JP5495940B2 - 半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置 - Google Patents
半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置 Download PDFInfo
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- JP5495940B2 JP5495940B2 JP2010116848A JP2010116848A JP5495940B2 JP 5495940 B2 JP5495940 B2 JP 5495940B2 JP 2010116848 A JP2010116848 A JP 2010116848A JP 2010116848 A JP2010116848 A JP 2010116848A JP 5495940 B2 JP5495940 B2 JP 5495940B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Description
プラズマ処理により基板上に形成され、半導体素子に用いる窒化珪素膜において、
前記基板にバイアスを印加して形成した第1の窒化珪素膜と前記基板にバイアスを印加しないで形成した第2の窒化珪素膜とを有し、前記第1の窒化珪素膜を、前記第2の窒化珪素膜と水素を透過しない特性を有する金属酸化膜又は金属窒化膜からなる水素透過防止膜との間に挟み込む構造としたことを特徴とする。
半導体素子に用いる窒化珪素膜を、プラズマ処理により基板上に形成する窒化珪素膜の製造方法において、
当該窒化珪素膜として、前記基板にバイアスを印加して第1の窒化珪素膜を形成し、前記基板にバイアスを印加しないで第2の窒化珪素膜を形成すると共に、前記第2の窒化珪素膜と水素を透過しない特性を有する金属酸化膜又は金属窒化膜からなる水素透過防止膜との間に挟み込むように、前記第1の窒化珪素膜を形成することを特徴とする。
半導体素子に用いる窒化珪素膜を、プラズマ処理により基板上に形成する窒化珪素膜の製造装置において、
前記基板にバイアスを印加するバイアス供給手段を備え、
当該窒化珪素膜として、第1の窒化珪素膜と第2の窒化珪素膜とを形成すると共に、前記第2の窒化珪素膜と水素を透過しない特性を有する金属酸化膜又は金属窒化膜からなる水素透過防止膜との間に挟み込むように、前記第1の窒化珪素膜を形成する際に、前記バイアス供給手段は、前記第1の窒化珪素膜を形成するときには前記基板にバイアスを印加し、前記第2の窒化珪素膜を形成するときには前記基板にバイアスを印加しないことを特徴とする。
最初に、本実施例で用いる窒化珪素膜(SiN膜)の製造装置について、図1を参照して、その構成を説明する。なお、本発明は、バイアスパワーを印加して、SiN膜を成膜するプラズマ処理装置であれば、どのようなものでも適用可能であるが、特に、高密度プラズマを用いたプラズマCVD装置が好適であり、図1では、当該プラズマCVD装置を例示している。
[バイアスSiN膜]
RFパワー:2.0kW、バイアスパワー:2.4kW、SiH4:40sccm、N2:80sccm、Ar:20sccm、圧力25mTorr、膜厚4513Å
[アンバイアスSiN膜]
RFパワー:3.0kW、バイアスパワー:0W、SiH4:30sccm、N2:800sccm、Ar:0sccm、圧力25mTorr、膜厚4226Å
なお、この成膜条件は一例であり、アンバイアスSiN膜の場合、以下の成膜条件の範囲とすれば、後述する特性を得ることができる。
成膜温度:50℃〜400℃
SiH4及びN2の総流量に対するRFパワー:7W/sccm以下
ガス流量比:SiH4/(SiH4+N2)=0.036〜0.33
18 ガス供給管
19 基板
26 バイアス電源
29 主制御装置
31 バイアスSiN膜
32、32a、32b アンバイアスSiN膜
Claims (3)
- プラズマ処理により基板上に形成され、半導体素子に用いる窒化珪素膜において、
前記基板にバイアスを印加して形成した第1の窒化珪素膜と前記基板にバイアスを印加しないで形成した第2の窒化珪素膜とを有し、前記第1の窒化珪素膜を、前記第2の窒化珪素膜と水素を透過しない特性を有する金属酸化膜又は金属窒化膜からなる水素透過防止膜との間に挟み込む構造としたことを特徴とする半導体素子の窒化珪素膜。 - 半導体素子に用いる窒化珪素膜を、プラズマ処理により基板上に形成する窒化珪素膜の製造方法において、
当該窒化珪素膜として、前記基板にバイアスを印加して第1の窒化珪素膜を形成し、前記基板にバイアスを印加しないで第2の窒化珪素膜を形成すると共に、前記第2の窒化珪素膜と水素を透過しない特性を有する金属酸化膜又は金属窒化膜からなる水素透過防止膜との間に挟み込むように、前記第1の窒化珪素膜を形成することを特徴とする窒化珪素膜の製造方法。 - 半導体素子に用いる窒化珪素膜を、プラズマ処理により基板上に形成する窒化珪素膜の製造装置において、
前記基板にバイアスを印加するバイアス供給手段を備え、
当該窒化珪素膜として、第1の窒化珪素膜と第2の窒化珪素膜とを形成すると共に、前記第2の窒化珪素膜と水素を透過しない特性を有する金属酸化膜又は金属窒化膜からなる水素透過防止膜との間に挟み込むように、前記第1の窒化珪素膜を形成する際に、前記バイアス供給手段は、前記第1の窒化珪素膜を形成するときには前記基板にバイアスを印加し、前記第2の窒化珪素膜を形成するときには前記基板にバイアスを印加しないことを特徴とする窒化珪素膜の製造装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010116848A JP5495940B2 (ja) | 2010-05-21 | 2010-05-21 | 半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置 |
EP11783423.4A EP2573803A4 (en) | 2010-05-21 | 2011-05-11 | SILICON NITRIDE FILM FOR A SEMICONDUCTOR COMPONENT AND METHOD AND DEVICE FOR PRODUCING THE SILICON NITRIDE FILM |
US13/638,200 US20130071671A1 (en) | 2010-05-21 | 2011-05-11 | Silicon nitride film for semiconductor element, and method and apparatus for manufacturing silicon nitride film |
KR1020127025472A KR101346863B1 (ko) | 2010-05-21 | 2011-05-11 | 반도체 소자의 질화규소막, 질화규소막의 제조 방법 및 장치 |
PCT/JP2011/060809 WO2011145489A1 (ja) | 2010-05-21 | 2011-05-11 | 半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置 |
TW100116954A TW201207945A (en) | 2010-05-21 | 2011-05-13 | Silicon nitride film for semiconductor element, and method and apparatus for manufacturing silicon nitride film |
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JP2010116848A JP5495940B2 (ja) | 2010-05-21 | 2010-05-21 | 半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置 |
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JP2011243889A JP2011243889A (ja) | 2011-12-01 |
JP5495940B2 true JP5495940B2 (ja) | 2014-05-21 |
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US (1) | US20130071671A1 (ja) |
EP (1) | EP2573803A4 (ja) |
JP (1) | JP5495940B2 (ja) |
KR (1) | KR101346863B1 (ja) |
TW (1) | TW201207945A (ja) |
WO (1) | WO2011145489A1 (ja) |
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JP2014060378A (ja) * | 2012-08-23 | 2014-04-03 | Tokyo Electron Ltd | シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置 |
JP6363385B2 (ja) * | 2014-04-21 | 2018-07-25 | 東京エレクトロン株式会社 | 封止膜の形成方法及び封止膜製造装置 |
US10354860B2 (en) | 2015-01-29 | 2019-07-16 | Versum Materials Us, Llc | Method and precursors for manufacturing 3D devices |
US11037780B2 (en) * | 2017-12-12 | 2021-06-15 | Asm Ip Holding B.V. | Method for manufacturing semiconductor device with helium-containing gas |
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JP2000091420A (ja) * | 1998-05-11 | 2000-03-31 | Sony Corp | 半導体装置の製造方法 |
JP4332263B2 (ja) | 1998-10-07 | 2009-09-16 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタの製造方法 |
JP2004095861A (ja) * | 2002-08-30 | 2004-03-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2006332538A (ja) | 2005-05-30 | 2006-12-07 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2006319355A (ja) * | 2006-07-07 | 2006-11-24 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2008047620A (ja) * | 2006-08-11 | 2008-02-28 | Mitsubishi Heavy Ind Ltd | プラズマ処理方法、及び、プラズマ処理装置 |
TW200930135A (en) * | 2007-08-31 | 2009-07-01 | Tokyo Electron Ltd | Organic electronic device, organic electronic device manufacturing method, organic electronic device manufacturing apparatus, substrate processing system, protection film structure and storage medium with control program stored therein |
JP5297048B2 (ja) | 2008-01-28 | 2013-09-25 | 三菱重工業株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP2010262989A (ja) * | 2009-04-30 | 2010-11-18 | Elpida Memory Inc | 半導体装置の製造方法 |
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2010
- 2010-05-21 JP JP2010116848A patent/JP5495940B2/ja not_active Expired - Fee Related
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2011
- 2011-05-11 EP EP11783423.4A patent/EP2573803A4/en not_active Withdrawn
- 2011-05-11 US US13/638,200 patent/US20130071671A1/en not_active Abandoned
- 2011-05-11 WO PCT/JP2011/060809 patent/WO2011145489A1/ja active Application Filing
- 2011-05-11 KR KR1020127025472A patent/KR101346863B1/ko active IP Right Grant
- 2011-05-13 TW TW100116954A patent/TW201207945A/zh unknown
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Publication number | Publication date |
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KR20120132536A (ko) | 2012-12-05 |
TW201207945A (en) | 2012-02-16 |
JP2011243889A (ja) | 2011-12-01 |
WO2011145489A1 (ja) | 2011-11-24 |
US20130071671A1 (en) | 2013-03-21 |
KR101346863B1 (ko) | 2014-01-02 |
EP2573803A4 (en) | 2013-12-18 |
EP2573803A1 (en) | 2013-03-27 |
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