JP2018511708A - CVD−SiC材の製造方法 - Google Patents
CVD−SiC材の製造方法 Download PDFInfo
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- JP2018511708A JP2018511708A JP2017566177A JP2017566177A JP2018511708A JP 2018511708 A JP2018511708 A JP 2018511708A JP 2017566177 A JP2017566177 A JP 2017566177A JP 2017566177 A JP2017566177 A JP 2017566177A JP 2018511708 A JP2018511708 A JP 2018511708A
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- cvd
- sic
- sic material
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Abstract
Description
SiCl4は、ハロゲン化シランの中でもハロゲンの量が多いのでより安定であり、基材に到達するまでの熱分解を抑制することができると考えられる。また、Siと結合するハロゲン元素は結合エネルギーの大きいClを用いているので、Hと比較しより安定にすることができ、基材に到達するまでの熱分解を抑制することができると考えられる。さらに、CVD反応で生成するClの化合物は主にHClであり、HFのように反応性が強くないので、これに関する副反応を抑制でき、良好なCVD−SiC材を形成することができると考えられる。
C2H2は、CVD−SiC材用の炭素源の中でも、結合の切れにくい炭素源であるため、純度98%(体積%)以上である高純度のC2H2を使用することによって、より結晶方位の揃ったCVD−SiC材が得られると考えられる。
本発明のCVD−SiC材の製造方法は、原料ガスを選択することにより1600K以下の製膜温度であっても製膜速度を速くすることができるので、高温型の(220)面の結晶配向の少ない多結晶のCVD−SiC材を効率よく得ることができると考えられる。
本発明のCVD法は、1450〜1600Kで反応が行われると、高温型の(220)面の結晶配向のより少ない多結晶のCVD−SiC材を効率よく得ることができると考えられる。
雰囲気:空気
測定範囲:10°≦2θ≦90°
ステップ:0.02
積算時間:0.15s
41.38°:SiC(200)面
59.97°:SiC(220)面
71.78°:SiC(311)面
75.49°:SiC(222)面
44.0°:Graphite(101)面
53.8°:Graphite(004)面
77.6°:Graphite(110)面
<CVD炉>
CVD炉の内容積 φ650mm内径×615mmh
ホットゾーンの内容積φ110mm内径×100mmh
反応時間:2hr
<CVD反応>
基材として黒鉛を用い、炭素源、珪素源(水素キャリアガスによるバブリングによる)、水素キャリアガス(別系統)はそれぞれのノズルで炉内に導入し、炉内ノズル先端の混合構造で混合してから、基材上部(基材面+150mm)から供給している。なお、使用した原料ガスなどの純度グレードは下記のとおりである。
CH4:99.9%
C3H8:99.9%
C2H2:98.0%
SiCl4:99.50%
LPG:混合物
Claims (5)
- C2H2からなる炭素源とハロゲン化シランからなる珪素源とを原料ガスとして使用し、CVD法により多結晶SiCを形成するCVD−SiC材の製造方法。
- 請求項1に記載のCVD−SiC材の製造方法であって、
前記珪素源はSiCl4であるCVD−SiC材の製造方法。 - 請求項1または請求項2に記載のCVD−SiC材の製造方法であって、前記炭素源は純度98%以上のC2H2であるCVD−SiC材の製造方法。
- 請求項1に記載のCVD−SiC材の製造方法であって、
前記CVD法では1600K以下での反応において、(111)面方向に配向するCVD−SiC材の製造方法。 - 請求項4に記載のCVD−SiC材の製造方法であって、
前記CVD法では1450〜1600Kでの反応が行われるCVD−SiC材の製造方法。
Applications Claiming Priority (1)
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PCT/CN2015/074065 WO2016141579A1 (en) | 2015-03-12 | 2015-03-12 | Method for manufacturing cvd-sic material |
Publications (1)
Publication Number | Publication Date |
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JP2018511708A true JP2018511708A (ja) | 2018-04-26 |
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JP2017566177A Pending JP2018511708A (ja) | 2015-03-12 | 2015-03-12 | CVD−SiC材の製造方法 |
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JP (1) | JP2018511708A (ja) |
WO (1) | WO2016141579A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114804113A (zh) * | 2022-05-26 | 2022-07-29 | 哈尔滨晶彩材料科技有限公司 | 杂化官能度硅烷无引发悬浮聚合制备高纯SiC多晶源粉的方法 |
Families Citing this family (1)
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EP4001475A1 (en) | 2020-11-19 | 2022-05-25 | Zadient Technologies SAS | Improved furnace apparatus for crystal production |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02262324A (ja) * | 1989-03-31 | 1990-10-25 | Hoya Corp | X線透過膜およびその製造方法 |
JPH07328937A (ja) * | 1994-06-09 | 1995-12-19 | Nippon Telegr & Teleph Corp <Ntt> | パッドコンディショナー及びその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH051380A (ja) * | 1991-06-24 | 1993-01-08 | Hoya Corp | 炭化ケイ素の成膜方法 |
JPH07118854A (ja) * | 1993-10-22 | 1995-05-09 | Hoya Corp | 炭化ケイ素膜の形成方法 |
US7261919B2 (en) * | 2003-11-18 | 2007-08-28 | Flx Micro, Inc. | Silicon carbide and other films and method of deposition |
SE536605C2 (sv) * | 2012-01-30 | 2014-03-25 | Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi |
-
2015
- 2015-03-12 JP JP2017566177A patent/JP2018511708A/ja active Pending
- 2015-03-12 WO PCT/CN2015/074065 patent/WO2016141579A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02262324A (ja) * | 1989-03-31 | 1990-10-25 | Hoya Corp | X線透過膜およびその製造方法 |
JPH07328937A (ja) * | 1994-06-09 | 1995-12-19 | Nippon Telegr & Teleph Corp <Ntt> | パッドコンディショナー及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114804113A (zh) * | 2022-05-26 | 2022-07-29 | 哈尔滨晶彩材料科技有限公司 | 杂化官能度硅烷无引发悬浮聚合制备高纯SiC多晶源粉的方法 |
CN114804113B (zh) * | 2022-05-26 | 2024-02-02 | 哈尔滨晶彩材料科技有限公司 | 杂化官能度硅烷无引发悬浮聚合制备高纯SiC多晶源粉的方法 |
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