JP5156732B2 - 発光素子パッケージ用基板の製造方法 - Google Patents
発光素子パッケージ用基板の製造方法 Download PDFInfo
- Publication number
- JP5156732B2 JP5156732B2 JP2009293174A JP2009293174A JP5156732B2 JP 5156732 B2 JP5156732 B2 JP 5156732B2 JP 2009293174 A JP2009293174 A JP 2009293174A JP 2009293174 A JP2009293174 A JP 2009293174A JP 5156732 B2 JP5156732 B2 JP 5156732B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- insulating oxide
- emitting device
- metal plate
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 111
- 239000002184 metal Substances 0.000 claims description 111
- 238000007743 anodising Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000010407 anodic oxide Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Description
102、202 絶縁酸化物層
103、203 導電パターン
111、121、211、221 発光素子
Claims (4)
- 金属プレートの表面に絶縁酸化物層を形成するステップと、
前記絶縁酸化物層上に発光素子の実装領域を提供する第1の導電パターン及び前記第1の導電パターンと離隔される第2の導電パターンを形成するステップと、
前記第1及び第2の導電パターンが形成されていない領域の絶縁酸化物層を除去して金属プレートを露出し、熱伝達経路を形成するステップと、
を含む発光素子パッケージ用基板の製造方法。 - 前記絶縁酸化物層は、前記金属プレートの陽極酸化工程により形成されることを特徴とする請求項1に記載の発光素子パッケージ用基板の製造方法。
- 前記金属プレートに貫通孔を形成し、前記貫通孔により前記第1及び第2の導電パターンと電気的に連結される第1及び第2の外部実装パッドを形成するステップを含むことを特徴とする請求項1に記載の発光素子パッケージ用基板の製造方法。
- 前記第1及び第2の外部実装パッドが形成されていない領域の絶縁酸化物層を除去して前記金属プレートを露出するステップを含むことを特徴とする請求項3に記載の発光素子パッケージ用基板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090078403A KR101124102B1 (ko) | 2009-08-24 | 2009-08-24 | 발광 소자 패키지용 기판 및 이를 포함하는 발광 소자 패키지 |
KR10-2009-0078403 | 2009-08-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011044685A JP2011044685A (ja) | 2011-03-03 |
JP5156732B2 true JP5156732B2 (ja) | 2013-03-06 |
Family
ID=43604608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009293174A Expired - Fee Related JP5156732B2 (ja) | 2009-08-24 | 2009-12-24 | 発光素子パッケージ用基板の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110042699A1 (ja) |
JP (1) | JP5156732B2 (ja) |
KR (1) | KR101124102B1 (ja) |
CN (1) | CN101997078A (ja) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110003792A (ko) * | 2009-07-06 | 2011-01-13 | 주식회사 디지아이 | 칼라 인쇄회로기판의 제조방법 |
US8664538B2 (en) * | 2010-04-30 | 2014-03-04 | Wavenics Inc. | Terminal-integrated metal base package module and terminal-integrated metal base packaging method |
DE102010026344A1 (de) * | 2010-07-07 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
KR101255944B1 (ko) * | 2011-07-20 | 2013-04-23 | 삼성전기주식회사 | 전력 모듈 패키지용 기판 및 그 제조방법 |
US8836136B2 (en) | 2011-10-17 | 2014-09-16 | Invensas Corporation | Package-on-package assembly with wire bond vias |
KR101330582B1 (ko) * | 2011-12-23 | 2013-11-18 | (주)웨이브닉스이에스피 | 발광 장치 및 발광 장치 제조방법 |
KR101321001B1 (ko) * | 2011-12-26 | 2013-10-22 | 주식회사 루멘스 | 발광소자 패키지 및 발광소자 패키지 제조방법 |
US8946757B2 (en) * | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
CN103427006B (zh) * | 2012-05-14 | 2016-02-10 | 展晶科技(深圳)有限公司 | 发光二极管 |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
DE102012108627B4 (de) * | 2012-09-14 | 2021-06-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Halbleitervorrichtung und Trägerverbund |
JP6104682B2 (ja) * | 2013-04-09 | 2017-03-29 | シチズン電子株式会社 | 照明装置 |
KR102038693B1 (ko) * | 2013-04-15 | 2019-10-31 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9263394B2 (en) | 2013-11-22 | 2016-02-16 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
KR101557942B1 (ko) * | 2014-01-08 | 2015-10-12 | 주식회사 루멘스 | 발광 소자 패키지 및 발광 소자 패키지의 제조 방법 |
US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
KR102176472B1 (ko) * | 2014-01-28 | 2020-11-09 | 엘지이노텍 주식회사 | 인쇄회로기판 및 이를 포함하는 발광장치 |
US10381326B2 (en) | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
US9379298B2 (en) * | 2014-10-03 | 2016-06-28 | Henkel IP & Holding GmbH | Laminate sub-mounts for LED surface mount package |
US9735084B2 (en) | 2014-12-11 | 2017-08-15 | Invensas Corporation | Bond via array for thermal conductivity |
US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
US9761554B2 (en) | 2015-05-07 | 2017-09-12 | Invensas Corporation | Ball bonding metal wire bond wires to metal pads |
US10355184B2 (en) * | 2015-09-08 | 2019-07-16 | Seoul Viosys Co., Ltd. | Light-emitting diode package |
US10490528B2 (en) | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
US9490222B1 (en) | 2015-10-12 | 2016-11-08 | Invensas Corporation | Wire bond wires for interference shielding |
US10332854B2 (en) | 2015-10-23 | 2019-06-25 | Invensas Corporation | Anchoring structure of fine pitch bva |
US10181457B2 (en) | 2015-10-26 | 2019-01-15 | Invensas Corporation | Microelectronic package for wafer-level chip scale packaging with fan-out |
US10043779B2 (en) | 2015-11-17 | 2018-08-07 | Invensas Corporation | Packaged microelectronic device for a package-on-package device |
US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
TWI662872B (zh) * | 2018-01-26 | 2019-06-11 | 謝孟修 | 陶瓷電路板及其製法 |
CN111343794A (zh) * | 2018-12-19 | 2020-06-26 | 同扬光电(江苏)有限公司 | 柔性线路板结构及其制作方法 |
KR20210097855A (ko) * | 2020-01-30 | 2021-08-10 | 삼성전자주식회사 | 금속 베이스 배선 기판 및 전자소자 모듈 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US166664A (en) * | 1875-08-10 | Improvement in inner soles for boots and shoes | ||
US35942A (en) * | 1862-07-22 | Improvement in steam-boh-ers | ||
JPH08174898A (ja) * | 1994-12-27 | 1996-07-09 | Canon Inc | 露光装置 |
JP4296644B2 (ja) * | 1999-01-29 | 2009-07-15 | 豊田合成株式会社 | 発光ダイオード |
US6983537B2 (en) * | 2000-07-25 | 2006-01-10 | Mediana Electronic Co., Ltd. | Method of making a plastic package with an air cavity |
DE10125374C1 (de) * | 2001-05-23 | 2003-01-16 | Osram Opto Semiconductors Gmbh | Gehäuse für einen elektromagnetische Strahlung emittierenden Halbleiterchip und Verfahren zu dessen Herstellung |
JP2004241757A (ja) * | 2003-01-17 | 2004-08-26 | Sharp Corp | 光結合半導体装置とその製造方法 |
WO2006135130A1 (en) * | 2005-06-15 | 2006-12-21 | Lg Chem, Ltd. | Light emitting diode device using electrically conductive interconnection section |
KR100760075B1 (ko) * | 2006-01-26 | 2007-09-18 | 엘지전자 주식회사 | 발광 소자 패키지 및 그의 제조 방법 |
TWI295115B (en) * | 2006-02-13 | 2008-03-21 | Ind Tech Res Inst | Encapsulation and methods thereof |
KR100780196B1 (ko) * | 2006-02-27 | 2007-11-27 | 삼성전기주식회사 | 발광다이오드 패키지, 발광다이오드 패키지용 회로기판 및그 제조방법 |
KR101210090B1 (ko) * | 2006-03-03 | 2012-12-07 | 엘지이노텍 주식회사 | 금속 코어 인쇄회로기판 및 이를 이용한 발광 다이오드패키징 방법 |
KR100764386B1 (ko) * | 2006-03-20 | 2007-10-08 | 삼성전기주식회사 | 고온공정에 적합한 절연구조체 및 그 제조방법 |
TWI418054B (zh) * | 2006-08-08 | 2013-12-01 | Lg Electronics Inc | 發光裝置封裝與製造此封裝之方法 |
JP2008124195A (ja) * | 2006-11-10 | 2008-05-29 | Sanyo Electric Co Ltd | 発光装置およびその製造方法 |
JP2008140934A (ja) * | 2006-11-30 | 2008-06-19 | Toshiba Lighting & Technology Corp | 発光ダイオード装置及び照明装置 |
JP5220373B2 (ja) * | 2007-09-25 | 2013-06-26 | 三洋電機株式会社 | 発光モジュール |
KR20090072941A (ko) * | 2007-12-28 | 2009-07-02 | 삼성전기주식회사 | 고출력 led 패키지 및 그 제조방법 |
JP4989614B2 (ja) * | 2007-12-28 | 2012-08-01 | サムソン エルイーディー カンパニーリミテッド. | 高出力ledパッケージの製造方法 |
KR100930502B1 (ko) * | 2008-01-16 | 2009-12-09 | (주)웨이브닉스이에스피 | 금속 기판을 이용한 광소자 패키지 플랫폼 제조방법 |
-
2009
- 2009-08-24 KR KR1020090078403A patent/KR101124102B1/ko not_active IP Right Cessation
- 2009-12-18 US US12/654,431 patent/US20110042699A1/en not_active Abandoned
- 2009-12-24 CN CN200910266305.6A patent/CN101997078A/zh active Pending
- 2009-12-24 JP JP2009293174A patent/JP5156732B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101997078A (zh) | 2011-03-30 |
JP2011044685A (ja) | 2011-03-03 |
KR101124102B1 (ko) | 2012-03-21 |
US20110042699A1 (en) | 2011-02-24 |
KR20110020672A (ko) | 2011-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5156732B2 (ja) | 発光素子パッケージ用基板の製造方法 | |
KR100764388B1 (ko) | 양극산화 금속기판 모듈 | |
US8610146B2 (en) | Light emitting diode package and method of manufacturing the same | |
US20110316035A1 (en) | Heat dissipating substrate and method of manufacturing the same | |
KR101095202B1 (ko) | 하이브리드형 방열기판 및 그 제조방법 | |
US20120261689A1 (en) | Semiconductor device packages and related methods | |
KR100796522B1 (ko) | 전자소자 내장형 인쇄회로기판의 제조방법 | |
TW201232854A (en) | Substrate structure of LED packaging and manufacturing method of the same | |
JP5086378B2 (ja) | メタル積層板及びこれを用いた発光ダイオードパッケージの製造方法 | |
US20110101392A1 (en) | Package substrate for optical element and method of manufacturing the same | |
JP5175320B2 (ja) | 放熱基板及びその製造方法 | |
JP2012004527A (ja) | 放熱基板及びその製造方法 | |
KR101080702B1 (ko) | 도금된 천공을 구비한 발광 다이오드 패키지 및 그의 제작방법 | |
KR101119259B1 (ko) | 하이브리드형 방열기판 및 그 제조방법 | |
JP4940276B2 (ja) | 放熱パッケージ基板及びその製造方法 | |
JP5197562B2 (ja) | 発光素子パッケージ及びその製造方法 | |
KR101163893B1 (ko) | 방열회로기판 및 그의 제조 방법 | |
KR20090033592A (ko) | 방열 특성이 향상된 led 어레이 모듈 | |
JP5062583B2 (ja) | 電子部品用パッケージ | |
KR20120064161A (ko) | 엘이디 패키지용 리드 프레임 기판 및 그의 제조 방법 | |
KR101856217B1 (ko) | 필름 타입의 광소자 패키지 및 그 제조 방법 | |
KR101107590B1 (ko) | 발광소자 패키지의 제조방법 | |
KR20120009727A (ko) | 방열회로기판 및 그의 제조 방법 | |
KR20080029571A (ko) | 발광 다이오드 | |
KR20120064162A (ko) | 임베디드 칩 온 보드 패키지 및 그의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120406 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121127 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121210 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151214 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |