JP2007535825A5 - - Google Patents
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- Publication number
- JP2007535825A5 JP2007535825A5 JP2007510982A JP2007510982A JP2007535825A5 JP 2007535825 A5 JP2007535825 A5 JP 2007535825A5 JP 2007510982 A JP2007510982 A JP 2007510982A JP 2007510982 A JP2007510982 A JP 2007510982A JP 2007535825 A5 JP2007535825 A5 JP 2007535825A5
- Authority
- JP
- Japan
- Prior art keywords
- transmission line
- signal transmission
- line structure
- structure according
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005540 biological transmission Effects 0.000 claims 9
- 230000008054 signal transmission Effects 0.000 claims 7
- 239000000463 material Substances 0.000 claims 6
- 239000011229 interlayer Substances 0.000 claims 4
- 239000010410 layer Substances 0.000 claims 4
- 238000001465 metallisation Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/709,357 | 2004-04-29 | ||
| US10/709,357 US7005371B2 (en) | 2004-04-29 | 2004-04-29 | Method of forming suspended transmission line structures in back end of line processing |
| PCT/US2005/014645 WO2005112105A1 (en) | 2004-04-29 | 2005-04-28 | Method for forming suspended transmission line structures in back end of line processing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007535825A JP2007535825A (ja) | 2007-12-06 |
| JP2007535825A5 true JP2007535825A5 (enExample) | 2008-05-08 |
| JP4776618B2 JP4776618B2 (ja) | 2011-09-21 |
Family
ID=35187662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007510982A Expired - Fee Related JP4776618B2 (ja) | 2004-04-29 | 2005-04-28 | 半導体装置用のバックエンド工程伝送線路構造(バックエンド工程処理におけるサスペンデッド伝送線路構造の形成方法) |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7005371B2 (enExample) |
| EP (1) | EP1756862A4 (enExample) |
| JP (1) | JP4776618B2 (enExample) |
| KR (1) | KR101006286B1 (enExample) |
| CN (1) | CN100423216C (enExample) |
| TW (1) | TWI464840B (enExample) |
| WO (1) | WO2005112105A1 (enExample) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3563030B2 (ja) * | 2000-12-06 | 2004-09-08 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2005236107A (ja) * | 2004-02-20 | 2005-09-02 | Toshiba Corp | 上層メタル電源スタンダードセル、面積圧縮装置および回路最適化装置 |
| US7678682B2 (en) * | 2004-11-12 | 2010-03-16 | Axcelis Technologies, Inc. | Ultraviolet assisted pore sealing of porous low k dielectric films |
| FR2885735B1 (fr) * | 2005-05-10 | 2007-08-03 | St Microelectronics Sa | Circuit integre guide d'ondes |
| EP1949432B1 (en) * | 2005-11-08 | 2017-10-18 | Invensas Corporation | Producing a covered through substrate via using a temporary cap layer |
| DE102006001253B4 (de) * | 2005-12-30 | 2013-02-07 | Advanced Micro Devices, Inc. | Verfahren zur Herstellung einer Metallschicht über einem strukturierten Dielektrikum mittels einer nasschemischen Abscheidung mit einer stromlosen und einer leistungsgesteuerten Phase |
| US7898356B2 (en) | 2007-03-20 | 2011-03-01 | Nuvotronics, Llc | Coaxial transmission line microstructures and methods of formation thereof |
| KR101593686B1 (ko) | 2007-03-20 | 2016-02-12 | 누보트로닉스, 엘.엘.씨 | 일체화된 전자 요소들 및 이들의 형성 방법 |
| US8028406B2 (en) * | 2008-04-03 | 2011-10-04 | International Business Machines Corporation | Methods of fabricating coplanar waveguide structures |
| WO2009127914A1 (en) | 2008-04-17 | 2009-10-22 | Freescale Semiconductor, Inc. | Method of sealing an air gap in a layer of a semiconductor structure and semiconductor structure |
| US7919388B2 (en) * | 2008-05-30 | 2011-04-05 | Freescale Semiconductor, Inc. | Methods for fabricating semiconductor devices having reduced gate-drain capacitance |
| US7838389B2 (en) * | 2008-05-30 | 2010-11-23 | Freescale Semiconductor, Inc. | Enclosed void cavity for low dielectric constant insulator |
| US8299566B2 (en) | 2008-08-08 | 2012-10-30 | International Business Machines Corporation | Through wafer vias and method of making same |
| US8035198B2 (en) * | 2008-08-08 | 2011-10-11 | International Business Machines Corporation | Through wafer via and method of making same |
| US8384224B2 (en) | 2008-08-08 | 2013-02-26 | International Business Machines Corporation | Through wafer vias and method of making same |
| US8138036B2 (en) * | 2008-08-08 | 2012-03-20 | International Business Machines Corporation | Through silicon via and method of fabricating same |
| TW201043658A (en) * | 2009-06-15 | 2010-12-16 | Sumitomo Bakelite Co | Temporarily fixing agent for semiconductor wafer and method for producing semiconductor device using the same |
| US8164397B2 (en) * | 2009-08-17 | 2012-04-24 | International Business Machines Corporation | Method, structure, and design structure for an impedance-optimized microstrip transmission line for multi-band and ultra-wide band applications |
| JP2011100989A (ja) | 2009-10-09 | 2011-05-19 | Renesas Electronics Corp | 半導体装置 |
| US20110123783A1 (en) | 2009-11-23 | 2011-05-26 | David Sherrer | Multilayer build processses and devices thereof |
| US8232618B2 (en) | 2010-08-11 | 2012-07-31 | International Business Machines Corporation | Semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device and a method of forming the semiconductor structure using a self-assembly approach |
| US8530347B2 (en) | 2010-10-05 | 2013-09-10 | Freescale Semiconductor, Inc. | Electronic device including interconnects with a cavity therebetween and a process of forming the same |
| US8754338B2 (en) * | 2011-05-28 | 2014-06-17 | Banpil Photonics, Inc. | On-chip interconnects with reduced capacitance and method of afbrication |
| US8643187B1 (en) * | 2011-06-01 | 2014-02-04 | Banpil Photonics, Inc. | On-chip interconnects VIAS and method of fabrication |
| US8866300B1 (en) | 2011-06-05 | 2014-10-21 | Nuvotronics, Llc | Devices and methods for solder flow control in three-dimensional microstructures |
| WO2013010108A1 (en) | 2011-07-13 | 2013-01-17 | Nuvotronics, Llc | Methods of fabricating electronic and mechanical structures |
| US9318785B2 (en) | 2011-09-29 | 2016-04-19 | Broadcom Corporation | Apparatus for reconfiguring an integrated waveguide |
| US8508029B2 (en) * | 2011-09-29 | 2013-08-13 | Broadcom Corporation | Semiconductor package including an integrated waveguide |
| US9570420B2 (en) | 2011-09-29 | 2017-02-14 | Broadcom Corporation | Wireless communicating among vertically arranged integrated circuits (ICs) in a semiconductor package |
| US8670638B2 (en) | 2011-09-29 | 2014-03-11 | Broadcom Corporation | Signal distribution and radiation in a wireless enabled integrated circuit (IC) using a leaky waveguide |
| US9075105B2 (en) | 2011-09-29 | 2015-07-07 | Broadcom Corporation | Passive probing of various locations in a wireless enabled integrated circuit (IC) |
| US9142497B2 (en) * | 2011-10-05 | 2015-09-22 | Harris Corporation | Method for making electrical structure with air dielectric and related electrical structures |
| US8664743B1 (en) * | 2012-10-31 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Air-gap formation in interconnect structures |
| US9306254B1 (en) | 2013-03-15 | 2016-04-05 | Nuvotronics, Inc. | Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration |
| US9306255B1 (en) | 2013-03-15 | 2016-04-05 | Nuvotronics, Inc. | Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other |
| US9564355B2 (en) | 2013-12-09 | 2017-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure for semiconductor devices |
| US10310009B2 (en) | 2014-01-17 | 2019-06-04 | Nuvotronics, Inc | Wafer scale test interface unit and contactors |
| US9385068B2 (en) * | 2014-03-05 | 2016-07-05 | Northrop Grumman Systems Corporation | Stacked interconnect structure and method of making the same |
| KR102190654B1 (ko) * | 2014-04-07 | 2020-12-15 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
| US9123738B1 (en) * | 2014-05-16 | 2015-09-01 | Xilinx, Inc. | Transmission line via structure |
| US10847469B2 (en) | 2016-04-26 | 2020-11-24 | Cubic Corporation | CTE compensation for wafer-level and chip-scale packages and assemblies |
| US10511073B2 (en) | 2014-12-03 | 2019-12-17 | Cubic Corporation | Systems and methods for manufacturing stacked circuits and transmission lines |
| DE102014117977A1 (de) * | 2014-12-05 | 2016-06-09 | GAT Gesellschaft für Antriebstechnik mbH | Streifenleiter für berührungslose Datenübertragung mit hohen Datenraten |
| CN108369923B (zh) * | 2015-09-23 | 2023-03-14 | 英特尔公司 | 防止过孔穿通的无掩模气隙 |
| US9449871B1 (en) | 2015-11-18 | 2016-09-20 | International Business Machines Corporation | Hybrid airgap structure with oxide liner |
| US10622309B2 (en) * | 2017-10-30 | 2020-04-14 | Qorvo Us, Inc. | Transmission line structure with high Q factor and low insertion loss for millimeter wave applications |
| US10319654B1 (en) | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
| US10534888B2 (en) | 2018-01-03 | 2020-01-14 | International Business Machines Corporation | Hybrid back end of line metallization to balance performance and reliability |
| US11380622B2 (en) * | 2020-11-20 | 2022-07-05 | Globalfoundries U.S. Inc. | Method and related structure to authenticate integrated circuit with authentication film |
| JP2022144836A (ja) * | 2021-03-19 | 2022-10-03 | 株式会社東芝 | アイソレータ |
| CN117558707B (zh) * | 2023-11-01 | 2025-02-25 | 广芯微电子(广州)股份有限公司 | 一种防串扰的三维金属隔离布线结构及布线方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5619061A (en) * | 1993-07-27 | 1997-04-08 | Texas Instruments Incorporated | Micromechanical microwave switching |
| EP0915513A1 (en) * | 1997-10-23 | 1999-05-12 | STMicroelectronics S.r.l. | High quality factor, integrated inductor and production method thereof |
| JPH11204637A (ja) * | 1998-01-07 | 1999-07-30 | Toshiba Corp | 半導体装置およびその製造方法 |
| US6175727B1 (en) * | 1998-01-09 | 2001-01-16 | Texas Instruments Israel Ltd. | Suspended printed inductor and LC-type filter constructed therefrom |
| JP3318865B2 (ja) * | 1998-03-05 | 2002-08-26 | 日本電信電話株式会社 | 表面形状認識用センサおよびその製造方法 |
| DE69922722T2 (de) * | 1998-03-05 | 2005-12-15 | Nippon Telegraph And Telephone Corp. | Oberflächenform-Erkennungssensor und dessen Herstellungsverfahren |
| US6025261A (en) * | 1998-04-29 | 2000-02-15 | Micron Technology, Inc. | Method for making high-Q inductive elements |
| TW379432B (en) * | 1998-09-14 | 2000-01-11 | Worldwide Semiconductor Mfg | Method of manufacturing self-aligned shield wires |
| KR100308871B1 (ko) * | 1998-12-28 | 2001-11-03 | 윤덕용 | 동축 구조의 신호선 및 그의 제조 방법 |
| SE516743C2 (sv) * | 1999-06-29 | 2002-02-26 | Ericsson Telefon Ab L M | Microbandledarkrets för förlustreducering |
| US6556962B1 (en) * | 1999-07-02 | 2003-04-29 | Intel Corporation | Method for reducing network costs and its application to domino circuits |
| US6258688B1 (en) * | 2000-03-15 | 2001-07-10 | Taiwan Semiconductor Manufacturing Company | Method to form a high Q inductor |
| US6368953B1 (en) * | 2000-05-09 | 2002-04-09 | International Business Machines Corporation | Encapsulated metal structures for semiconductor devices and MIM capacitors including the same |
| SG98398A1 (en) * | 2000-05-25 | 2003-09-19 | Inst Of Microelectronics | Integrated circuit inductor |
| JP3877132B2 (ja) * | 2000-11-20 | 2007-02-07 | 富士通株式会社 | 多層配線基板及び半導体装置 |
| US6534843B2 (en) * | 2001-02-10 | 2003-03-18 | International Business Machines Corporation | High Q inductor with faraday shield and dielectric well buried in substrate |
| US6635306B2 (en) | 2001-06-22 | 2003-10-21 | University Of Cincinnati | Light emissive display with a black or color dielectric layer |
| US6555467B2 (en) * | 2001-09-28 | 2003-04-29 | Sharp Laboratories Of America, Inc. | Method of making air gaps copper interconnect |
| US6635506B2 (en) * | 2001-11-07 | 2003-10-21 | International Business Machines Corporation | Method of fabricating micro-electromechanical switches on CMOS compatible substrates |
| AU2002360464A1 (en) * | 2001-12-03 | 2003-06-17 | Memgen Corporation | Miniature rf and microwave components and methods for fabricating such components |
| US6943447B2 (en) * | 2002-01-10 | 2005-09-13 | Fujitsu Limited | Thin film multi-layer wiring substrate having a coaxial wiring structure in at least one layer |
| JP3903249B2 (ja) * | 2002-02-20 | 2007-04-11 | 富士通株式会社 | 半導体集積回路装置 |
| US6747340B2 (en) | 2002-03-15 | 2004-06-08 | Memx, Inc. | Multi-level shielded multi-conductor interconnect bus for MEMS |
| US6903001B2 (en) * | 2002-07-18 | 2005-06-07 | Micron Technology Inc. | Techniques to create low K ILD for BEOL |
| KR100525343B1 (ko) * | 2002-08-12 | 2005-11-02 | 학교법인 한국정보통신학원 | 3차원 초고주파 다층회로를 위한 공기 공동 제작방법 |
| JP2004128179A (ja) | 2002-10-02 | 2004-04-22 | Hitachi Cable Ltd | 配線板及び電子装置、ならびに配線板の製造方法 |
| WO2004079795A2 (en) * | 2003-03-04 | 2004-09-16 | Rohm And Haas Electronic Materials, L.L.C. | Coaxial waveguide microstructures and methods of formation thereof |
| US6913946B2 (en) * | 2003-06-13 | 2005-07-05 | Aptos Corporation | Method of making an ultimate low dielectric device |
-
2004
- 2004-04-29 US US10/709,357 patent/US7005371B2/en not_active Expired - Fee Related
-
2005
- 2005-04-08 TW TW094111141A patent/TWI464840B/zh not_active IP Right Cessation
- 2005-04-28 CN CNB2005800134522A patent/CN100423216C/zh not_active Expired - Fee Related
- 2005-04-28 EP EP05741890A patent/EP1756862A4/en not_active Withdrawn
- 2005-04-28 KR KR1020067020388A patent/KR101006286B1/ko not_active Expired - Fee Related
- 2005-04-28 JP JP2007510982A patent/JP4776618B2/ja not_active Expired - Fee Related
- 2005-04-28 WO PCT/US2005/014645 patent/WO2005112105A1/en not_active Ceased
- 2005-12-05 US US11/164,765 patent/US7608909B2/en not_active Expired - Lifetime
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