IL175640A0 - Method for depositing silicon carbide and ceramic films - Google Patents

Method for depositing silicon carbide and ceramic films

Info

Publication number
IL175640A0
IL175640A0 IL175640A IL17564006A IL175640A0 IL 175640 A0 IL175640 A0 IL 175640A0 IL 175640 A IL175640 A IL 175640A IL 17564006 A IL17564006 A IL 17564006A IL 175640 A0 IL175640 A0 IL 175640A0
Authority
IL
Israel
Prior art keywords
silicon carbide
depositing silicon
ceramic films
films
ceramic
Prior art date
Application number
IL175640A
Other languages
English (en)
Original Assignee
Univ Case Western Reserve
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Case Western Reserve filed Critical Univ Case Western Reserve
Publication of IL175640A0 publication Critical patent/IL175640A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL175640A 2003-11-18 2006-05-16 Method for depositing silicon carbide and ceramic films IL175640A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/716,006 US7261919B2 (en) 2003-11-18 2003-11-18 Silicon carbide and other films and method of deposition
PCT/US2004/037064 WO2005049884A2 (en) 2003-11-18 2004-11-05 Method for depositing silicon carbide and ceramic films

Publications (1)

Publication Number Publication Date
IL175640A0 true IL175640A0 (en) 2006-09-05

Family

ID=34574334

Family Applications (1)

Application Number Title Priority Date Filing Date
IL175640A IL175640A0 (en) 2003-11-18 2006-05-16 Method for depositing silicon carbide and ceramic films

Country Status (9)

Country Link
US (3) US7261919B2 (enExample)
EP (1) EP1690287A2 (enExample)
JP (1) JP4758354B2 (enExample)
KR (1) KR20060123343A (enExample)
CN (1) CN1906735A (enExample)
AU (1) AU2004291847A1 (enExample)
CA (1) CA2546081A1 (enExample)
IL (1) IL175640A0 (enExample)
WO (1) WO2005049884A2 (enExample)

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US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
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US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
WO2014027472A1 (ja) * 2012-08-17 2014-02-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9546420B1 (en) * 2012-10-08 2017-01-17 Sandia Corporation Methods of depositing an alpha-silicon-carbide-containing film at low temperature
KR102207992B1 (ko) 2012-10-23 2021-01-26 램 리써치 코포레이션 서브-포화된 원자층 증착 및 등각막 증착
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KR101469713B1 (ko) * 2012-12-06 2014-12-05 연세대학교 산학협력단 경사형 C/SiC 코팅막 형성 방법 및 장치
JP6249815B2 (ja) * 2014-02-17 2017-12-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
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JP2018511708A (ja) * 2015-03-12 2018-04-26 イビデン株式会社 ＣＶＤ−ＳｉＣ材の製造方法
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
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US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
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CN110345031B (zh) * 2018-04-03 2020-12-11 中国科学院理化技术研究所 一种舰艇发电系统
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Also Published As

Publication number Publication date
USRE42887E1 (en) 2011-11-01
WO2005049884A3 (en) 2005-11-17
JP4758354B2 (ja) 2011-08-24
EP1690287A2 (en) 2006-08-16
US7261919B2 (en) 2007-08-28
AU2004291847A1 (en) 2005-06-02
JP2007516355A (ja) 2007-06-21
CN1906735A (zh) 2007-01-31
WO2005049884A2 (en) 2005-06-02
US20050106320A1 (en) 2005-05-19
CA2546081A1 (en) 2005-06-02
KR20060123343A (ko) 2006-12-01
US20110001143A1 (en) 2011-01-06
US8153280B2 (en) 2012-04-10

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