JP2011139069A5 - - Google Patents

Download PDF

Info

Publication number
JP2011139069A5
JP2011139069A5 JP2010293198A JP2010293198A JP2011139069A5 JP 2011139069 A5 JP2011139069 A5 JP 2011139069A5 JP 2010293198 A JP2010293198 A JP 2010293198A JP 2010293198 A JP2010293198 A JP 2010293198A JP 2011139069 A5 JP2011139069 A5 JP 2011139069A5
Authority
JP
Japan
Prior art keywords
layer
electrode
electronic circuit
diamond layer
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010293198A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011139069A (ja
JP6245784B2 (ja
Filing date
Publication date
Priority claimed from FR0959670A external-priority patent/FR2954831B1/fr
Application filed filed Critical
Publication of JP2011139069A publication Critical patent/JP2011139069A/ja
Publication of JP2011139069A5 publication Critical patent/JP2011139069A5/ja
Application granted granted Critical
Publication of JP6245784B2 publication Critical patent/JP6245784B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010293198A 2009-12-30 2010-12-28 集積ダイアモンド変換画素化撮像装置及びその製造方法 Expired - Fee Related JP6245784B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0959670 2009-12-30
FR0959670A FR2954831B1 (fr) 2009-12-30 2009-12-30 Dispositif imageur pixelise integre a transduction par diamant et procede de realisation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017000463A Division JP2017120266A (ja) 2009-12-30 2017-01-05 集積ダイアモンド変換画素化撮像装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2011139069A JP2011139069A (ja) 2011-07-14
JP2011139069A5 true JP2011139069A5 (enExample) 2016-06-30
JP6245784B2 JP6245784B2 (ja) 2017-12-13

Family

ID=42340599

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010293198A Expired - Fee Related JP6245784B2 (ja) 2009-12-30 2010-12-28 集積ダイアモンド変換画素化撮像装置及びその製造方法
JP2017000463A Pending JP2017120266A (ja) 2009-12-30 2017-01-05 集積ダイアモンド変換画素化撮像装置及びその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017000463A Pending JP2017120266A (ja) 2009-12-30 2017-01-05 集積ダイアモンド変換画素化撮像装置及びその製造方法

Country Status (4)

Country Link
US (1) US8723187B2 (enExample)
EP (1) EP2357496B1 (enExample)
JP (2) JP6245784B2 (enExample)
FR (1) FR2954831B1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102368536A (zh) * 2011-11-25 2012-03-07 北京大学 一种阻变式存储器单元
US8981383B1 (en) * 2012-03-05 2015-03-17 Aurrion, Inc. Efficient substrate heat transfer layer for photonic devices
TWI660490B (zh) * 2014-03-13 2019-05-21 日商半導體能源研究所股份有限公司 攝像裝置
US10700165B2 (en) * 2016-06-17 2020-06-30 Adamantite Technologies LLC Doped diamond SemiConductor and method of manufacture using laser abalation
WO2020262643A1 (ja) * 2019-06-26 2020-12-30 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114292A (en) * 1981-01-06 1982-07-16 Fuji Xerox Co Ltd Thin film image pickup element
JPH01291460A (ja) * 1988-05-18 1989-11-24 Mitsubishi Electric Corp 固体撮像装置
JP2591533B2 (ja) * 1990-01-10 1997-03-19 住友電気工業株式会社 放射線検出素子およびその製造方法
JPH05308149A (ja) * 1992-04-30 1993-11-19 Olympus Optical Co Ltd 軟ｘ線検出素子
US5352897A (en) * 1992-03-16 1994-10-04 Olympus Optical Co., Ltd. Device for detecting X-rays
US5276338A (en) * 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
JPH08107209A (ja) * 1994-10-05 1996-04-23 Nippon Telegr & Teleph Corp <Ntt> トランジスタ回路
JP2001291854A (ja) * 2000-04-07 2001-10-19 Matsushita Electric Ind Co Ltd ２次元ｘ線センサおよびその製造方法
JP3719947B2 (ja) * 2001-04-18 2005-11-24 シャープ株式会社 固体撮像装置及びその製造方法
JP4138673B2 (ja) * 2004-01-08 2008-08-27 株式会社神戸製鋼所 ダイヤモンドセンサ
US7160753B2 (en) * 2004-03-16 2007-01-09 Voxtel, Inc. Silicon-on-insulator active pixel sensors
JP4654623B2 (ja) * 2004-07-08 2011-03-23 ソニー株式会社 固体撮像装置の製造方法
GB0423599D0 (en) * 2004-10-23 2004-11-24 Univ Belfast Electro-optical device
JP4725095B2 (ja) * 2004-12-15 2011-07-13 ソニー株式会社 裏面入射型固体撮像装置及びその製造方法
FR2888989B1 (fr) * 2005-07-21 2008-06-06 St Microelectronics Sa Capteur d'images
US8212328B2 (en) * 2007-12-05 2012-07-03 Intellectual Ventures Ii Llc Backside illuminated image sensor
JP2009158528A (ja) * 2007-12-25 2009-07-16 Sharp Corp 半導体装置
US8314498B2 (en) * 2010-09-10 2012-11-20 Aptina Imaging Corporation Isolated bond pad with conductive via interconnect
JP5853389B2 (ja) * 2011-03-28 2016-02-09 ソニー株式会社 半導体装置及び半導体装置の製造方法。

Similar Documents

Publication Publication Date Title
JP2012521704A5 (enExample)
JP5101575B2 (ja) 半導体装置およびその製造方法
US10978386B2 (en) Microelectronic devices with through-silicon vias and associated methods of manufacturing
US10779100B2 (en) Method for manufacturing a microphone
JP2017516428A5 (enExample)
TWI599026B (zh) 製造多晶圓影像感測器之方法
JP2010532090A5 (enExample)
JP2011513957A5 (enExample)
US20090174024A1 (en) Image sensor and method for manufacturing the same
JP2011171567A (ja) 基板構造物の製造方法及び半導体装置の製造方法
JP2011139069A5 (enExample)
JP2008294218A5 (enExample)
US8906781B2 (en) Method for electrically connecting wafers using butting contact structure and semiconductor device fabricated through the same
JP2012508971A5 (enExample)
JP2013140975A5 (enExample)
JP2006179903A5 (enExample)
JP2012164945A5 (enExample)
CN104078473A (zh) 固体摄像装置
CN106449686A (zh) 一种背照式图像传感器的背面结构及其制备方法
US8679937B2 (en) Method for fabricating a capacitor and capacitor structure thereof
CN105900247A (zh) 用于光学应用的半导体器件和制造这样半导体器件的方法
KR20100076520A (ko) 이미지 센서 및 그의 제조방법
TW202021086A (zh) 穿矽通孔結構及其製造方法
JP2005260081A5 (enExample)
JP2007115922A (ja) 半導体装置