JP6793674B2 - セラミック回路基板及びその製造方法 - Google Patents
セラミック回路基板及びその製造方法 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims description 140
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000002131 composite material Substances 0.000 claims description 107
- 229910052751 metal Inorganic materials 0.000 claims description 76
- 239000002184 metal Substances 0.000 claims description 76
- 239000000843 powder Substances 0.000 claims description 70
- 229910044991 metal oxide Inorganic materials 0.000 claims description 53
- 150000004706 metal oxides Chemical class 0.000 claims description 53
- 239000011148 porous material Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 14
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 12
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 9
- 230000005496 eutectics Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000005751 Copper oxide Substances 0.000 claims description 7
- 229910000431 copper oxide Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 6
- 229910001923 silver oxide Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229920000728 polyester Polymers 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims 3
- 229920001721 polyimide Polymers 0.000 claims 3
- 150000002989 phenols Chemical class 0.000 claims 2
- 241001124569 Lycaenidae Species 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- 235000014987 copper Nutrition 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
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- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
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- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
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Description
100、100a、100b セラミック回路基板
10 基板
2 セラミック層
20 上セラミック層
21 下セラミック層
22 孔内セラミック層
3 界面層
3a 複合材料層
300 上界面層
301 下界面層
30a 上複合材料層
31a 下複合材料層
32a 孔内複合材料層
4 導電金属層
400 上導電金属層
401 下導電金属層
402 孔内導電金属層
5 貫通孔
Claims (12)
- セラミック回路基板の製造方法であって、
アルミニウム、アルミニウム合金、銅、銅合金を含む金属、フェノール、ポリエステル、ポリイミドを含む樹脂からなる群から選択された材料で形成された基板を用意する工程と、
前記基板上に、セラミック粉末及び樹脂を含むセラミック層を形成する工程と、
前記セラミック層上に、金属酸化物粉末、セラミック粉末及び樹脂を含む複合材料層を形成する工程と、
前記複合材料層が、レーザー光線が照射されて前記複合材料層の表面から前記複合材料層の内部までの領域に形成される界面層と、前記レーザー光線が照射されていない部分とを有するように、前記複合材料層に前記レーザー光線を照射する工程と、
前記界面層上に導電金属層を形成する工程と、
を有し、
前記セラミック層の前記セラミック粉末及び前記複合材料層の前記セラミック粉末は、窒化ホウ素、窒化アルミニウム、酸化アルミニウム、または炭化ケイ素から選択されたいずれか1つ、または複数であり、
前記界面層の成分は、前記金属酸化物粉末から還元された金属を含み、
前記レーザー光線が照射されていない部分は、前記セラミック層の全体を覆うとともに、前記複合材料層と同じ成分を有することを特徴とする、セラミック回路基板の製造方法。 - 前記複合材料層の金属酸化物粉末が、酸化銀、酸化銅、または酸化ニッケルから選択されたいずれか1つ、または複数であることを特徴とする、請求項1に記載のセラミック回路基板の製造方法。
- 前記界面層が、低原子価金属酸化物及びその共晶構造を含むことを特徴とする、請求項2に記載のセラミック回路基板の製造方法。
- セラミック回路基板であって、
アルミニウム、アルミニウム合金、銅、銅合金を含む金属、フェノール、ポリエステル、ポリイミドを含む樹脂からなる群から選択された材料で形成された基板と、
前記基板上に形成され、セラミック粉末及び樹脂を含むセラミック層と、
前記セラミック層上に形成され、かつ金属酸化物粉末、樹脂及びセラミック粉末を含む複合材料層と、を有し、
前記複合材料層は、レーザー光線の照射によって、前記複合材料層の表面から前記複合材料層の内部までの領域に形成された界面層と、前記レーザー光線が照射されていない部分とを有し、
前記セラミック層の前記セラミック粉末及び前記複合材料層の前記セラミック粉末は、窒化ホウ素、窒化アルミニウム、酸化アルミニウム、または炭化ケイ素から選択されたいずれか1つ、または複数であり、
前記セラミック回路基板は、前記界面層上に形成された導電金属層を更に有し、
前記界面層の成分は、前記金属酸化物粉末から還元された金属を含むとともに、前記レーザー光線が照射されていない部分は、前記セラミック層の全体を覆うとともに、前記複合材料層と同じ成分を有することを特徴とする、セラミック回路基板。 - 前記複合材料層の金属酸化物粉末が、酸化銀、酸化銅、または酸化ニッケルから選択されたいずれか1つ、または複数であることを特徴とする、請求項4に記載のセラミック回路基板。
- 前記界面層が、低原子価金属酸化物及びその共晶構造を含むことを特徴とする、請求項4又は5に記載のセラミック回路基板。
- セラミック回路基板であって、底板と、上セラミック層と、下セラミック層と、孔内セラミック層と、上複合材料層と、下複合材料層と、孔内複合材料層と、上導電金属層と、
下導電金属層と、孔内導電金属層と、を含み、
前記底板が金属板であって、かつ貫通孔を備え、
前記上セラミック層が前記底板の上表面に形成され、
前記下セラミック層が前記底板の下表面に形成され、
前記孔内セラミック層が前記貫通孔の壁面に形成され、かつ前記上セラミック層と前記下セラミック層に連接され、
前記上複合材料層が、前記上セラミック層の表面に形成され、かつ成分が金属酸化物粉末とセラミック粉末を含み、前記上複合材料層の表面に上界面層が露出され、前記上界面層が前記上複合材料層の金属酸化物粉末から還元された金属を含み、
前記下複合材料層が、前記下セラミック層の表面に形成され、かつ成分が金属酸化物粉末とセラミック粉末を含み、前記下複合材料層の表面に下界面層が露出され、前記下界面層が前記下複合材料層の金属酸化物粉末から還元された金属を含み、
前記孔内複合材料層が、前記孔内セラミック層の表面に形成され、かつ成分が金属酸化物粉末とセラミック粉末を含み、前記孔内複合材料層が前記上複合材料層と前記下複合材料層に連接され、かつ前記孔内複合材料層の表面に孔内界面層が露出され、前記孔内界面層が前記孔内複合材料層の金属酸化物粉末から還元された金属を含み、かつ前記上界面層と前記下界面層に連接され、
前記上導電金属層が、前記上界面層の表面に形成され、
前記下導電金属層が、前記下界面層の表面に形成され、
前記孔内導電金属層が、前記孔内界面層の表面に形成され、かつ前記上導電金属層と前記下導電金属層に連接されることを特徴とする、セラミック回路基板。 - 前記上複合材料層、前記下複合材料層及び前記孔内複合材料層の少なくとも1つの前記金属酸化物粉末が、酸化銀、酸化銅、または酸化ニッケルから選択されたいずれか1つ、または複数であることを特徴とする、請求項7に記載のセラミック回路基板。
- 貫通孔を備え、アルミニウム、アルミニウム合金、銅、銅合金を含む金属、フェノール、ポリエステル、ポリイミドを含む樹脂からなる群から選択された材料で形成された基板と、
前記基板の上表面に形成され、セラミック粉末及び樹脂を含む上セラミック層と、
前記基板の下表面に形成され、セラミック粉末及び樹脂を含む下セラミック層と、
前記基板の前記貫通孔の壁面に形成されて、前記上セラミック層と前記下セラミック層に連接され、セラミック粉末及び樹脂を含む孔内セラミック層と、
前記上セラミック層の上表面に形成され、金属酸化物粉末、樹脂及びセラミック粉末を含み、レーザー光線が照射された上界面層と、レーザー光線が照射されていない上部分とを備えた上複合材料層と、
前記下セラミック層の下表面に形成され、金属酸化物粉末、樹脂及びセラミック粉末を含み、レーザー光線が照射された下界面層と、レーザー光線が照射されていない下部分とを備えた下複合材料層と、
前記孔内セラミック層上に形成されて、前記上複合材料層と前記下複合材料層に連接され、金属酸化物粉末、樹脂及びセラミック粉末を含み、レーザー光線が照射された孔内界面層と、レーザー光線が照射されていない内部分とを備えた孔内複合材料層と、を有し、
前記上界面層、前記孔内界面層及び前記下界面層は、それぞれの前記金属酸化物粉末から還元された金属を含み、
前記上部分は、前記上セラミック層の全体を覆い、前記上複合材料層と同じ成分を有し、
前記内部分は、前記孔内セラミック層の全体を覆い、前記孔内複合材料層と同じ成分を有し、
前記下部分は、前記下セラミック層の全体を覆い、前記下複合材料層と同じ成分を有することを特徴とする、セラミック回路基板。 - 前記上界面層は、前記上複合材料層の金属酸化物粉末から還元された低原子価金属酸化物及び共晶構造を有し、
前記下界面層は、前記下複合材料層の金属酸化物粉末から還元された低原子価金属酸化物及び共晶構造を有し、
前記孔内界面層は、前記孔内複合材料層の金属酸化物粉末から還元された低原子価金属酸化物及び共晶構造を有することを特徴とする、請求項9に記載のセラミック回路基板。 - 前記上複合材料層、前記下複合材料層及び前記孔内複合材料層のそれぞれの前記金属酸化物粉末は、酸化銀、酸化銅及び酸化ニッケルからなる群から選択された材料を有することを特徴とする、請求項9に記載のセラミック回路基板。
- 前記上界面層の上表面に形成された上導電金属層と、
前記下界面層の下表面に形成された下導電金属層と、
前記孔内界面層上に形成され、前記上導電金属層と前記下導電金属層に連接された孔内導電金属層と、
を有することを特徴とする、請求項9に記載のセラミック回路基板。
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JPS5936993A (ja) * | 1982-08-26 | 1984-02-29 | 株式会社日立製作所 | 配線回路基板とその製造方法 |
JPS62136897A (ja) * | 1985-12-11 | 1987-06-19 | 株式会社東芝 | セラミツク回路基板の製造方法 |
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US5618611A (en) * | 1994-06-30 | 1997-04-08 | Lucent Technologies Inc. | Metallization of ferrites through surface reduction |
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US6388230B1 (en) * | 1999-10-13 | 2002-05-14 | Morton International, Inc. | Laser imaging of thin layer electronic circuitry material |
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US20060000641A1 (en) * | 2004-06-30 | 2006-01-05 | Salama Islam A | Laser metallization for ceramic device |
US7381633B2 (en) * | 2005-01-27 | 2008-06-03 | Hewlett-Packard Development Company, L.P. | Method of making a patterned metal oxide film |
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