JP2012178604A - 発光素子パッケージ - Google Patents
発光素子パッケージ Download PDFInfo
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- JP2012178604A JP2012178604A JP2012112171A JP2012112171A JP2012178604A JP 2012178604 A JP2012178604 A JP 2012178604A JP 2012112171 A JP2012112171 A JP 2012112171A JP 2012112171 A JP2012112171 A JP 2012112171A JP 2012178604 A JP2012178604 A JP 2012178604A
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- Prior art keywords
- light emitting
- emitting element
- emitting device
- light
- electrode
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 66
- 238000005192 partition Methods 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000000945 filler Substances 0.000 claims description 28
- 229920000642 polymer Polymers 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 description 75
- 239000010410 layer Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 38
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000010931 gold Substances 0.000 description 10
- 239000004593 Epoxy Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000006089 photosensitive glass Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 Gallium nitride (GaN) compound Chemical class 0.000 description 1
- 229910020658 PbSn Inorganic materials 0.000 description 1
- 101150071746 Pbsn gene Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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Abstract
【解決手段】本発明の一態様に係る発光素子パッケージは、電極と、電極上に配置された発光素子と、発光素子を取り囲む蛍光体層と、電極上に配置され、発光素子の周囲に位置する隔壁とを備え、蛍光体層は、隔壁内に配置された蛍光体材料を含み、当該隔壁は発光素子から離隔されている。
【選択図】図22
Description
[第1実施例]
[第2実施例]
[第3実施例]
[第4実施例]
[第5実施例]
[第6実施例]
[第7実施例]
[第8実施例]
隔壁300は、基板100の前面に感光性ポリマーをコーティングし、写真エッチング工程を用いて隔壁300を形成すべき部分の感光性ポリマーを残留させ、それ以外の領域の感光性ポリマーを除去するようにして形成しても良く、ガラスのような投光性に優れた物質を隔壁形態に製造して基板100に接合して形成しても良い。
[第9実施例]
[第10実施例]
本発明の保護範囲に属する。
Claims (11)
- 電極と、
前記電極上に配置された発光素子と、
前記発光素子を取り囲む蛍光体層と、
前記電極上に配置され、前記発光素子の周囲に位置する隔壁と
を備え、
前記蛍光体層は、前記隔壁内に配置された蛍光体材料を含み、前記隔壁は前記発光素子から離隔されている、発光素子パッケージ。 - パッケージボディをさらに備え、前記パッケージボディは凹部を有する、請求項1記載の発光素子パッケージ。
- 前記発光素子は前記凹部内に配置されている、請求項2に記載の発光素子パッケージ。
- 前記隔壁は、前記凹部内に配置されている、請求項3に記載の発光素子パッケージ。
- 前記隔壁は、透光性フォトレジスト、感光性ポリマー、及びがラスのうちのいずれか一つを含む、請求項4に記載の発光素子パッケージ。
- 前記発光素子の上面に配置された蛍光体層の厚さは、前記発光素子の側面に配置された蛍光体層の厚さとが実質的に同一である、請求項5に記載の発光素子パッケージ。
- 前記蛍光体層は、蛍光体材料を含む充填材で構成されている、請求項6に記載の発光素子パッケージ。
- 前記隔壁は、前記発光素子の上側面と前記隔壁の上部との間に高さの差を有し、前記高さの差は前記発光素子の側面と前記隔壁との間の距離と実質的に同一である、請求項7に記載の発光素子パッケージ。
- 前記電極は、前記パッケージボディの上面の上の上部電極と、前記パッケージボディの下面の上の下部電極とを有する、請求項8に記載の発光素子パッケージ。
- 前記上部電極と前記下部電極が、前記パッケージボディに形成された貫通孔を介して互いに連結されることを特徴とする、請求項9に記載の発光素子パッケージ。
- 前記凹部は、底面及び側面を有し、前記上部電極は、前記底面から前記側面まで延在する、請求項10に記載の発光素子パッケージ。
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KR20060078635A KR100845864B1 (ko) | 2006-08-21 | 2006-08-21 | 발광 소자 패키지 및 그 제조방법 |
KR10-2006-0130114 | 2006-12-19 | ||
KR20060130114A KR100866879B1 (ko) | 2006-12-19 | 2006-12-19 | 발광 소자 패키지 및 그 제조방법 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014135521A (ja) * | 2006-08-08 | 2014-07-24 | Lg Electronics Inc | 発光素子パッケージ |
KR101823570B1 (ko) | 2012-10-22 | 2018-01-30 | 센서 일렉트로닉 테크놀로지, 인크 | 2 단자 패키징 |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8283683B2 (en) * | 2006-11-07 | 2012-10-09 | Opto Tech Corporation | Chip-bonding light emitting diode chip |
WO2008151009A1 (en) * | 2007-05-31 | 2008-12-11 | Lumination Llc | Environmentally robust lighting devices and methods of manufacturing same |
CN100483762C (zh) * | 2008-02-25 | 2009-04-29 | 鹤山丽得电子实业有限公司 | 一种发光二极管器件的制造方法 |
CN101577300A (zh) * | 2008-05-08 | 2009-11-11 | 先进开发光电股份有限公司 | 发光二极管及其封装方法 |
KR100982989B1 (ko) * | 2008-05-19 | 2010-09-17 | 삼성엘이디 주식회사 | 발광 다이오드 패키지 |
TWI475718B (zh) * | 2008-05-21 | 2015-03-01 | Advanced Optoelectronic Tech | 發光二極體及其封裝方法 |
US20100117106A1 (en) * | 2008-11-07 | 2010-05-13 | Ledengin, Inc. | Led with light-conversion layer |
KR101515426B1 (ko) * | 2008-11-11 | 2015-04-27 | 삼성디스플레이 주식회사 | 백라이트 어셈블리, 백라이트 어셈블리를 포함하는 액정 표시 장치, 및 이들의 제조 방법 |
KR101020993B1 (ko) | 2009-03-10 | 2011-03-09 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
KR101081055B1 (ko) * | 2009-07-24 | 2011-11-07 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
KR101124102B1 (ko) * | 2009-08-24 | 2012-03-21 | 삼성전기주식회사 | 발광 소자 패키지용 기판 및 이를 포함하는 발광 소자 패키지 |
TW201110430A (en) * | 2009-09-04 | 2011-03-16 | yi-zhang Chen | Heat dissipation substrate of light-emitting diode and its manufacturing method thereof |
DE102009051746A1 (de) * | 2009-09-30 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
TWI403005B (zh) * | 2009-10-12 | 2013-07-21 | Intematix Technology Ct Corp | 發光二極體及其製作方法 |
KR101114150B1 (ko) * | 2009-10-19 | 2012-03-09 | 엘지이노텍 주식회사 | 발광 소자 |
JP5526712B2 (ja) * | 2009-11-05 | 2014-06-18 | 豊田合成株式会社 | 半導体発光素子 |
DE102009053064A1 (de) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements |
KR101276333B1 (ko) * | 2009-11-30 | 2013-06-18 | 한국전자통신연구원 | 3차원 인터커넥션 구조 및 그 제조 방법 |
KR101186648B1 (ko) | 2009-12-21 | 2012-09-28 | 서울반도체 주식회사 | Led 패키지 및 그의 제조 방법 |
KR20110080318A (ko) * | 2010-01-05 | 2011-07-13 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
JP5882910B2 (ja) | 2010-01-19 | 2016-03-09 | エルジー イノテック カンパニー リミテッド | パッケージおよびその製造方法 |
KR20170091167A (ko) * | 2010-02-09 | 2017-08-08 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
KR20110094996A (ko) * | 2010-02-18 | 2011-08-24 | 엘지이노텍 주식회사 | 발광소자 패키지, 그 제조방법 및 조명시스템 |
US8858022B2 (en) | 2011-05-05 | 2014-10-14 | Ledengin, Inc. | Spot TIR lens system for small high-power emitter |
US8993358B2 (en) | 2011-12-28 | 2015-03-31 | Ledengin, Inc. | Deposition of phosphor on die top by stencil printing |
US8354745B2 (en) * | 2010-04-20 | 2013-01-15 | Intellectual Discovery Co., Ltd. | Electronic assembly |
TWI456798B (zh) * | 2010-04-23 | 2014-10-11 | Formosa Epitaxy Inc | 發光裝置之製造方法 |
WO2011145794A1 (ko) | 2010-05-18 | 2011-11-24 | 서울반도체 주식회사 | 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법 |
JP5775375B2 (ja) * | 2010-07-27 | 2015-09-09 | 日東電工株式会社 | 発光ダイオード装置の製造方法 |
US20120068218A1 (en) * | 2010-09-17 | 2012-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermally efficient packaging for a photonic device |
TWI487145B (zh) * | 2010-09-17 | 2015-06-01 | Everlight Electronics Co Ltd | 用於一微型投影系統之發光二極體裝置 |
CN102412359B (zh) * | 2010-09-21 | 2018-12-07 | 亿光电子(中国)有限公司 | 用于一微型投影系统的发光二极管装置 |
US20120113621A1 (en) * | 2010-11-10 | 2012-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Batwing beam based led and backlight module using the same |
JP5641334B2 (ja) * | 2011-01-26 | 2014-12-17 | Nltテクノロジー株式会社 | 照明装置及び液晶表示装置 |
KR101761834B1 (ko) | 2011-01-28 | 2017-07-27 | 서울바이오시스 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
CN102738353A (zh) * | 2011-04-12 | 2012-10-17 | 国碁电子(中山)有限公司 | Led封装结构 |
KR101237566B1 (ko) | 2011-07-20 | 2013-02-26 | 삼성전기주식회사 | 전력 모듈 패키지 및 그 제조방법 |
KR101945532B1 (ko) * | 2011-08-16 | 2019-02-07 | 루미리즈 홀딩 비.브이. | 슬롯에 형성된 반사 벽을 갖는 led 혼합 챔버 |
ITMI20111777A1 (it) * | 2011-09-30 | 2013-03-31 | St Microelectronics Srl | Sistema elettronico per saldatura ad onda |
CN102403422A (zh) * | 2011-11-17 | 2012-04-04 | 深圳市天电光电科技有限公司 | 一种led封装结构的加工方法及led封装结构 |
US8900892B2 (en) | 2011-12-28 | 2014-12-02 | Ledengin, Inc. | Printing phosphor on LED wafer using dry film lithography |
CN103199172B (zh) * | 2012-01-10 | 2015-10-07 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
CN103258920A (zh) * | 2012-02-17 | 2013-08-21 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
KR101318145B1 (ko) * | 2012-03-29 | 2013-10-15 | 크루셜텍 (주) | 엘이디 패키지 |
DE102013202904A1 (de) * | 2013-02-22 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zu seiner Herstellung |
US8847261B1 (en) | 2013-03-14 | 2014-09-30 | Cooledge Lighting Inc. | Light-emitting devices having engineered phosphor elements |
WO2014150263A1 (en) * | 2013-03-15 | 2014-09-25 | Ledengin, Inc. | Printing phosphor on led wafer using dry film lithography |
US9234801B2 (en) | 2013-03-15 | 2016-01-12 | Ledengin, Inc. | Manufacturing method for LED emitter with high color consistency |
SG10201705797UA (en) * | 2013-09-10 | 2017-08-30 | Heptagon Micro Optics Pte Ltd | Compact opto-electronic modules and fabrication methods for such modules |
WO2015093593A1 (ja) * | 2013-12-19 | 2015-06-25 | ローム株式会社 | 電子装置 |
CN103855280B (zh) * | 2014-01-26 | 2018-05-18 | 上海瑞丰光电子有限公司 | 一种led晶片级封装方法 |
KR20150096198A (ko) * | 2014-02-14 | 2015-08-24 | 삼성전자주식회사 | 발광 소자 패키지 및 그 제조 방법 |
CN105090902A (zh) * | 2014-05-06 | 2015-11-25 | 奇想创造事业股份有限公司 | 安装面具有隔槽的塑料灯座及具有该灯座的塑料灯泡 |
CN104638090B (zh) * | 2014-12-18 | 2018-03-06 | 上海大学 | 倒装led封装模组 |
DE102016106896A1 (de) * | 2016-04-14 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauteil |
JP2016189488A (ja) * | 2016-07-07 | 2016-11-04 | 日亜化学工業株式会社 | 発光装置 |
TWI610403B (zh) | 2017-03-03 | 2018-01-01 | 矽品精密工業股份有限公司 | 基板結構及其製法與電子封裝件 |
CN109166849A (zh) * | 2018-10-12 | 2019-01-08 | 哈尔滨理工大学 | 超小尺寸rgb封装单元的制作方法 |
CN109742212A (zh) * | 2018-12-21 | 2019-05-10 | 华中科技大学鄂州工业技术研究院 | 一种led封装结构与封装方法 |
JP2022052941A (ja) * | 2020-09-24 | 2022-04-05 | スタンレー電気株式会社 | 半導体発光装置及び半導体発光モジュール |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005093601A (ja) * | 2003-09-16 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0343750U (ja) * | 1989-09-04 | 1991-04-24 | ||
JP3832877B2 (ja) * | 1995-07-26 | 2006-10-11 | 日亜化学工業株式会社 | セラミックスledパッケージおよびその製造方法 |
JP4271747B2 (ja) * | 1997-07-07 | 2009-06-03 | 株式会社朝日ラバー | 発光ダイオード用透光性被覆材及び蛍光カラー光源 |
JP2947344B2 (ja) * | 1997-08-19 | 1999-09-13 | サンケン電気株式会社 | 発光ダイオード装置 |
JP2000208822A (ja) | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
DE19918370B4 (de) * | 1999-04-22 | 2006-06-08 | Osram Opto Semiconductors Gmbh | LED-Weißlichtquelle mit Linse |
JP2001298216A (ja) * | 2000-04-12 | 2001-10-26 | Matsushita Electric Ind Co Ltd | 表面実装型の半導体発光装置 |
DE10020465A1 (de) | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
EP1179858B1 (en) * | 2000-08-09 | 2009-03-18 | Avago Technologies General IP (Singapore) Pte. Ltd | Light emitting devices |
US6650044B1 (en) | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
US6614057B2 (en) * | 2001-02-07 | 2003-09-02 | Universal Display Corporation | Sealed organic optoelectronic structures |
DE10117889A1 (de) * | 2001-04-10 | 2002-10-24 | Osram Opto Semiconductors Gmbh | Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung |
JP2002373950A (ja) | 2001-06-15 | 2002-12-26 | Seiko Instruments Inc | 気密封止icパッケージの製造方法 |
US6734465B1 (en) * | 2001-11-19 | 2004-05-11 | Nanocrystals Technology Lp | Nanocrystalline based phosphors and photonic structures for solid state lighting |
JP2003188422A (ja) | 2001-12-20 | 2003-07-04 | Alps Electric Co Ltd | 発光装置及びその製造方法 |
JP3707688B2 (ja) * | 2002-05-31 | 2005-10-19 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
US7768189B2 (en) * | 2004-08-02 | 2010-08-03 | Lumination Llc | White LEDs with tunable CRI |
US7264378B2 (en) * | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
KR20040021951A (ko) | 2002-09-06 | 2004-03-11 | 럭스피아 주식회사 | 백색 발광다이오드 |
JP4143732B2 (ja) * | 2002-10-16 | 2008-09-03 | スタンレー電気株式会社 | 車載用波長変換素子 |
TW200414572A (en) * | 2002-11-07 | 2004-08-01 | Matsushita Electric Ind Co Ltd | LED lamp |
KR20040044701A (ko) | 2002-11-21 | 2004-05-31 | 삼성전기주식회사 | 발광소자 패키지 및 그 제조방법 |
EP1603170B1 (en) | 2003-03-10 | 2018-08-01 | Toyoda Gosei Co., Ltd. | Method for manufacturing a solid-state optical element device |
EP2365539B1 (en) * | 2003-05-26 | 2018-05-02 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device |
JP4645071B2 (ja) * | 2003-06-20 | 2011-03-09 | 日亜化学工業株式会社 | パッケージ成型体およびそれを用いた半導体装置 |
DE102004063978B4 (de) * | 2003-07-17 | 2019-01-24 | Toyoda Gosei Co., Ltd. | Lichtemittierende Vorrichtung |
US7183587B2 (en) * | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
JP2005086044A (ja) * | 2003-09-09 | 2005-03-31 | Citizen Electronics Co Ltd | 高信頼性パッケージ |
US7029935B2 (en) * | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
JP2005093712A (ja) * | 2003-09-17 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
KR20050034936A (ko) | 2003-10-10 | 2005-04-15 | 삼성전기주식회사 | 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법 |
JP2005252219A (ja) * | 2004-02-06 | 2005-09-15 | Toyoda Gosei Co Ltd | 発光装置及び封止部材 |
JP4572312B2 (ja) * | 2004-02-23 | 2010-11-04 | スタンレー電気株式会社 | Led及びその製造方法 |
CN100454596C (zh) * | 2004-04-19 | 2009-01-21 | 松下电器产业株式会社 | Led照明光源的制造方法及led照明光源 |
JP4471356B2 (ja) * | 2004-04-23 | 2010-06-02 | スタンレー電気株式会社 | 半導体発光装置 |
WO2006013731A1 (ja) * | 2004-08-06 | 2006-02-09 | A. L. M. T. Corp. | 集合基板、半導体素子搭載部材、半導体装置、撮像装置、発光ダイオード構成部材、および発光ダイオード |
JP2006060058A (ja) | 2004-08-20 | 2006-03-02 | Matsushita Electric Works Ltd | 表面実装型電子部品、及び表面実装型電子部品を備えた照明器具 |
JP2006086176A (ja) * | 2004-09-14 | 2006-03-30 | Hitachi Kyowa Engineering Co Ltd | Led用サブマウント及びその製造方法 |
WO2006033239A1 (ja) * | 2004-09-22 | 2006-03-30 | Kabushiki Kaisha Toshiba | 発光装置とそれを用いたバックライトおよび液晶表示装置 |
JP2006093486A (ja) * | 2004-09-27 | 2006-04-06 | Kyocera Corp | 発光素子搭載用基板および発光装置 |
US20060097385A1 (en) * | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
DE102004053116A1 (de) | 2004-11-03 | 2006-05-04 | Tridonic Optoelectronics Gmbh | Leuchtdioden-Anordnung mit Farbkonversions-Material |
KR101161383B1 (ko) * | 2005-07-04 | 2012-07-02 | 서울반도체 주식회사 | 발광 다이오드 및 이를 제조하기 위한 방법 |
JP2007184319A (ja) | 2006-01-04 | 2007-07-19 | Showa Denko Kk | 半導体発光装置 |
JP4749870B2 (ja) * | 2006-01-24 | 2011-08-17 | 新光電気工業株式会社 | 発光装置の製造方法 |
EP1850399A1 (en) * | 2006-04-25 | 2007-10-31 | ILED Photoelectronics Inc. | Sealing structure for a white light emitting diode |
US7943952B2 (en) * | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
TWI418054B (zh) | 2006-08-08 | 2013-12-01 | Lg Electronics Inc | 發光裝置封裝與製造此封裝之方法 |
KR100888684B1 (ko) | 2006-08-25 | 2009-03-13 | 에스.오.아이. 테크 실리콘 온 인슐레이터 테크놀로지스 | 광검출장치 |
-
2007
- 2007-08-07 TW TW096129104A patent/TWI418054B/zh active
- 2007-08-07 US US11/890,543 patent/US20080035942A1/en not_active Abandoned
- 2007-08-08 JP JP2007206625A patent/JP2008042211A/ja active Pending
- 2007-08-08 EP EP07253107.2A patent/EP1887637B1/en active Active
-
2010
- 2010-04-07 US US12/755,822 patent/US9166123B2/en active Active
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2012
- 2012-05-16 JP JP2012112171A patent/JP2012178604A/ja active Pending
- 2012-06-22 US US13/530,880 patent/US20120261705A1/en not_active Abandoned
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2014
- 2014-04-23 JP JP2014089542A patent/JP2014135521A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005093601A (ja) * | 2003-09-16 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014135521A (ja) * | 2006-08-08 | 2014-07-24 | Lg Electronics Inc | 発光素子パッケージ |
US9166123B2 (en) | 2006-08-08 | 2015-10-20 | Lg Electronics Inc. | Light emitting device package and method for manufacturing the same |
KR101823570B1 (ko) | 2012-10-22 | 2018-01-30 | 센서 일렉트로닉 테크놀로지, 인크 | 2 단자 패키징 |
Also Published As
Publication number | Publication date |
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EP1887637A3 (en) | 2010-09-15 |
US9166123B2 (en) | 2015-10-20 |
US20080035942A1 (en) | 2008-02-14 |
JP2014135521A (ja) | 2014-07-24 |
EP1887637B1 (en) | 2016-12-14 |
US20100187556A1 (en) | 2010-07-29 |
TWI418054B (zh) | 2013-12-01 |
EP1887637A2 (en) | 2008-02-13 |
JP2008042211A (ja) | 2008-02-21 |
TW200816525A (en) | 2008-04-01 |
US20120261705A1 (en) | 2012-10-18 |
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