JP3955810B2 - ウェーハの諸部分を電気的に分離するためのシステム - Google Patents

ウェーハの諸部分を電気的に分離するためのシステム Download PDF

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Publication number
JP3955810B2
JP3955810B2 JP2002298439A JP2002298439A JP3955810B2 JP 3955810 B2 JP3955810 B2 JP 3955810B2 JP 2002298439 A JP2002298439 A JP 2002298439A JP 2002298439 A JP2002298439 A JP 2002298439A JP 3955810 B2 JP3955810 B2 JP 3955810B2
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Japan
Prior art keywords
wafer
insulating layer
conductor
semiconductor wafer
via structure
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Expired - Fee Related
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JP2002298439A
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English (en)
Japanese (ja)
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JP2003151978A (ja
JP2003151978A5 (enExample
Inventor
ピーター・ジョージ・ハートウェル
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HP Inc
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Hewlett Packard Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H01L2223/6622—Coaxial feed-throughs in active or passive substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)
JP2002298439A 2001-10-18 2002-10-11 ウェーハの諸部分を電気的に分離するためのシステム Expired - Fee Related JP3955810B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/035,792 US6750516B2 (en) 2001-10-18 2001-10-18 Systems and methods for electrically isolating portions of wafers
US10/035,792 2001-10-18

Publications (3)

Publication Number Publication Date
JP2003151978A JP2003151978A (ja) 2003-05-23
JP2003151978A5 JP2003151978A5 (enExample) 2005-09-29
JP3955810B2 true JP3955810B2 (ja) 2007-08-08

Family

ID=21884809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002298439A Expired - Fee Related JP3955810B2 (ja) 2001-10-18 2002-10-11 ウェーハの諸部分を電気的に分離するためのシステム

Country Status (3)

Country Link
US (2) US6750516B2 (enExample)
EP (1) EP1306901A3 (enExample)
JP (1) JP3955810B2 (enExample)

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JP4439976B2 (ja) 2004-03-31 2010-03-24 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP4568039B2 (ja) 2004-06-30 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体モジュール
JP4795677B2 (ja) * 2004-12-02 2011-10-19 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体モジュール、ならびに半導体装置の製造方法
JP4577687B2 (ja) 2005-03-17 2010-11-10 エルピーダメモリ株式会社 半導体装置
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US8456015B2 (en) 2005-06-14 2013-06-04 Cufer Asset Ltd. L.L.C. Triaxial through-chip connection
US7687400B2 (en) 2005-06-14 2010-03-30 John Trezza Side stacking apparatus and method
US7942182B2 (en) 2005-06-14 2011-05-17 Cufer Asset Ltd. L.L.C. Rigid-backed, membrane-based chip tooling
US7215032B2 (en) 2005-06-14 2007-05-08 Cubic Wafer, Inc. Triaxial through-chip connection
US7786592B2 (en) 2005-06-14 2010-08-31 John Trezza Chip capacitive coupling
US7781886B2 (en) 2005-06-14 2010-08-24 John Trezza Electronic chip contact structure
US7560813B2 (en) 2005-06-14 2009-07-14 John Trezza Chip-based thermo-stack
US7838997B2 (en) 2005-06-14 2010-11-23 John Trezza Remote chip attachment
US7851348B2 (en) 2005-06-14 2010-12-14 Abhay Misra Routingless chip architecture
US7807550B2 (en) * 2005-06-17 2010-10-05 Dalsa Semiconductor Inc. Method of making MEMS wafers
CN101558552B (zh) 2005-06-17 2017-05-31 科隆科技公司 具有绝缘延伸部的微机电换能器
US9601474B2 (en) * 2005-07-22 2017-03-21 Invensas Corporation Electrically stackable semiconductor wafer and chip packages
DE102005039068A1 (de) * 2005-08-11 2007-02-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleitersubstrat und Verfahren zur Herstellung
US20070042563A1 (en) * 2005-08-19 2007-02-22 Honeywell International Inc. Single crystal based through the wafer connections technical field
JP4869664B2 (ja) 2005-08-26 2012-02-08 本田技研工業株式会社 半導体装置の製造方法
CN100559574C (zh) * 2005-08-26 2009-11-11 皇家飞利浦电子股份有限公司 电屏蔽穿通晶片互连和其制造方法及检测元件和检测设备
JP4847072B2 (ja) * 2005-08-26 2011-12-28 本田技研工業株式会社 半導体集積回路装置およびその製造方法
US8354730B2 (en) * 2005-08-26 2013-01-15 Hitachi, Ltd. Manufacturing method of semiconductor device and semiconductor device
JP5021992B2 (ja) * 2005-09-29 2012-09-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7633167B2 (en) 2005-09-29 2009-12-15 Nec Electronics Corporation Semiconductor device and method for manufacturing same
US20070126085A1 (en) 2005-12-02 2007-06-07 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
JP2007180529A (ja) * 2005-12-02 2007-07-12 Nec Electronics Corp 半導体装置およびその製造方法
US8324103B2 (en) * 2006-02-01 2012-12-04 Silex Microsystems Ab Vias and method of making
ATE538496T1 (de) 2006-03-27 2012-01-15 Koninkl Philips Electronics Nv Herstellungsmethode für eine niederohmige substratdurchgangsverbindung für halbleiterträger
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JP5563186B2 (ja) * 2007-03-30 2014-07-30 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
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US20090146295A1 (en) * 2007-12-11 2009-06-11 Hidefumi Narita Ceramic substrate having thermal via
US8242593B2 (en) * 2008-01-27 2012-08-14 International Business Machines Corporation Clustered stacked vias for reliable electronic substrates
WO2010023812A1 (ja) * 2008-08-28 2010-03-04 パナソニック株式会社 半導体装置
KR20100042021A (ko) * 2008-10-15 2010-04-23 삼성전자주식회사 반도체 칩, 스택 모듈, 메모리 카드 및 반도체 칩의 제조 방법
TWI470766B (zh) * 2009-03-10 2015-01-21 日月光半導體製造股份有限公司 晶片結構、晶圓結構以及晶片製程
JP5150665B2 (ja) * 2010-03-03 2013-02-20 株式会社東芝 不揮発性半導体記憶装置
US8455349B2 (en) * 2010-04-28 2013-06-04 Headway Technologies, Inc. Layered chip package and method of manufacturing same
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Also Published As

Publication number Publication date
US20040192029A1 (en) 2004-09-30
JP2003151978A (ja) 2003-05-23
EP1306901A3 (en) 2005-09-14
US20030077877A1 (en) 2003-04-24
US7115505B2 (en) 2006-10-03
EP1306901A2 (en) 2003-05-02
US6750516B2 (en) 2004-06-15

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