JP2003151978A5 - - Google Patents

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Publication number
JP2003151978A5
JP2003151978A5 JP2002298439A JP2002298439A JP2003151978A5 JP 2003151978 A5 JP2003151978 A5 JP 2003151978A5 JP 2002298439 A JP2002298439 A JP 2002298439A JP 2002298439 A JP2002298439 A JP 2002298439A JP 2003151978 A5 JP2003151978 A5 JP 2003151978A5
Authority
JP
Japan
Prior art keywords
semiconductor wafer
via structure
insulating layer
conductors
substrate material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002298439A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003151978A (ja
JP3955810B2 (ja
Filing date
Publication date
Priority claimed from US10/035,792 external-priority patent/US6750516B2/en
Application filed filed Critical
Publication of JP2003151978A publication Critical patent/JP2003151978A/ja
Publication of JP2003151978A5 publication Critical patent/JP2003151978A5/ja
Application granted granted Critical
Publication of JP3955810B2 publication Critical patent/JP3955810B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002298439A 2001-10-18 2002-10-11 ウェーハの諸部分を電気的に分離するためのシステム Expired - Fee Related JP3955810B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/035,792 US6750516B2 (en) 2001-10-18 2001-10-18 Systems and methods for electrically isolating portions of wafers
US10/035,792 2001-10-18

Publications (3)

Publication Number Publication Date
JP2003151978A JP2003151978A (ja) 2003-05-23
JP2003151978A5 true JP2003151978A5 (enExample) 2005-09-29
JP3955810B2 JP3955810B2 (ja) 2007-08-08

Family

ID=21884809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002298439A Expired - Fee Related JP3955810B2 (ja) 2001-10-18 2002-10-11 ウェーハの諸部分を電気的に分離するためのシステム

Country Status (3)

Country Link
US (2) US6750516B2 (enExample)
EP (1) EP1306901A3 (enExample)
JP (1) JP3955810B2 (enExample)

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JP4439976B2 (ja) 2004-03-31 2010-03-24 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP4568039B2 (ja) 2004-06-30 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体モジュール
JP4795677B2 (ja) * 2004-12-02 2011-10-19 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体モジュール、ならびに半導体装置の製造方法
JP4577687B2 (ja) 2005-03-17 2010-11-10 エルピーダメモリ株式会社 半導体装置
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CA2607918A1 (en) 2005-05-18 2006-11-23 Kolo Technologies, Inc. Micro-electro-mechanical transducers
US8456015B2 (en) 2005-06-14 2013-06-04 Cufer Asset Ltd. L.L.C. Triaxial through-chip connection
US7687400B2 (en) 2005-06-14 2010-03-30 John Trezza Side stacking apparatus and method
US7942182B2 (en) 2005-06-14 2011-05-17 Cufer Asset Ltd. L.L.C. Rigid-backed, membrane-based chip tooling
US7215032B2 (en) 2005-06-14 2007-05-08 Cubic Wafer, Inc. Triaxial through-chip connection
US7786592B2 (en) 2005-06-14 2010-08-31 John Trezza Chip capacitive coupling
US7781886B2 (en) 2005-06-14 2010-08-24 John Trezza Electronic chip contact structure
US7560813B2 (en) 2005-06-14 2009-07-14 John Trezza Chip-based thermo-stack
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US9601474B2 (en) * 2005-07-22 2017-03-21 Invensas Corporation Electrically stackable semiconductor wafer and chip packages
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US20070042563A1 (en) * 2005-08-19 2007-02-22 Honeywell International Inc. Single crystal based through the wafer connections technical field
JP4869664B2 (ja) 2005-08-26 2012-02-08 本田技研工業株式会社 半導体装置の製造方法
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JP4847072B2 (ja) * 2005-08-26 2011-12-28 本田技研工業株式会社 半導体集積回路装置およびその製造方法
US8354730B2 (en) * 2005-08-26 2013-01-15 Hitachi, Ltd. Manufacturing method of semiconductor device and semiconductor device
JP5021992B2 (ja) * 2005-09-29 2012-09-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7633167B2 (en) 2005-09-29 2009-12-15 Nec Electronics Corporation Semiconductor device and method for manufacturing same
US20070126085A1 (en) 2005-12-02 2007-06-07 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
JP2007180529A (ja) * 2005-12-02 2007-07-12 Nec Electronics Corp 半導体装置およびその製造方法
US8324103B2 (en) * 2006-02-01 2012-12-04 Silex Microsystems Ab Vias and method of making
ATE538496T1 (de) 2006-03-27 2012-01-15 Koninkl Philips Electronics Nv Herstellungsmethode für eine niederohmige substratdurchgangsverbindung für halbleiterträger
US7687397B2 (en) 2006-06-06 2010-03-30 John Trezza Front-end processed wafer having through-chip connections
US20080067665A1 (en) * 2006-09-20 2008-03-20 Azniza Binti Abd Aziz Via structure
US7670874B2 (en) * 2007-02-16 2010-03-02 John Trezza Plated pillar package formation
JP5563186B2 (ja) * 2007-03-30 2014-07-30 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
US7799612B2 (en) * 2007-06-25 2010-09-21 Spansion Llc Process applying die attach film to singulated die
US20090146295A1 (en) * 2007-12-11 2009-06-11 Hidefumi Narita Ceramic substrate having thermal via
US8242593B2 (en) * 2008-01-27 2012-08-14 International Business Machines Corporation Clustered stacked vias for reliable electronic substrates
WO2010023812A1 (ja) * 2008-08-28 2010-03-04 パナソニック株式会社 半導体装置
KR20100042021A (ko) * 2008-10-15 2010-04-23 삼성전자주식회사 반도체 칩, 스택 모듈, 메모리 카드 및 반도체 칩의 제조 방법
TWI470766B (zh) * 2009-03-10 2015-01-21 日月光半導體製造股份有限公司 晶片結構、晶圓結構以及晶片製程
JP5150665B2 (ja) * 2010-03-03 2013-02-20 株式会社東芝 不揮発性半導体記憶装置
US8455349B2 (en) * 2010-04-28 2013-06-04 Headway Technologies, Inc. Layered chip package and method of manufacturing same
US8283785B2 (en) * 2010-09-20 2012-10-09 Micron Technology, Inc. Interconnect regions
FR2970120A1 (fr) * 2010-12-31 2012-07-06 St Microelectronics Crolles 2 Via traversant isole
JP2013115382A (ja) * 2011-11-30 2013-06-10 Elpida Memory Inc 半導体装置及びその製造方法

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JP2998662B2 (ja) * 1996-11-15 2000-01-11 日本電気株式会社 半導体装置
US6331722B1 (en) * 1997-01-18 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
US5998292A (en) * 1997-11-12 1999-12-07 International Business Machines Corporation Method for making three dimensional circuit integration
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JP2001015589A (ja) * 1999-06-30 2001-01-19 Denso Corp 半導体装置
FR2805709B1 (fr) * 2000-02-28 2002-05-17 Commissariat Energie Atomique Connexion electrique entre deux faces d'un substrat et procede de realisation
US6737740B2 (en) * 2001-02-08 2004-05-18 Micron Technology, Inc. High performance silicon contact for flip chip

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