JP2007516355A5 - - Google Patents

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Publication number
JP2007516355A5
JP2007516355A5 JP2006539688A JP2006539688A JP2007516355A5 JP 2007516355 A5 JP2007516355 A5 JP 2007516355A5 JP 2006539688 A JP2006539688 A JP 2006539688A JP 2006539688 A JP2006539688 A JP 2006539688A JP 2007516355 A5 JP2007516355 A5 JP 2007516355A5
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Japan
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precursor
reaction chamber
flow rate
predetermined
pressure
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JP2006539688A
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Japanese (ja)
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JP4758354B2 (ja
JP2007516355A (ja
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Priority claimed from US10/716,006 external-priority patent/US7261919B2/en
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JP2006539688A 2003-11-18 2004-11-05 基体上に炭化ケイ素層を形成する方法 Expired - Fee Related JP4758354B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/716,006 2003-11-18
US10/716,006 US7261919B2 (en) 2003-11-18 2003-11-18 Silicon carbide and other films and method of deposition
PCT/US2004/037064 WO2005049884A2 (en) 2003-11-18 2004-11-05 Method for depositing silicon carbide and ceramic films

Publications (3)

Publication Number Publication Date
JP2007516355A JP2007516355A (ja) 2007-06-21
JP2007516355A5 true JP2007516355A5 (enExample) 2008-01-24
JP4758354B2 JP4758354B2 (ja) 2011-08-24

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JP2006539688A Expired - Fee Related JP4758354B2 (ja) 2003-11-18 2004-11-05 基体上に炭化ケイ素層を形成する方法

Country Status (9)

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US (3) US7261919B2 (enExample)
EP (1) EP1690287A2 (enExample)
JP (1) JP4758354B2 (enExample)
KR (1) KR20060123343A (enExample)
CN (1) CN1906735A (enExample)
AU (1) AU2004291847A1 (enExample)
CA (1) CA2546081A1 (enExample)
IL (1) IL175640A0 (enExample)
WO (1) WO2005049884A2 (enExample)

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