TW200822220A - Plasma processing method and plasma processing apparatus - Google Patents

Plasma processing method and plasma processing apparatus Download PDF

Info

Publication number
TW200822220A
TW200822220A TW096127583A TW96127583A TW200822220A TW 200822220 A TW200822220 A TW 200822220A TW 096127583 A TW096127583 A TW 096127583A TW 96127583 A TW96127583 A TW 96127583A TW 200822220 A TW200822220 A TW 200822220A
Authority
TW
Taiwan
Prior art keywords
film
plasma processing
plasma
processing method
nitride film
Prior art date
Application number
TW096127583A
Other languages
English (en)
Chinese (zh)
Other versions
TWI358088B (https=
Inventor
Tadashi Shimazu
Masahiko Inoue
Toshihiko Nishimori
Yuichi Kawano
Original Assignee
Mitsubishi Heavy Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Ind Ltd filed Critical Mitsubishi Heavy Ind Ltd
Publication of TW200822220A publication Critical patent/TW200822220A/zh
Application granted granted Critical
Publication of TWI358088B publication Critical patent/TWI358088B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
TW096127583A 2006-08-11 2007-07-27 Plasma processing method and plasma processing apparatus TW200822220A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006219839A JP2008047620A (ja) 2006-08-11 2006-08-11 プラズマ処理方法、及び、プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200822220A true TW200822220A (en) 2008-05-16
TWI358088B TWI358088B (https=) 2012-02-11

Family

ID=39032825

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096127583A TW200822220A (en) 2006-08-11 2007-07-27 Plasma processing method and plasma processing apparatus

Country Status (6)

Country Link
US (1) US7972946B2 (https=)
EP (1) EP2051290A4 (https=)
JP (1) JP2008047620A (https=)
KR (1) KR101081783B1 (https=)
TW (1) TW200822220A (https=)
WO (1) WO2008018291A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5297048B2 (ja) * 2008-01-28 2013-09-25 三菱重工業株式会社 プラズマ処理方法及びプラズマ処理装置
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
US8742665B2 (en) * 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
KR101096909B1 (ko) * 2009-12-04 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 형성방법
JP5495940B2 (ja) * 2010-05-21 2014-05-21 三菱重工業株式会社 半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置
KR101223724B1 (ko) 2010-10-25 2013-01-17 삼성디스플레이 주식회사 전자소자용 보호막 및 그 제조 방법
JP2015179700A (ja) * 2014-03-18 2015-10-08 キヤノン株式会社 固体撮像素子の製造方法
TWI766014B (zh) * 2017-05-11 2022-06-01 荷蘭商Ａｓｍ智慧財產控股公司 在溝槽的側壁或平坦表面上選擇性地形成氮化矽膜之方法
WO2019028136A1 (en) * 2017-08-04 2019-02-07 Lam Research Corporation SELECTIVE DEPOSITION OF SILICON NITRIDE ON HORIZONTAL SURFACES
JP7018288B2 (ja) 2017-10-10 2022-02-10 東京エレクトロン株式会社 成膜方法
CN113517170B (zh) * 2021-07-09 2024-02-09 长鑫存储技术有限公司 半导体结构的制造方法、半导体结构与存储器
JP7057041B1 (ja) * 2021-12-08 2022-04-19 株式会社京都セミコンダクター 窒化珪素膜の形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0635323B2 (ja) * 1982-06-25 1994-05-11 株式会社日立製作所 表面処理方法
JPS6130040A (ja) * 1984-07-20 1986-02-12 Anelva Corp 薄膜作成装置
JPH07111261A (ja) * 1993-08-16 1995-04-25 Canon Sales Co Inc 成膜装置及び成膜方法
US5620523A (en) 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
TW584902B (en) 2000-06-19 2004-04-21 Applied Materials Inc Method of plasma processing silicon nitride using argon, nitrogen and silane gases
JP3725100B2 (ja) 2002-07-31 2005-12-07 アプライド マテリアルズ インコーポレイテッド 成膜方法
US20050215005A1 (en) * 2003-03-06 2005-09-29 Lsi Logic Corporation Capacitor with stoichiometrically adjusted dielectric and method of fabricating same
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US20060105106A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Tensile and compressive stressed materials for semiconductors

Also Published As

Publication number Publication date
JP2008047620A (ja) 2008-02-28
EP2051290A1 (en) 2009-04-22
KR20090015158A (ko) 2009-02-11
US7972946B2 (en) 2011-07-05
TWI358088B (https=) 2012-02-11
KR101081783B1 (ko) 2011-11-09
WO2008018291A1 (fr) 2008-02-14
EP2051290A4 (en) 2010-04-21
US20090176380A1 (en) 2009-07-09

Similar Documents

Publication Publication Date Title
TW200822220A (en) Plasma processing method and plasma processing apparatus
TWI342590B (en) A stress-tuned, single-layer silicon nitride film
Vallée et al. Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition
KR102787198B1 (ko) 고 에칭 선택성 비정질 탄소 막
US6953609B2 (en) High-density plasma process for depositing a layer of silicon nitride
KR101158377B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 시스템
US9018108B2 (en) Low shrinkage dielectric films
JP2630257B2 (ja) 半導体装置の製造方法
CN109690736A (zh) 高压缩/拉伸的翘曲晶片上的厚钨硬掩模膜沉积
JP2005079254A (ja) 窒化シリコン膜の成膜方法
TW200814197A (en) Compressive nitride film and method of manufacturing thereof
KR20170048545A (ko) 3d nand 하드마스크 애플리케이션을 위한 나노결정질 다이아몬드 탄소 필름
JP2001507081A (ja) 誘導結合プラズマｃｖｄ
KR20150132529A (ko) 기판 상의 3차원 구조물의 층의 ｎｈ３ 함유 플라즈마 질화
CN100576464C (zh) 等离子体处理方法
US20250037996A1 (en) Seam removal in high aspect ratio gap-fill
CN102446833A (zh) 一种降低双大马士革氮化硅工艺颗粒的处理方法
CN100426473C (zh) 等离子体蚀刻方法及等离子体蚀刻装置
JP4358765B2 (ja) 窒化ホウ素膜の成膜方法及び成膜装置
JP4447438B2 (ja) 半導体装置の製造方法
JP2005286339A (ja) シリコンカーバイド基板上に二酸化シリコンを生成する高密度プラズマプロセス
US20250253192A1 (en) Barrier and liner treatment using dual radio frequency capacitive couple plasma for metal interconnects
JP2002334876A (ja) プラズマｃｖｄ装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees