CN1906735A - 沉积碳化硅和陶瓷薄膜的方法 - Google Patents

沉积碳化硅和陶瓷薄膜的方法 Download PDF

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Publication number
CN1906735A
CN1906735A CNA2004800405977A CN200480040597A CN1906735A CN 1906735 A CN1906735 A CN 1906735A CN A2004800405977 A CNA2004800405977 A CN A2004800405977A CN 200480040597 A CN200480040597 A CN 200480040597A CN 1906735 A CN1906735 A CN 1906735A
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China
Prior art keywords
reative cell
silicon
base material
precursor
flow
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CNA2004800405977A
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English (en)
Chinese (zh)
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M·梅雷加尼
C·A·佐尔曼
傅小安
J·L·邓宁
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Case Western Reserve University
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Case Western Reserve University
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Publication of CN1906735A publication Critical patent/CN1906735A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CNA2004800405977A 2003-11-18 2004-11-05 沉积碳化硅和陶瓷薄膜的方法 Pending CN1906735A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/716,006 2003-11-18
US10/716,006 US7261919B2 (en) 2003-11-18 2003-11-18 Silicon carbide and other films and method of deposition

Publications (1)

Publication Number Publication Date
CN1906735A true CN1906735A (zh) 2007-01-31

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CNA2004800405977A Pending CN1906735A (zh) 2003-11-18 2004-11-05 沉积碳化硅和陶瓷薄膜的方法

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US (3) US7261919B2 (enExample)
EP (1) EP1690287A2 (enExample)
JP (1) JP4758354B2 (enExample)
KR (1) KR20060123343A (enExample)
CN (1) CN1906735A (enExample)
AU (1) AU2004291847A1 (enExample)
CA (1) CA2546081A1 (enExample)
IL (1) IL175640A0 (enExample)
WO (1) WO2005049884A2 (enExample)

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CN104681413A (zh) * 2015-02-25 2015-06-03 苏州工业园区纳米产业技术研究院有限公司 低应力多晶硅薄膜的制作方法
CN105917024A (zh) * 2014-02-17 2016-08-31 株式会社Ihi 耐热复合材料的制造方法及制造装置
WO2016141579A1 (en) * 2015-03-12 2016-09-15 Ibiden Co., Ltd. Method for manufacturing cvd-sic material

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US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
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CN104619881A (zh) * 2012-08-17 2015-05-13 株式会社Ihi 耐热复合材料的制造方法及制造装置
US9822445B2 (en) 2012-08-17 2017-11-21 Ihi Corporation Method for manufacturing heat-resistant composite material
CN105917024A (zh) * 2014-02-17 2016-08-31 株式会社Ihi 耐热复合材料的制造方法及制造装置
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CN105917024B (zh) * 2014-02-17 2020-03-06 株式会社Ihi 耐热复合材料的制造方法及制造装置
CN104681413A (zh) * 2015-02-25 2015-06-03 苏州工业园区纳米产业技术研究院有限公司 低应力多晶硅薄膜的制作方法
WO2016141579A1 (en) * 2015-03-12 2016-09-15 Ibiden Co., Ltd. Method for manufacturing cvd-sic material

Also Published As

Publication number Publication date
USRE42887E1 (en) 2011-11-01
IL175640A0 (en) 2006-09-05
WO2005049884A3 (en) 2005-11-17
JP4758354B2 (ja) 2011-08-24
EP1690287A2 (en) 2006-08-16
US7261919B2 (en) 2007-08-28
AU2004291847A1 (en) 2005-06-02
JP2007516355A (ja) 2007-06-21
WO2005049884A2 (en) 2005-06-02
US20050106320A1 (en) 2005-05-19
CA2546081A1 (en) 2005-06-02
KR20060123343A (ko) 2006-12-01
US20110001143A1 (en) 2011-01-06
US8153280B2 (en) 2012-04-10

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