JP4829792B2 - 電子デバイス及びこれを製造する方法 - Google Patents

電子デバイス及びこれを製造する方法 Download PDF

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Publication number
JP4829792B2
JP4829792B2 JP2006534156A JP2006534156A JP4829792B2 JP 4829792 B2 JP4829792 B2 JP 4829792B2 JP 2006534156 A JP2006534156 A JP 2006534156A JP 2006534156 A JP2006534156 A JP 2006534156A JP 4829792 B2 JP4829792 B2 JP 4829792B2
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Prior art keywords
diffusion barrier
conductor
mim
conductive diffusion
direct contact
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Expired - Fee Related
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JP2006534156A
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Japanese (ja)
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JP2007521661A5 (enExample
JP2007521661A (ja
Inventor
クールバウフ、ダグラス、ディー
エーシュン、エベンザー、イー
ガンビーノ、ジェフリー、ピー
ホー、チョン、シャン
ラマチャンドラン、ヴェーダ
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7687—Thin films associated with contacts of capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006534156A 2003-09-30 2004-09-30 電子デバイス及びこれを製造する方法 Expired - Fee Related JP4829792B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/605,444 US6876028B1 (en) 2003-09-30 2003-09-30 Metal-insulator-metal capacitor and method of fabrication
US10/605,444 2003-09-30
PCT/US2004/032405 WO2005034201A2 (en) 2003-09-30 2004-09-30 Metal-insulator-metal capacitor and method of fabrication

Publications (3)

Publication Number Publication Date
JP2007521661A JP2007521661A (ja) 2007-08-02
JP2007521661A5 JP2007521661A5 (enExample) 2007-11-08
JP4829792B2 true JP4829792B2 (ja) 2011-12-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006534156A Expired - Fee Related JP4829792B2 (ja) 2003-09-30 2004-09-30 電子デバイス及びこれを製造する方法

Country Status (6)

Country Link
US (2) US6876028B1 (enExample)
EP (1) EP1671358A4 (enExample)
JP (1) JP4829792B2 (enExample)
KR (1) KR100861855B1 (enExample)
CN (1) CN100568507C (enExample)
WO (1) WO2005034201A2 (enExample)

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KR100524963B1 (ko) * 2003-05-14 2005-10-31 삼성전자주식회사 금속 배선 및 금속 저항을 포함하는 반도체 소자 및 그제조 방법
US7674682B2 (en) * 2003-10-30 2010-03-09 Texas Instruments Incorporated Capacitor integration at top-metal level with a protective cladding for copper surface protection
US20060148192A1 (en) * 2005-01-04 2006-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Damascene MIM capacitor structure with self-aligned oxidation fabrication process
US20060197183A1 (en) * 2005-03-01 2006-09-07 International Business Machines Corporation Improved mim capacitor structure and process
FR2884649B1 (fr) * 2005-04-19 2007-07-20 St Microelectronics Sa Procede de fabrication d'un circuit integre comprenant un condensateur avec une electrode en cuivre
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US8106438B2 (en) * 2005-08-22 2012-01-31 Micron Technology, Inc. Stud capacitor device and fabrication method
US7361950B2 (en) * 2005-09-12 2008-04-22 International Business Machines Corporation Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectric
DE102005047111B3 (de) * 2005-09-30 2007-06-21 Infineon Technologies Ag Verfahren zur Herstellung eines MIM-Kondensators
US7737020B1 (en) * 2005-12-21 2010-06-15 Xilinx, Inc. Method of fabricating CMOS devices using fluid-based dielectric materials
JP2007294514A (ja) * 2006-04-21 2007-11-08 Renesas Technology Corp 半導体装置
US7488643B2 (en) * 2006-06-21 2009-02-10 International Business Machines Corporation MIM capacitor and method of making same
US7601604B2 (en) * 2006-10-12 2009-10-13 Atmel Corporation Method for fabricating conducting plates for a high-Q MIM capacitor
KR100850642B1 (ko) * 2007-02-01 2008-08-07 고려대학교 산학협력단 ＢａＴｉ４Ｏ９를 이용한 ＭＩＭ 캐패시터 및 그의제조방법
KR100868634B1 (ko) * 2007-05-04 2008-11-12 동부일렉트로닉스 주식회사 반도체 소자 및 반도체 소자의 제조 방법
US7994639B2 (en) * 2007-07-31 2011-08-09 International Business Machines Corporation Microelectronic structure including dual damascene structure and high contrast alignment mark
US8446706B1 (en) * 2007-10-10 2013-05-21 Kovio, Inc. High precision capacitors
JP5251107B2 (ja) * 2007-12-17 2013-07-31 三菱電機株式会社 半導体装置
US20100055422A1 (en) * 2008-08-28 2010-03-04 Bob Kong Electroless Deposition of Platinum on Copper
US8563336B2 (en) * 2008-12-23 2013-10-22 International Business Machines Corporation Method for forming thin film resistor and terminal bond pad simultaneously
US8298902B2 (en) * 2009-03-18 2012-10-30 International Business Machines Corporation Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit
CN101989621B (zh) * 2009-08-06 2012-03-07 中芯国际集成电路制造(上海)有限公司 Mim电容器及其制造方法
CN102420103B (zh) * 2011-05-26 2013-09-11 上海华力微电子有限公司 铜大马士革工艺金属-绝缘层-金属电容结构及制造工艺
US8896125B2 (en) * 2011-07-05 2014-11-25 Sony Corporation Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
FR2994019B1 (fr) * 2012-07-25 2016-05-06 Commissariat Energie Atomique Procede pour la realisation d'une capacite
US9269663B2 (en) * 2012-12-06 2016-02-23 Texas Instruments Incorporated Single pattern high precision capacitor
US9929050B2 (en) * 2013-07-16 2018-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming three-dimensional integrated circuit (3DIC) stacking structure
CN108257942B (zh) * 2016-12-28 2020-06-09 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10546915B2 (en) 2017-12-26 2020-01-28 International Business Machines Corporation Buried MIM capacitor structure with landing pads
JP2018186285A (ja) * 2018-07-03 2018-11-22 ルネサスエレクトロニクス株式会社 半導体装置
WO2020034063A1 (en) * 2018-08-13 2020-02-20 Yangtze Memory Technologies Co., Ltd. Bonding contacts having capping layer and method for forming the same
WO2023038668A1 (en) * 2021-09-10 2023-03-16 Microchip Technology Incorporated Metal-insulator-metal (mim) capacitor module
US11769793B2 (en) 2021-09-10 2023-09-26 Microchip Technology Incorporated Metal-insulator-metal (MIM) capacitor module
US12414359B2 (en) 2021-09-15 2025-09-09 Microchip Technology Incorporated Integrated circuit structure including a metal-insulator-metal (MIM) capacitor module and a thin-film resistor (TFR) module
WO2023043485A1 (en) * 2021-09-15 2023-03-23 Microchip Technology Incorporated Integrated circuit structure including a metal-insulator-metal (mim) capacitor module and a thin-film resistor (tfr) module
US12414312B2 (en) * 2021-12-20 2025-09-09 International Business Machines Corporation Back-end-of-line thin film resistor
JP2024138815A (ja) * 2023-03-27 2024-10-09 株式会社東芝 半導体装置及び半導体装置の製造方法

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JPH07307338A (ja) * 1993-10-29 1995-11-21 Toshiba Corp 半導体装置の製造方法および半導体装置
JP2000332203A (ja) * 1999-05-17 2000-11-30 Hitachi Ltd 半導体装置およびその製造方法
JP2001237375A (ja) * 1999-12-14 2001-08-31 Toshiba Corp Ｍｉｍキャパシタ
JP2001308280A (ja) * 2000-03-14 2001-11-02 Internatl Business Mach Corp <Ibm> 精密回路素子の構造及びその形成方法
JP2001313372A (ja) * 2000-03-31 2001-11-09 Internatl Business Mach Corp <Ibm> キャパシタ構造およびその製造方法
US6338999B1 (en) * 2001-06-15 2002-01-15 Silicon Integrated Systems Corp. Method for forming metal capacitors with a damascene process
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JP2003060081A (ja) * 2001-08-09 2003-02-28 Hitachi Ltd 半導体集積回路装置の製造方法
WO2003021661A2 (en) * 2001-08-29 2003-03-13 Motorola, Inc., A Corporation Of The State Of Delaware Process for making a mim capacitor
US20030072899A1 (en) * 2001-10-11 2003-04-17 Compton Cheryl Crozier Insulated glass and method of making same
US6583491B1 (en) * 2002-05-09 2003-06-24 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication having microelectronic capacitor structure fabricated therein

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Publication number Priority date Publication date Assignee Title
JPH07307338A (ja) * 1993-10-29 1995-11-21 Toshiba Corp 半導体装置の製造方法および半導体装置
JP2000332203A (ja) * 1999-05-17 2000-11-30 Hitachi Ltd 半導体装置およびその製造方法
JP2001237375A (ja) * 1999-12-14 2001-08-31 Toshiba Corp Ｍｉｍキャパシタ
JP2001308280A (ja) * 2000-03-14 2001-11-02 Internatl Business Mach Corp <Ibm> 精密回路素子の構造及びその形成方法
JP2001313372A (ja) * 2000-03-31 2001-11-09 Internatl Business Mach Corp <Ibm> キャパシタ構造およびその製造方法
JP2002026018A (ja) * 2000-05-09 2002-01-25 Internatl Business Mach Corp <Ibm> 半導体装置用のカプセル化金属構造および同構造を含むｍｉｍキャパシタ
JP2003051501A (ja) * 2001-05-30 2003-02-21 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6338999B1 (en) * 2001-06-15 2002-01-15 Silicon Integrated Systems Corp. Method for forming metal capacitors with a damascene process
JP2003060081A (ja) * 2001-08-09 2003-02-28 Hitachi Ltd 半導体集積回路装置の製造方法
WO2003021661A2 (en) * 2001-08-29 2003-03-13 Motorola, Inc., A Corporation Of The State Of Delaware Process for making a mim capacitor
US20030072899A1 (en) * 2001-10-11 2003-04-17 Compton Cheryl Crozier Insulated glass and method of making same
US6583491B1 (en) * 2002-05-09 2003-06-24 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication having microelectronic capacitor structure fabricated therein

Also Published As

Publication number Publication date
US20050156278A1 (en) 2005-07-21
WO2005034201A2 (en) 2005-04-14
KR100861855B1 (ko) 2008-10-07
KR20060093698A (ko) 2006-08-25
CN101160661A (zh) 2008-04-09
US6876028B1 (en) 2005-04-05
US20050067701A1 (en) 2005-03-31
JP2007521661A (ja) 2007-08-02
CN100568507C (zh) 2009-12-09
EP1671358A4 (en) 2009-10-21
EP1671358A2 (en) 2006-06-21
WO2005034201A3 (en) 2007-12-06

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