FR2954831B1 - Dispositif imageur pixelise integre a transduction par diamant et procede de realisation - Google Patents

Dispositif imageur pixelise integre a transduction par diamant et procede de realisation

Info

Publication number
FR2954831B1
FR2954831B1 FR0959670A FR0959670A FR2954831B1 FR 2954831 B1 FR2954831 B1 FR 2954831B1 FR 0959670 A FR0959670 A FR 0959670A FR 0959670 A FR0959670 A FR 0959670A FR 2954831 B1 FR2954831 B1 FR 2954831B1
Authority
FR
France
Prior art keywords
transduction
diamond
integrated
imaging device
making same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0959670A
Other languages
English (en)
French (fr)
Other versions
FR2954831A1 (fr
Inventor
Jean-Paul Mazellier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0959670A priority Critical patent/FR2954831B1/fr
Priority to EP10197019A priority patent/EP2357496B1/fr
Priority to JP2010293198A priority patent/JP6245784B2/ja
Priority to US12/980,760 priority patent/US8723187B2/en
Publication of FR2954831A1 publication Critical patent/FR2954831A1/fr
Application granted granted Critical
Publication of FR2954831B1 publication Critical patent/FR2954831B1/fr
Priority to JP2017000463A priority patent/JP2017120266A/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/26—Measuring radiation intensity with resistance detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
FR0959670A 2009-12-30 2009-12-30 Dispositif imageur pixelise integre a transduction par diamant et procede de realisation Expired - Fee Related FR2954831B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0959670A FR2954831B1 (fr) 2009-12-30 2009-12-30 Dispositif imageur pixelise integre a transduction par diamant et procede de realisation
EP10197019A EP2357496B1 (fr) 2009-12-30 2010-12-27 Dispositif imageur pixelisé intégré à transduction par diamant et procédé de réalisation
JP2010293198A JP6245784B2 (ja) 2009-12-30 2010-12-28 集積ダイアモンド変換画素化撮像装置及びその製造方法
US12/980,760 US8723187B2 (en) 2009-12-30 2010-12-29 Integrated diamond transduction pixelized imager device and manufacturing process
JP2017000463A JP2017120266A (ja) 2009-12-30 2017-01-05 集積ダイアモンド変換画素化撮像装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0959670A FR2954831B1 (fr) 2009-12-30 2009-12-30 Dispositif imageur pixelise integre a transduction par diamant et procede de realisation

Publications (2)

Publication Number Publication Date
FR2954831A1 FR2954831A1 (fr) 2011-07-01
FR2954831B1 true FR2954831B1 (fr) 2013-02-08

Family

ID=42340599

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0959670A Expired - Fee Related FR2954831B1 (fr) 2009-12-30 2009-12-30 Dispositif imageur pixelise integre a transduction par diamant et procede de realisation

Country Status (4)

Country Link
US (1) US8723187B2 (enExample)
EP (1) EP2357496B1 (enExample)
JP (2) JP6245784B2 (enExample)
FR (1) FR2954831B1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102368536A (zh) * 2011-11-25 2012-03-07 北京大学 一种阻变式存储器单元
US8981383B1 (en) * 2012-03-05 2015-03-17 Aurrion, Inc. Efficient substrate heat transfer layer for photonic devices
WO2015136418A1 (en) * 2014-03-13 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US10700165B2 (en) * 2016-06-17 2020-06-30 Adamantite Technologies LLC Doped diamond SemiConductor and method of manufacture using laser abalation
CN113812000A (zh) * 2019-06-26 2021-12-17 索尼半导体解决方案公司 固态成像装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114292A (en) * 1981-01-06 1982-07-16 Fuji Xerox Co Ltd Thin film image pickup element
JPH01291460A (ja) * 1988-05-18 1989-11-24 Mitsubishi Electric Corp 固体撮像装置
JP2591533B2 (ja) * 1990-01-10 1997-03-19 住友電気工業株式会社 放射線検出素子およびその製造方法
JPH05308149A (ja) * 1992-04-30 1993-11-19 Olympus Optical Co Ltd 軟ｘ線検出素子
US5352897A (en) * 1992-03-16 1994-10-04 Olympus Optical Co., Ltd. Device for detecting X-rays
US5276338A (en) * 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
JPH08107209A (ja) * 1994-10-05 1996-04-23 Nippon Telegr & Teleph Corp <Ntt> トランジスタ回路
JP2001291854A (ja) * 2000-04-07 2001-10-19 Matsushita Electric Ind Co Ltd ２次元ｘ線センサおよびその製造方法
JP3719947B2 (ja) * 2001-04-18 2005-11-24 シャープ株式会社 固体撮像装置及びその製造方法
JP4138673B2 (ja) * 2004-01-08 2008-08-27 株式会社神戸製鋼所 ダイヤモンドセンサ
US7160753B2 (en) * 2004-03-16 2007-01-09 Voxtel, Inc. Silicon-on-insulator active pixel sensors
JP4654623B2 (ja) * 2004-07-08 2011-03-23 ソニー株式会社 固体撮像装置の製造方法
GB0423599D0 (en) * 2004-10-23 2004-11-24 Univ Belfast Electro-optical device
JP4725095B2 (ja) * 2004-12-15 2011-07-13 ソニー株式会社 裏面入射型固体撮像装置及びその製造方法
FR2888989B1 (fr) * 2005-07-21 2008-06-06 St Microelectronics Sa Capteur d'images
US8212328B2 (en) * 2007-12-05 2012-07-03 Intellectual Ventures Ii Llc Backside illuminated image sensor
JP2009158528A (ja) * 2007-12-25 2009-07-16 Sharp Corp 半導体装置
US8314498B2 (en) * 2010-09-10 2012-11-20 Aptina Imaging Corporation Isolated bond pad with conductive via interconnect
JP5853389B2 (ja) * 2011-03-28 2016-02-09 ソニー株式会社 半導体装置及び半導体装置の製造方法。

Also Published As

Publication number Publication date
JP2011139069A (ja) 2011-07-14
FR2954831A1 (fr) 2011-07-01
EP2357496A1 (fr) 2011-08-17
EP2357496B1 (fr) 2012-09-05
JP6245784B2 (ja) 2017-12-13
US20110156055A1 (en) 2011-06-30
US8723187B2 (en) 2014-05-13
JP2017120266A (ja) 2017-07-06

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Legal Events

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Effective date: 20140829