CN1207786C - 半导体存储装置及其制造方法 - Google Patents
半导体存储装置及其制造方法 Download PDFInfo
- Publication number
- CN1207786C CN1207786C CNB021074275A CN02107427A CN1207786C CN 1207786 C CN1207786 C CN 1207786C CN B021074275 A CNB021074275 A CN B021074275A CN 02107427 A CN02107427 A CN 02107427A CN 1207786 C CN1207786 C CN 1207786C
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- Prior art keywords
- film
- metal
- semiconductor storage
- barrier layer
- lower electrode
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000003860 storage Methods 0.000 title claims description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 171
- 239000002184 metal Substances 0.000 claims abstract description 168
- 150000004767 nitrides Chemical class 0.000 claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 78
- 230000004888 barrier function Effects 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 30
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 24
- 239000011229 interlayer Substances 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 17
- 229910052707 ruthenium Inorganic materials 0.000 claims description 12
- 229910052741 iridium Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910004121 SrRuO Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005755 formation reaction Methods 0.000 description 16
- 238000000137 annealing Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910020684 PbZr Inorganic materials 0.000 description 3
- 229910019899 RuO Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- FLDSMVTWEZKONL-AWEZNQCLSA-N 5,5-dimethyl-N-[(3S)-5-methyl-4-oxo-2,3-dihydro-1,5-benzoxazepin-3-yl]-1,4,7,8-tetrahydrooxepino[4,5-c]pyrazole-3-carboxamide Chemical compound CC1(CC2=C(NN=C2C(=O)N[C@@H]2C(N(C3=C(OC2)C=CC=C3)C)=O)CCO1)C FLDSMVTWEZKONL-AWEZNQCLSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001075485 | 2001-03-16 | ||
JP2001075485A JP2002280523A (ja) | 2001-03-16 | 2001-03-16 | 半導体記憶装置とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1375876A CN1375876A (zh) | 2002-10-23 |
CN1207786C true CN1207786C (zh) | 2005-06-22 |
Family
ID=18932556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021074275A Expired - Fee Related CN1207786C (zh) | 2001-03-16 | 2002-03-15 | 半导体存储装置及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6730955B2 (zh) |
EP (1) | EP1241709A2 (zh) |
JP (1) | JP2002280523A (zh) |
KR (1) | KR20020073443A (zh) |
CN (1) | CN1207786C (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2361244B (en) * | 2000-04-14 | 2004-02-11 | Trikon Holdings Ltd | A method of depositing dielectric |
KR100481853B1 (ko) * | 2002-07-26 | 2005-04-11 | 삼성전자주식회사 | 확장된 플레이트 라인을 갖는 강유전체 메모리소자 및 그제조방법 |
KR100459733B1 (ko) * | 2002-12-30 | 2004-12-03 | 삼성전자주식회사 | 이중 캡핑막을 갖는 반도체 소자의 배선 및 그 형성 방법 |
US20050070043A1 (en) * | 2003-09-30 | 2005-03-31 | Koji Yamakawa | Semiconductor device and method for manufacturing the same |
JP2007036126A (ja) * | 2005-07-29 | 2007-02-08 | Fujitsu Ltd | 半導体装置とその製造方法 |
JP4617227B2 (ja) * | 2005-09-01 | 2011-01-19 | 富士通セミコンダクター株式会社 | 強誘電体メモリ装置およびその製造方法 |
US20080137262A1 (en) * | 2006-12-12 | 2008-06-12 | Texas Instruments Inc. | Methods and systems for capacitors |
JP5621228B2 (ja) * | 2009-08-27 | 2014-11-12 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP5626010B2 (ja) | 2011-02-25 | 2014-11-19 | 富士通株式会社 | 半導体装置及びその製造方法、電源装置 |
JP2012208294A (ja) * | 2011-03-29 | 2012-10-25 | Seiko Epson Corp | 電気光学装置の製造方法、電気光学装置、投射型表示装置および電子機器 |
US9177826B2 (en) * | 2012-02-02 | 2015-11-03 | Globalfoundries Inc. | Methods of forming metal nitride materials |
WO2016170978A1 (ja) | 2015-04-20 | 2016-10-27 | 富士電機株式会社 | 半導体装置 |
CN106716601B (zh) * | 2015-04-20 | 2019-08-06 | 富士电机株式会社 | 半导体装置 |
CN105140199B (zh) * | 2015-08-11 | 2018-06-29 | 上海华虹宏力半导体制造有限公司 | 顶层金属薄膜结构以及铝制程工艺方法 |
DE102017210585B3 (de) * | 2017-06-23 | 2018-09-27 | Robert Bosch Gmbh | Bondpadschichtsystem, Gassensor und Verfahren zur Herstellung eines Gassensors |
CN110112119B (zh) * | 2018-02-01 | 2021-02-09 | 联华电子股份有限公司 | 位线的制作方法 |
KR102305342B1 (ko) * | 2019-11-14 | 2021-09-24 | 울산과학기술원 | 2차원 강유전성 물질을 이용한 비휘발성 3진 메모리 소자 및 이의 제조 방법 |
CN112736198B (zh) * | 2020-12-31 | 2023-06-02 | 上海集成电路装备材料产业创新中心有限公司 | 一种阻变存储器及其制备方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2874512B2 (ja) | 1993-05-13 | 1999-03-24 | 日本電気株式会社 | 薄膜キャパシタ及びその製造方法 |
JP3319869B2 (ja) * | 1993-06-24 | 2002-09-03 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
JPH07142597A (ja) * | 1993-11-12 | 1995-06-02 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
JP3461398B2 (ja) | 1994-01-13 | 2003-10-27 | ローム株式会社 | 誘電体キャパシタおよびその製造方法 |
KR0144932B1 (ko) * | 1995-01-26 | 1998-07-01 | 김광호 | 반도체 장치의 캐패시터 및 그 제조방법 |
JPH08236719A (ja) | 1995-03-01 | 1996-09-13 | Hitachi Ltd | 白金薄膜、半導体装置及びそれらの製造方法 |
JP3417167B2 (ja) * | 1995-09-29 | 2003-06-16 | ソニー株式会社 | 半導体メモリ素子のキャパシタ構造及びその形成方法 |
JPH1041481A (ja) * | 1996-07-18 | 1998-02-13 | Fujitsu Ltd | 高誘電体キャパシタ及び半導体装置 |
JPH1056140A (ja) * | 1996-08-08 | 1998-02-24 | Sharp Corp | 強誘電体メモリ素子及びその製造方法 |
JPH10242408A (ja) * | 1996-12-26 | 1998-09-11 | Sony Corp | 誘電体キャパシタ、不揮発性メモリおよび半導体装置 |
KR100228355B1 (ko) * | 1996-12-30 | 1999-11-01 | 김영환 | 기억소자용 커패시터 제조방법 |
JP3867283B2 (ja) * | 1997-06-06 | 2007-01-10 | 日本テキサス・インスツルメンツ株式会社 | 強誘電体キャパシタの作製方法及び強誘電体メモリ装置の製造方法 |
JP3319994B2 (ja) * | 1997-09-29 | 2002-09-03 | シャープ株式会社 | 半導体記憶素子 |
JP3269528B2 (ja) | 1998-03-04 | 2002-03-25 | 日本電気株式会社 | 容量素子を有する半導体装置及びその製造方法 |
JPH11265984A (ja) * | 1998-03-17 | 1999-09-28 | Sony Corp | 半導体装置の製造方法 |
JP3109485B2 (ja) * | 1998-08-03 | 2000-11-13 | 日本電気株式会社 | 金属酸化物誘電体膜の気相成長方法 |
JP3159257B2 (ja) * | 1998-12-07 | 2001-04-23 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2000216359A (ja) * | 1999-01-25 | 2000-08-04 | Toshiba Corp | 半導体装置の製造方法 |
US6492222B1 (en) * | 1999-12-22 | 2002-12-10 | Texas Instruments Incorporated | Method of dry etching PZT capacitor stack to form high-density ferroelectric memory devices |
JP2002203948A (ja) * | 2001-01-05 | 2002-07-19 | Matsushita Electric Ind Co Ltd | 半導体装置 |
-
2001
- 2001-03-16 JP JP2001075485A patent/JP2002280523A/ja active Pending
-
2002
- 2002-03-15 KR KR1020020014119A patent/KR20020073443A/ko not_active Application Discontinuation
- 2002-03-15 CN CNB021074275A patent/CN1207786C/zh not_active Expired - Fee Related
- 2002-03-18 US US10/100,336 patent/US6730955B2/en not_active Expired - Fee Related
- 2002-03-18 EP EP02006148A patent/EP1241709A2/en not_active Withdrawn
-
2003
- 2003-10-21 US US10/690,316 patent/US6887752B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2002280523A (ja) | 2002-09-27 |
US20020132426A1 (en) | 2002-09-19 |
US20040079982A1 (en) | 2004-04-29 |
KR20020073443A (ko) | 2002-09-26 |
US6887752B2 (en) | 2005-05-03 |
EP1241709A2 (en) | 2002-09-18 |
US6730955B2 (en) | 2004-05-04 |
CN1375876A (zh) | 2002-10-23 |
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Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20040903 |
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