CA2546081A1 - Method for depositing silicon carbide and ceramic films - Google Patents
Method for depositing silicon carbide and ceramic films Download PDFInfo
- Publication number
- CA2546081A1 CA2546081A1 CA002546081A CA2546081A CA2546081A1 CA 2546081 A1 CA2546081 A1 CA 2546081A1 CA 002546081 A CA002546081 A CA 002546081A CA 2546081 A CA2546081 A CA 2546081A CA 2546081 A1 CA2546081 A1 CA 2546081A1
- Authority
- CA
- Canada
- Prior art keywords
- silicon carbide
- reaction chamber
- flow rate
- silicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000000151 deposition Methods 0.000 title claims abstract description 39
- 239000000919 ceramic Substances 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000006243 chemical reaction Methods 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 230000008021 deposition Effects 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 239000012686 silicon precursor Substances 0.000 claims description 30
- 239000002243 precursor Substances 0.000 claims description 22
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical group Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000007833 carbon precursor Substances 0.000 claims description 15
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 11
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims description 3
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005055 methyl trichlorosilane Substances 0.000 claims description 3
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 3
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 claims description 3
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 3
- GYIODRUWWNNGPI-UHFFFAOYSA-N trimethyl(trimethylsilylmethyl)silane Chemical compound C[Si](C)(C)C[Si](C)(C)C GYIODRUWWNNGPI-UHFFFAOYSA-N 0.000 claims 2
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 208000037309 Hypomyelination of early myelinating structures Diseases 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- -1 acceleration sensors Chemical compound 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 241000408659 Darpa Species 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 241000218220 Ulmaceae Species 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 210000002445 nipple Anatomy 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Micromachines (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/716,006 | 2003-11-18 | ||
| US10/716,006 US7261919B2 (en) | 2003-11-18 | 2003-11-18 | Silicon carbide and other films and method of deposition |
| PCT/US2004/037064 WO2005049884A2 (en) | 2003-11-18 | 2004-11-05 | Method for depositing silicon carbide and ceramic films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2546081A1 true CA2546081A1 (en) | 2005-06-02 |
Family
ID=34574334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002546081A Abandoned CA2546081A1 (en) | 2003-11-18 | 2004-11-05 | Method for depositing silicon carbide and ceramic films |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US7261919B2 (enExample) |
| EP (1) | EP1690287A2 (enExample) |
| JP (1) | JP4758354B2 (enExample) |
| KR (1) | KR20060123343A (enExample) |
| CN (1) | CN1906735A (enExample) |
| AU (1) | AU2004291847A1 (enExample) |
| CA (1) | CA2546081A1 (enExample) |
| IL (1) | IL175640A0 (enExample) |
| WO (1) | WO2005049884A2 (enExample) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7563633B2 (en) * | 2006-08-25 | 2009-07-21 | Robert Bosch Gmbh | Microelectromechanical systems encapsulation process |
| TWI475594B (zh) * | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| US20100083762A1 (en) * | 2008-10-02 | 2010-04-08 | Evoy Stephane | Fabrication and use of submicron wide suspended structures |
| US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
| SG10201402319QA (en) | 2009-05-15 | 2014-07-30 | Entegris Inc | Electrostatic chuck with polymer protrusions |
| DE102009040785A1 (de) * | 2009-09-09 | 2011-03-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung |
| US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US9892917B2 (en) | 2010-04-15 | 2018-02-13 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
| US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US20110256734A1 (en) | 2010-04-15 | 2011-10-20 | Hausmann Dennis M | Silicon nitride films and methods |
| US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
| US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
| US8956983B2 (en) | 2010-04-15 | 2015-02-17 | Novellus Systems, Inc. | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
| US9373500B2 (en) | 2014-02-21 | 2016-06-21 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
| US9076646B2 (en) | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
| WO2011149918A2 (en) | 2010-05-28 | 2011-12-01 | Entegris, Inc. | High surface resistivity electrostatic chuck |
| US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
| US8524612B2 (en) | 2010-09-23 | 2013-09-03 | Novellus Systems, Inc. | Plasma-activated deposition of conformal films |
| JP5817127B2 (ja) * | 2011-01-21 | 2015-11-18 | 株式会社Sumco | 半導体基板及びその製造方法 |
| US8647993B2 (en) | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
| KR102026206B1 (ko) * | 2011-12-26 | 2019-09-27 | 엘지이노텍 주식회사 | 증착 장치 |
| KR101916289B1 (ko) * | 2011-12-29 | 2019-01-24 | 엘지이노텍 주식회사 | 탄화규소 증착 방법 |
| US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
| US8728955B2 (en) | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
| WO2014027472A1 (ja) * | 2012-08-17 | 2014-02-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
| US9546420B1 (en) * | 2012-10-08 | 2017-01-17 | Sandia Corporation | Methods of depositing an alpha-silicon-carbide-containing film at low temperature |
| KR102207992B1 (ko) | 2012-10-23 | 2021-01-26 | 램 리써치 코포레이션 | 서브-포화된 원자층 증착 및 등각막 증착 |
| SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
| SG2013083654A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Methods for depositing films on sensitive substrates |
| KR101469713B1 (ko) * | 2012-12-06 | 2014-12-05 | 연세대학교 산학협력단 | 경사형 C/SiC 코팅막 형성 방법 및 장치 |
| JP6249815B2 (ja) * | 2014-02-17 | 2017-12-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
| US9214334B2 (en) | 2014-02-18 | 2015-12-15 | Lam Research Corporation | High growth rate process for conformal aluminum nitride |
| US9478438B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor |
| US9478411B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS |
| US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| CN104681413A (zh) * | 2015-02-25 | 2015-06-03 | 苏州工业园区纳米产业技术研究院有限公司 | 低应力多晶硅薄膜的制作方法 |
| JP2018511708A (ja) * | 2015-03-12 | 2018-04-26 | イビデン株式会社 | ＣＶＤ−ＳｉＣ材の製造方法 |
| US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
| US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
| US10526701B2 (en) | 2015-07-09 | 2020-01-07 | Lam Research Corporation | Multi-cycle ALD process for film uniformity and thickness profile modulation |
| EP3345047A1 (en) | 2015-08-31 | 2018-07-11 | E Ink Corporation | Electronically erasing a drawing device |
| US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
| US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
| US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| JP7049883B2 (ja) * | 2018-03-28 | 2022-04-07 | 東京エレクトロン株式会社 | ボロン系膜の成膜方法および成膜装置 |
| CN110345031B (zh) * | 2018-04-03 | 2020-12-11 | 中国科学院理化技术研究所 | 一种舰艇发电系统 |
| CN114127890B (zh) | 2019-05-01 | 2025-10-14 | 朗姆研究公司 | 调整的原子层沉积 |
| KR20220006663A (ko) | 2019-06-07 | 2022-01-17 | 램 리써치 코포레이션 | 원자 층 증착 동안 막 특성들의 인-시츄 (in-situ) 제어 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4560589A (en) * | 1982-09-22 | 1985-12-24 | Shin-Etsu Chemical Co., Ltd. | Method for providing a coating layer of silicon carbide on substrate surface |
| JPS59128281A (ja) * | 1982-12-29 | 1984-07-24 | 信越化学工業株式会社 | 炭化けい素被覆物の製造方法 |
| US4971851A (en) * | 1984-02-13 | 1990-11-20 | Hewlett-Packard Company | Silicon carbide film for X-ray masks and vacuum windows |
| JP2534525B2 (ja) * | 1987-12-19 | 1996-09-18 | 富士通株式会社 | β−炭化シリコン層の製造方法 |
| JP2823276B2 (ja) * | 1989-03-18 | 1998-11-11 | 株式会社東芝 | Ｘ線マスクの製造方法および薄膜の内部応力制御装置 |
| DE69023478T2 (de) | 1990-03-05 | 1996-06-20 | Ibm | Verfahren zum Herstellen von Siliziumkarbidschichten mit vorherbestimmter Spannungskraft. |
| JP2556621B2 (ja) * | 1990-12-11 | 1996-11-20 | ホーヤ株式会社 | 炭化ケイ素膜の成膜方法 |
| JPH051380A (ja) * | 1991-06-24 | 1993-01-08 | Hoya Corp | 炭化ケイ素の成膜方法 |
| JPH05335216A (ja) * | 1992-05-29 | 1993-12-17 | Fujitsu Ltd | Ｘ線マスク及びその製造方法 |
| US5296258A (en) * | 1992-09-30 | 1994-03-22 | Northern Telecom Limited | Method of forming silicon carbide |
| US5415126A (en) * | 1993-08-16 | 1995-05-16 | Dow Corning Corporation | Method of forming crystalline silicon carbide coatings at low temperatures |
| JPH08507575A (ja) * | 1993-08-17 | 1996-08-13 | アクツィオネルノエ オブシュストボ “ルッスコエ オブシュストボ プリクラドノイ エレクトロニキ” | 炭化ケイ素層の製造方法とその物品 |
| US5480695A (en) | 1994-08-10 | 1996-01-02 | Tenhover; Michael A. | Ceramic substrates and magnetic data storage components prepared therefrom |
| US5800878A (en) * | 1996-10-24 | 1998-09-01 | Applied Materials, Inc. | Reducing hydrogen concentration in pecvd amorphous silicon carbide films |
| JP3607454B2 (ja) * | 1997-03-31 | 2005-01-05 | Ｈｏｙａ株式会社 | Ｘ線マスク用ｘ線透過膜、ｘ線マスクブランク及びｘ線マスク並びにこれらの製造方法並びに炭化珪素膜の研磨方法 |
| US6103590A (en) * | 1997-12-12 | 2000-08-15 | Texas Instruments Incorporated | SiC patterning of porous silicon |
| US6189766B1 (en) | 1998-07-10 | 2001-02-20 | Northrop Grumman Corporation | Zero stress bonding of silicon carbide to diamond |
| US7018947B2 (en) * | 2000-02-24 | 2006-03-28 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
| US6764958B1 (en) * | 2000-07-28 | 2004-07-20 | Applied Materials Inc. | Method of depositing dielectric films |
-
2003
- 2003-11-18 US US10/716,006 patent/US7261919B2/en not_active Ceased
-
2004
- 2004-11-05 CN CNA2004800405977A patent/CN1906735A/zh active Pending
- 2004-11-05 KR KR1020067011987A patent/KR20060123343A/ko not_active Withdrawn
- 2004-11-05 CA CA002546081A patent/CA2546081A1/en not_active Abandoned
- 2004-11-05 EP EP04810481A patent/EP1690287A2/en not_active Withdrawn
- 2004-11-05 AU AU2004291847A patent/AU2004291847A1/en not_active Abandoned
- 2004-11-05 WO PCT/US2004/037064 patent/WO2005049884A2/en not_active Ceased
- 2004-11-05 JP JP2006539688A patent/JP4758354B2/ja not_active Expired - Fee Related
-
2006
- 2006-05-16 IL IL175640A patent/IL175640A0/en unknown
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2007
- 2007-04-18 US US11/736,964 patent/US8153280B2/en not_active Expired - Fee Related
-
2009
- 2009-08-26 US US12/548,363 patent/USRE42887E1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| USRE42887E1 (en) | 2011-11-01 |
| IL175640A0 (en) | 2006-09-05 |
| WO2005049884A3 (en) | 2005-11-17 |
| JP4758354B2 (ja) | 2011-08-24 |
| EP1690287A2 (en) | 2006-08-16 |
| US7261919B2 (en) | 2007-08-28 |
| AU2004291847A1 (en) | 2005-06-02 |
| JP2007516355A (ja) | 2007-06-21 |
| CN1906735A (zh) | 2007-01-31 |
| WO2005049884A2 (en) | 2005-06-02 |
| US20050106320A1 (en) | 2005-05-19 |
| KR20060123343A (ko) | 2006-12-01 |
| US20110001143A1 (en) | 2011-01-06 |
| US8153280B2 (en) | 2012-04-10 |
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