JP2008034805A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims abstract description 107
- 239000004020 conductor Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims description 29
- 239000010410 layer Substances 0.000 description 157
- 239000010408 film Substances 0.000 description 97
- 238000000605 extraction Methods 0.000 description 94
- 238000009792 diffusion process Methods 0.000 description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 15
- 229910052721 tungsten Inorganic materials 0.000 description 15
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- 230000015556 catabolic process Effects 0.000 description 13
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- 238000002955 isolation Methods 0.000 description 11
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- 230000015572 biosynthetic process Effects 0.000 description 9
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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Abstract
【解決手段】半導体装置は、半導体基板(1,5)と、半導体基板(1,5)に埋め込まれたゲート電極(9A,9B)と、ゲート電極(9A,9B)の更に内側に埋め込まれた導電体(15A,15B)と、導電体(15A,15B)と接続されるように半導体基板(1,5)の内部に形成された配線層(3)と、ゲート電極(9A,9B)と導電体(15A,15B)との間に配置された絶縁膜(14)とを備える。導電体(15A,15B)は、半導体基板(1,5)の表面よりも高くなるように形成されている。
【選択図】図1
Description
タと比較して2次降伏を起こし難いとされるDMOSFETにおいても、電流の局所集中による破壊の懸念がある。
以下、本発明にかかる半導体装置を具体化した第1の実施の形態について、図面を参照して説明する。
図1(B)は、図1(A)のA−A線に沿った断面構造を示したものである。
も深い位置にボロン(B)をイオン注入する。その後、注入された砒素およびボロンを熱処理により活性化する。これにより、エピタキシャルシリコン層5には、ソース拡散層10とボディ用拡散層11が形成される。
ることを防止することができる。
次に、この発明にかかる半導体装置を具現化した第2の実施の形態について説明する。この実施の形態にかかる半導体装置も、その基本的な構造は先の第1の実施の形態の半導体装置に準じたものとなっている。
Sトランジスタ、Pチャネル型MOSトランジスタ、NPN型トランジスタ等の縦型のトランジスタが形成されている。
純物、例えばホウ素(B)を基板32表面に注入する。このとき、埋め込み層38が、同時に、拡散される。
40内に形成されたゲート電極44はシリコン酸化膜42および絶縁層48により完全に被覆され、ソース電極50と完全に絶縁される。その後、フォトリソグラフィ技術により外部電極形成用のコンタクトホールを形成する。こうして、図14に示した縦型のNチャネル型MOSトランジスタ100が完成する。
本発明の半導体装置は、上記各実施の形態に限らず、例えば以下の実施の形態に変更することもできる。
点IC2を有している。そして、第1変曲点IC1を頂点とした角度θC1、及び第2変曲点IC2を頂点とした角度θC2は、いずれも鈍角である。従って、このような構造でも、第2の実施の形態と同様な効果が得られる。
第2面TD1及び第1面PD1間の角度θD1は鈍角である。従って、このような構造では、第1及び第2の実施の形態と同様な効果が得られる。
3,38…N型埋込拡散層
5,33…N型エピタキシャルシリコン層
7A,7B,13A、13B、39…トレンチ溝
10、47…ソース拡散層
15A、15B、43、100、110、200、210、220、230…ドレイン引出電極
Claims (10)
- 半導体装置であって、
半導体基板と、
前記半導体基板に埋め込まれた導電体と、
前記半導体基板の内部で前記導電体と接続されるように構成された配線層と、
前記半導体基板と前記導電体との間に配置された絶縁膜とを備え、
前記導電体は、前記半導体基板の表面よりも高くなるように形成されていることを特徴とする半導体装置。 - 半導体装置であって、
半導体基板と、
前記半導体基板に埋め込まれた導電体と、
前記半導体基板の内部で前記導電体と接続されるように構成された配線層と、
前記半導体基板と前記導電体との間に配置された絶縁膜とを備え、
前記導電体は少なくとも1つの第1面と少なくとも1つの第2面とを交互に有し、互いに隣接する前記第1面と前記第2面との間の角度によって少なくとも1つの変曲点が規定され、全ての変曲点において前記角度が鈍角であることを特徴とする半導体装置。 - 前記絶縁膜と前記半導体基板とは接していることを特徴とする請求項1又は2に記載の半導体装置。
- 半導体装置であって、
半導体基板と、
前記半導体基板に埋め込まれたゲート電極と、
前記ゲート電極の更に内側に埋め込まれた導電体と、
前記導電体と接続されるように前記半導体基板の内部に形成された配線層と、
前記ゲート電極と前記導電体との間に配置された絶縁膜とを備え、
前記導電体は、前記半導体基板の表面よりも高くなるように形成されていることを特徴とする半導体装置。 - 前記半導体基板に形成された導電層をさらに備え、前記導電体、前記配線層、前記半導体基板及び前記導電層間で電流が流れることを特徴とする請求項1乃至4の何れか一項に記載の半導体装置。
- 前記絶縁膜は更に前記半導体基板の表面を覆い、
前記導電体は、前記絶縁膜の表面よりも高くなるように形成されていることを特徴とする請求項1又は4に記載の半導体装置。 - 前記導電体は、鈍角を有する上端部を含むことを特徴とする請求項1乃至6の何れか一項に記載の半導体装置。
- 前記配線層は、前記導電体と接触する溝部を含むことを特徴とする請求項1乃至7の何れか一項に記載の半導体装置。
- 半導体装置の製造方法であって、
半導体基板を準備する工程と、
前記半導体基板の内部に配線層を形成する工程と、
前記半導体基板に前記配線層と接続される導電体を埋め込む工程であって、前記半導体基板と前記導電体との間に絶縁膜が配置されるように前記導電体を埋め込む工程とを備え
、
前記導電体を埋め込む工程は、前記導電体を前記半導体基板の表面よりも高くなるように形成することを含む、ことを特徴とする半導体装置の製造方法。 - 半導体基板の製造方法であって、
半導体基板を準備する工程と、
前記半導体基板の内部に配線層を形成する工程と、
前記半導体基板にゲート電極を埋め込む工程と、
前記ゲート電極の更に内側に前記配線層と接続される導電体を埋め込む工程であって、前記ゲート電極と前記導電体との間に絶縁膜が配置されるように前記導電体を埋め込む工程とを備え、
前記導電体を埋め込む工程は、前記導電体を前記半導体基板の表面よりも高くなるように形成することを含む、ことを特徴とする半導体装置の製造方法。
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US11/770,337 US7646062B2 (en) | 2006-06-29 | 2007-06-28 | Semiconductor device comprising buried wiring layer |
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Cited By (2)
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US7998808B2 (en) * | 2008-03-21 | 2011-08-16 | International Rectifier Corporation | Semiconductor device fabrication using spacers |
US8115097B2 (en) | 2009-11-19 | 2012-02-14 | International Business Machines Corporation | Grid-line-free contact for a photovoltaic cell |
US20130187159A1 (en) * | 2012-01-23 | 2013-07-25 | Infineon Technologies Ag | Integrated circuit and method of forming an integrated circuit |
US8796760B2 (en) * | 2012-03-14 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor and method of manufacturing the same |
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JP6130755B2 (ja) | 2013-08-12 | 2017-05-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN105225979A (zh) * | 2014-06-19 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件制程预测系统和方法 |
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JP2013201353A (ja) * | 2012-03-26 | 2013-10-03 | Renesas Electronics Corp | 半導体集積回路装置の製造方法 |
US9240330B2 (en) | 2012-03-26 | 2016-01-19 | Renesas Electronics Corporation | Method of manufacturing a semiconductor integrated circuit device |
JP2019024110A (ja) * | 2018-10-03 | 2019-02-14 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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