CN110087400A - 陶瓷电路板及其制法 - Google Patents
陶瓷电路板及其制法 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 86
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000002131 composite material Substances 0.000 claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 239000000843 powder Substances 0.000 claims abstract description 61
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 43
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004615 ingredient Substances 0.000 claims abstract description 12
- 230000005496 eutectics Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 174
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical group [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910000431 copper oxide Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- 229910001923 silver oxide Inorganic materials 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 239000011799 hole material Substances 0.000 description 29
- 238000005516 engineering process Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 239000011094 fiberboard Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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Abstract
本发明关于陶瓷电路板及其制法,该陶瓷电路板包括基板及复合材料层。该复合材料层形成于该基板上,且成分包含金属氧化物粉体及陶瓷粉体。其中,该复合材料层的表面还显露界面层,该界面层包含从该金属氧化物粉体还原的金属、低价金属氧化物及其共晶结构。
Description
技术领域
本发明关于一种陶瓷电路板及其制法。
背景技术
现有的陶瓷散热电路板普遍采用直接镀铜基板(DPC)技术,其乃是利用真空溅镀技术(Sputtering)及曝光显影方式在陶瓷基板上刻划出电路图案,具体工艺可参见美国公开第20110079418号专利。
发明内容
本发明提供一种陶瓷电路板的制法,其包括:提供基板;在该基板上形成复合材料层,该复合材料层的成分包含金属氧化物粉体及陶瓷粉体;及以镭射光照射该复合材料层,使得该复合材料层被该镭射光照射到的区域中的金属氧化物粉体还原形成界面层,且该界面层显露于该复合材料层的表面。其中,该界面层包含还原自该金属氧化物粉体的金属,或是包含还原自该金属氧化物粉体的金属、低价金属氧化物及其共晶结构。
在一实施例中,本发明上述基板的制作步骤包括:提供底板,该底板为金属板;及于该底板上形成陶瓷层;其中,该复合材料层形成于该陶瓷层上。
在一实施例中,本发明上述制法包括:在该界面层上形成导电金属层。
本发明还提供一种陶瓷电路板,其包括基板及复合材料层,该复合材料层形成于该基板上,且成分包含金属氧化物粉体及陶瓷粉体。其中,该复合材料层的表面还显露界面层,该界面层是由该复合材料层的金属氧化物粉体还原形成。其中,该界面层可包含还原自该金属氧化物粉体的金属,或是包含还原自该金属氧化物粉体的金属、低价金属氧化物及其共晶结构。
在一实施例中,本发明的陶瓷电路板的上述基板包括底板及陶瓷层,该底板为金属板;该陶瓷层形成于该底板上;其中,该复合材料层形成于该陶瓷层上。
在一实施例中,本发明的陶瓷电路板包括形成于该界面层上的导电金属层。
本发明提供另一种陶瓷电路板,其包括:底板,为金属板,且具有贯穿孔;上陶瓷层,形成于该底板的上表面;下陶瓷层,形成于该底板的下表面;孔内陶瓷层,形成于该贯穿孔的壁面,且连接该上、下陶瓷层;上复合材料层,形成于该上陶瓷层的表面,且成分包含金属氧化物粉体及陶瓷粉体,其中,该上复合材料层的表面还显露上界面层,该上界面层是由该上复合材料层的金属氧化物粉体还原形成且包含还原自该上复合材料层的金属氧化物粉体的金属;下复合材料层,形成于该下陶瓷层的表面,且成分包含金属氧化物粉体及陶瓷粉体,其中,该下复合材料层的表面还显露下界面层,该下界面层是由该下复合材料层的金属氧化物粉体还原形成且包含还原自该下复合材料层的金属氧化物粉体的金属;孔内复合材料层,形成于该孔内陶瓷层的表面,且成分包含金属氧化物粉体及陶瓷粉体,其中,该孔内复合材料层连接该上、下复合材料层,且该孔内复合材料层的表面还显露孔内界面层,该孔内界面层还原自该孔内复合材料层的金属氧化物粉体且包含还原自该孔内复合材料层的金属氧化物粉体的金属,并连接该上、下界面层;上导电金属层,形成于该上界面层的表面;下导电金属层,形成于该下界面层的表面;及孔内导电金属层,形成于该孔内界面层的表面,且连接该上、下导电金属层。
在一实施例中,本发明上述金属氧化物粉体可均选自氧化银、氧化铜或氧化镍其中一种或多种。
相对于现有技术,利用本发明上述制法可快速制作出上述陶瓷电路板,且其制作过程仅使用镭射光照射上述复合材料层就能获得可供电镀导电金属的界面层,不需使用设备成本昂贵且制作速度缓慢的真空溅镀技术。
附图说明
图1的断面示意图显示本发明的一种陶瓷电路板100及其制法的一个较佳实施例。
图2显示图1中(C)的俯视图。
图3是图1中(D)的俯视图。
图4的断面示意图显示本发明陶瓷电路板制法的另一较佳实施例。
图5是图4中(A)的俯视图。
图6是图4中(C)的俯视图。
图7显示本发明的另一种陶瓷电路板100a的部分断面示意图。
图8显示本发明的再一种陶瓷电路板100b的部分断面示意图。
具体实施方式
图1的部分断面示意图用于说明本发明陶瓷电路板100的制法的一个实施例,该制法包括如下步骤:
首先,如图1中(A)所示,提供基板10。基板10材料不限,例如基板10可为金属板、非金属板、陶瓷板、或多层板。在本实施例中,基板10包括底板1及形成在底板1上的陶瓷层2,但不以此为限。其中,底板1的厚度较佳约在0.3mm~1.5mm,其可为金属板、铝板、铝合金板、铜板、铜合金板、塑料板、电木板、聚酯纤维板(Polyester,PET)、聚酰亚胺板(Polyimide,PI)……等等。陶瓷层2的材料可选自氮化硼、氮化铝、氧化铝及碳化硅的其中一种或多种,其厚度约在10μm至30μm之间,并可视需要添加有无机导热粉体(例如:石墨炭),以提其高其散热性。在本实施例中,是将陶瓷粉体与液态树脂(例如:硅氧树脂、硅基树脂或环氧树脂)均匀混合之后,再喷涂或淋涂于底板1的表面(例如顶面),然后加热(大约200℃),以形成前述的陶瓷层2,此陶瓷层2具有耐高电压、电绝缘、及散热等特性。
接着,如图1中(B)所示,于基板10上形成复合材料层3a,复合材料层3a的成分包含金属氧化物粉体及陶瓷粉体。在本实施例中,是将金属氧化物粉体与陶瓷粉体混合后,经过喷雾干燥制成纳米级混合粉体,然后将该纳米级混合粉体与液态树脂(例如:硅氧树脂、硅基树脂或环氧树脂)均匀混合之后,再喷涂或淋涂于基板10的陶瓷层2的表面(例如顶面),然后加热(大约200℃),以形成前述复合材料层3a。其中,金属氧化物可选自氧化银、氧化铜或氧化镍其中一种或多种,但不以此为限。至于复合材料层3a所使用的陶瓷粉体则可相同或近似于上述陶瓷层2所使用陶瓷粉体。
续参阅图1中(C),以镭射光的照射复合材料层3a,使得该复合材料层3a被该镭射光照射到的区域中的金属氧化物粉体还原形成可镀上导电金属的界面层3,且该界面层3显露于该复合材料层3a的表面。其中,被该镭射光照射到的区域可涵盖复合材料层3a的全部表面,也可以只涵盖部分表面。本实施例中,复合材料层3a只有部分表面被该镭射光照射到而还原成为界面层3,其余表面则因未被该镭射光照射到而仍为复合材料层3a。此复合材料层3a因仍含有陶瓷成分,故仍具有耐高电压、电绝缘、及散热等特性,并能牢固地接合于上述陶瓷层2。
在本实施例中,该镭射光的波长为1064nm,然而,针对其它不同的金属氧化物材料得选用其他不同波段的镭射光,例如波长为266nm、532nm、10.6μm的镭射光。另外,该镭射光可采取扫瞄方式来照射复合材料层3a,例如,根据预先设计的图案(例如电路图案)控制该镭射光去扫描复合材料层3a,以获得形状相同于该图案的界面层3,例如两个具有图2所示形状的界面层3。
在被该镭射光照射到的区域中,金属氧化物会被该镭射光激发而还原形成金属、低价金属氧化物及其共晶结构,此即前述的界面层3。其中,所述的金属还原现象主要是利用某些纳米级的金属原子具有受光激发而脱氧还原的特性。举例而言,当复合材料层3a中的金属氧化物选择氧化铜(CuO)时,由于纳米铜原子具有受光激发还原的特性,因此,氧化铜受光激发后会脱氧还原成为零价铜(Cu)、氧化亚铜(CuO2)及其共晶结构。
较佳地,如图1中(D)及图3所示,本发明制法还包括在上述界面层3上形成导电金属层4。其中,导电金属层4的材料可选自铜、银、铟、镍或其合金。在本实施例中,导电金属层4是以电镀方式形成的。
在另一实施例中,如图4中(A)及图5所示,当复合材料层3a的全部表面都被该镭射光照射时,复合材料层3a的表面将全部变成上述的界面层3。接着,如图4中(B)所示,在经过电镀之后,界面层3的全部表面即形成一层导电金属层4。然后,如图4中(C)及图6所示,利用现有的印刷电路板制作技术,将导电金属层4制作成想要的图案(例如电路图案)。
在图1至图6所示的实施例中,本发明制法是实施于底板1的上表面(或下表面),故所得到的陶瓷电路板100为单面电路板,上述导电金属层4即为该单面电路板上的电路。
然而,如图7所示,当本发明制法实施于底板1的该上表面及下表面时,则所得到的陶瓷电路板100a包括上述底板1、上陶瓷层20及下陶瓷层21、上复合材料层30a及下复合材料层31a(两者相同于上述复合材料层3a)、上界面层300及下界面层301(两者相同于上述界面层3),较佳还包括上导电金属层400及下导电金属层401。简言之,陶瓷电路板100a为双面电路板,上导电金属层400及下导电金属层401即分别为该双面电路板上面及下面的电路。
再者,如图8所示,当底板1具有至少一个贯穿孔5,且本发明制法实施于底板1的上、下表面及贯穿孔5时,所得到的陶瓷电路板100b不但具有图7所示的层次构造,还包括该贯穿孔5、形成于贯穿孔5的壁面上的孔内陶瓷层22、及形成于孔内陶瓷层22上的孔内复合材料层32a(相同于上述复合材料层3a)。孔内陶瓷层22连接上、下陶瓷层20及21,孔内复合材料层32a连接上、下复合材料层30a及31a。孔内复合材料层32a的表面还显露孔内界面层302。孔内界面层302还原自孔内复合材料层32a的金属氧化物粉体,且连接该上、下界面层300及301。较佳还包括至少孔内导电金属层402,其形成于孔内界面层302上且连接上、下导电金属层400及401。简言之,陶瓷电路板100b为具有导电贯穿孔的双面电路板,上导电金属层400及下导电金属层401即分别为该双面电路板上面及下面的电路,该两电路通过孔内导电金属层402构成电性连接。
另外,可于底板1的底面及/或顶面形成一或多道预切沟槽(V-CUT,图中未示),可方便后续将所制作的陶瓷电路板100,100a或100b分割成数块。
从上述说明可知,利用本发明方法可快速制作出单面或双面的陶瓷电路板,且其制作过程仅使用镭射光照射上述复合材料层3a就能获得可供电镀导电金属的界面层3,不需使用设备成本昂贵且制作速度缓慢的真空溅镀技术。
Claims (12)
1.一种陶瓷电路板的制法,其包括如下步骤:
提供基板;
在该基板上形成复合材料层,该复合材料层的成分包含金属氧化物粉体及陶瓷粉体;及
以镭射光照射该复合材料层,使得该复合材料层被该镭射光照射到的区域中的金属氧化物粉体还原形成界面层,该界面层显露于该复合材料层的表面且包含还原自该金属氧化物粉体的金属。
2.如权利要求1所述的制法,其中,该基板的制作步骤包括:
提供底板,该底板为金属板;及
于该底板上形成陶瓷层;
其中,该复合材料层形成于该陶瓷层上。
3.如权利要求1或2所述的制法,其中该复合材料层的金属氧化物粉体选自氧化银、氧化铜或氧化镍其中一种或多种。
4.如权利要求3所述的制法,其中该界面层包含还原自该金属氧化物粉体的该金属、低价金属氧化物及其共晶结构。
5.如权利要求1至4中任一项所述的制法,其包括:在该界面层上形成导电金属层。
6.一种陶瓷电路板,其包括:
基板;及
复合材料层,形成于该基板上,且成分包含金属氧化物粉体及陶瓷粉体,其中,该复合材料层的表面还显露界面层,该界面层是由该复合材料层的金属氧化物粉体还原形成,且包含还原自该金属氧化物粉体的金属。
7.如权利要求6所述的陶瓷电路板,其中该基板包括:
底板,为金属板;及
陶瓷层,形成于该底板上;
其中,该复合材料层形成于该陶瓷层上。
8.如权利要求6或7所述的陶瓷电路板,其中该复合材料层的金属氧化物粉体选自氧化银、氧化铜或氧化镍其中一种或多种。
9.如权利要求6或7所述的陶瓷电路板,其中该界面层包含还原自该金属氧化物粉体的该金属、低价金属氧化物及其共晶结构。
10.如权利要求6至9中任一项所述的陶瓷电路板,其包括形成于该界面层上的导电金属层。
11.一种陶瓷电路板,其包括:
底板,为金属板,且具有贯穿孔;
上陶瓷层,形成于该底板的上表面;
下陶瓷层,形成于该底板的下表面;
孔内陶瓷层,形成于该贯穿孔的壁面,且连接该上、下陶瓷层;
上复合材料层,形成于该上陶瓷层的表面,且成分包含金属氧化物粉体及陶瓷粉体,其中,该上复合材料层的表面还显露上界面层,该上界面层是由该上复合材料层的金属氧化物粉体还原形成且包含还原自该上复合材料层的金属氧化物粉体的金属;
下复合材料层,形成于该下陶瓷层的表面,且成分包含金属氧化物粉体及陶瓷粉体,其中,该下复合材料层的表面还显露下界面层,该下界面层是由该下复合材料层的金属氧化物粉体还原形成且包含还原自该下复合材料层的金属氧化物粉体的金属;
孔内复合材料层,形成于该孔内陶瓷层的表面,且成分包含金属氧化物粉体及陶瓷粉体,其中,该孔内复合材料层连接该上、下复合材料层,且该孔内复合材料层的表面还显露孔内界面层,该孔内界面层还原自该孔内复合材料层的金属氧化物粉体且包含还原自该孔内复合材料层的金属氧化物粉体的金属,并连接该上、下界面层;
上导电金属层,形成于该上界面层的表面;
下导电金属层,形成于该下界面层的表面;及
孔内导电金属层,形成于该孔内界面层的表面,且连接该上、下导电金属层。
12.如权利要求11所述的陶瓷电路板,其中所述的金属氧化物粉体均选自氧化银、氧化铜或氧化镍其中一种或多种。
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CN107493660A (zh) * | 2016-06-12 | 2017-12-19 | 品翔电通股份有限公司 | 导电配线的制造方法 |
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2018
- 2018-01-26 TW TW107103007A patent/TWI662872B/zh active
- 2018-03-08 JP JP2018041726A patent/JP6793674B2/ja active Active
- 2018-03-16 CN CN201810220379.5A patent/CN110087400B/zh active Active
- 2018-03-23 US US15/934,494 patent/US10506711B2/en active Active
- 2018-03-29 EP EP18164898.1A patent/EP3518279A1/en not_active Withdrawn
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Patent Citations (3)
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US4797530A (en) * | 1985-12-11 | 1989-01-10 | Kabushiki Kaisha Toshiba | Ceramic circuit substrates and methods of manufacturing same |
DE3629474A1 (de) * | 1986-08-29 | 1988-03-03 | Licentia Gmbh | Verfahren zum aufbringen erhabener strukturen und danach hergestellter verzoegerungsleitungstraeger einer lauffeldroehre |
US5725938A (en) * | 1994-08-23 | 1998-03-10 | Lucent Technologies Inc. | Metallization of ceramic through application of an adherent reducible layer |
Also Published As
Publication number | Publication date |
---|---|
US20200107438A1 (en) | 2020-04-02 |
US10757806B2 (en) | 2020-08-25 |
KR102161340B1 (ko) | 2020-10-05 |
JP2019129306A (ja) | 2019-08-01 |
JP6793674B2 (ja) | 2020-12-02 |
CN110087400B (zh) | 2021-04-16 |
EP3518279A1 (en) | 2019-07-31 |
TWI662872B (zh) | 2019-06-11 |
TW201933962A (zh) | 2019-08-16 |
US10506711B2 (en) | 2019-12-10 |
US20190239346A1 (en) | 2019-08-01 |
KR20200067992A (ko) | 2020-06-15 |
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