JP2008042211A - 発光素子パッケージ及びその製造方法 - Google Patents
発光素子パッケージ及びその製造方法 Download PDFInfo
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- JP2008042211A JP2008042211A JP2007206625A JP2007206625A JP2008042211A JP 2008042211 A JP2008042211 A JP 2008042211A JP 2007206625 A JP2007206625 A JP 2007206625A JP 2007206625 A JP2007206625 A JP 2007206625A JP 2008042211 A JP2008042211 A JP 2008042211A
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- light emitting
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims description 83
- 238000005192 partition Methods 0.000 claims description 36
- 239000000945 filler Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 45
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000010931 gold Substances 0.000 description 10
- 239000004593 Epoxy Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000006089 photosensitive glass Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 Gallium nitride (GaN) compound Chemical class 0.000 description 1
- 229910020658 PbSn Inorganic materials 0.000 description 1
- 101150071746 Pbsn gene Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2924/156—Material
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Abstract
【解決手段】発光素子パッケージにおいて、パッケージボディと、該パッケージボディ上の少なくとも一側面に形成される電極と、パッケージボディ上に装着される発光素子と、該発光素子を均一な厚さに覆う蛍光体層と、を備える構成とした。発光素子から発光する光をその光経路差を最小限にしながら外部媒質を通じて放出できるようにしたため、発光素子の位置別の色座標均一度を向上させ、かつ、均一に波長の変換された光を放出することが可能になる。
【選択図】図6
Description
[第1実施例]
[第2実施例]
[第3実施例]
[第4実施例]
[第5実施例]
[第6実施例]
[第7実施例]
[第8実施例]
[第9実施例]
[第10実施例]
Claims (20)
- パッケージボディと、
前記パッケージボディ上の少なくとも一側面に形成される電極と、
前記パッケージボディ上に装着される発光素子と、
前記発光素子を均一な厚さにして覆う蛍光体層と、
を備えて構成されることを特徴とする、発光素子パッケージ。 - 前記発光素子の上面に形成された蛍光体層の厚さと前記発光素子の側面に形成された蛍光体層の厚さとが同一であることを特徴とする、請求項1に記載の発光素子パッケージ。
- 前記蛍光体層の横幅が、前記パッケージボディの横幅と同一であることを特徴とする、請求項1に記載の発光素子パッケージ。
- 前記電極が、
前記パッケージボディの上面に形成される上部電極と、
前記パッケージボディの下面に形成され、前記上部電極と連結される下部電極と、
を備えて構成されることを特徴とする、請求項1に記載の発光素子パッケージ。 - 前記上部電極と前記下部電極が、前記パッケージボディに形成された貫通孔を介して互いに連結されることを特徴とする、請求項4に記載の発光素子パッケージ。
- 前記蛍光体層が、前記発光素子を均一な厚さにして覆うように区画された投光性隔壁の内側に配置されることを特徴とする、請求項1に記載の発光素子パッケージ。
- 前記隔壁が、投光性フォトレジスト、感光性ポリマー、及びガラスのうちのいずれか一つで形成されていることを特徴とする、請求項6に記載の発光素子パッケージ。
- 前記隔壁は、前記発光素子の上側面と隔壁との高さの差が、前記発光素子の側面と隔壁との間の距離と同一になるようにして形成されていることを特徴とする、請求項6に記載の発光素子パッケージ。
- 前記蛍光体層は、蛍光体が混合された充填材であることを特徴とする、請求項1に記載の発光素子パッケージ。
- 前記発光素子が、パッケージボディに溝状に形成された装着部に装着されることを特徴とする、請求項1に記載の発光素子パッケージ。
- 前記装着部は、前記発光素子の上側面からの高さが、前記発光素子の側面からの水平距離と同一となるようにして形成されていることを特徴とする、請求項10に記載の発光素子パッケージ。
- 前記装着部の深さが、前記発光素子の高さの2乃至6倍であることを特徴とする、請求項10に記載の発光素子パッケージ。
- 前記装着部の横または縦の長さは、前記発光素子の横幅または縦幅の1.2乃至2倍であることを特徴とする、請求項10に記載の発光素子パッケージ。
- 基板上に複数の電極を形成する段階と、
前記基板上に、前記電極と連結されるように発光素子を接合する段階と、
前記発光素子の接合された基板の上側に蛍光体層を形成する段階と、
前記発光素子の上面に形成された蛍光体層の厚さと、切削によって露出される前記発光素子の側面に形成された蛍光体層の厚さとが同一となるようにして、前記基板と蛍光体層をパッケージ区分単位で切削する段階と、
を含んでなることを特徴とする、発光素子パッケージの製造方法。 - 前記各発光素子間の間隔は、前記発光素子の上面に形成される蛍光体層の厚さの2倍、または、前記発光素子の上面に形成される蛍光体層の厚さの2倍に、前記切削の段階で除去される幅を加えた長さであることを特徴とする、請求項14に記載の発光素子パッケージの製造方法。
- 前記各パッケージ区分単位には、複数の発光素子が配置されることを特徴とする、請求項14に記載の発光素子パッケージの製造方法。
- 基板において発光素子が装着される装着部に、前記発光素子周辺の領域を画定する隔壁を形成する段階と、
前記装着部に発光素子を装着する段階と、
前記隔壁の内側に蛍光体を充填する段階と、
を含んでなることを特徴とする、発光素子パッケージの製造方法。 - 前記隔壁を形成する段階の前に、前記基板に電極を形成する段階をさらに含むことを特徴とする、請求項17に記載の発光素子パッケージの製造方法。
- 前記隔壁は、前記基板に感光性ポリマーをコーティングした後に、写真エッチング工程を用いて形成することを特徴とする、請求項17に記載の発光素子パッケージの製造方法。
- 前記隔壁は、前記基板に投光性材料の隔壁を付着して形成することを特徴とする、請求項17に記載の発光素子パッケージの製造方法。
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Also Published As
Publication number | Publication date |
---|---|
US20120261705A1 (en) | 2012-10-18 |
TW200816525A (en) | 2008-04-01 |
JP2012178604A (ja) | 2012-09-13 |
TWI418054B (zh) | 2013-12-01 |
EP1887637A3 (en) | 2010-09-15 |
EP1887637B1 (en) | 2016-12-14 |
US9166123B2 (en) | 2015-10-20 |
JP2014135521A (ja) | 2014-07-24 |
US20100187556A1 (en) | 2010-07-29 |
EP1887637A2 (en) | 2008-02-13 |
US20080035942A1 (en) | 2008-02-14 |
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