KR20060123343A - 탄화규소 막 및 세라믹 막의 증착 방법 - Google Patents

탄화규소 막 및 세라믹 막의 증착 방법 Download PDF

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Publication number
KR20060123343A
KR20060123343A KR1020067011987A KR20067011987A KR20060123343A KR 20060123343 A KR20060123343 A KR 20060123343A KR 1020067011987 A KR1020067011987 A KR 1020067011987A KR 20067011987 A KR20067011987 A KR 20067011987A KR 20060123343 A KR20060123343 A KR 20060123343A
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South Korea
Prior art keywords
silicon carbide
reaction chamber
silicon
flow rate
substrate
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KR1020067011987A
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English (en)
Korean (ko)
Inventor
메란 메레가니
크리스챤 에이 조만
샤오 안 푸
제레미 엘 듀닝
Original Assignee
케이스 웨스턴 리저브 유니버시티
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Publication of KR20060123343A publication Critical patent/KR20060123343A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020067011987A 2003-11-18 2004-11-05 탄화규소 막 및 세라믹 막의 증착 방법 Withdrawn KR20060123343A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/716,006 US7261919B2 (en) 2003-11-18 2003-11-18 Silicon carbide and other films and method of deposition
US10/716,006 2003-11-18

Publications (1)

Publication Number Publication Date
KR20060123343A true KR20060123343A (ko) 2006-12-01

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KR1020067011987A Withdrawn KR20060123343A (ko) 2003-11-18 2004-11-05 탄화규소 막 및 세라믹 막의 증착 방법

Country Status (9)

Country Link
US (3) US7261919B2 (enExample)
EP (1) EP1690287A2 (enExample)
JP (1) JP4758354B2 (enExample)
KR (1) KR20060123343A (enExample)
CN (1) CN1906735A (enExample)
AU (1) AU2004291847A1 (enExample)
CA (1) CA2546081A1 (enExample)
IL (1) IL175640A0 (enExample)
WO (1) WO2005049884A2 (enExample)

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KR20130074704A (ko) * 2011-12-26 2013-07-04 엘지이노텍 주식회사 증착 장치
KR20130077488A (ko) * 2011-12-29 2013-07-09 엘지이노텍 주식회사 탄화규소 증착 방법
KR20190113619A (ko) * 2018-03-28 2019-10-08 도쿄엘렉트론가부시키가이샤 붕소계 막의 성막 방법 및 성막 장치

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US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
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US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
WO2011149918A2 (en) 2010-05-28 2011-12-01 Entegris, Inc. High surface resistivity electrostatic chuck
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
JP5817127B2 (ja) * 2011-01-21 2015-11-18 株式会社Sumco 半導体基板及びその製造方法
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
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JP5906318B2 (ja) * 2012-08-17 2016-04-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9546420B1 (en) * 2012-10-08 2017-01-17 Sandia Corporation Methods of depositing an alpha-silicon-carbide-containing film at low temperature
KR102207992B1 (ko) 2012-10-23 2021-01-26 램 리써치 코포레이션 서브-포화된 원자층 증착 및 등각막 증착
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
KR101469713B1 (ko) * 2012-12-06 2014-12-05 연세대학교 산학협력단 경사형 C/SiC 코팅막 형성 방법 및 장치
JP6249815B2 (ja) * 2014-02-17 2017-12-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
CN104681413A (zh) * 2015-02-25 2015-06-03 苏州工业园区纳米产业技术研究院有限公司 低应力多晶硅薄膜的制作方法
WO2016141579A1 (en) * 2015-03-12 2016-09-15 Ibiden Co., Ltd. Method for manufacturing cvd-sic material
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
JP6571276B2 (ja) 2015-08-31 2019-09-04 イー インク コーポレイション 描画デバイスの電子的な消去
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
CN110345031B (zh) * 2018-04-03 2020-12-11 中国科学院理化技术研究所 一种舰艇发电系统
US12040181B2 (en) 2019-05-01 2024-07-16 Lam Research Corporation Modulated atomic layer deposition
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130074704A (ko) * 2011-12-26 2013-07-04 엘지이노텍 주식회사 증착 장치
KR20130077488A (ko) * 2011-12-29 2013-07-09 엘지이노텍 주식회사 탄화규소 증착 방법
KR20190113619A (ko) * 2018-03-28 2019-10-08 도쿄엘렉트론가부시키가이샤 붕소계 막의 성막 방법 및 성막 장치

Also Published As

Publication number Publication date
JP4758354B2 (ja) 2011-08-24
USRE42887E1 (en) 2011-11-01
US7261919B2 (en) 2007-08-28
CA2546081A1 (en) 2005-06-02
JP2007516355A (ja) 2007-06-21
WO2005049884A3 (en) 2005-11-17
CN1906735A (zh) 2007-01-31
WO2005049884A2 (en) 2005-06-02
US8153280B2 (en) 2012-04-10
EP1690287A2 (en) 2006-08-16
US20110001143A1 (en) 2011-01-06
US20050106320A1 (en) 2005-05-19
AU2004291847A1 (en) 2005-06-02
IL175640A0 (en) 2006-09-05

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PA0105 International application

Patent event date: 20060616

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid