TWI662872B - 陶瓷電路板及其製法 - Google Patents
陶瓷電路板及其製法 Download PDFInfo
- Publication number
- TWI662872B TWI662872B TW107103007A TW107103007A TWI662872B TW I662872 B TWI662872 B TW I662872B TW 107103007 A TW107103007 A TW 107103007A TW 107103007 A TW107103007 A TW 107103007A TW I662872 B TWI662872 B TW I662872B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- composite material
- ceramic
- material layer
- circuit board
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000002131 composite material Substances 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 239000000843 powder Substances 0.000 claims abstract description 37
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 34
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000005496 eutectics Effects 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 12
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 12
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 9
- 239000005751 Copper oxide Substances 0.000 claims description 7
- 229910000431 copper oxide Inorganic materials 0.000 claims description 7
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 6
- 229910001923 silver oxide Inorganic materials 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910003455 mixed metal oxide Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000011094 fiberboard Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0195—Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
- H05K3/424—Plated through-holes or plated via connections characterised by electroplating method by direct electroplating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Laminated Bodies (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
本發明關於一種陶瓷電路板及其製法,該陶瓷電路板包括一基板及一複合材料層。該複合材料層係形成於該基板上,且成分包含金屬氧化物粉體及陶瓷粉體。其中,該複合材料層的表面還顯露一上界面層,該上界面層包含從該金屬氧化物粉體還原的金屬、低價金屬氧化物及其共晶結構
Description
本發明係關於一種陶瓷電路板及其製法。
陶瓷電路板所採用的陶瓷基板具高散熱性和大電流負載能力、耐高溫高壓等惡劣工作環境,因此滿足了產品在各種場合的應用需求,例如大功率的電力模組、大功率的發光二極體(light-emitting diode,LED)照明等產品。
習知陶瓷散熱基板之製程概包括底下幾種:低溫共燒多層陶瓷(Low-Temperature Co-fired Ceramic,LTCC)、高溫共燒多層陶瓷(High-Temperature Co-fired Ceramic,HTCC)、直接接合銅基板(Direct Bonded Ceramic,DBC)與直接鍍銅基板(Direct Plated Ceramic,DPC)等,其中高溫共燒多層陶瓷(HTCC)屬於較早期發展之技術,但由於其較高的製程溫度(1300~1600℃),使其材料選擇受限且製作成本昂貴。隨後的低溫共燒多層陶瓷(LTCC)因於材料中加入了玻璃材料,使得其共燒溫度降至約 850℃,但也因此使整體的熱傳導率降低至2~3W/mK之間,比其他陶瓷基板都還要低。直接接合銅基板(DBC)技術乃利用1065~1085℃高溫加熱將氧化鋁與銅板直接結合,製造費用較高,且存在氧化鋁與銅板間微氣孔產生之問題不易解決。
目前業界普遍採用的是直接鍍銅基板(DPC)技術,其乃是利用真空濺鍍技術(Sputtering)及曝光顯影方式在陶瓷基板上刻劃出電路圖形,具體製程可參見美國公開第20110079418號專利。
本發明提供一種陶瓷電路板的製法,包括:提供一基板;在該基板上形成一複合材料層,該複合材料層的成分包含金屬氧化物粉體及陶瓷粉體; 及以雷射光照射該複合材料層,使得該複合材料層被該雷射光照射到的區域中的金屬氧化物粉體還原形成一界面層,且該界面層係顯露於該複合材料層的表面。其中,該界面層包含還原自該金屬氧化物粉體的金屬,或是包含還原自該金屬氧化物粉體的金屬、低價金屬氧化物及其共晶結構。
在一實施例中,本發明上述基板的製作步驟包括:提供一底板,該底板係為一金屬板;及於該底板上形成一陶瓷層;其中,該複合材料層係形成於該陶瓷層上。
在一實施例中,本發明上述製法包括:在該界面層上形成一導電金屬層。
本發明還提供一種陶瓷電路板,包括一基板及一複合材料層,該複合材料層係形成於該基板上,且成分包含金屬氧化物粉體及陶瓷粉體。其中,該複合材料層的表面還顯露一界面層,該界面層係由該複合材料層的金屬氧化物粉體還原形成。其中,該界面層可包含還原自該金屬氧化物粉體的金屬,或是包含還原自該金屬氧化物粉體的金屬、低價金屬氧化物及其共晶結構。
在一實施例中,本發明之陶瓷電路板的上述基板包括一底板及一陶瓷層,該底板係為一金屬板;該陶瓷層形成於該底板上;其中,該複合材料層係形成於該陶瓷層上。
在一實施例中,本發明之陶瓷電路板包括形成於該界面層上的一導電金屬層。
在一實施例中,本發明上述複合材料層的金屬氧化物粉體係選自氧化銀、氧化銅或氧化鎳其中一者或多者。
相對於先前技術,利用本發明上述製法可快速製作出上述陶瓷電路板,且其製作過程僅使用雷射光照射上述複合材料層就能獲得可供電鍍導電金屬的界面層,不需使用設備成本昂貴且製作速度緩慢的真空濺鍍技術。
圖1之部分斷面示意圖係用於說明本發明陶瓷電路板100的製法的一個實施例,該製法包括底下步驟:
首先,如圖1(A)所示,提供一基板10。基板10材料不限,例如基板10可為一金屬板、一非金屬板、一陶瓷板、或一多層板。在本實施例中,基板10包括一底板1及形成在底板1上的一陶瓷層2,但不以此為限。其中,底板1的厚度較佳約在0.3 mm ~ 1.5 mm,其可為一金屬板、一鋁板、一鋁合金板、一銅板、一銅合金板、一塑膠板、一電木板、一聚脂纖維板(Polyester, PET)、一聚醯亞胺板(Polyimide, PI)⋯⋯等等。陶瓷層2之材料可選自氮化硼、氮化鋁、氧化鋁及碳化矽的其中一者或多者,其厚度約在10μm至30μm之間,並可視需要添加有無機導熱粉體(例如:石墨炭),以提其高其散熱性。在本實施例中,是將陶瓷粉體與液態樹脂(例如:矽氧樹脂、矽基樹脂或環氧樹脂)均勻混合之後,再噴塗或淋塗於底板1的表面(例如頂面),然後加熱(大約200°C),以形成前述的陶瓷層2,此陶瓷層2具有耐高電壓、電絕緣、及散熱等特性。
接著,如圖1(B)所示,於基板10上形成一複合材料層3a,複合材料層3a的成分包含金屬氧化物粉體及陶瓷粉體。在本實施例中,是將金屬氧化物粉體與陶瓷粉體混合後,經過噴霧乾燥製成奈米級混合粉體,然後將該奈米級混合粉體與液態樹脂(例如:矽氧樹脂、矽基樹脂或環氧樹脂)均勻混合之後,再噴塗或淋塗於陶瓷層2的表面(例如頂面),然後加熱(大約200°C),以形成前述複合材料層3a。其中,金屬氧化物可選自氧化銀、氧化銅或氧化鎳其中一者或多者,但不以此為限,至於複合材料層3a所使用的陶瓷粉體則可相同或近似於上述陶瓷層2所使用陶瓷粉體。
續參閱圖1(C),以雷射光的照射複合材料層3a,使得該複合材料層3a被該雷射光照射到的區域中的金屬氧化物粉體還原形成可鍍上導電金屬的一界面層3,且該界面層3係顯露於該複合材料層3a的表面。其中,被該雷射光照射到的區域可涵蓋複合材料層3a的全部表面,也可以只涵蓋部分表面。本實施例中,複合材料層3a只有部分表面被該雷射光照射到而還原成為界面層3,其餘表面則因未被該雷射光照射到而仍為複合材料層3a。此複合材料層3a因仍含有陶瓷成分,故仍具有耐高電壓、電絕緣、及散熱等特性,並能牢固地接合於上述陶瓷層2。
在本實施例中,該雷射光的波長為1064nm,然而,針對其它不同的金屬氧化物材料得選用其他不同波段的光源,例如波長為266nm、532nm、10.6μm的雷射光。另外,該雷射光可採取掃瞄方式來照射複合材料層3a,例如,根據預先設計的一圖案(例如一電路圖案)控制該雷射光去掃瞄複合材料層3a,以獲得形狀相同於該圖案的界面層3,例如兩個具有圖2所示形狀的界面層3。
在被該雷射光照射到的區域中,金屬氧化物會被該雷射光激發而還原形成金屬、低價金屬氧化物及其共晶結構,此即前述的界面層3。其中,所述的金屬還原現象主要乃是利用某些奈米級的金屬原子具有受光激發而脫氧還原的特性。舉例而言,當複合材料層3a中的金屬氧化物係選擇氧化銅(CuO)時,由於奈米銅原子具有受光激發還原的特性,因此,氧化銅受光激發後會脫氧還原成為零價銅(Cu)、氧化亞銅(CuO
2)及其共晶結構。
較佳地,如圖1(D)及圖3所示,本發明製法還包括在上述界面層3上形成一導電金屬層4。其中,導電金屬層4的材料可選自銅、銀、銦、鎳或其合金。在本實施例中,導電金屬層4是以電鍍方式形成的。
在另一實施例中,如圖4(A)及圖5所示,當複合材料層3a的全部表面都被該雷射光照射時,複合材料層3a的表面將全部變成上述的界面層3。接著,如圖4(B)所示,在經過電鍍之後,導電金屬層4將形成於界面層3的全部表面。然後,如圖4(C)及圖6所示,利用現有的印刷電路板製作技術,將導電金屬層4製作成想要的圖案(例如一電路圖案)。
在圖1至6所示的實施例中,本發明製法是實施於底板1的一上表面或一下表面,故所得到的陶瓷電路板100係為一單面電路板,上述導電金屬層4即為該單面電路板上的電路。
然而,如圖7所示,當本發明製法實施於底板1的該上表面及下表面時,則所得到的陶瓷電路板100a係包括上述底板1、一上陶瓷層20及一下陶瓷層21、一上複合材料層30a及一下複合材料層31a(兩者相同於上述複合材料層3a)、一上界面層300及一下界面層301(兩者相同於上述界面層3),較佳還包括一上導電金屬層400及一下導電金屬層401。簡言之,陶瓷電路板100a係為一雙面電路板,上導電金屬層400及下導電金屬層401即分別為該雙面電路板上面及下面的電路。
再者,如圖8所示,當底板1具有至少一個貫穿孔5,且本發明製法實施於底板1的上、下表面及貫穿孔5時,所得到的陶瓷電路板100b不但具有圖7所示的層次構造,還包括該貫穿孔5、形成於貫穿孔5的壁面上的一孔內陶瓷層22、及形成於該孔內陶瓷層22上的孔內複合材料層32a(相同於上述複合材料層3a)。孔內陶瓷層22連接上、下陶瓷層20及21,孔內複合材料層32a連接上、下複合材料層30a及31a。孔內複合材料層32a的表面還顯露一孔內界面層302。孔內界面層302係還原自孔內複合材料層32a的金屬氧化物粉體,且連接該上、下界面層300及301。較佳還包括至少一孔內導電金屬層402,其形成於孔內界面層302上且連接上、下導電金屬層400及401。簡言之,陶瓷電路板100b係為具有導電貫穿孔的一雙面電路板,上導電金屬層400及下導電金屬層401即分別為該雙面電路板上面及下面的電路,該兩電路係藉由孔內導電金屬層402構成電性連接。
另外,可於底板1的底面及/或頂面形成一或多道預切溝槽(V-CUT,圖中未示),可方便後續將所製作的陶瓷電路板100,100a或100b分割成數塊。
從上述說明可知,利用本發明方法可快速製作出一單面或雙面的陶瓷電路板,且其製作過程僅使用雷射光照射上述複合材料層3a就能獲得可供電鍍導電金屬的界面層3,不需使用設備成本昂貴且製作速度緩慢的真空濺鍍技術。
1‧‧‧底板
10‧‧‧基板
100、100a、100b‧‧‧陶瓷電路板
2‧‧‧陶瓷層
20‧‧‧上陶瓷層
21‧‧‧下陶瓷層
22‧‧‧孔內陶瓷層
3‧‧‧界面層
3a‧‧‧複合材料層
30a‧‧‧上複合材料層
31a‧‧‧下複合材料層
32a‧‧‧孔內複合材料層
300‧‧‧上界面層
301‧‧‧下界面層
302‧‧‧孔內界面層
4‧‧‧導電金屬層
400‧‧‧上導電金屬層
401‧‧‧下導電金屬層
402‧‧‧孔內導電金屬層
5‧‧‧貫穿孔
圖1之斷面示意圖係顯示本發明之一種陶瓷電路板100及其製法的一個較佳實施例。 圖2係顯示圖1(C)的俯視圖。 圖3係圖1(D)的俯視圖。 圖4之斷面示意圖係顯示本發明陶瓷電路板製法的另一較佳實施例。 圖5係圖4(A)的俯視圖。 圖6係圖4(C)的俯視圖。 圖7係顯示本發明之另一種陶瓷電路板100a的部分斷面示意圖。 圖8係顯示本發明之再一種陶瓷電路板100b的部分斷面示意圖。
Claims (12)
- 一種陶瓷電路板的製法,包括底下步驟:提供一基板;在該基板上形成一複合材料層,該複合材料層的成分包含混合的金屬氧化物粉體及陶瓷粉體;及以雷射光照射該複合材料層,使得該複合材料層被該雷射光照射到的區域中的金屬氧化物粉體還原形成一界面層,未照射到雷射光的部分仍為該複合材料層,且該界面層係顯露於該複合材料層的表面,並包含還原自該金屬氧化物粉體的金屬。
- 如請求項1所述的製法,其中,該基板的製作步驟包括:提供一底板,該底板係為一金屬板;及於該底板上形成一陶瓷層;其中,該複合材料層係形成於該陶瓷層上。
- 如請求項1或2所述的製法,包括:在該界面層上形成一導電金屬層。
- 如請求項1或2所述的製法,其中該複合材料層的金屬氧化物粉體係選自氧化銀、氧化銅或氧化鎳其中一者或多者。
- 如請求項1或2所述的製法,其中該界面層包含還原自該金屬氧化物粉體的低價金屬氧化物及其共晶結構。
- 如請求項3所述的製法,其中該複合材料層的金屬氧化物粉體係選自氧化銀、氧化銅或氧化鎳其中一者或多者。
- 一種陶瓷電路板,包括:一基板;及一複合材料層,形成於該基板上,且成分包含混合的金屬氧化物粉體及陶瓷粉體,其中,該複合材料層的表面還顯露一界面層,該界面層包含還原自該金屬氧化物粉體的金屬。
- 如請求項7所述的陶瓷電路板,其中該基板包括:一底板,係為一金屬板;及一陶瓷層,形成於該底板上;其中,該複合材料層係形成於該陶瓷層上。
- 如請求項7或8所述的陶瓷電路板,包括形成於該界面層上的一導電金屬層。
- 如請求項7或8所述的陶瓷電路板,其中該複合材料層的金屬氧化物粉體係選自氧化銀、氧化銅或氧化鎳其中一者或多者。
- 如請求項7或8所述的陶瓷電路板,其中該界面層包含還原自該金屬氧化物粉體低價金屬氧化物及其共晶結構。
- 如請求項9所述的陶瓷電路板,其中該複合材料層的金屬氧化物粉體係選自氧化銀、氧化銅或氧化鎳其中一者或多者。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107103007A TWI662872B (zh) | 2018-01-26 | 2018-01-26 | 陶瓷電路板及其製法 |
JP2018041726A JP6793674B2 (ja) | 2018-01-26 | 2018-03-08 | セラミック回路基板及びその製造方法 |
CN201810220379.5A CN110087400B (zh) | 2018-01-26 | 2018-03-16 | 陶瓷电路板及其制法 |
US15/934,494 US10506711B2 (en) | 2018-01-26 | 2018-03-23 | Ceramic circuit plate and method of making same |
EP18164898.1A EP3518279A1 (en) | 2018-01-26 | 2018-03-29 | Ceramic circuit plate and method of making same |
KR1020180064789A KR102161340B1 (ko) | 2018-01-26 | 2018-06-05 | 세라믹 회로판 및 그 제조 방법 |
US16/685,396 US10757806B2 (en) | 2018-01-26 | 2019-11-15 | Ceramic circuit plate and method of making same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107103007A TWI662872B (zh) | 2018-01-26 | 2018-01-26 | 陶瓷電路板及其製法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI662872B true TWI662872B (zh) | 2019-06-11 |
TW201933962A TW201933962A (zh) | 2019-08-16 |
Family
ID=62001942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107103007A TWI662872B (zh) | 2018-01-26 | 2018-01-26 | 陶瓷電路板及其製法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US10506711B2 (zh) |
EP (1) | EP3518279A1 (zh) |
JP (1) | JP6793674B2 (zh) |
KR (1) | KR102161340B1 (zh) |
CN (1) | CN110087400B (zh) |
TW (1) | TWI662872B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060166537A1 (en) * | 2005-01-27 | 2006-07-27 | Thompson John O | Method of making a patterned metal oxide film |
CN104735915A (zh) * | 2013-12-20 | 2015-06-24 | 台湾立讯精密有限公司 | 绝缘基板上形成导体线路的制造方法 |
TW201534573A (zh) * | 2013-09-30 | 2015-09-16 | Nippon Electric Glass Co | 陶瓷配線基板、陶瓷配線基板用陶瓷生胚片、及陶瓷配線基板用玻璃陶瓷粉末 |
CN107493660A (zh) * | 2016-06-12 | 2017-12-19 | 品翔电通股份有限公司 | 导电配线的制造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3330695A (en) * | 1962-05-21 | 1967-07-11 | First Safe Deposit Nat Bank Of | Method of manufacturing electric circuit structures |
JPS5936993A (ja) * | 1982-08-26 | 1984-02-29 | 株式会社日立製作所 | 配線回路基板とその製造方法 |
JPS62136897A (ja) * | 1985-12-11 | 1987-06-19 | 株式会社東芝 | セラミツク回路基板の製造方法 |
DE3629474A1 (de) * | 1986-08-29 | 1988-03-03 | Licentia Gmbh | Verfahren zum aufbringen erhabener strukturen und danach hergestellter verzoegerungsleitungstraeger einer lauffeldroehre |
JPH0537126A (ja) * | 1991-07-30 | 1993-02-12 | Toshiba Corp | 金属酸化物を用いた配線基板および情報記録媒体 |
JPH05308190A (ja) * | 1992-05-01 | 1993-11-19 | Nec Corp | スルーホールメタルコア基板 |
US5618611A (en) * | 1994-06-30 | 1997-04-08 | Lucent Technologies Inc. | Metallization of ferrites through surface reduction |
DE69531980T2 (de) * | 1994-08-23 | 2004-07-29 | At & T Corp. | Metallisierung von keramischen Materialien durch Auftrag einer haftenden reduzierbaren Schicht |
JPH10107395A (ja) * | 1996-09-30 | 1998-04-24 | Taiyo Yuden Co Ltd | 回路基板とその製造方法 |
US6388230B1 (en) * | 1999-10-13 | 2002-05-14 | Morton International, Inc. | Laser imaging of thin layer electronic circuitry material |
JP4008782B2 (ja) * | 2002-08-23 | 2007-11-14 | 日本特殊陶業株式会社 | 多層配線基板の製造方法 |
JP2004179291A (ja) * | 2002-11-26 | 2004-06-24 | Ibiden Co Ltd | 配線板および配線板の製造方法 |
JP4416080B2 (ja) * | 2003-01-29 | 2010-02-17 | 富士フイルム株式会社 | プリント配線基板形成用インク、プリント配線基板の形成方法及びプリント配線基板 |
US20060000641A1 (en) * | 2004-06-30 | 2006-01-05 | Salama Islam A | Laser metallization for ceramic device |
KR101124102B1 (ko) * | 2009-08-24 | 2012-03-21 | 삼성전기주식회사 | 발광 소자 패키지용 기판 및 이를 포함하는 발광 소자 패키지 |
JP2011097038A (ja) | 2009-10-02 | 2011-05-12 | Ibiden Co Ltd | セラミック配線基板およびその製造方法 |
WO2012155811A1 (en) * | 2011-05-13 | 2012-11-22 | Byd Company Limited | Method for selectively metallizing surface of ceramic substrate, ceramic product and use of ceramic product |
US20140097002A1 (en) * | 2012-10-05 | 2014-04-10 | Tyco Electronics Amp Gmbh | Electrical components and methods and systems of manufacturing electrical components |
US20140097003A1 (en) * | 2012-10-05 | 2014-04-10 | Tyco Electronics Amp Gmbh | Electrical components and methods and systems of manufacturing electrical components |
JP2017110278A (ja) * | 2015-12-18 | 2017-06-22 | 株式会社村田製作所 | 金属層の形成方法 |
-
2018
- 2018-01-26 TW TW107103007A patent/TWI662872B/zh active
- 2018-03-08 JP JP2018041726A patent/JP6793674B2/ja not_active Expired - Fee Related
- 2018-03-16 CN CN201810220379.5A patent/CN110087400B/zh active Active
- 2018-03-23 US US15/934,494 patent/US10506711B2/en active Active
- 2018-03-29 EP EP18164898.1A patent/EP3518279A1/en not_active Withdrawn
- 2018-06-05 KR KR1020180064789A patent/KR102161340B1/ko active IP Right Grant
-
2019
- 2019-11-15 US US16/685,396 patent/US10757806B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060166537A1 (en) * | 2005-01-27 | 2006-07-27 | Thompson John O | Method of making a patterned metal oxide film |
TW201534573A (zh) * | 2013-09-30 | 2015-09-16 | Nippon Electric Glass Co | 陶瓷配線基板、陶瓷配線基板用陶瓷生胚片、及陶瓷配線基板用玻璃陶瓷粉末 |
CN104735915A (zh) * | 2013-12-20 | 2015-06-24 | 台湾立讯精密有限公司 | 绝缘基板上形成导体线路的制造方法 |
CN107493660A (zh) * | 2016-06-12 | 2017-12-19 | 品翔电通股份有限公司 | 导电配线的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20200067992A (ko) | 2020-06-15 |
US10506711B2 (en) | 2019-12-10 |
JP2019129306A (ja) | 2019-08-01 |
CN110087400B (zh) | 2021-04-16 |
KR102161340B1 (ko) | 2020-10-05 |
JP6793674B2 (ja) | 2020-12-02 |
TW201933962A (zh) | 2019-08-16 |
EP3518279A1 (en) | 2019-07-31 |
US20200107438A1 (en) | 2020-04-02 |
CN110087400A (zh) | 2019-08-02 |
US10757806B2 (en) | 2020-08-25 |
US20190239346A1 (en) | 2019-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI498061B (zh) | And a method of manufacturing a conductor line on an insulating substrate | |
Scrantom et al. | LTCC technology: where we are and where we're going. II | |
US20150118391A1 (en) | Thermal management circuit materials, method of manufacture thereof, and articles formed therefrom | |
US20090266599A1 (en) | Circuit board with high thermal conductivity and method for manufacturing the same | |
KR100955451B1 (ko) | 방열 fpcb 및 이의 제조 방법 | |
US20120222888A1 (en) | Pcb with heat dissipation structure and processing methods thereof | |
TW201041093A (en) | Section-difference type ceramics base copper-clad laminate set and manufacturing method thereof | |
JP2011109057A (ja) | 高精密度セラミック基板製造工程 | |
CN103533764A (zh) | 非导电基板上形成导体线路的制造方法 | |
JP2006041230A (ja) | 発光素子用配線基板ならびに発光装置 | |
WO2013142580A1 (en) | Application of dielectric layer and circuit traces on heat sink | |
RU2558323C1 (ru) | Способ металлизации подложки из алюмонитридной керамики | |
TW201248949A (en) | Light emitting diode carrier assemblies and method of fabricating the same | |
US20150188016A1 (en) | Electric conductive heat dissipation substrate | |
TWI662872B (zh) | 陶瓷電路板及其製法 | |
TWI687531B (zh) | 陶瓷電路板及其製法 | |
KR101125752B1 (ko) | 인쇄 회로 기판 및 그 제조 방법 | |
JP2011071554A (ja) | 発光素子用配線基板ならびに発光装置 | |
TW201542078A (zh) | 陶瓷基板散熱結構的製造方法 | |
TW201429009A (zh) | 發光二極體裝置及散熱基板的製造方法 | |
KR101205431B1 (ko) | 구리 코어 구조의 방열 인쇄회로기판 제조방법 | |
CN201673901U (zh) | 一种陶瓷复合基板 | |
TW201644030A (zh) | 複合多層迴路電路基板及其製造方法 | |
KR101306831B1 (ko) | 인쇄 회로 기판 및 그 제조 방법 | |
TWM550956U (zh) | 圖案化線路基板之改良 |