JP6245784B2 - 集積ダイアモンド変換画素化撮像装置及びその製造方法 - Google Patents

集積ダイアモンド変換画素化撮像装置及びその製造方法 Download PDF

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JP6245784B2
JP6245784B2 JP2010293198A JP2010293198A JP6245784B2 JP 6245784 B2 JP6245784 B2 JP 6245784B2 JP 2010293198 A JP2010293198 A JP 2010293198A JP 2010293198 A JP2010293198 A JP 2010293198A JP 6245784 B2 JP6245784 B2 JP 6245784B2
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layer
electrode
electronic circuit
diamond
imaging device
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JP2011139069A (ja
JP2011139069A5 (enExample
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ジャン−ポール・マズリエ
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コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ
コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/26—Measuring radiation intensity with resistance detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
JP2010293198A 2009-12-30 2010-12-28 集積ダイアモンド変換画素化撮像装置及びその製造方法 Expired - Fee Related JP6245784B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0959670 2009-12-30
FR0959670A FR2954831B1 (fr) 2009-12-30 2009-12-30 Dispositif imageur pixelise integre a transduction par diamant et procede de realisation

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JP2017000463A Division JP2017120266A (ja) 2009-12-30 2017-01-05 集積ダイアモンド変換画素化撮像装置及びその製造方法

Publications (3)

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JP2011139069A JP2011139069A (ja) 2011-07-14
JP2011139069A5 JP2011139069A5 (enExample) 2016-06-30
JP6245784B2 true JP6245784B2 (ja) 2017-12-13

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JP2010293198A Expired - Fee Related JP6245784B2 (ja) 2009-12-30 2010-12-28 集積ダイアモンド変換画素化撮像装置及びその製造方法
JP2017000463A Pending JP2017120266A (ja) 2009-12-30 2017-01-05 集積ダイアモンド変換画素化撮像装置及びその製造方法

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US (1) US8723187B2 (enExample)
EP (1) EP2357496B1 (enExample)
JP (2) JP6245784B2 (enExample)
FR (1) FR2954831B1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102368536A (zh) * 2011-11-25 2012-03-07 北京大学 一种阻变式存储器单元
US8981383B1 (en) * 2012-03-05 2015-03-17 Aurrion, Inc. Efficient substrate heat transfer layer for photonic devices
WO2015136418A1 (en) * 2014-03-13 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US10700165B2 (en) * 2016-06-17 2020-06-30 Adamantite Technologies LLC Doped diamond SemiConductor and method of manufacture using laser abalation
CN113812000A (zh) * 2019-06-26 2021-12-17 索尼半导体解决方案公司 固态成像装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114292A (en) * 1981-01-06 1982-07-16 Fuji Xerox Co Ltd Thin film image pickup element
JPH01291460A (ja) * 1988-05-18 1989-11-24 Mitsubishi Electric Corp 固体撮像装置
JP2591533B2 (ja) * 1990-01-10 1997-03-19 住友電気工業株式会社 放射線検出素子およびその製造方法
JPH05308149A (ja) * 1992-04-30 1993-11-19 Olympus Optical Co Ltd 軟ｘ線検出素子
US5352897A (en) * 1992-03-16 1994-10-04 Olympus Optical Co., Ltd. Device for detecting X-rays
US5276338A (en) * 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
JPH08107209A (ja) * 1994-10-05 1996-04-23 Nippon Telegr & Teleph Corp <Ntt> トランジスタ回路
JP2001291854A (ja) * 2000-04-07 2001-10-19 Matsushita Electric Ind Co Ltd ２次元ｘ線センサおよびその製造方法
JP3719947B2 (ja) * 2001-04-18 2005-11-24 シャープ株式会社 固体撮像装置及びその製造方法
JP4138673B2 (ja) * 2004-01-08 2008-08-27 株式会社神戸製鋼所 ダイヤモンドセンサ
US7160753B2 (en) * 2004-03-16 2007-01-09 Voxtel, Inc. Silicon-on-insulator active pixel sensors
JP4654623B2 (ja) * 2004-07-08 2011-03-23 ソニー株式会社 固体撮像装置の製造方法
GB0423599D0 (en) * 2004-10-23 2004-11-24 Univ Belfast Electro-optical device
JP4725095B2 (ja) * 2004-12-15 2011-07-13 ソニー株式会社 裏面入射型固体撮像装置及びその製造方法
FR2888989B1 (fr) * 2005-07-21 2008-06-06 St Microelectronics Sa Capteur d'images
US8212328B2 (en) * 2007-12-05 2012-07-03 Intellectual Ventures Ii Llc Backside illuminated image sensor
JP2009158528A (ja) * 2007-12-25 2009-07-16 Sharp Corp 半導体装置
US8314498B2 (en) * 2010-09-10 2012-11-20 Aptina Imaging Corporation Isolated bond pad with conductive via interconnect
JP5853389B2 (ja) * 2011-03-28 2016-02-09 ソニー株式会社 半導体装置及び半導体装置の製造方法。

Also Published As

Publication number Publication date
FR2954831B1 (fr) 2013-02-08
JP2011139069A (ja) 2011-07-14
FR2954831A1 (fr) 2011-07-01
EP2357496A1 (fr) 2011-08-17
EP2357496B1 (fr) 2012-09-05
US20110156055A1 (en) 2011-06-30
US8723187B2 (en) 2014-05-13
JP2017120266A (ja) 2017-07-06

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