JP2007519217A - 半導体デバイスおよびその製造方法 - Google Patents

半導体デバイスおよびその製造方法 Download PDF

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Publication number
JP2007519217A
JP2007519217A JP2006517180A JP2006517180A JP2007519217A JP 2007519217 A JP2007519217 A JP 2007519217A JP 2006517180 A JP2006517180 A JP 2006517180A JP 2006517180 A JP2006517180 A JP 2006517180A JP 2007519217 A JP2007519217 A JP 2007519217A
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JP
Japan
Prior art keywords
gate
layer
semiconductor
forming
silicide
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Pending
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JP2006517180A
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English (en)
Japanese (ja)
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JP2007519217A5 (enExample
Inventor
クリボカピク ゾラン
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2007519217A publication Critical patent/JP2007519217A/ja
Publication of JP2007519217A5 publication Critical patent/JP2007519217A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006517180A 2003-06-23 2004-06-05 半導体デバイスおよびその製造方法 Pending JP2007519217A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/601,401 US6913959B2 (en) 2003-06-23 2003-06-23 Method of manufacturing a semiconductor device having a MESA structure
PCT/US2004/017727 WO2005001908A2 (en) 2003-06-23 2004-06-05 Strained semiconductor device and method of manufacture

Publications (2)

Publication Number Publication Date
JP2007519217A true JP2007519217A (ja) 2007-07-12
JP2007519217A5 JP2007519217A5 (enExample) 2009-06-04

Family

ID=33552165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006517180A Pending JP2007519217A (ja) 2003-06-23 2004-06-05 半導体デバイスおよびその製造方法

Country Status (8)

Country Link
US (1) US6913959B2 (enExample)
JP (1) JP2007519217A (enExample)
KR (1) KR101065046B1 (enExample)
CN (1) CN100521231C (enExample)
DE (1) DE112004001117B4 (enExample)
GB (1) GB2418533B (enExample)
TW (1) TWI341546B (enExample)
WO (1) WO2005001908A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016088196A1 (ja) * 2014-12-02 2016-06-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100725112B1 (ko) * 2005-04-27 2007-06-04 한국과학기술원 백―바이어스를 이용하여 ｓｏｉ 기판에 형성된 플래시 블록을 소거하기 위한 플래시 메모리 소자의 제조 방법, 그 소거 방법 및 그 구조
JP4988217B2 (ja) * 2006-02-03 2012-08-01 株式会社日立製作所 Ｍｅｍｓ構造体の製造方法
US9184263B2 (en) * 2013-12-30 2015-11-10 Globalfoundries Inc. Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
US10170332B2 (en) * 2014-06-30 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET thermal protection methods and related structures
US20170366965A1 (en) * 2016-06-21 2017-12-21 Chiun Mai Communication Systems, Inc. Communication device, communication system and method therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131659A (ja) * 1997-07-10 1999-02-02 Toshiba Corp 半導体装置の製造方法
JP2002151688A (ja) * 2000-08-28 2002-05-24 Mitsubishi Electric Corp Ｍｏｓ型半導体装置およびその製造方法

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DE69213539T2 (de) 1991-04-26 1997-02-20 Canon Kk Halbleitervorrichtung mit verbessertem isoliertem Gate-Transistor
US5397904A (en) * 1992-07-02 1995-03-14 Cornell Research Foundation, Inc. Transistor microstructure
DE4340967C1 (de) * 1993-12-01 1994-10-27 Siemens Ag Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor
JP3078720B2 (ja) * 1994-11-02 2000-08-21 三菱電機株式会社 半導体装置およびその製造方法
DE19544721C1 (de) * 1995-11-30 1997-04-30 Siemens Ag Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor
JP3472401B2 (ja) * 1996-01-17 2003-12-02 三菱電機株式会社 半導体装置の製造方法
DE19711482C2 (de) * 1997-03-19 1999-01-07 Siemens Ag Verfahren zur Herstellung eines vertikalen MOS-Transistors
US6118161A (en) 1997-04-30 2000-09-12 Texas Instruments Incorporated Self-aligned trenched-channel lateral-current-flow transistor
US6200866B1 (en) * 1998-02-23 2001-03-13 Sharp Laboratories Of America, Inc. Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET
KR100280106B1 (ko) * 1998-04-16 2001-03-02 윤종용 트렌치 격리 형성 방법
US6080612A (en) * 1998-05-20 2000-06-27 Sharp Laboratories Of America, Inc. Method of forming an ultra-thin SOI electrostatic discharge protection device
US6339002B1 (en) * 1999-02-10 2002-01-15 International Business Machines Corporation Method utilizing CMP to fabricate double gate MOSFETS with conductive sidewall contacts
US6770689B1 (en) * 1999-03-19 2004-08-03 Sakura Color Products Corp. Aqueous glittering ink
US6252284B1 (en) 1999-12-09 2001-06-26 International Business Machines Corporation Planarized silicon fin device
US6495401B1 (en) 2000-10-12 2002-12-17 Sharp Laboratories Of America, Inc. Method of forming an ultra-thin SOI MOS transistor
KR100346845B1 (ko) * 2000-12-16 2002-08-03 삼성전자 주식회사 반도체 장치의 얕은 트렌치 아이솔레이션 형성방법
EP1244142A1 (en) * 2001-03-23 2002-09-25 Universite Catholique De Louvain Fabrication method of SOI semiconductor devices
US6635923B2 (en) 2001-05-24 2003-10-21 International Business Machines Corporation Damascene double-gate MOSFET with vertical channel regions
KR100428768B1 (ko) * 2001-08-29 2004-04-30 삼성전자주식회사 트렌치 소자 분리형 반도체 장치 및 그 형성 방법
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Publication number Priority date Publication date Assignee Title
JPH1131659A (ja) * 1997-07-10 1999-02-02 Toshiba Corp 半導体装置の製造方法
JP2002151688A (ja) * 2000-08-28 2002-05-24 Mitsubishi Electric Corp Ｍｏｓ型半導体装置およびその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016088196A1 (ja) * 2014-12-02 2016-06-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JPWO2016088196A1 (ja) * 2014-12-02 2017-07-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US10014410B2 (en) 2014-12-02 2018-07-03 Renesas Electronics Corporation Method for producing semiconductor device and semiconductor device
US10121895B2 (en) 2014-12-02 2018-11-06 Renesas Electronics Corporation Method for producing semiconductor device and semiconductor device

Also Published As

Publication number Publication date
TW200507030A (en) 2005-02-16
WO2005001908A3 (en) 2005-06-02
KR20060062035A (ko) 2006-06-09
CN1809927A (zh) 2006-07-26
GB2418533B (en) 2007-03-28
US6913959B2 (en) 2005-07-05
WO2005001908A2 (en) 2005-01-06
DE112004001117B4 (de) 2011-12-01
KR101065046B1 (ko) 2011-09-19
CN100521231C (zh) 2009-07-29
GB0523869D0 (en) 2006-01-04
GB2418533A (en) 2006-03-29
US20050003593A1 (en) 2005-01-06
TWI341546B (en) 2011-05-01
DE112004001117T5 (de) 2006-06-29

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