JP2011044685A - 発光素子パッケージ用基板及びこれを含む発光素子パッケージ - Google Patents
発光素子パッケージ用基板及びこれを含む発光素子パッケージ Download PDFInfo
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
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- H01L2924/013—Alloys
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Abstract
【解決手段】本発明による発熱素子パッケージ用基板は、金属プレートと、前記金属プレートの表面に部分的に形成された絶縁酸化物層と、前記絶縁酸化物層の一領域に形成され、発熱素子の実装領域を提供する第1の導電パターンと、前記第1の導電パターンと離隔するように前記絶縁酸化物層の他の領域に形成された第2の導電パターンとを含む。
本発明による発光素子パッケージ用基板は、導電パターンを絶縁させる領域以外の絶縁酸化物層は除去され、発光素子から発生する熱を効率よく放出させることができる。また、絶縁酸化物層による発光素子の反射率及び輝度の低下を防止することができる。
【選択図】図1b
Description
102、202 絶縁酸化物層
103、203 導電パターン
111、121、211、221 発光素子
Claims (16)
- 金属プレートと、
前記金属プレートの表面に部分的に形成された絶縁酸化物層と、
前記絶縁酸化物層の一領域に形成され、発光素子の実装領域を提供する第1の導電パターンと、
前記第1の導電パターンと離隔するように前記絶縁酸化物層の他の領域に形成された第2の導電パターンと、
を含む発光素子パッケージ用基板。 - 前記部分的に形成された絶縁酸化物層により露出した金属プレートの領域は、前記絶縁酸化物層と同一の物質が形成された後に除去されて得られた領域であることを特徴とする請求項1に記載の発光素子パッケージ用基板。
- 前記絶縁酸化物層は、前記金属プレートの陽極酸化工程により形成された陽極酸化膜であることを特徴とする請求項1に記載の発光素子パッケージ用基板。
- 前記第1及び第2の導電パターン上にそれぞれ形成された第1及び第2の外部実装パッドをさらに含むことを特徴とする請求項1に記載の発光素子パッケージ用基板。
- 前記金属プレートに形成された貫通孔により、前記第1及び第2の導電パターンと電気的に連結される第1及び第2の外部実装パッドを含むことを特徴とする請求項1に記載の発光素子パッケージ用基板。
- 前記第1及び第2の外部実装パッドが形成されていない領域の絶縁酸化物層が除去されて、前記金属プレートが露出されることを特徴とする請求項5に記載の発光素子パッケージ用基板。
- 金属プレートと、
前記金属プレートの表面に部分的に形成された絶縁酸化物層と、
前記絶縁酸化層の一領域に形成され、発光素子パッケージの実装領域を提供する第1の導電パターンと、
前記第1の導電パターンと離隔するように前記絶縁酸化物層の他の領域に形成された第2の導電パターンと、
を含む発光素子パッケージの駆動回路基板。 - 金属プレートの表面に絶縁酸化物層を形成するステップと、
前記絶縁酸化物層上に発光素子の実装領域を提供する第1の導電パターン及び前記第1の導電パターンと離隔される第2の導電パターンを形成するステップと、
前記第1及び第2の導電パターンが形成されていない領域の絶縁酸化物層を除去して金属プレートを露出するステップと、
を含む発光素子パッケージ用基板の製造方法。 - 前記絶縁酸化物層は、前記金属プレートの陽極酸化工程により形成されることを特徴とする請求項8に記載の発光素子パッケージ用基板の製造方法。
- 前記金属プレートに貫通孔を形成し、前記貫通孔により前記第1及び第2の導電パターンと電気的に連結される第1及び第2の外部実装パッドを形成するステップを含むことを特徴とする請求項8に記載の発光素子パッケージ用基板の製造方法。
- 前記第1及び第2の外部実装パッドが形成されていない領域の絶縁酸化物層を除去して前記金属プレートを露出するステップを含むことを特徴とする請求項10に記載の発光素子パッケージ用基板の製造方法。
- 金属プレートと、
前記金属プレートの表面に部分的に形成された絶縁酸化物層と、
前記絶縁酸化物層の一領域に形成され、発熱素子の実装領域を提供する第1の導電パターンと、
前記第1の導電パターンと離隔するように前記絶縁酸化物層の他の領域に形成された第2の導電パターンと、
前記第1の導電パターンに実装され、前記第2の導電パターンと電気的に連結される発光素子と、
前記発光素子を覆う透明樹脂と、
を含む発光素子パッケージ。 - 前記第1及び第2の導電パターン上にそれぞれ形成された第1及び第2の外部実装パッドをさらに含むことを特徴とする請求項12に記載の発光素子パッケージ。
- 前記第1及び第2の導電パターン上に形成された第1及び第2の反射膜と、前記第1及び第2の反射膜を貫通する第1及び第2の外部実装パッドとをさらに含むことを特徴とする請求項12に記載の発光素子パッケージ。
- 前記金属プレートを貫通して形成され、前記第1及び第2の導電パターンと電気的に連結される第1及び第2の外部実装パッドをさらに含むことを特徴とする請求項12に記載の発光素子パッケージ。
- 前記金属プレートを貫通して形成され、前記第1及び第2の導電パターンと電気的に連結される第1及び第2の外部実装パッド及び前記第1及び第2の導電パターンに形成された反射膜をさらに含むことを特徴とする請求項12に記載の発光素子パッケージ。
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KR10-2009-0078403 | 2009-08-24 | ||
KR1020090078403A KR101124102B1 (ko) | 2009-08-24 | 2009-08-24 | 발광 소자 패키지용 기판 및 이를 포함하는 발광 소자 패키지 |
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- 2009-12-24 JP JP2009293174A patent/JP5156732B2/ja not_active Expired - Fee Related
- 2009-12-24 CN CN200910266305.6A patent/CN101997078A/zh active Pending
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Also Published As
Publication number | Publication date |
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JP5156732B2 (ja) | 2013-03-06 |
KR20110020672A (ko) | 2011-03-03 |
US20110042699A1 (en) | 2011-02-24 |
CN101997078A (zh) | 2011-03-30 |
KR101124102B1 (ko) | 2012-03-21 |
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