JP2020502809A5 - - Google Patents
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- Publication number
- JP2020502809A5 JP2020502809A5 JP2019532948A JP2019532948A JP2020502809A5 JP 2020502809 A5 JP2020502809 A5 JP 2020502809A5 JP 2019532948 A JP2019532948 A JP 2019532948A JP 2019532948 A JP2019532948 A JP 2019532948A JP 2020502809 A5 JP2020502809 A5 JP 2020502809A5
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- precursor
- silicon
- encapsulation layer
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 18
- 238000000034 method Methods 0.000 claims 13
- 239000002243 precursor Substances 0.000 claims 10
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 238000005538 encapsulation Methods 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 3
- 229910052796 boron Inorganic materials 0.000 claims 3
- 229910003697 SiBN Inorganic materials 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 238000005019 vapor deposition process Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662437986P | 2016-12-22 | 2016-12-22 | |
| US62/437,986 | 2016-12-22 | ||
| PCT/US2017/061976 WO2018118288A1 (en) | 2016-12-22 | 2017-11-16 | Sibn film for conformal hermetic dielectric encapsulation without direct rf exposure to underlying structure material |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020502809A JP2020502809A (ja) | 2020-01-23 |
| JP2020502809A5 true JP2020502809A5 (enExample) | 2021-01-07 |
| JP7191023B2 JP7191023B2 (ja) | 2022-12-16 |
Family
ID=62627181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019532948A Active JP7191023B2 (ja) | 2016-12-22 | 2017-11-16 | 下位構造材料に直接ｒｆ曝露しない共形の気密性誘電体封入のためのｓｉｂｎ膜 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11011371B2 (enExample) |
| JP (1) | JP7191023B2 (enExample) |
| KR (1) | KR102551237B1 (enExample) |
| CN (1) | CN110168698B (enExample) |
| WO (1) | WO2018118288A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7518835B2 (ja) * | 2019-01-02 | 2024-07-18 | アプライド マテリアルズ インコーポレイテッド | 漏れ電流が少ない、ケイ素ホウ素を含む膜の形成方法 |
| US11618949B2 (en) * | 2019-11-08 | 2023-04-04 | Applied Materials, Inc. | Methods to reduce material surface roughness |
| US11515145B2 (en) * | 2020-09-11 | 2022-11-29 | Applied Materials, Inc. | Deposition of silicon boron nitride films |
| US11676813B2 (en) * | 2020-09-18 | 2023-06-13 | Applied Materials, Inc. | Doping semiconductor films |
| US12033848B2 (en) * | 2021-06-18 | 2024-07-09 | Applied Materials, Inc. | Processes for depositing sib films |
| US20240363337A1 (en) * | 2023-04-26 | 2024-10-31 | Applied Materials, Inc. | Methods for forming low-k dielectric materials |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5712193A (en) * | 1994-12-30 | 1998-01-27 | Lucent Technologies, Inc. | Method of treating metal nitride films to reduce silicon migration therein |
| US6002202A (en) * | 1996-07-19 | 1999-12-14 | The Regents Of The University Of California | Rigid thin windows for vacuum applications |
| US5994209A (en) * | 1996-11-13 | 1999-11-30 | Applied Materials, Inc. | Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films |
| US6638876B2 (en) * | 2000-09-19 | 2003-10-28 | Mattson Technology, Inc. | Method of forming dielectric films |
| CN1244145C (zh) * | 2001-11-21 | 2006-03-01 | 哈娄利公司 | 双monos单元制造方法及集成电路组件 |
| KR100449028B1 (ko) * | 2002-03-05 | 2004-09-16 | 삼성전자주식회사 | 원자층 증착법을 이용한 박막 형성방법 |
| US7611943B2 (en) * | 2004-10-20 | 2009-11-03 | Texas Instruments Incorporated | Transistors, integrated circuits, systems, and processes of manufacture with improved work function modulation |
| JP4506677B2 (ja) * | 2005-03-11 | 2010-07-21 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
| US7294543B2 (en) * | 2006-03-22 | 2007-11-13 | International Business Machines Corporation | DRAM (Dynamic Random Access Memory) cells |
| JP2008166594A (ja) | 2006-12-28 | 2008-07-17 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US8084105B2 (en) * | 2007-05-23 | 2011-12-27 | Applied Materials, Inc. | Method of depositing boron nitride and boron nitride-derived materials |
| CN101743631B (zh) * | 2007-07-13 | 2012-12-26 | 应用材料公司 | 硼衍生的材料的沉积方法 |
| US7879683B2 (en) * | 2007-10-09 | 2011-02-01 | Applied Materials, Inc. | Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay |
| WO2009079657A2 (en) * | 2007-12-18 | 2009-06-25 | Byung Chun Yang | High yield and high throughput method for the manufacture of integrated circuit devices of improved integrity, performance and reliability |
| JP2010251654A (ja) | 2009-04-20 | 2010-11-04 | Elpida Memory Inc | 成膜方法および半導体装置の製造方法 |
| JP2011023576A (ja) * | 2009-07-16 | 2011-02-03 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
| US8426085B2 (en) | 2010-12-02 | 2013-04-23 | Intermolecular, Inc. | Method and apparatus for EUV mask having diffusion barrier |
| US9252019B2 (en) * | 2011-08-31 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method for forming the same |
| US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
| US20140187045A1 (en) * | 2013-01-02 | 2014-07-03 | Applied Materials, Inc. | Silicon nitride gapfill implementing high density plasma |
| JP6267080B2 (ja) * | 2013-10-07 | 2018-01-24 | 東京エレクトロン株式会社 | シリコン窒化物膜の成膜方法および成膜装置 |
| US10023958B2 (en) | 2013-11-22 | 2018-07-17 | Applied Materials, Inc. | Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors |
| US9685325B2 (en) * | 2014-07-19 | 2017-06-20 | Applied Materials, Inc. | Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD |
| US9355837B2 (en) * | 2014-09-25 | 2016-05-31 | Micron Technology, Inc. | Methods of forming and using materials containing silicon and nitrogen |
| WO2016081514A1 (en) * | 2014-11-17 | 2016-05-26 | Sage Electrochromics, Inc. | Multiple barrier layer encapsulation stack |
| US9589790B2 (en) | 2014-11-24 | 2017-03-07 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
| US10763103B2 (en) | 2015-03-31 | 2020-09-01 | Versum Materials Us, Llc | Boron-containing compounds, compositions, and methods for the deposition of a boron containing films |
| US20170323785A1 (en) * | 2016-05-06 | 2017-11-09 | Lam Research Corporation | Method to deposit conformal and low wet etch rate encapsulation layer using pecvd |
-
2017
- 2017-11-16 KR KR1020197020710A patent/KR102551237B1/ko active Active
- 2017-11-16 WO PCT/US2017/061976 patent/WO2018118288A1/en not_active Ceased
- 2017-11-16 JP JP2019532948A patent/JP7191023B2/ja active Active
- 2017-11-16 CN CN201780079463.3A patent/CN110168698B/zh active Active
- 2017-11-16 US US16/462,513 patent/US11011371B2/en active Active
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