JP2020529736A - 水平表面上におけるSiNの選択的堆積 - Google Patents
水平表面上におけるSiNの選択的堆積 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title claims description 66
- 238000000034 method Methods 0.000 claims abstract description 174
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 126
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 125
- 150000004767 nitrides Chemical class 0.000 claims abstract description 116
- 238000005530 etching Methods 0.000 claims abstract description 69
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 65
- 239000010937 tungsten Substances 0.000 claims abstract description 65
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims description 120
- 238000000151 deposition Methods 0.000 claims description 84
- 239000007789 gas Substances 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 76
- 238000012545 processing Methods 0.000 claims description 26
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000376 reactant Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 239000000945 filler Substances 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 14
- 229910052731 fluorine Inorganic materials 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 8
- 238000004080 punching Methods 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract description 7
- 238000009825 accumulation Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 43
- 210000002381 plasma Anatomy 0.000 description 42
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 15
- 230000007261 regionalization Effects 0.000 description 14
- 238000012546 transfer Methods 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 230000003750 conditioning effect Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 3
- -1 oxide Chemical class 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- UUXZFMKOCRKVDG-UHFFFAOYSA-N methane;hydrofluoride Chemical compound C.F UUXZFMKOCRKVDG-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H10B—ELECTRONIC MEMORY DEVICES
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
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- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- Chemical Vapour Deposition (AREA)
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- Drying Of Semiconductors (AREA)
Abstract
Description
本出願は、2017年8月4日に出願された米国仮特許出願第62/541,262号に対する優先権を主張し、あらゆる目的のために本明細書に参照として組み込まれる。
装置
結論
Claims (20)
- 3D NAND構造を製造するために半導体基板を処理する方法であって、前記方法は、
階段パターンで構成された、交互に設けられた酸化物層および窒化物層を有する基板を提供する工程であって、前記窒化物層の各々は露出された水平表面を有する、工程と、
前記階段パターン上に酸化物充填材を堆積する前に、高密度プラズマ化学気相成長(HDP CVD)によって、前記酸化物層および前記窒化物層の両方の上に窒化ケイ素(SiN)を堆積させる工程と、を含み、
前記SiNは、前記窒化物層の前記露出された水平表面上に、各層において、酸化物側壁表面に対して選択的に堆積されて、SiNパッドが形成される、方法。 - 請求項1に記載の方法であって、HDP CVDによるSiNの前記堆積させる工程は、
前記窒化物層の前記露出された水平表面上にSiNを堆積して前記SiNパッドを形成する工程、および、前記階段パターンの前記酸化物層の側壁に堆積されたSiNを、前記SiNパッドに対して選択的にエッチングする工程、を同時に実施する工程を含む、方法。 - 請求項1に記載の方法であって、
前記窒化物層の前記露出された水平表面を各層において、堆積化学物質に暴露させて前記SiNパッドを形成する工程と、
前記階段パターンの前記酸化物層の側壁をエッチャントに暴露させて、前記側壁に堆積されたSiNを、前記SiNパッドに対して選択的にエッチングする工程と、を更に含む方法。 - 請求項3に記載の方法であって、前記窒化物層の前記露出された水平表面は、各層において、前記階段パターンの前記酸化物層が前記エッチャントに暴露される前に、前記堆積化学物質に暴露される、方法。
- 請求項3に記載の方法であって、前記エッチャントは、水素ガス(H2)、フッ素(F)含有ガス、またはそれらの組み合わせのうちの1つから生成されるプラズマ種を含む、方法。
- 請求項3に記載の方法であって、前記SiNの堆積から、前記酸化物層の前記側壁に堆積された前記SiNの選択的エッチングへの移行は、前記基板に印加されるバイアスを低下させることを含む、方法。
- 請求項1に記載の方法であって、HDP CVDによりSiNを堆積させる工程は、ケイ素含有反応物および窒素含有反応物をHDP CVDチャンバに流すことを含む、方法。
- 請求項7に記載の方法であって、HDP CVDによりSiNを堆積させる工程は、水素ガス(H2)を前記HDP CVDチャンバに流すことを更に含む、方法。
- 請求項1に記載の方法であって、
前記窒化物層をタングステンワード線で置換する工程、および、
前記SiNパッドをタングステンランディングパッドで置換する工程、を更に含む方法。 - 請求項9に記載の方法であって、
HDP CVDにより前記酸化物層および前記窒化物層の両方の上にSiNを堆積した後、前記階段パターン上に前記酸化物充填材を堆積する工程と、
前記酸化物充填材をエッチングして、前記酸化物充填材内に、前記タングステンワード線まで延びる垂直ビアを形成する工程であって、前記酸化物充填材は、前記タングステンランディングパッドに対して選択的にエッチングされる、工程と、
前記ビア内にタングステンを堆積させて、前記タングステンワード線まで延びるタングステンインターコネクトを形成する工程と、を更に含む方法。 - 請求項10に記載の方法であって、
1つ以上の前記ビアによる1つ以上の前記タングステンワード線のパンチスルーが生じないように保護するために、前記タングステンランディングパッドを位置決めする工程を更に含む、方法。 - 請求項1に記載の方法であって、
前記階段パターンの前記酸化物層の側壁に堆積されたSiNを、水平表面上のSiNの堆積物を実質的に損なわないようにしながら、選択的にエッチングする工程を更に含む、方法。 - 請求項1に記載の方法であって、前記交互に設けられた酸化物層および窒化物層の各々の厚さが約10nm〜約100nmである、方法。
- 請求項10に記載の方法であって、前記ビアは変動する深さを有する、方法。
- 方法であって、
酸化物層の間に窒化物層を挿入させて階段構造が形成された基板を提供する工程であって、前記窒化物層の部分は露出されている、工程と、
SiNを、高密度プラズマ化学気相成長(HDP CVD)によってケイ素含有反応物および窒素含有反応物から、前記基板にバイアスを印加しながら、前記窒化物層の露出された前記部分の平坦面上に堆積する工程と、
前記階段構造の前記酸化物層の側壁に堆積された材料を、前記側壁に堆積された前記材料を前記窒化物層の露出された前記部分の前記平坦面上の前記材料に対して選択的にエッチングすることにより、除去する工程と、を含む方法。 - 請求項15に記載の方法であって、前記ケイ素含有反応物および窒素含有反応物の前記堆積は異方性である、方法。
- 請求項15に記載の方法であって、前記側壁に堆積された前記材料をエッチングすることは、水素ガス(H2)、フッ素(F)含有ガス、またはそれらの組み合わせから生成されたプラズマ種に前記側壁を暴露させることを含む、方法。
- 請求項15に記載の方法であって、前記側壁に堆積された前記材料の前記堆積および前記除去が同時に実行される、方法。
- 請求項15に記載の方法であって、前記側壁に堆積された前記材料の前記堆積および前記除去が逐次的に実行される、方法。
- 基板を処理するための装置であって、前記装置は、
内部にプロセスチャンバを収容するリアクタと、
前記プロセスチャンバと流体連通し結合しているプラズマ源と、
前記プロセスチャンバ内に配置された基板台座であって、前記基板台座と結合された電極によって供給される電気エネルギーを受け取る、基板台座と、
前記プロセスチャンバの中に通じる1つ以上のガス入口であって、前記ガス入口によってプロセスガスが前記プロセスチャンバの中に導入される、ガス入口と、前記ガス入口に関連付けられた流量制御ハードウェアと、
前記リアクタを制御するように構成されたコントローラであって、前記コントローラはプロセッサおよびメモリを有し、前記プロセッサおよび前記メモリは互いに通信可能に接続されており、
前記プロセッサは、少なくとも、前記流量制御ハードウェアに動作可能に接続され、
前記メモリは、前記プロセッサを制御するためのコンピュータ実行可能命令を格納して、
(a)前記プロセスガスを前記プロセスチャンバに注入する工程であって、前記プロセスガスは、ケイ素含有反応物、窒素含有反応物、および、水素ガス(H2)を含み、前記水素ガスと前記ケイ素含有反応物との比は少なくとも1:2である、工程と、
(b)前記(a)の間に前記電極にバイアスを印加する工程と、
(c)前記(a)の後に、前記電極に印加された前記バイアスを低下させる工程と、
(d)前記(c)の間に、水素(H2)ガスまたは(F)フッ素ガスを注入する工程と、
によって前記流量制御ハードウェアを少なくとも制御する、コントローラと、
を備える装置。
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