CN100568507C - 金属-绝缘体-金属电容器及制造方法 - Google Patents

金属-绝缘体-金属电容器及制造方法 Download PDF

Info

Publication number
CN100568507C
CN100568507C CNB2004800282572A CN200480028257A CN100568507C CN 100568507 C CN100568507 C CN 100568507C CN B2004800282572 A CNB2004800282572 A CN B2004800282572A CN 200480028257 A CN200480028257 A CN 200480028257A CN 100568507 C CN100568507 C CN 100568507C
Authority
CN
China
Prior art keywords
diffusion barrier
barrier layer
conductive diffusion
layer
mim
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004800282572A
Other languages
English (en)
Chinese (zh)
Other versions
CN101160661A (zh
Inventor
道格拉斯·D·库尔鲍
埃比尼泽·E·埃施安
杰弗里·P·甘比诺
何忠祥
维德亚·拉马钱德兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN101160661A publication Critical patent/CN101160661A/zh
Application granted granted Critical
Publication of CN100568507C publication Critical patent/CN100568507C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7687—Thin films associated with contacts of capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB2004800282572A 2003-09-30 2004-09-30 金属-绝缘体-金属电容器及制造方法 Expired - Fee Related CN100568507C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/605,444 2003-09-30
US10/605,444 US6876028B1 (en) 2003-09-30 2003-09-30 Metal-insulator-metal capacitor and method of fabrication

Publications (2)

Publication Number Publication Date
CN101160661A CN101160661A (zh) 2008-04-09
CN100568507C true CN100568507C (zh) 2009-12-09

Family

ID=34375679

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800282572A Expired - Fee Related CN100568507C (zh) 2003-09-30 2004-09-30 金属-绝缘体-金属电容器及制造方法

Country Status (6)

Country Link
US (2) US6876028B1 (enExample)
EP (1) EP1671358A4 (enExample)
JP (1) JP4829792B2 (enExample)
KR (1) KR100861855B1 (enExample)
CN (1) CN100568507C (enExample)
WO (1) WO2005034201A2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6916722B2 (en) * 2002-12-02 2005-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method to fabricate high reliable metal capacitor within copper back-end process
KR100524963B1 (ko) * 2003-05-14 2005-10-31 삼성전자주식회사 금속 배선 및 금속 저항을 포함하는 반도체 소자 및 그제조 방법
US7674682B2 (en) * 2003-10-30 2010-03-09 Texas Instruments Incorporated Capacitor integration at top-metal level with a protective cladding for copper surface protection
US20060148192A1 (en) * 2005-01-04 2006-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Damascene MIM capacitor structure with self-aligned oxidation fabrication process
US20060197183A1 (en) * 2005-03-01 2006-09-07 International Business Machines Corporation Improved mim capacitor structure and process
FR2884649B1 (fr) * 2005-04-19 2007-07-20 St Microelectronics Sa Procede de fabrication d'un circuit integre comprenant un condensateur avec une electrode en cuivre
JP5154744B2 (ja) * 2005-07-14 2013-02-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8106438B2 (en) * 2005-08-22 2012-01-31 Micron Technology, Inc. Stud capacitor device and fabrication method
US7361950B2 (en) * 2005-09-12 2008-04-22 International Business Machines Corporation Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectric
DE102005047111B3 (de) * 2005-09-30 2007-06-21 Infineon Technologies Ag Verfahren zur Herstellung eines MIM-Kondensators
US7737020B1 (en) * 2005-12-21 2010-06-15 Xilinx, Inc. Method of fabricating CMOS devices using fluid-based dielectric materials
JP2007294514A (ja) * 2006-04-21 2007-11-08 Renesas Technology Corp 半導体装置
US7488643B2 (en) * 2006-06-21 2009-02-10 International Business Machines Corporation MIM capacitor and method of making same
US7601604B2 (en) * 2006-10-12 2009-10-13 Atmel Corporation Method for fabricating conducting plates for a high-Q MIM capacitor
KR100850642B1 (ko) * 2007-02-01 2008-08-07 고려대학교 산학협력단 ＢａＴｉ４Ｏ９를 이용한 ＭＩＭ 캐패시터 및 그의제조방법
KR100868634B1 (ko) * 2007-05-04 2008-11-12 동부일렉트로닉스 주식회사 반도체 소자 및 반도체 소자의 제조 방법
US7994639B2 (en) * 2007-07-31 2011-08-09 International Business Machines Corporation Microelectronic structure including dual damascene structure and high contrast alignment mark
US8446706B1 (en) * 2007-10-10 2013-05-21 Kovio, Inc. High precision capacitors
JP5251107B2 (ja) * 2007-12-17 2013-07-31 三菱電機株式会社 半導体装置
US20100055422A1 (en) * 2008-08-28 2010-03-04 Bob Kong Electroless Deposition of Platinum on Copper
US8563336B2 (en) * 2008-12-23 2013-10-22 International Business Machines Corporation Method for forming thin film resistor and terminal bond pad simultaneously
US8298902B2 (en) 2009-03-18 2012-10-30 International Business Machines Corporation Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit
CN101989621B (zh) * 2009-08-06 2012-03-07 中芯国际集成电路制造(上海)有限公司 Mim电容器及其制造方法
CN102420103B (zh) * 2011-05-26 2013-09-11 上海华力微电子有限公司 铜大马士革工艺金属-绝缘层-金属电容结构及制造工艺
US8896125B2 (en) * 2011-07-05 2014-11-25 Sony Corporation Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
FR2994019B1 (fr) * 2012-07-25 2016-05-06 Commissariat Energie Atomique Procede pour la realisation d'une capacite
US9269663B2 (en) * 2012-12-06 2016-02-23 Texas Instruments Incorporated Single pattern high precision capacitor
US9929050B2 (en) * 2013-07-16 2018-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming three-dimensional integrated circuit (3DIC) stacking structure
CN108257942B (zh) * 2016-12-28 2020-06-09 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10546915B2 (en) * 2017-12-26 2020-01-28 International Business Machines Corporation Buried MIM capacitor structure with landing pads
JP2018186285A (ja) * 2018-07-03 2018-11-22 ルネサスエレクトロニクス株式会社 半導体装置
WO2020034063A1 (en) 2018-08-13 2020-02-20 Yangtze Memory Technologies Co., Ltd. Bonding contacts having capping layer and method for forming the same
WO2023038668A1 (en) * 2021-09-10 2023-03-16 Microchip Technology Incorporated Metal-insulator-metal (mim) capacitor module
US11769793B2 (en) * 2021-09-10 2023-09-26 Microchip Technology Incorporated Metal-insulator-metal (MIM) capacitor module
WO2023043485A1 (en) * 2021-09-15 2023-03-23 Microchip Technology Incorporated Integrated circuit structure including a metal-insulator-metal (mim) capacitor module and a thin-film resistor (tfr) module
US12414359B2 (en) 2021-09-15 2025-09-09 Microchip Technology Incorporated Integrated circuit structure including a metal-insulator-metal (MIM) capacitor module and a thin-film resistor (TFR) module
US12414312B2 (en) * 2021-12-20 2025-09-09 International Business Machines Corporation Back-end-of-line thin film resistor
JP2024138815A (ja) * 2023-03-27 2024-10-09 株式会社東芝 半導体装置及び半導体装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329233B1 (en) * 2000-06-23 2001-12-11 United Microelectronics Corp. Method of manufacturing photodiode CMOS image sensor
US6461914B1 (en) * 2001-08-29 2002-10-08 Motorola, Inc. Process for making a MIM capacitor
US20020179955A1 (en) * 2001-05-30 2002-12-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising MIM-type capacitor and method of manufacturing the same
US6500724B1 (en) * 2000-08-21 2002-12-31 Motorola, Inc. Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material
US20030032234A1 (en) * 2001-08-09 2003-02-13 Masayuki Suzuki Semiconductor integrated circuit device and method of manufacturing the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406447A (en) 1992-01-06 1995-04-11 Nec Corporation Capacitor used in an integrated circuit and comprising opposing electrodes having barrier metal films in contact with a dielectric film
US5380546A (en) * 1993-06-09 1995-01-10 Microelectronics And Computer Technology Corporation Multilevel metallization process for electronic components
JP3297220B2 (ja) * 1993-10-29 2002-07-02 株式会社東芝 半導体装置の製造方法および半導体装置
TW365031B (en) * 1996-10-31 1999-07-21 Texas Instruments Inc TiN+Al films and processes
US6025226A (en) * 1998-01-15 2000-02-15 International Business Machines Corporation Method of forming a capacitor and a capacitor formed using the method
US6249055B1 (en) * 1998-02-03 2001-06-19 Advanced Micro Devices, Inc. Self-encapsulated copper metallization
JP2000332203A (ja) * 1999-05-17 2000-11-30 Hitachi Ltd 半導体装置およびその製造方法
JP3967544B2 (ja) * 1999-12-14 2007-08-29 株式会社東芝 Ｍｉｍキャパシタ
US6680520B2 (en) * 2000-03-14 2004-01-20 International Business Machines Corporation Method and structure for forming precision MIM fusible circuit elements using fuses and antifuses
TW479310B (en) * 2000-03-31 2002-03-11 Ibm Capacitor structure and method of making same
US6368953B1 (en) 2000-05-09 2002-04-09 International Business Machines Corporation Encapsulated metal structures for semiconductor devices and MIM capacitors including the same
US6329234B1 (en) 2000-07-24 2001-12-11 Taiwan Semiconductor Manufactuirng Company Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow
US6451664B1 (en) * 2001-01-30 2002-09-17 Infineon Technologies Ag Method of making a MIM capacitor with self-passivating plates
US6710425B2 (en) * 2001-04-26 2004-03-23 Zeevo, Inc. Structure to increase density of MIM capacitors between adjacent metal layers in an integrated circuit
US6338999B1 (en) * 2001-06-15 2002-01-15 Silicon Integrated Systems Corp. Method for forming metal capacitors with a damascene process
US6743489B2 (en) * 2001-10-11 2004-06-01 Odl, Incorporated Insulated glass and method of making same
KR100415537B1 (ko) * 2001-11-03 2004-01-24 주식회사 하이닉스반도체 반도체 소자 제조 방법
US6583491B1 (en) * 2002-05-09 2003-06-24 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication having microelectronic capacitor structure fabricated therein
US6720608B2 (en) * 2002-05-22 2004-04-13 United Microelectronics Corp. Metal-insulator-metal capacitor structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329233B1 (en) * 2000-06-23 2001-12-11 United Microelectronics Corp. Method of manufacturing photodiode CMOS image sensor
US6500724B1 (en) * 2000-08-21 2002-12-31 Motorola, Inc. Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material
US20020179955A1 (en) * 2001-05-30 2002-12-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising MIM-type capacitor and method of manufacturing the same
US20030032234A1 (en) * 2001-08-09 2003-02-13 Masayuki Suzuki Semiconductor integrated circuit device and method of manufacturing the same
US6461914B1 (en) * 2001-08-29 2002-10-08 Motorola, Inc. Process for making a MIM capacitor

Also Published As

Publication number Publication date
US20050067701A1 (en) 2005-03-31
JP2007521661A (ja) 2007-08-02
US20050156278A1 (en) 2005-07-21
EP1671358A4 (en) 2009-10-21
US6876028B1 (en) 2005-04-05
EP1671358A2 (en) 2006-06-21
WO2005034201A3 (en) 2007-12-06
KR100861855B1 (ko) 2008-10-07
WO2005034201A2 (en) 2005-04-14
JP4829792B2 (ja) 2011-12-07
CN101160661A (zh) 2008-04-09
KR20060093698A (ko) 2006-08-25

Similar Documents

Publication Publication Date Title
CN100568507C (zh) 金属-绝缘体-金属电容器及制造方法
CN109801896B (zh) 高密度金属-绝缘体-金属的电容器
US7223654B2 (en) MIM capacitor and method of fabricating same
US8390038B2 (en) MIM capacitor and method of making same
CN102956439B (zh) 金属绝缘体金属电容器及制造方法
CN103811414B (zh) 铜蚀刻集成方法
US20060197183A1 (en) Improved mim capacitor structure and process
US11437312B2 (en) High performance metal insulator metal capacitor
US6483142B1 (en) Dual damascene structure having capacitors
TWI389297B (zh) 在半導體裝置中之金屬-絕緣體-金屬（ｍｉｍ）電容及其方法
US6809398B2 (en) Metal-to-metal antifuse structure and fabrication method
US7323736B2 (en) Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits
CN1862805A (zh) 接地屏蔽件及其方法
US6853082B1 (en) Method and structure for integrating metal insulator metal capacitor with copper
US7169680B2 (en) Method for fabricating a metal-insulator-metal capacitor
US11699650B2 (en) Integrated circuit structure with capacitor electrodes in different ILD layers, and related methods
US20230395649A1 (en) Metal-insulator-metal (mim) capacitor module
CN100373546C (zh) 金属-绝缘层-金属电容的制作方法
TWI291759B (en) Method for fabricating a metal-insulator-metal capacitor

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20171106

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171106

Address after: American New York

Patentee after: Core USA second LLC

Address before: New York grams of Armand

Patentee before: International Business Machines Corp.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20171108

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171108

Address after: American New York

Patentee after: Core USA second LLC

Address before: New York grams of Armand

Patentee before: International Business Machines Corp.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091209

CF01 Termination of patent right due to non-payment of annual fee