TWI341546B - Semiconductor device and method of manufacture - Google Patents
Semiconductor device and method of manufactureInfo
- Publication number
- TWI341546B TWI341546B TW093117137A TW93117137A TWI341546B TW I341546 B TWI341546 B TW I341546B TW 093117137 A TW093117137 A TW 093117137A TW 93117137 A TW93117137 A TW 93117137A TW I341546 B TWI341546 B TW I341546B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacture
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
- H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6744—Monocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/601,401 US6913959B2 (en) | 2003-06-23 | 2003-06-23 | Method of manufacturing a semiconductor device having a MESA structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200507030A TW200507030A (en) | 2005-02-16 |
| TWI341546B true TWI341546B (en) | 2011-05-01 |
Family
ID=33552165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093117137A TWI341546B (en) | 2003-06-23 | 2004-06-15 | Semiconductor device and method of manufacture |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6913959B2 (enExample) |
| JP (1) | JP2007519217A (enExample) |
| KR (1) | KR101065046B1 (enExample) |
| CN (1) | CN100521231C (enExample) |
| DE (1) | DE112004001117B4 (enExample) |
| GB (1) | GB2418533B (enExample) |
| TW (1) | TWI341546B (enExample) |
| WO (1) | WO2005001908A2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100725112B1 (ko) * | 2005-04-27 | 2007-06-04 | 한국과학기술원 | 백―바이어스를 이용하여 ｓｏｉ 기판에 형성된 플래시 블록을 소거하기 위한 플래시 메모리 소자의 제조 방법, 그 소거 방법 및 그 구조 |
| JP4988217B2 (ja) * | 2006-02-03 | 2012-08-01 | 株式会社日立製作所 | Ｍｅｍｓ構造体の製造方法 |
| US9184263B2 (en) * | 2013-12-30 | 2015-11-10 | Globalfoundries Inc. | Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices |
| US10170332B2 (en) * | 2014-06-30 | 2019-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET thermal protection methods and related structures |
| JP6311033B2 (ja) | 2014-12-02 | 2018-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| US20170366965A1 (en) * | 2016-06-21 | 2017-12-21 | Chiun Mai Communication Systems, Inc. | Communication device, communication system and method therefor |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69213539T2 (de) | 1991-04-26 | 1997-02-20 | Canon Kk | Halbleitervorrichtung mit verbessertem isoliertem Gate-Transistor |
| US5397904A (en) * | 1992-07-02 | 1995-03-14 | Cornell Research Foundation, Inc. | Transistor microstructure |
| DE4340967C1 (de) * | 1993-12-01 | 1994-10-27 | Siemens Ag | Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor |
| JP3078720B2 (ja) * | 1994-11-02 | 2000-08-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| DE19544721C1 (de) * | 1995-11-30 | 1997-04-30 | Siemens Ag | Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor |
| JP3472401B2 (ja) * | 1996-01-17 | 2003-12-02 | 三菱電機株式会社 | 半導体装置の製造方法 |
| DE19711482C2 (de) * | 1997-03-19 | 1999-01-07 | Siemens Ag | Verfahren zur Herstellung eines vertikalen MOS-Transistors |
| US6118161A (en) | 1997-04-30 | 2000-09-12 | Texas Instruments Incorporated | Self-aligned trenched-channel lateral-current-flow transistor |
| JPH1131659A (ja) * | 1997-07-10 | 1999-02-02 | Toshiba Corp | 半導体装置の製造方法 |
| US6200866B1 (en) * | 1998-02-23 | 2001-03-13 | Sharp Laboratories Of America, Inc. | Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET |
| KR100280106B1 (ko) * | 1998-04-16 | 2001-03-02 | 윤종용 | 트렌치 격리 형성 방법 |
| US6080612A (en) * | 1998-05-20 | 2000-06-27 | Sharp Laboratories Of America, Inc. | Method of forming an ultra-thin SOI electrostatic discharge protection device |
| US6339002B1 (en) * | 1999-02-10 | 2002-01-15 | International Business Machines Corporation | Method utilizing CMP to fabricate double gate MOSFETS with conductive sidewall contacts |
| US6770689B1 (en) * | 1999-03-19 | 2004-08-03 | Sakura Color Products Corp. | Aqueous glittering ink |
| US6252284B1 (en) | 1999-12-09 | 2001-06-26 | International Business Machines Corporation | Planarized silicon fin device |
| JP2002151688A (ja) * | 2000-08-28 | 2002-05-24 | Mitsubishi Electric Corp | Ｍｏｓ型半導体装置およびその製造方法 |
| US6495401B1 (en) | 2000-10-12 | 2002-12-17 | Sharp Laboratories Of America, Inc. | Method of forming an ultra-thin SOI MOS transistor |
| KR100346845B1 (ko) * | 2000-12-16 | 2002-08-03 | 삼성전자 주식회사 | 반도체 장치의 얕은 트렌치 아이솔레이션 형성방법 |
| EP1244142A1 (en) * | 2001-03-23 | 2002-09-25 | Universite Catholique De Louvain | Fabrication method of SOI semiconductor devices |
| US6635923B2 (en) | 2001-05-24 | 2003-10-21 | International Business Machines Corporation | Damascene double-gate MOSFET with vertical channel regions |
| KR100428768B1 (ko) * | 2001-08-29 | 2004-04-30 | 삼성전자주식회사 | 트렌치 소자 분리형 반도체 장치 및 그 형성 방법 |
| US6689650B2 (en) | 2001-09-27 | 2004-02-10 | International Business Machines Corporation | Fin field effect transistor with self-aligned gate |
| US6611029B1 (en) | 2002-11-08 | 2003-08-26 | Advanced Micro Devices, Inc. | Double gate semiconductor device having separate gates |
| US6872606B2 (en) * | 2003-04-03 | 2005-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with raised segment |
-
2003
- 2003-06-23 US US10/601,401 patent/US6913959B2/en not_active Expired - Fee Related
-
2004
- 2004-06-05 DE DE112004001117T patent/DE112004001117B4/de not_active Expired - Fee Related
- 2004-06-05 CN CNB2004800176215A patent/CN100521231C/zh not_active Expired - Fee Related
- 2004-06-05 JP JP2006517180A patent/JP2007519217A/ja active Pending
- 2004-06-05 WO PCT/US2004/017727 patent/WO2005001908A2/en not_active Ceased
- 2004-06-05 GB GB0523869A patent/GB2418533B/en not_active Expired - Fee Related
- 2004-06-05 KR KR1020057024868A patent/KR101065046B1/ko not_active Expired - Fee Related
- 2004-06-15 TW TW093117137A patent/TWI341546B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200507030A (en) | 2005-02-16 |
| WO2005001908A3 (en) | 2005-06-02 |
| KR20060062035A (ko) | 2006-06-09 |
| CN1809927A (zh) | 2006-07-26 |
| GB2418533B (en) | 2007-03-28 |
| US6913959B2 (en) | 2005-07-05 |
| JP2007519217A (ja) | 2007-07-12 |
| WO2005001908A2 (en) | 2005-01-06 |
| DE112004001117B4 (de) | 2011-12-01 |
| KR101065046B1 (ko) | 2011-09-19 |
| CN100521231C (zh) | 2009-07-29 |
| GB0523869D0 (en) | 2006-01-04 |
| GB2418533A (en) | 2006-03-29 |
| US20050003593A1 (en) | 2005-01-06 |
| DE112004001117T5 (de) | 2006-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |