JP4758354B2 - 基体上に炭化ケイ素層を形成する方法 - Google Patents

基体上に炭化ケイ素層を形成する方法 Download PDF

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JP4758354B2
JP4758354B2 JP2006539688A JP2006539688A JP4758354B2 JP 4758354 B2 JP4758354 B2 JP 4758354B2 JP 2006539688 A JP2006539688 A JP 2006539688A JP 2006539688 A JP2006539688 A JP 2006539688A JP 4758354 B2 JP4758354 B2 JP 4758354B2
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silicon carbide
residual stress
control variable
silicon
gas
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JP2007516355A5 (enExample
JP2007516355A (ja
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メーラン メーレガニー，
クリスチャン エー． ゾーマン，
シャオ−アン フー，
ジェレミー エル． ダンニング，
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ケース ウエスタン リザーブ ユニバーシティ
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2006539688A 2003-11-18 2004-11-05 基体上に炭化ケイ素層を形成する方法 Expired - Fee Related JP4758354B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/716,006 2003-11-18
US10/716,006 US7261919B2 (en) 2003-11-18 2003-11-18 Silicon carbide and other films and method of deposition
PCT/US2004/037064 WO2005049884A2 (en) 2003-11-18 2004-11-05 Method for depositing silicon carbide and ceramic films

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JP2007516355A JP2007516355A (ja) 2007-06-21
JP2007516355A5 JP2007516355A5 (enExample) 2008-01-24
JP4758354B2 true JP4758354B2 (ja) 2011-08-24

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US (3) US7261919B2 (enExample)
EP (1) EP1690287A2 (enExample)
JP (1) JP4758354B2 (enExample)
KR (1) KR20060123343A (enExample)
CN (1) CN1906735A (enExample)
AU (1) AU2004291847A1 (enExample)
CA (1) CA2546081A1 (enExample)
IL (1) IL175640A0 (enExample)
WO (1) WO2005049884A2 (enExample)

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US20110256734A1 (en) 2010-04-15 2011-10-20 Hausmann Dennis M Silicon nitride films and methods
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
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US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
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SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
SG2013083654A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Methods for depositing films on sensitive substrates
KR101469713B1 (ko) * 2012-12-06 2014-12-05 연세대학교 산학협력단 경사형 C/SiC 코팅막 형성 방법 및 장치
JP6249815B2 (ja) * 2014-02-17 2017-12-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
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JP2018511708A (ja) * 2015-03-12 2018-04-26 イビデン株式会社 ＣＶＤ−ＳｉＣ材の製造方法
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CN110345031B (zh) * 2018-04-03 2020-12-11 中国科学院理化技术研究所 一种舰艇发电系统
CN114127890B (zh) 2019-05-01 2025-10-14 朗姆研究公司 调整的原子层沉积
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JP2002190522A (ja) * 2000-07-28 2002-07-05 Applied Materials Inc 誘電体フィルムの堆積方法

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Also Published As

Publication number Publication date
USRE42887E1 (en) 2011-11-01
IL175640A0 (en) 2006-09-05
WO2005049884A3 (en) 2005-11-17
EP1690287A2 (en) 2006-08-16
US7261919B2 (en) 2007-08-28
AU2004291847A1 (en) 2005-06-02
JP2007516355A (ja) 2007-06-21
CN1906735A (zh) 2007-01-31
WO2005049884A2 (en) 2005-06-02
US20050106320A1 (en) 2005-05-19
CA2546081A1 (en) 2005-06-02
KR20060123343A (ko) 2006-12-01
US20110001143A1 (en) 2011-01-06
US8153280B2 (en) 2012-04-10

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