JP2007521661A5 - - Google Patents

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Publication number
JP2007521661A5
JP2007521661A5 JP2006534156A JP2006534156A JP2007521661A5 JP 2007521661 A5 JP2007521661 A5 JP 2007521661A5 JP 2006534156 A JP2006534156 A JP 2006534156A JP 2006534156 A JP2006534156 A JP 2006534156A JP 2007521661 A5 JP2007521661 A5 JP 2007521661A5
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JP
Japan
Prior art keywords
diffusion barrier
dielectric layer
interlayer dielectric
conductive diffusion
direct contact
Prior art date
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Application number
JP2006534156A
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English (en)
Japanese (ja)
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JP4829792B2 (ja
JP2007521661A (ja
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Publication date
Priority claimed from US10/605,444 external-priority patent/US6876028B1/en
Application filed filed Critical
Publication of JP2007521661A publication Critical patent/JP2007521661A/ja
Publication of JP2007521661A5 publication Critical patent/JP2007521661A5/ja
Application granted granted Critical
Publication of JP4829792B2 publication Critical patent/JP4829792B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006534156A 2003-09-30 2004-09-30 電子デバイス及びこれを製造する方法 Expired - Fee Related JP4829792B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/605,444 2003-09-30
US10/605,444 US6876028B1 (en) 2003-09-30 2003-09-30 Metal-insulator-metal capacitor and method of fabrication
PCT/US2004/032405 WO2005034201A2 (en) 2003-09-30 2004-09-30 Metal-insulator-metal capacitor and method of fabrication

Publications (3)

Publication Number Publication Date
JP2007521661A JP2007521661A (ja) 2007-08-02
JP2007521661A5 true JP2007521661A5 (enExample) 2007-11-08
JP4829792B2 JP4829792B2 (ja) 2011-12-07

Family

ID=34375679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006534156A Expired - Fee Related JP4829792B2 (ja) 2003-09-30 2004-09-30 電子デバイス及びこれを製造する方法

Country Status (6)

Country Link
US (2) US6876028B1 (enExample)
EP (1) EP1671358A4 (enExample)
JP (1) JP4829792B2 (enExample)
KR (1) KR100861855B1 (enExample)
CN (1) CN100568507C (enExample)
WO (1) WO2005034201A2 (enExample)

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US8446706B1 (en) * 2007-10-10 2013-05-21 Kovio, Inc. High precision capacitors
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US20100055422A1 (en) * 2008-08-28 2010-03-04 Bob Kong Electroless Deposition of Platinum on Copper
US8563336B2 (en) 2008-12-23 2013-10-22 International Business Machines Corporation Method for forming thin film resistor and terminal bond pad simultaneously
US8298902B2 (en) * 2009-03-18 2012-10-30 International Business Machines Corporation Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit
CN101989621B (zh) * 2009-08-06 2012-03-07 中芯国际集成电路制造(上海)有限公司 Mim电容器及其制造方法
CN102420103B (zh) * 2011-05-26 2013-09-11 上海华力微电子有限公司 铜大马士革工艺金属-绝缘层-金属电容结构及制造工艺
US8896125B2 (en) * 2011-07-05 2014-11-25 Sony Corporation Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
FR2994019B1 (fr) * 2012-07-25 2016-05-06 Commissariat Energie Atomique Procede pour la realisation d'une capacite
US9269663B2 (en) * 2012-12-06 2016-02-23 Texas Instruments Incorporated Single pattern high precision capacitor
US9929050B2 (en) * 2013-07-16 2018-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming three-dimensional integrated circuit (3DIC) stacking structure
CN108257942B (zh) * 2016-12-28 2020-06-09 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10546915B2 (en) * 2017-12-26 2020-01-28 International Business Machines Corporation Buried MIM capacitor structure with landing pads
JP2018186285A (ja) * 2018-07-03 2018-11-22 ルネサスエレクトロニクス株式会社 半導体装置
WO2020034063A1 (en) * 2018-08-13 2020-02-20 Yangtze Memory Technologies Co., Ltd. Bonding contacts having capping layer and method for forming the same
WO2023038668A1 (en) * 2021-09-10 2023-03-16 Microchip Technology Incorporated Metal-insulator-metal (mim) capacitor module
US11769793B2 (en) 2021-09-10 2023-09-26 Microchip Technology Incorporated Metal-insulator-metal (MIM) capacitor module
DE112022004397T5 (de) * 2021-09-15 2024-06-20 Microchip Technology Incorporated Integrierte schaltungsstruktur, die ein metall-isolator-metall (mim) kondensatormodul und ein dünnschichtwiderstandsmodul (tfr) aufweist
US12414359B2 (en) 2021-09-15 2025-09-09 Microchip Technology Incorporated Integrated circuit structure including a metal-insulator-metal (MIM) capacitor module and a thin-film resistor (TFR) module
US12414312B2 (en) * 2021-12-20 2025-09-09 International Business Machines Corporation Back-end-of-line thin film resistor
JP2024138815A (ja) * 2023-03-27 2024-10-09 株式会社東芝 半導体装置及び半導体装置の製造方法

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US6451664B1 (en) * 2001-01-30 2002-09-17 Infineon Technologies Ag Method of making a MIM capacitor with self-passivating plates
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JP4065670B2 (ja) * 2001-08-09 2008-03-26 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
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US6583491B1 (en) * 2002-05-09 2003-06-24 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication having microelectronic capacitor structure fabricated therein
US6720608B2 (en) * 2002-05-22 2004-04-13 United Microelectronics Corp. Metal-insulator-metal capacitor structure

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