JP5155554B2 - ダイオード層を金属層に結合するためのバイアを備えた装置 - Google Patents
ダイオード層を金属層に結合するためのバイアを備えた装置 Download PDFInfo
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- JP5155554B2 JP5155554B2 JP2006323498A JP2006323498A JP5155554B2 JP 5155554 B2 JP5155554 B2 JP 5155554B2 JP 2006323498 A JP2006323498 A JP 2006323498A JP 2006323498 A JP2006323498 A JP 2006323498A JP 5155554 B2 JP5155554 B2 JP 5155554B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 56
- 239000002184 metal Substances 0.000 title claims description 56
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
- 238000001465 metallisation Methods 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims description 6
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 150000004767 nitrides Chemical class 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 238000003491 array Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
110 X線源(「X線」)
112 フォトン
114 目標物(「目標物」)
116 検出器(「検出器」)
118 取得回路
120 システム制御器
124 I/Oシステム
200 バイア構造
202 バイア構造
204 バイア構造
206 バイア構造
210 基材
212 層
214 金属化層(M1)
216 層
218 金属化層(M2)
220 層
222 金属化層(M3)
224 層
226 ダイオード
300 工程のステップ
301 最も高い層
302 工程のステップ
303 最も高い層
304 工程のステップ
305 最も高い層
310 ダイオード通過層
312 遮断層
510 金属化層(M4)
512 バイア構造
514 バイア構造
516 金属積層体
700 ダイオード・バイア
702 ダイオード・バイア
704 ダイオード・バイア
800 方法
810 ブロック
812 ブロック
814 ブロック
816 ブロック
818 ブロック
820 ブロック
822 ブロック
824 ブロック
826 ブロック
828 ブロック
830 ブロック
Claims (7)
- 基材(210)と、
少なくとも1又は複数の金属層、該少なくとも1又は複数の金属層(214、218、222)のうちの最上の金属層の上に配設された誘電体層、及び少なくとも1又は複数の前記金属層のうちの最上の金属層にダイオード層を結合するために、前記誘電体層に形成された1又は複数のバイア(200、202、204、206)を含んでいる第一の面域と、
前記基材に前記ダイオード層を接着するために前記誘電体層から前記基材にかけて形成された1以上のバイア(200、202、204、206)を含んでいる第二の面域と、
を備え、
前記バイアのうちの少なくとも一部が、電気的作用を有しないエッジ・クリア面域に配置されている、
装置。 - 前記ダイオード層は、少なくとも1若しくは複数のフォトダイオード(226)を含む、請求項1に記載の装置。
- 前記少なくとも1又は複数の金属層は、第一の金属化層(214)、第二の金属化層(218)及び第三の金属化層(222)を含んでおり、前記バイアの少なくとも1又は複数は、前記ダイオード層を前記第二の金属化層には接触させずに前記第三の金属化層に接触させることが可能な構造を有する、請求項1に記載の装置。
- 前記少なくとも1又は複数の金属層は、第一の金属化層(214)、第二の金属化層(218)及び第三の金属化層(222)を含んでおり、前記バイアの少なくとも1又は複数は、前記ダイオード層を前記第二の金属化層には接触させずに前記第三の金属化層に接触させることが可能な構造を有し、前記ダイオード層のダイオード(226)は、前記第三の金属化層を介して前記第二の金属化層に接触する、請求項1に記載の装置。
- 前記少なくとも1又は複数の金属層は、第一の金属化層(214)、第二の金属化層(218)及び第三の金属化層(222)を含んでおり、前記バイアの少なくとも1又は複数は、前記ダイオード層を前記第二の金属化層には接触させずに前記第三の金属化層に接触させることが可能な構造を有し、前記第三の金属化層は、モリブデン、モリブデン−タングステン、モリブデン合金、チタン若しくはチタン合金の少なくとも一つ、又はこれらの組み合わせを含んでいる、請求項1に記載の装置。
- 前記少なくとも1又は複数の金属層は、第一の金属化層(214)、第二の金属化層(218)及び第三の金属化層(222)を含んでおり、前記バイアの少なくとも1又は複数は、前記ダイオード層を前記第二の金属化層には接触させずに前記第三の金属化層に接触させることが可能な構造を有し、前記第三の金属化層は、モリブデン、モリブデン−タングステン、モリブデン合金、チタン若しくはチタン合金の少なくとも一つ、又はこれらの組み合わせから成っている、請求項1に記載の装置。
- 前記バイア(200、202、204、206)の少なくとも1又は複数は階段状側壁構造を含んでいる、請求項1に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/291,602 US7759680B2 (en) | 2005-11-30 | 2005-11-30 | Thin-film transistor and diode array for an imager panel or the like |
US11/291,602 | 2005-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007158335A JP2007158335A (ja) | 2007-06-21 |
JP5155554B2 true JP5155554B2 (ja) | 2013-03-06 |
Family
ID=38037993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006323498A Expired - Fee Related JP5155554B2 (ja) | 2005-11-30 | 2006-11-30 | ダイオード層を金属層に結合するためのバイアを備えた装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7759680B2 (ja) |
JP (1) | JP5155554B2 (ja) |
DE (1) | DE102006056995B4 (ja) |
FR (1) | FR2894071B1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7897929B2 (en) * | 2007-12-06 | 2011-03-01 | General Electric Company | Reduced cost pixel design for flat panel x-ray imager |
JP5185013B2 (ja) * | 2008-01-29 | 2013-04-17 | 富士フイルム株式会社 | 電磁波検出素子 |
KR101769587B1 (ko) | 2011-12-08 | 2017-08-21 | 삼성디스플레이 주식회사 | 엑스레이 검출기 및 엑스레이 검출기 구동 방법 |
US8736008B2 (en) | 2012-01-04 | 2014-05-27 | General Electric Company | Photodiode array and methods of fabrication |
US9116249B1 (en) * | 2012-07-26 | 2015-08-25 | Sandia Corporation | Multiple-mode radiation detector |
WO2016061553A1 (en) * | 2014-10-17 | 2016-04-21 | Silverside Detectors Inc. | Fissile neutron detector |
US10317541B2 (en) | 2017-04-14 | 2019-06-11 | Silverside Detectors, Inc. | Advanced fissile neutron detection system and method |
WO2019018032A2 (en) | 2017-04-15 | 2019-01-24 | Silverside Detectors Inc. | ADVANCED THERMAL NEUTRON DETECTORS AND ASSOCIATED METHODS |
CN107634079B (zh) * | 2017-09-19 | 2020-05-08 | 中山晟欣信息科技有限公司 | 光电传感器及其制造方法 |
JP7406887B2 (ja) * | 2019-08-07 | 2023-12-28 | キヤノン株式会社 | 光電変換装置、放射線撮像システム、光電変換システム、移動体 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5812481A (ja) * | 1981-07-15 | 1983-01-24 | Toshiba Corp | 固体撮像素子 |
US4571626A (en) | 1981-09-17 | 1986-02-18 | Matsushita Electric Industrial Co., Ltd. | Solid state area imaging apparatus |
JPH05276442A (ja) * | 1992-03-30 | 1993-10-22 | Hamamatsu Photonics Kk | 残像積分固体撮像デバイス |
JPH1197660A (ja) * | 1997-09-19 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | イメージセンサおよびそれを用いた装置 |
US6835974B2 (en) * | 2002-03-14 | 2004-12-28 | Jeng-Jye Shau | Three dimensional integrated circuits using sub-micron thin-film diodes |
JP2008503086A (ja) | 2004-06-18 | 2008-01-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | X線画像検出器 |
-
2005
- 2005-11-30 US US11/291,602 patent/US7759680B2/en active Active
-
2006
- 2006-11-30 DE DE102006056995.4A patent/DE102006056995B4/de not_active Expired - Fee Related
- 2006-11-30 JP JP2006323498A patent/JP5155554B2/ja not_active Expired - Fee Related
- 2006-11-30 FR FR0655222A patent/FR2894071B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7759680B2 (en) | 2010-07-20 |
JP2007158335A (ja) | 2007-06-21 |
FR2894071A1 (fr) | 2007-06-01 |
DE102006056995B4 (de) | 2018-03-22 |
US20070122948A1 (en) | 2007-05-31 |
DE102006056995A1 (de) | 2007-05-31 |
FR2894071B1 (fr) | 2016-01-01 |
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LAPS | Cancellation because of no payment of annual fees |