CN1917148A - 半导体器件及其制造方法、以及薄膜器件 - Google Patents
半导体器件及其制造方法、以及薄膜器件 Download PDFInfo
- Publication number
- CN1917148A CN1917148A CNA2006101156277A CN200610115627A CN1917148A CN 1917148 A CN1917148 A CN 1917148A CN A2006101156277 A CNA2006101156277 A CN A2006101156277A CN 200610115627 A CN200610115627 A CN 200610115627A CN 1917148 A CN1917148 A CN 1917148A
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- Prior art keywords
- film
- titanium nitride
- nitride film
- semiconductor device
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- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005236935 | 2005-08-17 | ||
JP2005236935 | 2005-08-17 | ||
JP2006209930 | 2006-08-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1917148A true CN1917148A (zh) | 2007-02-21 |
CN100543939C CN100543939C (zh) | 2009-09-23 |
Family
ID=37738101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101156277A Expired - Fee Related CN100543939C (zh) | 2005-08-17 | 2006-08-17 | 半导体器件及其制造方法、以及薄膜器件 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070040198A1 (zh) |
CN (1) | CN100543939C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107710412A (zh) * | 2015-08-31 | 2018-02-16 | 赛普拉斯半导体公司 | 在预先图案化的底部电极和阻挡氧化层上制造铁电随机存取存储器的方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4928098B2 (ja) * | 2005-08-03 | 2012-05-09 | セイコーエプソン株式会社 | 強誘電体キャパシタの製造方法 |
JP5010121B2 (ja) * | 2005-08-17 | 2012-08-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4600322B2 (ja) * | 2006-03-14 | 2010-12-15 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
JP4164700B2 (ja) * | 2006-05-24 | 2008-10-15 | セイコーエプソン株式会社 | 強誘電体メモリおよびその製造方法 |
CN106446352A (zh) * | 2016-08-31 | 2017-02-22 | 郑州航空工业管理学院 | 金属化聚丙烯薄膜电容器多响应参数优化方法 |
KR102575405B1 (ko) * | 2016-12-06 | 2023-09-06 | 삼성전자주식회사 | 자기 저항 메모리 소자 및 그 제조 방법 |
JP2023047913A (ja) * | 2021-09-27 | 2023-04-06 | 富士フイルム株式会社 | 圧電積層体及び圧電素子 |
-
2006
- 2006-02-22 US US11/358,077 patent/US20070040198A1/en not_active Abandoned
- 2006-08-17 CN CNB2006101156277A patent/CN100543939C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107710412A (zh) * | 2015-08-31 | 2018-02-16 | 赛普拉斯半导体公司 | 在预先图案化的底部电极和阻挡氧化层上制造铁电随机存取存储器的方法 |
CN107710412B (zh) * | 2015-08-31 | 2019-09-24 | 赛普拉斯半导体公司 | 在预先图案化的底部电极和阻挡氧化层上制造铁电随机存取存储器的方法 |
CN110571218A (zh) * | 2015-08-31 | 2019-12-13 | 赛普拉斯半导体公司 | 制造铁电随机存取存储器的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070040198A1 (en) | 2007-02-22 |
CN100543939C (zh) | 2009-09-23 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kawasaki, Kanagawa, Japan Applicant before: Fujitsu Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
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CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090923 Termination date: 20130817 |