 처리 방법 및 플라즈마 처리 장치
EP07791225A EP2051290A4 (en) 2006-08-11 2007-07-24 PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE
TW096127583A TW200822220A (en) 2006-08-11 2007-07-27 Plasma processing method and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006219839A JP2008047620A (ja) 2006-08-11 2006-08-11 プラズマ処理方法、及び、プラズマ処理装置

Publications (1)

Publication Number Publication Date
JP2008047620A true JP2008047620A (ja) 2008-02-28

Family

ID=39032825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006219839A Withdrawn JP2008047620A (ja) 2006-08-11 2006-08-11 プラズマ処理方法、及び、プラズマ処理装置

Country Status (6)

Country Link
US (1) US7972946B2 (https=)
EP (1) EP2051290A4 (https=)
JP (1) JP2008047620A (https=)
KR (1) KR101081783B1 (https=)
TW (1) TW200822220A (https=)
WO (1) WO2008018291A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018190986A (ja) * 2017-05-11 2018-11-29 エーエスエム アイピー ホールディング ビー．ブイ． トレンチの側壁又は平坦面上に選択的に窒化ケイ素膜を形成する方法
KR20200060473A (ko) 2017-10-10 2020-05-29 도쿄엘렉트론가부시키가이샤 성막 방법
JP2020529736A (ja) * 2017-08-04 2020-10-08 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 水平表面上におけるＳｉＮの選択的堆積
JP7057041B1 (ja) * 2021-12-08 2022-04-19 株式会社京都セミコンダクター 窒化珪素膜の形成方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5297048B2 (ja) * 2008-01-28 2013-09-25 三菱重工業株式会社 プラズマ処理方法及びプラズマ処理装置
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
US8742665B2 (en) * 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
KR101096909B1 (ko) * 2009-12-04 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 형성방법
JP5495940B2 (ja) * 2010-05-21 2014-05-21 三菱重工業株式会社 半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置
KR101223724B1 (ko) 2010-10-25 2013-01-17 삼성디스플레이 주식회사 전자소자용 보호막 및 그 제조 방법
JP2015179700A (ja) * 2014-03-18 2015-10-08 キヤノン株式会社 固体撮像素子の製造方法
CN113517170B (zh) * 2021-07-09 2024-02-09 长鑫存储技术有限公司 半导体结构的制造方法、半导体结构与存储器

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JPH0635323B2 (ja) * 1982-06-25 1994-05-11 株式会社日立製作所 表面処理方法
JPS6130040A (ja) * 1984-07-20 1986-02-12 Anelva Corp 薄膜作成装置
JPH07111261A (ja) * 1993-08-16 1995-04-25 Canon Sales Co Inc 成膜装置及び成膜方法
US5620523A (en) 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
TW584902B (en) 2000-06-19 2004-04-21 Applied Materials Inc Method of plasma processing silicon nitride using argon, nitrogen and silane gases
JP3725100B2 (ja) 2002-07-31 2005-12-07 アプライド マテリアルズ インコーポレイテッド 成膜方法
US20050215005A1 (en) * 2003-03-06 2005-09-29 Lsi Logic Corporation Capacitor with stoichiometrically adjusted dielectric and method of fabricating same
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US20060105106A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Tensile and compressive stressed materials for semiconductors

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018190986A (ja) * 2017-05-11 2018-11-29 エーエスエム アイピー ホールディング ビー．ブイ． トレンチの側壁又は平坦面上に選択的に窒化ケイ素膜を形成する方法
JP7233173B2 (ja) 2017-05-11 2023-03-06 エーエスエム アイピー ホールディング ビー．ブイ． トレンチの側壁又は平坦面上に選択的に窒化ケイ素膜を形成する方法
JP2020529736A (ja) * 2017-08-04 2020-10-08 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 水平表面上におけるＳｉＮの選択的堆積
JP7344867B2 (ja) 2017-08-04 2023-09-14 ラム リサーチ コーポレーション 水平表面上におけるＳｉＮの選択的堆積
KR20200060473A (ko) 2017-10-10 2020-05-29 도쿄엘렉트론가부시키가이샤 성막 방법
JP7057041B1 (ja) * 2021-12-08 2022-04-19 株式会社京都セミコンダクター 窒化珪素膜の形成方法
WO2023105680A1 (ja) * 2021-12-08 2023-06-15 株式会社京都セミコンダクター 窒化珪素膜の形成方法

Also Published As

Publication number Publication date
TW200822220A (en) 2008-05-16
EP2051290A1 (en) 2009-04-22
KR20090015158A (ko) 2009-02-11
US7972946B2 (en) 2011-07-05
TWI358088B (https=) 2012-02-11
KR101081783B1 (ko) 2011-11-09
WO2008018291A1 (fr) 2008-02-14
EP2051290A4 (en) 2010-04-21
US20090176380A1 (en) 2009-07-09

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